Prosecution Insights
Last updated: October 02, 2026

Examiner: SPALLA, DAVID C

Tech Center 2800 • Art Units: 2811 2815 2818 2821 2893 2896

This examiner grants 84% of resolved cases

Analysis

David C Spalla maintains a high volume of 853 resolved cases within Tech Center 2800 and Art Unit 2811. His allowance rate of 84.4% is notably high, suggesting a relatively smooth path to grant for many applications. This efficiency is further evidenced by a median days to allowance of 844, which indicates a faster resolution timeline compared to many other examiners. The large sample size of 853 cases provides a high degree of statistical reliability for these metrics.

The interview lift of 4.8% provides a modest but positive impact on prosecution outcomes. When added to the base allowance rate of 84.4%, an interview may slightly improve the chances of success, though the high initial rate suggests that many cases proceed to allowance without such intervention. Practitioners can expect a predictable experience in Art Unit 2811, characterized by the 844 days median pendency and a high probability of grant. The 4.8% lift remains a useful tool for complex cases, even if the general trend is already favorable. The 853 resolved cases confirm that this examiner consistently maintains high efficiency and grant rates.

Written from this page's own data; every figure is computed from USPTO records and verified before publication.

Performance Statistics

84.4%
Allow Rate
+16.4% vs TC avg
866
Total Applications
+4.8%
Interview Lift
844
Avg Prosecution Days
Based on 854 resolved cases, 2023–2026

Rejection Statute Breakdown

0%
§101 Eligibility
31.2%
§102 Novelty
52.0%
§103 Obviousness
9.3%
§112 Clarity

Currently Pending Office Actions

App #TitleStatusAssignee
18761826 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Non-Final OA Samsung Electronics Co., Ltd.
18626691 SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING THE SAME Non-Final OA Samsung Electronics Co., Ltd.
18601335 3D INTEGRATED CIRCUIT (3DIC) STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Non-Final OA SAMSUNG ELECTRONICS CO., LTD.
18687829 DISPLAY SUBSTRATE AND DISPLAY APPARATUS Non-Final OA BOE Technology Group Co., Ltd.
18664321 DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME Non-Final OA Samsung Display Co., Ltd.
18601339 SEMICONDUCTOR DEVICE Non-Final OA Toshiba Electronic Devices & Storage Corporation
18522322 DISPLAY MODULE Final Rejection Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
18495832 BONDING A WAFER WITH A SUBSTRATE TO A WAFER WITH BACKSIDE INTERCONNECT WIRING Non-Final OA International Business Machines Corporation
18083994 STRESS MODULATING PATTERN CONTAINING BONDING DIELECTRIC LAYER Final Rejection International Business Machines Corporation
18601215 SEMICONDUCTOR DEVICE INCLUDING BUMPS AND METHOD OF MANUFACTURING THE SAME Non-Final OA SK hynix Inc.
18786797 FIELD-EFFECT TRANSISTOR DEVICE WITH GATE SPACER STRUCTURE Non-Final OA Taiwan Semiconductor Manufacturing Company, Ltd.
18787005 POST-FORMATION MENDS OF DIELECTRIC FEATURES Non-Final OA Taiwan Semiconductor Manufacturing Co., Ltd.
18780150 INNER SPACER FEATURES FOR MULTI-GATE TRANSISTORS Non-Final OA Taiwan Semiconductor Manufacturing Co., Ltd.
18779444 Source/Drain Contact with Low-K Contact Etch Stop Layer and Method of Fabricating Thereof Non-Final OA Taiwan Semiconductor Manufacturing Co., Ltd.
18601334 MEMS DEVICE AND MANUFACTURING METHOD FOR MEMS DEVICE Non-Final OA ROHM CO., LTD.
18610394 GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING TRENCH SHIELDING REGIONS AND METHODS OF FORMING THE SAME Non-Final OA Wolfspeed, Inc.
18813074 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Non-Final OA UNITED MICROELECTRONICS CORP.

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