Prosecution Insights
Last updated: August 16, 2026
Application No. 18/159,310

METHOD FOR INSPECTING MASK, METHOD FOR MANUFACTURING MASK, APPARATUS FOR INSPECTING MASK, STORAGE MEDIUM, AND MASK

Final Rejection §102§103§112
Filed
Jan 25, 2023
Priority
Jan 31, 2022 — JP 2022-013683
Examiner
CHEN, KEATH T
Art Unit
1716
Tech Center
1700 — Chemical & Materials Engineering
Assignee
Dai Nippon Printing Co., Ltd.
OA Round
2 (Final)
30%
Grant Probability
At Risk
3-4
OA Rounds
1m
Est. Remaining
55%
With Interview

Examiner Intelligence

Grants only 30% of cases
30%
Career Allowance Rate
348 granted / 1151 resolved
-34.8% vs TC avg
Strong +25% interview lift
Without
With
+24.6%
Interview Lift
resolved cases with interview
Typical timeline
3y 8m
Avg Prosecution
68 currently pending
Career history
1223
Total Applications
across all art units

Statute-Specific Performance

§101
0.2%
-39.8% vs TC avg
§103
57.2%
+17.2% vs TC avg
§102
15.1%
-24.9% vs TC avg
§112
25.6%
-14.4% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1151 resolved cases

Office Action

§102 §103 §112
DETAILED CORRESPONDENCE Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Response to Amendment Applicants’ submission, filed on 06/02/2026, addressing rejection of claims 15-19 from the non-final office action (02/17/2026), by amending claims 15 and 18-19 and cancelling claim 16 is entered and will be addressed below. Election/Restrictions No claims are currently withdrawn. Specification The disclosure is objected to because of the following informalities: “The correction step may include steps S21 to S24 shown in FIG. 18” ([0211]) should be “The correction step may include steps S21 to S24 shown in FIG. 21” because S21 to S24 are not shown in Fig. 18. Appropriate correction is required. Claim interpretations The “wherein the mask is in a state in which an adjusted tension is applied to the first end portion and the second end portion in the x direction, the adjusted tension is a tension applied to the first end portion and the second end portion in the x direction upon completion of a correction step and an adjustment step, the correction step is a step of applying tension to the first end portion and the second end portion so that the first end portion and the second end portion become parallel in a y direction orthogonal to the x direction, the adjustment step is a step of increasing the tension until a simple amplitude converted value ΔC calculated based on y components yo to yn, of coordinates of the reference points Po to Pn in the y direction is reduced to a value less than or equal to a first threshold value, the first threshold is 1.11 pm, the simple amplitude converted value ΔC is a difference between maximum and minimum values of simple amplitude converted components y"o to y"n, the simple amplitude converted components y"o to y"n are calculated by multiplying an average amplitude magnification Mag.Y by y components y'o to y'n of a cosine function y’, the cosine function y' is a function that simulates a cosine wave in which the phase advances by 2[Symbol font/0x70] from the x-component xo of the reference point Po to the x- component xn of the reference point Pn, the average amplitude magnification Mag.Y is an average of amplitude magnifications Yo to Yn calculated by multiplying the y components yo to yn by the y components y'o to y'n, when under the adjusted tension, the mask has amplitude AS that is greater than or equal to a third threshold and less than or equal to a fourth threshold, the amplitude ΔS is a difference between maximum and minimum values of y components yo to yn of coordinates of the reference points Po to Pn of the mask under the adjusted tension, the third threshold is 1.8 x ΔC + 0.40 m, and the fourth threshold is 1.8 x ΔC + 2.00 m” of claim 15 is a description of the inspection method. This is a product by process claim (see MPEP 2113). A mask that satisfying this relationship, although made or inspected by any other method, is considered read into the claim. As Applicants argue that the method of inspection is part of the mask structure, which the examiner disagrees, the examiner notices that even the method steps are not presented clearly in 112(b) rejection below. However, “the thirty-first cross point is a cross point of the cell first contour and the cell third contour of one of the cells that is closest to the first end portion, and the forty-first cross point is a cross point of the cell second contour and the cell third contour of one of the cells that is closest to the second end portion”, it appears the thirty-first and forty-first have nothing to do with the numbering scheme “n+1 reference points Po to Pn“ of claim 1. To avoid confusion, L3 seems to be just the two corner holes near the third end 503. Claim Rejections - 35 USC § 112 The text of those sections of Title 35, U.S. Code not included in this action can be found in a prior Office action. Claims 15 and 17-19 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. As Applicants argue that the measurement steps are part of the structure (bottom of page 9), these steps are provisionally rejected under this interpretation. The examiner considers these step is not part of the product mask as explain in the claim interpretation above. Claim 15 recites “n+1 reference points Po to Pn, where n is a positive integer, arranged in the x direction”, it is not clear the location of the reference points. In other words, where are the locations of Po or Pn, relative to the edge/end of the mask. The locations of these end points will affect the correction step as shown in Fig. 21. Furthermore, Fig. 21 requires step S23, but Ga to Gd is not defined. Still furthermore, it is not clear how to select the ideal points Pa0, Pb0, Pc0, and Pd0, without these locations, it is not clear how to measure Ga to Gd and how to practice step S23, and therefore, how to do the correction step. The rest of claim 15 that recites “the correction step is a step of applying tension to the first end portion and the second end portion so that the first end portion and the second end portion become parallel in a y direction orthogonal to the x direction … the third threshold is 1.8 x ΔC + 0.40 m, and the fourth threshold is 1.8 x ΔC + 2.00 m” of claim 15, there are many problems in this portion of claim. This portion of claim recites various formula but lack the step decision as shown in Fig. 18. Furthermore, it is not clear what is “the simple amplitude converted components y"o to y"n are calculated by multiplying an average amplitude magnification Mag.Y by y components y'o to y'n of a cosine function y’“. The list of problems is not exhaustive. Claim 15 will be examined based on product by process claim examination, that is the inspection method is not part of the claimed structure. Dependent claims 17-19 are also rejected under USC 112(b) at least due to dependency to rejected claim 15. Claim Rejections - 35 USC § 102 The text of those sections of Title 35, U.S. Code not included in this action can be found in a prior Office action. Claim Rejections - 35 USC § 103 The text of those sections of Title 35, U.S. Code not included in this action can be found in a prior Office action. Claims 15-19 are rejected under 35 U.S.C. 102(a)(1) as anticipated by or, in the alternative, under 35 U.S.C. 103 as obvious over IKENAGA (US 20190323117, hereafter ‘117). ‘117 teaches the limitations of: Claim 15: As shown in FIG. 1, the deposition mask 20 has a plurality of effective areas 22 that is arranged along its longitudinal direction, peripheral areas 23 surrounding the effective areas 22, and a pair of ear areas 24 that are positioned on end portions of the longitudinal direction of the deposition mask 20, with the effective areas 22 and the peripheral areas 23 being sandwiched therebetween ([0064], includes the claimed “A mask comprising: a first end portion and a second end portion that are opposite to each other in an x direction; an intermediate portion including one or more cells that are located between the first end portion and the second end portion”), A plurality of through holes 25 are formed in the effective area 22 in a desired pattern ([0065], including the claimed “and each of which includes a plurality of through holes”); The metal plate 64 is manufactured by rolling a metal material. In an annealing step succeeding to the rolling step, the metal plate 64 is held at a predetermined temperature for a predetermined time, so that a stress remaining in the metal plate 64 is reduced. In this embodiment, in the annealing step, by adjusting the holding temperature and/or the holding time of the metal plate 64, a stress remaining in the metal plate 64 is allowed to remain therein at a desired amount. (Fig. 16, [0124], 4th last sentence, same as rolling process of instant application), by evaluating the width along the width direction dW of the deposition mask 20 in the central portion of the longitudinal direction dL, a warp degree of the deposition mask 20 in the central portion of the longitudinal direction dL can be evaluated therefrom. Namely, when the width along the width direction dW of the deposition mask 20 in the central portion of the longitudinal direction dL is evaluated to be small, the warp of the deposition mask 20 in the central portion of the longitudinal direction dL can be evaluated to be large (a curvature factor of the curve is large, a radius of curvature of the curve is small). On the other hand, when the width along the width direction dW of the deposition mask 20 in the central portion of the longitudinal direction dL is evaluated to be large, the warp of the deposition mask 20 in the central portion of the longitudinal direction dL can be evaluated to be small (a curvature factor of the curve is small, a radius of curvature of the curve is large) (Fig. 5, [0083], in other words, the warping is different dimension are correlated), FIGS. 26 and 27 are tables showing, out of the manufactured deposition masks, as to deposition masks warped to be convex on the first surface in a cross section orthogonal to the longitudinal direction in the center portion of the longitudinal direction, an annealing condition in these examples (annealing temperature and annealing time), a value (D2−D1) of the deposition mask manufactured through the annealing of each annealing condition, and deposition quality using each deposition mask ([0157], note D1 is described [0106] and Fig. 11 and D2 is described in [0107] and Fig. 12, in short, Figs. 26-27 shows a variation of warping degree, some acceptable, some not acceptable, and some borderline, depending on annealing temperature and time. As the warping is correlated in various directions, the warping in the planar direction, as demonstrated in Fig. 5, is also having variation of warping degree. Therefore, some masks with borderline warping would have fit the claimed “and n+1 reference points Po to Pn, where n is a positive integer, arranged in the x direction, wherein the mask is in a state in which an adjusted tension is applied to the first end portion and the second end portion in the x direction, the adjusted tension is a tension applied to the first end portion and the second end portion in the x direction upon completion of a correction step and an adjustment step, the correction step is a step of applying tension to the first end portion and the second end portion so that the first end portion and the second end portion become parallel in a y direction orthogonal to the x direction, the adjustment step is a step of increasing the tension until a simple amplitude converted value ΔC calculated based on y components yo to yn, of coordinates of the reference points Po to Pn in the y direction is reduced to a value less than or equal to a first threshold value, the first threshold is 1.11 μm, the simple amplitude converted value ΔC is a difference between maximum and minimum values of simple amplitude converted components y"o to y"n, the simple amplitude converted components y"o to y"n are calculated by multiplying an average amplitude magnification Mag.Y by y components y'o to y'n of a cosine function y’, the cosine function y' is a function that simulates a cosine wave in which the phase advances by 2[Symbol font/0x70] from the x-component xo of the reference point Po to the x- component xn of the reference point Pn, the average amplitude magnification Mag.Y is an average of amplitude magnifications Yo to Yn calculated by multiplying the y components yo to yn by the y components y'o to y'n, when under the adjusted tension, the mask has amplitude ΔS that is greater than or equal to a third threshold and less than or equal to a fourth threshold, the amplitude ΔS is a difference between maximum and minimum values of y components yo to yn of coordinates of the reference points Po to Pn of the mask under the adjusted tension, the third threshold is 1.8 x ΔC + 0.40 m, and the fourth threshold is 1.8 x ΔC + 2.00 m ”, alternatively, it is obvious some of the mask fit such equation by using adjusted tension). Claim 17: as the borderline mask have certain degree of warping, some would have the property of “wherein the simple amplitude converted value ΔC is greater than or equal to 0.20 μm”. Claim 18: “further comprising: a first end and a second end that are ends of the mask in the x direction; and a third end and a fourth end that are ends of the mask in the y direction, wherein each of the one or more cells includes a cell third contour extending along the third end, a cell fourth end extending along the fourth end, a cell first contour extending from a cell first end of the cell third contour to a cell first end of the cell fourth contour, and a cell second contour extending from a cell second end of the cell third contour to a cell second end of the cell fourth end” is a definition, when mask 20 is warped like Fig. 5, the holes 25 will likewise bend accordingly, an inward bending distortion of the effective area would have had similar shape as shown in Fig. 13B of instant application, the claimed “the cell third contours of the one or more cells include at least one inner portion and at least one outer portion with the mask corrected by the correction step, the inner portion is located further inward than a third straight line, the outer portion is located further outward than the third straight line, the third straight line is an imaginary line connecting a thirty-first cross point with a forty-first cross point, the thirty-first cross point is a cross point of the cell first contour and the cell third contour of one of the cells that is closest to the first end portion, and the forty-first cross point is a cross point of the cell second contour and the cell third contour of one of the cells that is closest to the second end portion”. Claim 19: “further comprising: a first end and a second end that are ends of the mask in the x direction; and a third end and a fourth end that are ends of the mask in the y direction, wherein each of the one or more cells includes a cell third contour extending along the third end, a cell fourth end extending along the fourth end, a cell first contour extending from a cell first end of the cell third contour to a cell first end of the cell fourth contour, and a cell second contour extending from a cell second end of the cell third contour to a cell second end of the cell fourth end” is a definition, As there are various annealing conditions can be applied to the mask, when mask 20 is warped like Fig. 5, the holes 25 will likewise bend accordingly, an inward bending distortion of the effective area would have had similar shape as shown in Fig. 13B of instant application, the claimed “the cell third contours of the one or more cells include at least one inner portion and at least one outer portion with no tension being applied to the mask, the inner portion is located further inward than a third straight line, the outer portion is located further outward than the third straight line, the third straight line is an imaginary line connecting a thirty-first cross point with a forty-first cross point, the thirty-first cross point is a cross point of the cell first contour and the cell third contour of one of the cells that is closest to the first end portion, and the forty-first cross point is a cross point of the cell second contour and the cell third contour of one of the cells that is closest to the second end portion”. Response to Arguments Applicant's arguments filed 06/02/2026 have been fully considered but they are not persuasive. Applicants argue that ‘117 is flattened and has a perfectly straight and uniform without any in-plane distortion by citing [0107], and see ΔS would be zero, see the middle of page 9. This argument is found not persuasive. [0107] of ‘117 merely mentioned flattened. Nowhere in [0107] states that flattening process will result in perfectly straight and uniform without any in-plane distortion. Actually, Fig. 5 of ‘117 shows even flattened mask can have distortion. The examiner considered flatten method is similar to tensioning the mask at the two ends for correction. It corrects mask but will not and cannot be perfect. Note many of the references cited in the conclusion is considered also resulted in a mask that overlaps with the masks inspected by Applicants’ method. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. US 20190010601 is cited for curling is by pulling (Fig. 3b). US 20220320438 is cited for an mask inspection method, “C shape” distortion with different degree of offsets (Figs. 1A-1C) and higher order distortion (Fig. 1D). US 20190140178 is cited for distortion with or without stretching and dimensions measurement (Figs. 23-29. Note some of the NG in Fig. 29 has the property of instant application). CN 104762590 is cited for “since a single unitary structure mask plate stress is not evenly so that each evaporation unit has a single mask plate is deformed in different degrees” (P2, 1st complete paragraph). JP 2014148743 is cited for metal plate after rolling having different degree of bending, depending on the cut from the metal sheet (Figs. 7-9). JP 2016053192 is cited for effective area 22 bend along with the mask 20 (Fig. 11). US 20150328662 is cited for mask production method including deviation amount (Fig. 9B). THIS ACTION IS MADE FINAL. Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to KEATH T CHEN whose telephone number is (571)270-1870. The examiner can normally be reached 8:30am-5:00 pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Parviz Hassanzadeh can be reached at 571-272-1435. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /KEATH T CHEN/ Primary Examiner, Art Unit 1716
Read full office action

Prosecution Timeline

Jan 25, 2023
Application Filed
Feb 17, 2026
Non-Final Rejection mailed — §102, §103, §112
Jun 02, 2026
Response Filed
Jun 30, 2026
Final Rejection mailed — §102, §103, §112 (current)

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Prosecution Projections

3-4
Expected OA Rounds
30%
Grant Probability
55%
With Interview (+24.6%)
3y 8m (~1m remaining)
Median Time to Grant
Moderate
PTA Risk
Based on 1151 resolved cases by this examiner. Grant probability derived from career allowance rate.

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