Prosecution Insights
Last updated: April 19, 2026
Application No. 18/154,739

SEMICONDUCTOR PACKAGE STRUCTURE AND MANUFACTURING METHOD

Non-Final OA §103
Filed
Jan 13, 2023
Examiner
PHAM, LONG
Art Unit
2897
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Changxin Memory Technologies Inc.
OA Round
1 (Non-Final)
91%
Grant Probability
Favorable
1-2
OA Rounds
2y 6m
To Grant
97%
With Interview

Examiner Intelligence

Grants 91% — above average
91%
Career Allow Rate
1493 granted / 1633 resolved
+23.4% vs TC avg
Moderate +6% lift
Without
With
+5.6%
Interview Lift
resolved cases with interview
Typical timeline
2y 6m
Avg Prosecution
38 currently pending
Career history
1671
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
39.9%
-0.1% vs TC avg
§102
41.8%
+1.8% vs TC avg
§112
11.1%
-28.9% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1633 resolved cases

Office Action

§103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant’s election without traverse of claims 1-7 in the reply filed on 8/14/25 is acknowledged. Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 1, 2, 3, and 4 is/are rejected under 35 U.S.C. 103 as being unpatentable over Pagaila et al. (US pat 8962393) in combination with KR 100890073. With respect to claim 1, Pagaila et al. teach a semiconductor package structure, comprising (see figs. 1-19, particularly fig. 4 and associated text): a first base plate 202 provided with a first surface (upper); a first chip stack body 406 located on the first base plate, and the first chip stack body is electrically connected to the first surface of the first base plate; an interposer layer 204 located on the first chip stack body, wherein the interposer layer is provided with a first interconnection surface (upper), the first interconnection surface is provided with a first interconnection region (area in middle of 204) and a second interconnection region (right edge of 204), and the first interconnection region is electrically connected to the first base plate; and a molding layer 418 configured to seal the first chip stack body, the interposer layer and the first surface of the first base plate, wherein the first interconnection region is unsealed by the molding layer, the second interconnection region is sealed by the molding layer, and a first material layer 304 is formed on a sidewall between the first interconnection region and a top surface of the molding layer on the second interconnection region. Pagaila et al. fail to teach the first chip stack body includes vertically stacked chips. KR ‘073 teaches using vertically stacked chips. See the text of Disclosure of paper. It would have been obvious to one of ordinary skill in the art of making semiconductor devices to incorporate the teaching of KR ‘073 into the device of Pagaila et al. to achieve device density and operating speed. See the text of Disclosure of paper. With respect to claim 2, Pagaila et al. teach a material of the first material layer comprises a conductive material or an insulation material. See fig. 4 and associated text. With respect to claim 3, Pagaila et al. teach a second material layer 306 located on the top surface of the molding layer, wherein a material of the second material layer is the same as a material of the first material layer. See fig. 4 and associated text. With respect to claim 5, Pagaila et al. in combination with KR ‘073 teach a plurality of first conductive wires 420 , wherein each of the plurality of first semiconductor chips is electrically connected to the first base plate by means of a respective one of the plurality of first conductive wires; and a plurality of second conductive wires 408, wherein the second interconnection region is electrically connected to the first base plate by means of the plurality of second conductive wires. See fig. 4 and associated text. Claim(s) 6 is/are rejected under 35 U.S.C. 103 as being unpatentable over Pagaila et al. (US pat 8962393) and KR 100890073 as applied to claims 1, 2, 3, and 4 above, and further in view of Shim et al. (US pat 8309397). With respect to claim 6, Pagaila et al. fail to the edge of the molding layer facing the first connection region is sloped. Shim et al. teach a similar device in which a mold layer 124 having a recess having a sloped opening to cover an interposer 108. See fig. 1 and associated text. It would have been obvious to one of ordinary skill in the art of making semiconductor devices to incorporate the teaching of Shim et al. into the device of Pagaila et al. to allow the placement of additional IC on the disposer. See fig. 1 and associated text. Allowable Subject Matter Claims 5 and 7 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Examiner’s Cited References The cited references generally show the similar or related structure having an interposer or chip having encapsulated part for connections and non-encapsulated part without connections claimed by applicant. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to LONG PHAM whose telephone number is (571)272-1714. The examiner can normally be reached Mon-Friday. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Jacob Choi can be reached at 469-295-9060. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. LONG . PHAM Examiner Art Unit 2823 /LONG PHAM/Primary Examiner, Art Unit 2897
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Prosecution Timeline

Jan 13, 2023
Application Filed
Feb 03, 2026
Non-Final Rejection — §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12604733
PACKAGE STRUCTURES WITH COLLAPSE CONTROL FEATURES
2y 5m to grant Granted Apr 14, 2026
Patent 12604754
PACKAGE STRUCTURES WITH NON-UNIFORM INTERCONNECT FEATURES
2y 5m to grant Granted Apr 14, 2026
Patent 12604766
SEMICONDUCTOR PACKAGE STRUCTURE
2y 5m to grant Granted Apr 14, 2026
Patent 12604739
Semiconductor Device and Method of Forming a 3-D Stacked Semiconductor Package Structure
2y 5m to grant Granted Apr 14, 2026
Patent 12599033
QUASI-MONOLITHIC INTEGRATED PACKAGING ARCHITECTURE WITH MID-DIE SERIALIZER/DESERIALIZER
2y 5m to grant Granted Apr 07, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
91%
Grant Probability
97%
With Interview (+5.6%)
2y 6m
Median Time to Grant
Low
PTA Risk
Based on 1633 resolved cases by this examiner. Grant probability derived from career allow rate.

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