Prosecution Insights
Last updated: October 25, 2026
Application No. 18/150,106

SEMICONDUCTOR DEVICE AND METHODS FOR FORMING THE SAME

Final Rejection §112
Filed
Jan 04, 2023
Examiner
RAHMAN, KHATIB A
Art Unit
2818
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Vanguard International Semiconductor Corporation
OA Round
3 (Final)
91%
Grant Probability
Favorable
4-5
OA Rounds
0m
Est. Remaining
96%
With Interview

Examiner Intelligence

Grants 91% — above average
91%
Career Allowance Rate
436 granted / 478 resolved
+23.2% vs TC avg
Minimal +5% lift
Without
With
+4.9%
Interview Lift
resolved cases with interview
Typical timeline
2y 2m
Avg Prosecution
26 currently pending
Career history
501
Total Applications
across all art units

Statute-Specific Performance

§103
49.0%
+9.0% vs TC avg
§102
27.3%
-12.7% vs TC avg
§112
18.6%
-21.4% vs TC avg
Black line = Tech Center average estimate • Based on career data from 478 resolved cases

Office Action

§112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Claim 1 directed to an allowable product. Pursuant to the procedures set forth in MPEP § 821.04(B), claims 16-26 , directed to the process of making or using an allowable product, previously withdrawn from consideration as a result of a restriction requirement, Claims 16-26 ,hereby rejoined and fully examined for patentability under 37 CFR 1.104. Because all claims previously withdrawn from consideration under 37 CFR 1.142 have been rejoined, the restriction requirement as set forth in the Office action mailed on 09/04/2025 is hereby withdrawn. In view of the withdrawal of the restriction requirement as to the rejoined inventions, applicant(s) are advised that if any claim presented in a continuation or divisional application is anticipated by, or includes all the limitations of, a claim that is allowable in the present application, such claim may be subject to provisional statutory and/or nonstatutory double patenting rejections over the claims of the instant application. Once the restriction requirement is withdrawn, the provisions of 35 U.S.C. 121 are no longer applicable. See In re Ziegler, 443 F.2d 1211, 1215, 170 USPQ 129, 131-32 (CCPA 1971). See also MPEP § 804.01. Response to Amendment Amendment dated 08/24/2026 has been acknowledged. Claims 1, 7 & 16 are amended. Claims 16-26 were previously withdrawn by applicant. Claims 1-26 are pending in application. Response to Arguments Applicant’s argument dated 08/24/2026 has been acknowledged and persuasive. Accordingly claims 1-18 are allowed in this office action. Claims 19-26 are subject to 112(b) issue and therefore are rejected under 35 USC § 112. Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 19-26 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Claim 19 in 8 recites “….an interlayer dielectric layer (ILD)” . It is not clear if it was referring to “an interlayer dielectric layer” In line 15 of claim 1 or different interlayer dielectric layer. Examiner is interpreting the associated limitation as “….forming [[an]] the interlayer dielectric layer [[(ILD)]] on the top surface of the epitaxial layer…..” . Claim 24 in line 6 recites “…….an interlayer dielectric layer (ILD)…….”. It is not clear if it was referring to “an interlayer dielectric layer” In line 15 of claim 1 or different interlayer dielectric layer. Examiner is interpreting the associated as “….forming [[an]] the interlayer dielectric layer [[(ILD)]] on the top surface of the epitaxial layer…..” . Claim 24 in lines 9-11 further recites “removing portions of the interlayer dielectric layer, a portion of the first heavily doped portion, a portion of the first well region, a portion of the third heavily doped portion and a portion of the second well region to form a first contact hole and a second contact hole” in which subject matter of the limitation “removing portions of the interlayer dielectric layer, a portion of the first heavily doped portion, a portion of the first well region … to form a first contact hole…” is already claimed in claim 19. It is not clear if it was intended to recite “removing [[portions of the interlayer dielectric layer, a portion of the first heavily doped portion, a portion of the first well region]], a portion of the third heavily doped portion and a portion of the second well region to form [[a first contact hole and]] a second contact hole” or different limitation. Examiner is interpreting as such. Claim 25 in line 4 recites “….the fourth heavily doped”. The limitation “the fourth heavily doped” has an antecedent base issue. Examiner is interpreting the limitation as “forming [[the]] a fourth heavily doped portion by doping the second well region through the second contact hole……” Claims 20-26 are also rejected being dependent on claim 19. Allowable Subject Matter Claims 1-18 are allowed. With respect to claim 1, the prior art made of record does not teach or suggest either alone or in combination “a contact plug disposed in a contact hole and between the gate structure and the trench structure, wherein the contact hole extends through the interlayer dielectric layer, and wherein a top surface of the contact plug is substantially level with a top surface of the interlayer dielectric layer” in further combination with the additionally claimed limitations, as they are claimed by the Applicant. Applicants’ arguments filed 08/24/2026 regarding Baliga fails to teach above limitation are persuasive. The other cited arts, either alone or in combination, fails to cure deficiencies of Baliga. Claims 2-18 are allowed being dependent on claim 1. Conclusion Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any extension fee pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the date of this final action. (FP 7.40) Any inquiry concerning this communication or earlier communications from the examiner should be directed to KHATIB A RAHMAN whose telephone number is (571)270-0494. The examiner can normally be reached on MON-FRI 8:00 am- 5:00 pm (Arizona). Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor Steven Loke, can be reached on (571) 272-1657. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative or access to the automated information system, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /K.A.R/Examiner, Art Unit 2818 /STEVEN H LOKE/Supervisory Patent Examiner, Art Unit 2818
Read full office action

Prosecution Timeline

Jan 04, 2023
Application Filed
Nov 24, 2025
Non-Final Rejection mailed — §112
Jan 20, 2026
Response Filed
Jun 15, 2026
Non-Final Rejection mailed — §112
Aug 24, 2026
Response Filed
Oct 01, 2026
Final Rejection mailed — §112 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12772542
MULTI-THRESHOLD VOLTAGE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SAME
2y 10m to grant Granted Oct 20, 2026
Patent 12757397
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR MEMORY DEVICE
3y 11m to grant Granted Oct 06, 2026
Patent 12757419
SCHOTTKY BARRIER DIODE
3y 2m to grant Granted Oct 06, 2026
Patent 12745393
SEMICONDUCTOR MEMORY DEVICE
4y 0m to grant Granted Sep 22, 2026
Patent 12740129
CONDUCTIVE OXYGEN BARRIER FOR COMPLEX OXIDES
2y 9m to grant Granted Sep 15, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

Strategy Recommendation AI-generated — please review before filing

Get a prosecution strategy drawn from examiner precedents, rejection analysis, and claim mapping.
Typically takes 5-10 seconds — AI-generated, attorney review required before filing

Prosecution Projections

4-5
Expected OA Rounds
91%
Grant Probability
96%
With Interview (+4.9%)
2y 2m (~0m remaining)
Median Time to Grant
High
PTA Risk
Based on 478 resolved cases by this examiner. Grant probability derived from career allowance rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month