Prosecution Insights
Last updated: May 22, 2026
Application No. 18/086,265

LOW DIE HEIGHT GLASS SUBSTRATE DEVICE AND METHOD

Non-Final OA
Filed
Dec 21, 2022
Examiner
SPALLA, DAVID C
Art Unit
2893
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Intel Corporation
OA Round
1 (Non-Final)
84%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
89%
With Interview

Examiner Intelligence

Grants 84% — above average
84%
Career Allowance Rate
710 granted / 843 resolved
+16.2% vs TC avg
Minimal +5% lift
Without
With
+4.8%
Interview Lift
resolved cases with interview
Typical timeline
2y 3m
Avg Prosecution
14 currently pending
Career history
857
Total Applications
across all art units

Statute-Specific Performance

§103
47.9%
+7.9% vs TC avg
§102
34.3%
-5.7% vs TC avg
§112
8.5%
-31.5% vs TC avg
Black line = Tech Center average estimate • Based on career data from 843 resolved cases

Prosecution Timeline

Dec 21, 2022
Application Filed
Jun 28, 2023
Response after Non-Final Action

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12628384
ENHANCED-SHAPED EXTENSION REGION(S) FOR GATE-ALL-AROUND (GAA) FIELD EFFECT TRANSISTOR (FET) DEVICE, AND RELATED FABRICATION METHODS
3y 0m to grant Granted May 12, 2026
Patent 12628417
THREE-DIMENSIONAL (3D) FIELD EFFECT TRANSISTORS (FETS) WITH GATE CUTS TO ENHANCE CARRIER MOBILITY AND RELATED FABRICATION METHODS
2y 11m to grant Granted May 12, 2026
Patent 12615802
SQUARE ETCH PROFILES IN HETEROGENOUS MATERIALS OF INTEGRATED CIRCUIT DEVICES
3y 7m to grant Granted Apr 28, 2026
Patent 12615817
STACKED FET WITH LOW PARASITIC-CAPACITANCE GATE
2y 10m to grant Granted Apr 28, 2026
Patent 12604508
SEMICONDUCTOR DEVICE HAVING SIDE SPACER PATTERNS
2y 10m to grant Granted Apr 14, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
84%
Grant Probability
89%
With Interview (+4.8%)
2y 3m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 843 resolved cases by this examiner. Grant probability derived from career allowance rate.

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