Prosecution Insights
Last updated: July 17, 2026
Application No. 18/130,769

SEMICONDUCTOR MEMORY DEVICE

Non-Final OA §102§103
Filed
Apr 04, 2023
Priority
May 03, 2022 — RE 10-2022-0055029
Examiner
BOOTH, RICHARD A
Art Unit
2812
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Samsung Electronics Co., Ltd.
OA Round
1 (Non-Final)
86%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
94%
With Interview

Examiner Intelligence

Grants 86% — above average
86%
Career Allowance Rate
901 granted / 1052 resolved
+17.6% vs TC avg
Moderate +8% lift
Without
With
+8.4%
Interview Lift
resolved cases with interview
Typical timeline
2y 2m
Avg Prosecution
38 currently pending
Career history
1089
Total Applications
across all art units

Statute-Specific Performance

§101
0.4%
-39.6% vs TC avg
§103
83.3%
+43.3% vs TC avg
§102
6.2%
-33.8% vs TC avg
§112
3.5%
-36.5% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1052 resolved cases

Office Action

§102 §103
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant’s election without traverse of the first embodiment in the reply filed on 12/30/25 is acknowledged. Claim Rejections - 35 USC § 102 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claim(s) 1, 8, and 11-13 is/are rejected under 35 U.S.C. 102(a)(2) as being anticipated by Hu, US 2022/0140071. Hu shows the invention as claimed including a semiconductor memory device comprising: A substrate 201; An interlayer insulating layer 201 formed on the substrate (note that the base 201 may include a semiconductor substrate and an overlying interlayer insulating layer---see paragraphs 0020-0023); A plurality of first contact pads 202 embedded in the interlayer insulating layer; A plurality of first work function adjustment patterns 203 embedded in the interlayer insulating layer and respectively disposed on the plurality of first contact pads, the plurality of first work function adjustment patterns configured to adjust a work function of structures that include the plurality of first contact pads; A plurality of lower electrodes (205,209) respectively disposed on the plurality of first work function adjustment patterns; An upper electrode 212 covering the plurality of lower electrodes; and A dielectric layer 211 disposed between the upper electrode and the plurality of lower electrodes (see figs. 1-14 and paragraphs 0019-0059). As to dependent claim 8, note that the work function adjustment pattern 203 can be formed from more than one type of material (see paragraph 0027). With respect to dependent claim 11, note that Hu discloses wherein the plurality of lower electrodes extend in a first direction perpendicular to a top surface of the substrate (see, for example, figs. 5, 7, and 11). Concerning dependent claim 12, note that the plurality of lower electrodes and the upper electrode form a plurality of capacitors. As to dependent claim 13, note that top surfaces of the plurality of first work function adjustment patterns 203 are at or below a bottom-most surface of the plurality of lower electrodes 209. Claim Rejections - 35 USC § 103 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. This application currently names joint inventors. In considering patentability of the claims the examiner presumes that the subject matter of the various claims was commonly owned as of the effective filing date of the claimed invention(s) absent any evidence to the contrary. Applicant is advised of the obligation under 37 CFR 1.56 to point out the inventor and effective filing dates of each claim that was not commonly owned as of the effective filing date of the later invention in order for the examiner to consider the applicability of 35 U.S.C. 102(b)(2)(C) for any potential 35 U.S.C. 102(a)(2) prior art against the later invention. Claim(s) 4, 6-7, and 10 is/are rejected under 35 U.S.C. 103 as being unpatentable over Hu, US 2022/0140071. Hu is applied as above but does not expressly disclose wherein a work function of a material included in the plurality of first work function adjustment patterns is greater than a work function of a material included in the plurality of first contact pads. However, Hu discloses where the work function of one of the first contact pads (aluminum) is less than a material of the first work function adjustment patterns (titanium) (see paragraphs 0026-0027). In view of this disclosure, it would have been obvious to one of ordinary skill in the art at the time the invention was filed to select aluminum as the material of the first contact pads and titanium as the material of the work function adjustment patterns because a person of ordinary skill has good reason to pursue the known options within their technical grasp. Regarding dependent claims 6 and 10, Hu is applied as above but does not expressly disclose wherein the first work function adjustment patterns have a thickness from 1 nm to 10nm. However, a prima facie case of obviousness exists because it would have been obvious to one of ordinary skill in the art at the time the invention was filed to determine through routine experimentation the optimum thickness of the work function patterns depending upon a variety of factors including the desired protection against diffusion, reducing contact resistance, and adhesion enhancement and such limitation would not lend patentability to the instant invention absent a showing of unexpected results. As to dependent claim 7, note that Hu is applied as above but does not expressly disclose the device comprising a plurality of second contact pads respectively disposed on the plurality of work function adjustment patterns, wherein the plurality of second contact pads comprises the same material as a material of the plurality of first contact pads. However, Hu does disclose that the work function adjustment patterns 203 can be formed by more than one material (see paragraph 0027) where the upper material can be considered the second contact pads and the material can be the same as the first contact pads (titanium—see paragraphs 0026-0027). In view of this disclosure, it would have been obvious to one of ordinary skill in the art at the time the invention was filed to select titanium as the material of the first and second contact pads because a person of ordinary skill has good reason to pursue the known options within their technical grasp. Claim(s) 5 and 9 is/are rejected under 35 U.S.C. 103 as being unpatentable over Hu, US 2022/0140071 in view of Chu et al., US 2020/0335602. Hu is applied as above and additionally discloses where the plurality of first conductive pads comprises tungsten (see paragraph 0026) and also discloses the work function pattern comprising titanium nitride (see paragraph 0027) but does not expressly disclose the first work function adjustment patterns having a work function equal to or greater than 4.6 eV. However, Chu et al. discloses forming a titanium nitride layer with a work function of between 4.9-5.2 eV (see paragraph 0028). In view of this disclosure, it would have been obvious to one of ordinary skill in the art at the time the invention was filed to modify the primary reference of Hu so as to use as the barrier film a titanium nitride with the claimed work function because a person of ordinary skill has good reason to pursue the known options within their technical grasp. Allowable Subject Matter Claims 2-3 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. The following is a statement of reasons for the indication of allowable subject matter: the prior art, either singly or in combination, particularly US 2022/0140071, fails to anticipate or render obvious, the following limitations in addition to the claimed limitations: wherein each work function adjustment pattern of the plurality of first work function adjustment patterns comprises a metal chalcogenide, as required by dependent claim 2. Additionally, the prior art, particularly US 2022/0140071, fails to disclose one of the claimed first work function adjustment patterns, as required by dependent claim 3. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. KR 100623590 discloses the formation of contact pads 45a on a conductive plug (see abstract). Any inquiry concerning this communication or earlier communications from the examiner should be directed to RICHARD A BOOTH whose telephone number is (571)272-1668. The examiner can normally be reached Monday to Friday, 8:30 to 5:00. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Christine Kim can be reached at 571-272-8458. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /RICHARD A BOOTH/ Primary Examiner, Art Unit 2812 April 23, 2026
Read full office action

Prosecution Timeline

Apr 04, 2023
Application Filed
May 05, 2026
Non-Final Rejection mailed — §102, §103
Jun 15, 2026
Interview Requested
Jun 29, 2026
Applicant Interview (Telephonic)
Jun 29, 2026
Examiner Interview Summary

Precedent Cases

Applications granted by this same examiner with similar technology

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STRUCTURE WITH BURIED DOPED REGION FOR COUPLING SOURCE LINE CONTACT TO GATE STRUCTURE OF MEMORY CELL
3y 6m to grant Granted Jul 14, 2026
Patent 12684781
FERROELECTRIC MEMORY DEVICE WITH MULTI-LEVEL BIT CELL
3y 4m to grant Granted Jul 14, 2026
Patent 12684867
COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE STRUCTURE
3y 2m to grant Granted Jul 14, 2026
Patent 12674246
ELECTRODEPOSITION OF METALS USING AN IONICALLY RESISTIVE IONICALLY PERMEABLE ELEMENT OR A SHIELD SPATIALLY TAILORED TO DIE-LEVEL PATTERNS ON A SUBSTRATE
2y 10m to grant Granted Jul 07, 2026
Patent 12672373
LIGHT DETECTION ELEMENT
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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
86%
Grant Probability
94%
With Interview (+8.4%)
2y 2m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1052 resolved cases by this examiner. Grant probability derived from career allowance rate.

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