Prosecution Insights
Last updated: August 18, 2026
Application No. 18/083,212

LIGHT EMITTING DEVICE AND LIGHT EMITTING MODULE

Final Rejection §103
Filed
Dec 16, 2022
Priority
Dec 19, 2021 — provisional 63/291,448 +2 more
Examiner
KHALIFA, MOATAZ
Art Unit
2817
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Seoul Viosys Co., Ltd.
OA Round
4 (Final)
92%
Grant Probability
Favorable
5-6
OA Rounds
0m
Est. Remaining
92%
With Interview

Examiner Intelligence

Grants 92% — above average
92%
Career Allowance Rate
57 granted / 62 resolved
+23.9% vs TC avg
Minimal +0% lift
Without
With
+0.1%
Interview Lift
resolved cases with interview
Typical timeline
3y 5m
Avg Prosecution
41 currently pending
Career history
110
Total Applications
across all art units

Statute-Specific Performance

§103
75.1%
+35.1% vs TC avg
§102
18.5%
-21.5% vs TC avg
§112
4.4%
-35.6% vs TC avg
Black line = Tech Center average estimate • Based on career data from 62 resolved cases

Office Action

§103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Information Disclosure Statement The information disclosure statement (IDS) submitted on 04/06/2026 was filed after the mailing date of the application on 12/16/2022. The submission is in compliance with the provisions of 37 CFR 1.97. Accordingly, the information disclosure statement is being considered by the examiner. Response to Arguments Applicant's arguments filed 05/19/2026 regarding the rejection of claims 1-5, 8, 10, 21-25 and 27 under 35 U.S.C. 103, see pages 6-9 of Remarks, have been fully considered but they are not persuasive. Regarding claim 1; the examiner respectfully disagrees with the argument that using Iguchi et al, US 20220069186 A1 (Iguchi) in view of Leng, US 20220165993 A1 (Leng) fails to establish a prima facie case for the rejections detailed in the Non-Final Rejection of 02/19/2026, see the Applicant’s argument on pages 6-9 of the Remarks, for the following reasons: Claim 1 of the instant application recites the limitation: “… wherein the first molding layer is no higher than a portion of the first electrode covering the first surface of each of the plurality of light emitting devices….”. By examining Figure (3) of Leng, an annotated copy of which is provided below to illustrate the examiner’s point, one can see that the first molding layer 170 has portions that are indeed not higher than several of the portions of the first electrode 123 covering the first surface of each of the light emitting devices 120. Thus, it is within the broadest reasonable interpretation of the language used to recite the limitations of the claim, that this limitation is obvious in light of using Iguchi in view of Leng. PNG media_image1.png 602 1088 media_image1.png Greyscale Regarding claim 21; the Applicant presents arguments similar to the arguments presented regarding the rejection of claim 1. Thus, the reasoning presented by the examiner, detailed above, should be applicable to the arguments against the rejection of claim 21. Given the arguments detailed above, the examiner sees it fit to maintain the rejections provided in the Non-Final Rejection of 02/19/2026. These rejections will be detailed again below. Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Rejection Note: Italicized claim limitations indicate limitations that are not explicitly disclosed in the primary reference, but disclosed in the secondary reference(s). Claims 1-5, 8, 21-25 and 27 are rejected under 35 U.S.C. 103 as being unpatentable over Iguchi et al, US 20220069186 A1 (Iguchi) in view of Leng, US 20220165993 A1 (Leng). Regarding claim 1; Iguchi teaches a light emitting module (Iguchi: Fig (8): 200e) comprising: a circuit board (Fig (1A): 50); a plurality of light emitting devices (Fig (8): 100B, 100R, 100G) disposed on the circuit board (Fig (1A): 50); a first molding layer (Fig (8): 24+15c) surrounding side surfaces of the plurality of light emitting devices (100B, 100R, 100G); a second molding layer disposed on the first molding layer; and a first electrode (30c); wherein each of the plurality of light emitting devices (100B, 100R, 100G) comprises a first semiconductor layer (13), a second semiconductor layer (11), and an active layer (12) disposed between the first semiconductor layer (13) and the second semiconductor layer (11), wherein a first surface of the first semiconductor layer (13) corresponds to a light exit surface of each of the plurality of light emitting devices (100B, 100R, 100G), wherein the first electrode (30c) covers the first surface of each of the plurality of light emitting devices (100B, 100R, 100G) and a plurality of openings of the first molding layer (24+15c), wherein the first molding layer is no higher than a portion of the first electrode covering the first surface of each of the plurality of light emitting devices, and wherein the second molding layer covers the first electrode. Iguchi does not teach a second molding layer disposed on the first molding layer, wherein the first molding layer is no higher than a portion of the first electrode covering the first surface of each of the plurality of light emitting devices, and wherein the second molding layer covers the first electrode. However, Leng teaches a second molding layer (160) disposed on the first molding layer (170), wherein the first molding layer (170) is no higher than a portion of the first electrode (123) covering the first surface of each of the plurality of light emitting devices (120), and wherein the second molding layer (160) covers the first electrode (123). Iguchi and Leng are considered analogous art. Thus, it would have been obvious, prior to the effective filing date of the instant application, to a person having ordinary skill in the art, to modify Iguchi by incorporating a second molding layer such as disclosed in Leng to improve the protection of the device against external elements leading to a more reliable device. Regarding claim 2; Iguchi in view of Leng discloses all the limitations of the light emitting module according to claim 1. Further, Iguchi teaches wherein each of the light emitting devices (Iguchi: Fig (8): 100B, 100R, 100G) comprises a second electrode (23N) electrically connected to the second semiconductor layer (11), the first electrode (30c) and the second electrode (23N) being disposed to face the circuit board (Fig (1A): 50). Regarding claim 3; Iguchi in view of Leng discloses all the limitations of the light emitting module according to claim 2. Further, Iguchi teaches wherein the first electrode (Iguchi: Fig (8): 30C) and the second electrode (23N) of each of the plurality of light emitting devices (100B, 100R, 100G) are electrically connected to the circuit board (Fig (1A): 50). Regarding claim 4; Iguchi in view of Leng discloses all the limitations of the light emitting module according to claim 2. Further, Iguchi teaches wherein the first electrode (Iguchi: Fig (8): 30c) overlaps with an interface between the side surfaces of the plurality of light emitting devices (100B, 100R, 100G) and the first molding layer (24+15c). Regarding claim 5; Iguchi in view of Leng discloses all the limitations of the light emitting module according to claim 1. Further, Iguchi teaches wherein each of the plurality of light emitting devices (Iguchi: Fig (8): 100B, 100R, 100G) comprises a second electrode (23N) electrically connected to the second semiconductor layer (11), the second electrode (23N) being disposed to face the circuit board (Fig (1A): 50). Regarding claim 8; Iguchi in view of Leng discloses all the limitations of the light emitting module according to claim 1. Further, Iguchi teaches wherein the first molding layer (Iguchi: Fig (8): 24+15c) has an upper surface, having a periphery (upper surface of 15c) flush with the first surface of the first semiconductor (13). Regarding claim 21; Iguchi teaches a light emitting module (Iguchi: Fig (8): 200e) comprising: a circuit board (Fig (1A): 50); a plurality of light emitting devices (Fig (8): 100B, 100R, 100G) disposed on the circuit board (Fig (1A): 50); a first molding layer (Fig (8): 24+15c) surrounding side surfaces of the plurality of light emitting devices (100B, 100R, 100G); a second molding layer disposed on the first molding layer; and a first electrode (30c); wherein each of the plurality of light emitting devices (100B, 100R, 100G) comprises a first semiconductor layer (13), a second semiconductor layer (11), and an active layer (12) disposed between the first semiconductor layer (13) and the second semiconductor layer (11), wherein a first surface (top surface) of the first semiconductor layer (13) corresponds to a light exit surface of each of the plurality of light emitting devices (100B, 100R, 100G), wherein the first electrode (30c) contacts the first surface of each of the plurality of light emitting devices (100B, 100R, 100G) and a plurality of openings of the first molding layer (24+15c), wherein the first molding layer is no higher than a portion of the first electrode contacting the first surface of each of the plurality of light emitting devices, and wherein the second molding layer covers the first electrode. Iguchi does not teach a second molding layer disposed on the first molding layer, wherein the first molding layer is no higher than a portion of the first electrode contacting the first surface of each of the plurality of light emitting devices, and wherein the second molding layer covers the first electrode. However, Leng teaches a second molding layer (160) disposed on the first molding layer (170), wherein the first molding layer (170) is no higher than a portion of the first electrode (123) covering the first surface of each of the plurality of light emitting devices (120), and wherein the second molding layer (160) covers the first electrode (123). Iguchi and Leng are considered analogous art. Thus, it would have been obvious, prior to the effective filing date of the instant application, to a person having ordinary skill in the art, to modify Iguchi by incorporating a second molding layer such as disclosed in Leng to improve the protection of the device against external elements leading to a more reliable device. Regarding claim 22; Iguchi in view of Leng discloses all the limitations of the light emitting module according to claim 21. Further, Iguchi teaches wherein each of the plurality of light emitting devices (Iguchi: Fig (8): 100B, 100R, 100G) comprises a second electrode (23N) electrically connected to the second semiconductor layer (11), the first electrode (30c) and the second electrode (23N) being disposed to face the circuit board (Fig (1A): 50). Regarding claim 23; Iguchi in view of Leng discloses all the limitations of the light emitting module according to claim 22. Further, Iguchi teaches wherein the first electrode (Iguchi: Fig (8): 30c) and the second electrode (23N) of the light emitting device (100B, 100R, 100G) are electrically connected to the circuit board (Fig (1A): 50). Regarding case 24; Iguchi in view of Leng discloses all the limitations of the light emitting module according to claim 21. Further, Iguchi teaches wherein the first electrode (Iguchi: Fig (8): 30c) overlaps with an interface between the side surfaces of the plurality of light emitting devices (100B, 100R, 100G) and the first molding layer (24+15c). Regarding claim 25; Iguchi in view of Leng discloses all the limitations of the light emitting module according to claim 21. Further, Iguchi teaches wherein each of the plurality of light emitting devices (Iguchi: Fig (8): 100B, 100R, 100G) comprises a second electrode (23N) electrically connected to the second semiconductor layer (11), the second electrode (23N) being disposed to face the circuit board (Fig (1A): 50). Regarding claim 27; Iguchi in view of Leng discloses all the limitations of the light emitting module according to claim 21. Further, Iguchi teaches wherein the upper surface of the first molding layer (Iguchi: Fig (8): 24+15c) includes a periphery (upper surface of 15c) flush with the first surface of the first semiconductor layer (13). Claims 10 and 28 are rejected under 35 U.S.C. 103 as being unpatentable over Iguchi et al, US 20220069186 A1 (Iguchi) in view of Leng, US 20220165993 A1 (Leng) in further view of Choe, US 20210074770 A1 (Choe). Regarding claim 10; Iguchi in view of Leng discloses all the limitations of the light emitting module according to claim 1. However, Iguchi in view of Leng does not teach wherein the second molding layer includes a plurality of openings corresponding to the plurality of openings of the first molding layer. Choe teaches wherein the second molding layer (Choe: Fig (14): MB3) includes a plurality of openings corresponding to the plurality of openings of the first molding layer (119). Iguchi in view of Leng and Choe are considered analogous art. Thus, it would have been obvious, prior to the effective filing date of the instant application to modify Iguchi in view of Leng by using the openings in the second molding layer that correspond to the openings in the first molding layer as disclosed in Choe to improve the resolution of the device. Regarding claim 28; Iguchi in view of Leng discloses all the limitations of the light emitting module according to claim 21. However, Iguchi in view of Leng does not teach wherein the second molding layer includes a plurality of openings corresponding to the plurality of openings of the first molding layer. Choe teaches wherein the second molding layer (Choe: Fig (14): MB3) includes a plurality of openings corresponding to the plurality of openings of the first molding layer (119). Iguchi in view of Leng and Choe are considered analogous art. Thus, it would have been obvious, prior to the effective filing date of the instant application to modify Iguchi in view of Leng by using the openings in the second molding layer that correspond to the openings in the first molding layer as disclosed in Choe to improve the resolution of the device. Conclusion THIS ACTION IS MADE FINAL. Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to Moataz Khalifa whose telephone number is (703)756-1770. The examiner can normally be reached Monday - Friday (8:30 am - 5:00). Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Kretelia Graham can be reached at (571) 272-5055. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /M.K./Examiner, Art Unit 2817 /Kretelia Graham/Supervisory Patent Examiner, Art Unit 2817
Read full office action

Prosecution Timeline

Show 5 earlier events
Jan 19, 2026
Request for Continued Examination
Jan 27, 2026
Response after Non-Final Action
Feb 19, 2026
Non-Final Rejection mailed — §103
May 08, 2026
Interview Requested
May 19, 2026
Response Filed
Jul 02, 2026
Final Rejection mailed — §103
Jul 27, 2026
Interview Requested
Aug 06, 2026
Interview Requested

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12696754
INTERCONNECT STRUCTURE HAVING DIFFERENT DIMENSIONS FOR CONNECTED CIRCUIT BLOCKS IN INTEGRATED CIRCUIT
4y 1m to grant Granted Jul 28, 2026
Patent 12660435
DISPLAY SUBSTRATE AND DISPLAY DEVICE
3y 11m to grant Granted Jun 16, 2026
Patent 12652969
CONFINED PHASE-CHANGE MEMORY CELL WITH SELF-ALIGNED ELECTRODE AND REDUCED THERMAL LOSS
4y 3m to grant Granted Jun 09, 2026
Patent 12635301
DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
3y 11m to grant Granted May 19, 2026
Patent 12622099
SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE INCLUDING THE SAME
4y 6m to grant Granted May 05, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

Strategy Recommendation AI-generated — please review before filing

Get a prosecution strategy drawn from examiner precedents, rejection analysis, and claim mapping.
Typically takes 5-10 seconds — AI-generated, attorney review required before filing

Prosecution Projections

5-6
Expected OA Rounds
92%
Grant Probability
92%
With Interview (+0.1%)
3y 5m (~0m remaining)
Median Time to Grant
High
PTA Risk
Based on 62 resolved cases by this examiner. Grant probability derived from career allowance rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month