Prosecution Insights
Last updated: April 19, 2026
Application No. 18/090,879

MICROELECTRONIC PACKAGE STRUCTURES WITH SOLDER JOINT ASSEMBLIES HAVING ROUGHENED BUMP STRUCTURES

Non-Final OA §102§103
Filed
Dec 29, 2022
Examiner
DINKE, BITEW A
Art Unit
2812
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Intel Corporation
OA Round
1 (Non-Final)
72%
Grant Probability
Favorable
1-2
OA Rounds
2y 5m
To Grant
84%
With Interview

Examiner Intelligence

Grants 72% — above average
72%
Career Allow Rate
541 granted / 748 resolved
+4.3% vs TC avg
Moderate +12% lift
Without
With
+12.0%
Interview Lift
resolved cases with interview
Typical timeline
2y 5m
Avg Prosecution
52 currently pending
Career history
800
Total Applications
across all art units

Statute-Specific Performance

§101
1.3%
-38.7% vs TC avg
§103
65.0%
+25.0% vs TC avg
§102
7.9%
-32.1% vs TC avg
§112
12.1%
-27.9% vs TC avg
Black line = Tech Center average estimate • Based on career data from 748 resolved cases

Office Action

§102 §103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 21 and 31-33 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Hosomi et al. (U.S. 2001/0027007 A1, hereinafter refer to Hosomi). Regarding Claim 21: Hosomi discloses an apparatus (see Hosomi, Figs.1-2 as shown below and ¶ [0003]) comprising: PNG media_image1.png 306 490 media_image1.png Greyscale PNG media_image2.png 313 456 media_image2.png Greyscale a first component (10) (see Hosomi, Figs.1-2 as shown above); a second component (20) (see Hosomi, Figs.1-2 as shown above); a first solder joint between the first component (10) and the second component (20) (see Hosomi, Figs.1-2 as shown above), the first solder joint comprising: a solder structure (30/21) comprising a first metal (30/21) (see Hosomi, Figs.1-2 as shown above); and a bump structure (12/40) between the solder structure (30/21) and the second component (20) (see Hosomi, Figs.1-2 as shown above), the bump structure (12/40) comprising: an inner portion comprising a second metal (12) (see Hosomi, Figs.1-2 as shown above); and an outer portion comprising an intermetallic compound (IMC) (40) of the first metal (30/21) and the second metal (12), the IMC (40) between and in contact with the inner portion of the bump structure (12) and the solder structure (30/21) (see Hosomi, Figs.1-2 as shown above and ¶ [0033]- ¶ [0034]); a second solder joint between the first component (10) and the second component (20) (see Hosomi, Figs.1-2 as shown above); and a dielectric material (50) between the first solder joint and the second solder joint (see Hosomi, Figs.1-2 as shown above), wherein the outer portion of the bump structure (40) is between and in contact with the inner portion of the bump structure (12) and the dielectric material (50) (see Hosomi, Figs.1-2 as shown above). Regarding Claim 31: Hosomi discloses an apparatus as set forth in claim 21 as above. Hosomi further teaches wherein the first component (10) comprises an interconnect (14) in contact with the bump structure (12/40), and a width of the interconnect (40) is less than a width of the bump structure (12/40) (see Hosomi, Figs.1-2 as shown above). Regarding Claim 32: Hosomi discloses an apparatus (see Hosomi, Figs.1-2 as shown above and ¶ [0003]) comprising: a plurality of solder joints (21/30/40/12) (see Hosomi, Figs.1-2 as shown above), wherein a first solder joint (21/30/40/12) of the plurality of solder joints comprises: a solder structure (30/21) comprising a first metal (30/21) (see Hosomi, Figs.1-2 as shown above); and a bump structure (12/40) in contact with the solder structure (30/21) (see Hosomi, Figs.1-2 as shown above), the bump structure (12/40) comprising: an inner portion comprising a second metal (12) (see Hosomi, Figs.1-2 as shown above); and an outer portion comprising an intermetallic compound (IMC) (40) of the first metal (30/21) and the second metal (12), the IMC (40) between and in contact with the inner portion of the bump structure (12) and the solder structure (30/21) (see Hosomi, Figs.1-2 as shown above and ¶ [0033]- ¶ [0034]); and a dielectric material (50) surrounding the plurality of solder joints (21/30/40/12), wherein the outer portion of the bump structure (40) is between and in contact with the inner portion of the bump structure (12) and the dielectric material (50) (see Hosomi, Figs.1-2 as shown above). Regarding Claim 33: Hosomi discloses an apparatus as set forth in claim 32 as above. Hosomi further teaches wherein the plurality of solder joints (21/30/40/12) are coupled to a die (10/20) (see Hosomi, Figs.1-2 as shown above). Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 23 and 26 rejected under 35 U.S.C. 103 as being unpatentable over Hosomi et al. (U.S. 2001/0027007 A1, hereinafter refer to Hosomi). Regarding Claim 23: Hosomi discloses an apparatus as applied to claim 21 above. Hosomi embodiment 1, Figs.1-2 is silent upon explicitly disclosing wherein the first metal is tin. However, Hosomi, embodiment 2, Figs.8-9 teaches wherein the first metal (121) is tin (see Hosomi, Figs.8-9 as shown below and ¶ [0010]- ¶ [0013]). PNG media_image3.png 234 478 media_image3.png Greyscale PNG media_image4.png 372 388 media_image4.png Greyscale Thus, it would have been obvious to one of ordinary skill in the art before effective filing date of the claimed invention to combine the teachings of embodiment 1 and embodiment 2 of Hosomi to enable the first metal of embodiment 1 to be tin as taught by embodiment 2 of Hosomi in order to from Au-Sn intermetallic compound layer. Regarding Claim 26: Hosomi discloses an apparatus as applied to claim 21 above. Hosomi embodiment 1, Figs.1-2 is silent upon explicitly disclosing wherein the inner portion of the bump structure comprise a sidewall, and the outer portion of the bump structure extends along the sidewall of the inner portion of the bump structure. However, Hosomi, embodiment 2, Figs.8-9 teaches wherein the inner portion of the bump structure (123) comprise a sidewall, and the outer portion of the bump structure (122) extends along the sidewall of the inner portion of the bump structure (123) (see Hosomi, Figs.8-9 as shown above and ¶ [0010]- ¶ [0013]). Thus, it would have been obvious to one of ordinary skill in the art before effective filing date of the claimed invention to combine the teachings of embodiment 1 and embodiment 2 of Hosomi to enable the inner portion of the bump structure to comprise a sidewall, and the outer portion of the bump structure extends along the sidewall of the inner portion of the bump structure as taught by embodiment 2 of Hosomi in order to from Au-Sn intermetallic compound layer. Claim(s) 22, 24-25, 28, 34, and 36 are rejected under 35 U.S.C. 103 as being unpatentable over Hosomi et al. (U.S. 2001/0027007 A1, hereinafter refer to Hosomi) as applied to claim 21 above, and further in view of Gandhi (U.S. 2015/0340328 A1, hereinafter refer to Gandhi). Regarding Claim 22: Hosomi discloses an apparatus as applied to claim 21 above. Hosomi is silent upon explicitly disclosing wherein the bump structure has a rectangular cross-section. Before effective filing date of the claimed invention the disclosed configuration of bump structure were known in order to improve a method and structure that facilitate the interconnection of semiconductor dice. For support see Gandhi, which teaches wherein the bump structure (406a/408a/410) has a rectangular cross-section (see Gandhi, Fig.2 as shown below and ¶ [0006]). PNG media_image5.png 460 646 media_image5.png Greyscale Thus, it would have been obvious to one of ordinary skill in the art before effective filing date of the claimed invention to combine the teachings of Hosomi and Gandhi to enable the Hosomi bump structure to have a rectangular cross-section as taught by Gandhi in order to improve a method and structure that facilitate the interconnection of semiconductor dice. Regarding Claim 24: Hosomi discloses an apparatus as applied to claim 21 above. Hosomi is silent upon explicitly disclosing wherein the dielectric material between the first solder joint and the second solder joint is an underfill material. Before effective filing date of the claimed invention the disclosed underfill material were known to be disposed between the first solder joint and the second solder joint in order to improve a method and structure that facilitate the interconnection of semiconductor dice. For support see Gandhi, which teaches wherein the dielectric material (414) between the first solder joint (406/408/410) and the second solder joint (406/408/410) is an underfill material (see Gandhi, Fig.2 as shown above, ¶ [0006], and ¶ [0042]). Hosomi discloses the claimed invention except for the material of dielectric material. Hence, it would have been obvious to one having ordinary skill in the art before effective filing date of the claimed invention to combine the teachings of Hosomi and Gandhi to enable the known underfill dielectric material as taught by Gandhi in order to improve a method and structure that facilitate the interconnection of semiconductor dice, since it has been held to be within the general skill of a worker in the art to select a known material on the base of its suitability, for its intended use involves only ordinary skill in the art. In re Leshin, 125 USPQ 416. Regarding Claim 25: Hosomi as modified teaches an apparatus as set forth in claim 14 as above. Hosomi further teaches wherein the underfill material (414) surrounds the first solder joint and the second solder joint (see Gandhi, Fig.2 as shown above). Regarding Claim 28: Hosomi discloses an apparatus as applied to claim 21 above. Hosomi is silent upon explicitly disclosing wherein the outer portion of the bump structure is a liner partially surrounding the inner portion of the bump structure. Before effective filing date of the claimed invention the disclosed configuration of bump structure were known in order to improve a method and structure that facilitate the interconnection of semiconductor dice. For support see Gandhi, which teaches wherein the outer portion of the bump structure (410) is a liner partially surrounding the inner portion of the bump structure (406/408) (see Gandhi, Fig.2 as shown above and ¶ [0006]). Thus, it would have been obvious to one of ordinary skill in the art before effective filing date of the claimed invention to combine the teachings of Hosomi and Gandhi to enable the Hosomi outer portion of the bump structure to have a liner configuration as taught by Gandhi in order to improve a method and structure that facilitate the interconnection of semiconductor dice. Regarding Claim 34: Hosomi discloses an apparatus as applied to claim 32 above. Hosomi is silent upon explicitly disclosing wherein the dielectric material is underfill. Before effective filing date of the claimed invention the disclosed underfill material were known to be disposed between the first solder joint and the second solder joint in order to improve a method and structure that facilitate the interconnection of semiconductor dice. For support see Gandhi, which teaches wherein the dielectric material (414) is underfill (see Gandhi, Fig.2 as shown above, ¶ [0006], and ¶ [0042]). Hosomi discloses the claimed invention except for the material of dielectric material. Hence, it would have been obvious to one having ordinary skill in the art before effective filing date of the claimed invention to combine the teachings of Hosomi and Gandhi to enable the known underfill dielectric material as taught by Gandhi in order to improve a method and structure that facilitate the interconnection of semiconductor dice, since it has been held to be within the general skill of a worker in the art to select a known material on the base of its suitability, for its intended use involves only ordinary skill in the art. In re Leshin, 125 USPQ 416. Regarding Claim 36: Hosomi discloses an apparatus as applied to claim 32 above. Hosomi is silent upon explicitly disclosing wherein the outer portion of the bump structure is a liner partially surrounding the inner portion of the bump structure. Before effective filing date of the claimed invention the disclosed configuration of bump structure were known in order to improve a method and structure that facilitate the interconnection of semiconductor dice. For support see Gandhi, which teaches wherein the outer portion of the bump structure (410) is a liner partially surrounding the inner portion of the bump structure (406/408) (see Gandhi, Fig.2 as shown above and ¶ [0006]). Thus, it would have been obvious to one of ordinary skill in the art before effective filing date of the claimed invention to combine the teachings of Hosomi and Gandhi to enable the Hosomi outer portion of the bump structure to have a liner configuration as taught by Gandhi in order to improve a method and structure that facilitate the interconnection of semiconductor dice. Claim(s) 27 and 35 rejected under 35 U.S.C. 103 as being unpatentable over Hosomi et al. (U.S. 2001/0027007 A1, hereinafter refer to Hosomi) as applied to claim 21 above, and further in view of Kang et al. (U.S. 2007/0152331 A1, hereinafter refer to Kang). Regarding Claim 27: Hosomi discloses an apparatus as applied to claim 21 above. Hosomi is silent upon explicitly disclosing wherein the outer portion of the bump structure is in contact with the second component. Before effective filing date of the claimed invention the disclosed outer portion of the bump structure were known to be in contact with the second component in order to obtain an alloy solder that is capable of increasing reliability of a junction between a semiconductor chip and a substrate. For support see Kang, which teaches wherein the outer portion of the bump structure (138 or 134) is in contact with the second component (120 or 110) (see Kang, Figs.2 and 3 as shown below and ¶ [0003]). PNG media_image6.png 344 679 media_image6.png Greyscale PNG media_image7.png 568 721 media_image7.png Greyscale Thus, it would have been obvious to one of ordinary skill in the art before effective filing date of the claimed invention to combine the teachings of Hosomi and Kang to enable the Hosomi outer portion of the bump structure to be in contact with the second component as taught by Kang in order to obtain an alloy solder that is capable of increasing reliability of a junction between a semiconductor chip and a substrate. Regarding Claim 35: Hosomi discloses an apparatus as applied to claim 32 above. Hosomi is silent upon explicitly disclosing wherein the inner portion of the bump structure comprise a sidewall, and the outer portion of the bump structure extends along the sidewall of the inner portion of the bump structure. Before effective filing date of the claimed invention the disclosed inner portion of the bump structure to comprise a sidewall, and the outer portion of the bump structure to extend along the sidewall of the inner portion of the bump structure in order to obtain an alloy solder that is capable of increasing reliability of a junction between a semiconductor chip and a substrate. For support see Kang, which teaches wherein the inner portion of the bump structure (122) comprise a sidewall, and the outer portion of the bump structure (138) extends along the sidewall of the inner portion of the bump structure (122) (see Kang, Figs.2 and 3 as shown above and ¶ [0003]). Thus, it would have been obvious to one of ordinary skill in the art before effective filing date of the claimed invention to combine the teachings of Hosomi and Kang to enable the Hosomi inner portion of the bump structure to comprise a sidewall, and the outer portion of the bump structure to extend along the sidewall of the inner portion of the bump structure as taught by Kang in order to obtain an alloy solder that is capable of increasing reliability of a junction between a semiconductor chip and a substrate. Claim(s) 29 and 37 rejected under 35 U.S.C. 103 as being unpatentable over Hosomi et al. (U.S. 2001/0027007 A1, hereinafter refer to Hosomi) as applied to claim 21 above, and further in view of Hsu et al. (U.S. 2024/0063159 A1, hereinafter refer to Hsu). Regarding Claim 29: Hosomi discloses an apparatus as applied to claim 21 above. Hosomi is silent upon explicitly disclosing wherein a distance between the first solder joint and the second solder joint is less than 25 microns. Before effective filing date of the claimed invention the disclosed distance between the first solder joint and the second solder joint were known to be less than 25 microns in order to obtain a reliability of the electrical connection. For support see Hsu, which teaches wherein a distance between the first solder joint and the second solder joint is less than 25 microns (see Hsu, Fig.1A, ¶ [0030], and ¶ [0038]). Thus, it would have been obvious to one of ordinary skill in the art before effective filing date of the claimed invention to combine the teachings of Hosomi and Hsu to enable distance between the first solder joint and the second solder joint Hosomi to be less than 25 microns as taught by Hsu in order to obtain a reliability of the electrical connection. Regarding Claim 37: Hosomi discloses an apparatus as applied to claim 32 above. Hosomi is silent upon explicitly disclosing wherein a distance between the first solder joint and a second solder joint of the plurality of solder joints is less than 25 microns. Before effective filing date of the claimed invention the disclosed distance between the first solder joint and the second solder joint were known to be less than 25 microns in order to obtain a reliability of the electrical connection. For support see Hsu, which teaches wherein a distance between the first solder joint and a second solder joint of the plurality of solder joints is less than 25 microns (see Hsu, Fig.1A, ¶ [0030], and ¶ [0038]). Thus, it would have been obvious to one of ordinary skill in the art before effective filing date of the claimed invention to combine the teachings of Hosomi and Hsu to enable distance between the first solder joint and the second solder joint Hosomi to be less than 25 microns as taught by Hsu in order to obtain a reliability of the electrical connection. Claim(s) 30 is rejected under 35 U.S.C. 103 as being unpatentable over Hosomi et al. (U.S. 2001/0027007 A1, hereinafter refer to Hosomi) as applied to claim 21 above, and further in view of Hwang (U.S. 2007/0128883 A1, hereinafter refer to Hwang). Regarding Claim 30: Hosomi discloses an apparatus as applied to claim 21 above. Hosomi is silent upon explicitly disclosing wherein the inner portion of the bump structure has a rough outer edge that is in contact with the outer portion of the bump structure. Before effective filing date of the claimed invention the disclosed inner portion of the bump structure to have a rough outer edge that is in contact with the outer portion of the bump structure in order to provide a reliable coupling, physically, thermally, or electrically between interconnects as part of an electrical device or a semiconductor device. For support see Hwang, which teaches wherein the inner portion of the bump structure (605/602) has a rough outer edge that is in contact with the outer portion of the bump structure (640) (see Hwang, Figs.6 and ¶ [0034]). Thus, it would have been obvious to one of ordinary skill in the art before effective filing date of the claimed invention to combine the teachings of Hosomi and Hwang to enable the inner portion of the bump structure of Hosomi to have a rough outer edge that is in contact with the outer portion of the bump structure as taught by Hwang in order to provide a reliable coupling, physically, thermally, or electrically between interconnects as part of an electrical device or a semiconductor device. Claim(s) 38 -40 are rejected under 35 U.S.C. 103 as being unpatentable over Hosomi et al. (U.S. 2001/0027007 A1, hereinafter refer to Hosomi) in view of Kang et al. (U.S. 2007/0152331 A1, hereinafter refer to Kang). Regarding Claim 38: Hosomi discloses an apparatus (see Hosomi, Figs.1-2 as shown above and ¶ [0003]) comprising: a first component (10) (see Hosomi, Figs.1-2 as shown above); a second component (20) (see Hosomi, Figs.1-2 as shown above); and a solder joint (21/30/40/12) between the first component (10) and the second component (20) (see Hosomi, Figs.1-2 as shown above), the solder joint (21/30/40/12) comprising: a solder structure (30/21) comprising a first metal (30/21) (see Hosomi, Figs.1-2 as shown above); and a bump structure (12/40) between the solder structure (30/21) and the second component (20) (see Hosomi, Figs.1-2 as shown above), the bump structure (12/40) comprising: an inner portion comprising a second metal (12), the inner portion having a top surface and a sidewall (see Hosomi, Figs.1-2 as shown above); and an outer portion comprising an intermetallic compound (IMC) (40) of the first metal (21/30) and the second metal (12), the IMC between and in contact with the top surface of the inner portion of the bump structure (12/40) and the solder structure (21/30) (see Hosomi, Figs.1-2 as shown above). Hosomi is silent upon explicitly disclosing wherein the IMC along the sidewall of the inner portion. Before effective filing date of the claimed invention the disclosed configuration of IML were known in order to obtain an alloy solder that is capable of increasing reliability of a junction between a semiconductor chip and a substrate. For support see Kang, which teaches wherein the IMC (138 or 134) along the sidewall of the inner portion (122 or 132) (see Kang, Figs.2 and 3 as shown above and ¶ [0003]). Thus, it would have been obvious to one of ordinary skill in the art before effective filing date of the claimed invention to combine the teachings of Hosomi and Kang to enable the Hosomi the IMC to be formed along the sidewall of the inner portion as taught by Kang in order to obtain an alloy solder that is capable of increasing reliability of a junction between a semiconductor chip and a substrate. Regarding Claim 39: Hosomi as modified teaches an apparatus as set forth in claim 38 as above. The combination of Hosomi and Kang further teaches wherein the IMC (134 or 138) extends along the sidewall to the second component (120 or 110) (see Kang, Figs.2 and 3 as shown above). Regarding Claim 40: Hosomi as modified teaches an apparatus as set forth in claim 38 as above. The combination of Hosomi and Kang further teaches wherein the solder joint is surrounded by a dielectric material (50), and the IMC (40) is between the inner portion of the bump structure (12) and the dielectric material (50) (see Hosomi, Figs.1-2 as shown above). Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to BITEW A DINKE whose telephone number is (571)272-0534. The examiner can normally be reached M-F 7 a.m. - 5 p.m.. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Davienne Monbleau can be reached at (571)272-1945. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /BITEW A DINKE/Primary Examiner, Art Unit 2812
Read full office action

Prosecution Timeline

Dec 29, 2022
Application Filed
Jul 14, 2023
Response after Non-Final Action
Jan 30, 2026
Non-Final Rejection — §102, §103 (current)

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Prosecution Projections

1-2
Expected OA Rounds
72%
Grant Probability
84%
With Interview (+12.0%)
2y 5m
Median Time to Grant
Low
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