Prosecution Insights
Last updated: April 19, 2026
Application No. 18/155,061

SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING SAME

Final Rejection §102
Filed
Jan 16, 2023
Examiner
LI, MEIYA
Art Unit
2811
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Changxin Memory Technologies Inc.
OA Round
2 (Final)
69%
Grant Probability
Favorable
3-4
OA Rounds
3y 8m
To Grant
95%
With Interview

Examiner Intelligence

Grants 69% — above average
69%
Career Allow Rate
628 granted / 912 resolved
+0.9% vs TC avg
Strong +26% interview lift
Without
With
+26.0%
Interview Lift
resolved cases with interview
Typical timeline
3y 8m
Avg Prosecution
52 currently pending
Career history
964
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
34.3%
-5.7% vs TC avg
§102
26.5%
-13.5% vs TC avg
§112
36.0%
-4.0% vs TC avg
Black line = Tech Center average estimate • Based on career data from 912 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claim(s) 11, 15 and 16 is/are rejected under 35 U.S.C. 102(a)(1)/(a)(2) as being anticipated by Ahn et al. (2021/0391259). As for claim 11, Ahn et al. show in Figs. 1, 2A (except AX region), 5 and related text a semiconductor structure 300, comprising: a substrate 110, a bit line contact hole DCH being provided in the substrate; a bit line contact structure (lower portion of) DC/142/143/144 comprising a bit line contact isolation layer 142/143/144 and a bit line contact layer (lower portion of) DC, wherein the bit line contact isolation layer at least covers a side wall of the bit line contact hole, and a remaining space of the bit line contact hole is full of the bit line contact layer; and a bit line stack layer 330 (upper portion of DC)/332/334/336 positioned on a top surface of the bit line contact structure, wherein the bit line stack layer comprises a first conductive layer 330 (upper portion of DC)/332, a second conductive layer 334 and a dielectric layer 336 stacked in sequence from bottom to top, and a width of a top surface of the first conductive layer is smaller than a width of a bottom surface of the first conductive layer (Fig. 5; [0069]). As for claim 15, Ahn et al. show the bit line contact isolation layer comprises: a first isolation layer 142 at least covering the side wall of the bit line contact hole; a second isolation layer 143 covering an exposed side surface of the first isolation layer; and a third isolation layer 144 covering an exposed side surface of the second isolation layer (Fig. 2A). As for claim 16, Ahn et al. show both the first isolation layer and the third isolation layer comprise a silicon nitride layer ([0040], [0049], [0050], [0102]); the second isolation layer comprises a silicon oxide layer ([0050],[0102]); and the bit line contact layer comprises a polysilicon layer ([0033]). Response to Arguments Applicant’s arguments with respect to claim(s) 11, 15 and 16 have been considered but are moot because the new ground of rejection does not rely on any reference applied in the prior rejection of record for any teaching or matter specifically challenged in the argument. Conclusion Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to MEIYA LI whose telephone number is (571)270-1572. The examiner can normally be reached Monday-Friday 7AM-3PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, LYNNE GURLEY can be reached at (571)272-1670. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /MEIYA LI/Primary Examiner, Art Unit 2811
Read full office action

Prosecution Timeline

Jan 16, 2023
Application Filed
Sep 17, 2025
Non-Final Rejection — §102
Dec 17, 2025
Response Filed
Jan 09, 2026
Final Rejection — §102 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12598744
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
2y 5m to grant Granted Apr 07, 2026
Patent 12575120
DEPOSITING A STORAGE NODE
2y 5m to grant Granted Mar 10, 2026
Patent 12520484
SEMICONDUCTOR DEVICES
2y 5m to grant Granted Jan 06, 2026
Patent 12520731
MEMORY DEVICE
2y 5m to grant Granted Jan 06, 2026
Patent 12506077
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
2y 5m to grant Granted Dec 23, 2025
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
69%
Grant Probability
95%
With Interview (+26.0%)
3y 8m
Median Time to Grant
Moderate
PTA Risk
Based on 912 resolved cases by this examiner. Grant probability derived from career allow rate.

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