Prosecution Insights
Last updated: October 02, 2026

Examiner: CHEN, KEATH T

Tech Center 1700 • Art Units: 1711 1712 1713 1716 1718 1792

This examiner grants 30% of resolved cases

Analysis

Keath T. Chen is an examiner in Tech Center 1700 and Art Unit 1711 with 1157 resolved cases. The allowance rate is 30.2%, which is quite low and indicates a difficult prosecution environment. The median days to allowance is 1356, reflecting a long path to success. This 1356-day timeline requires significant persistence from applicants. The 30.2% rate suggests that many applications face multiple rejections in Art Unit 1711.

The interview lift is 24.7%. This suggests that interviews are a meaningful way to improve the 30.2% allowance rate. In Tech Center 1700, the 1356-day median pendency is a significant factor for practitioners to manage. The 1157 resolved cases provide a very strong statistical basis for these trends. The 24.7% lift indicates that direct communication is a valuable tactic for overcoming hurdles.

Practitioners should prepare for a challenging process given the 30.2% allowance rate. The 24.7% interview lift is a key tool for overcoming rejections. The 1356-day median to allowance is the expected timeline for those who succeed. Overall, the 1157 cases show that persistence and direct engagement are necessary in Art Unit 1711.

Written from this page's own data; every figure is computed from USPTO records and verified before publication.

Performance Statistics

30.2%
Allow Rate
-34.8% vs TC avg
1,225
Total Applications
+24.7%
Interview Lift
1356
Avg Prosecution Days
Based on 1157 resolved cases, 2023–2026

Rejection Statute Breakdown

0.2%
§101 Eligibility
14.9%
§102 Novelty
57.5%
§103 Obviousness
25.5%
§112 Clarity

Currently Pending Office Actions

App #TitleStatusAssignee
18442548 CHEMICAL LIQUID SUPPLY APPARATUS, AND SUBSTRATE TREATING APPARATUS HAVING THE SAME Final Rejection SAMSUNG ELECTRONICS CO., LTD.
18442991 SUBSTRATE SUPPORT, THIN FILM PROCESSING DEVICE, AND THIN FILM DEPOSITION CONTROL METHOD USING THE SAME Non-Final OA SAMSUNG ELECTRONICS CO., LTD.
18409082 SUBSTRATE PROCESSING APPARATUS Final Rejection Samsung Electronics Co., Ltd.
18696355 EVAPORATION MASK, EVAPORATION DEVICE, AND EVAPORATION METHOD Non-Final OA BOE Technology Group Co., Ltd.
18933462 DEPOSITION MASK AND DEPOSITION EQUIPMENT INCLUDING THE SAME Non-Final OA Samsung Display Co., LTD.
18644599 ELECTROSTATIC CHUCK, ETCHING APPARATUS, AND METHOD OF MANUFACTURING DISPLAY DEVICE Non-Final OA Samsung Display Co., LTD.
18515267 ELECTROSTATIC CHUCK, DEPOSITION APPARATUS INCLUDING THE SAME, AND DISPLAY PANEL FABRICATED USING THE SAME Non-Final OA Samsung Display Co., LTD.
18504026 DEPOSITION APPARATUS Non-Final OA Samsung Display Co., Ltd.
18366820 DEPOSITION SOURCE AND DEPOSITION APPARATUS INCLUDING THE SAME Final Rejection Samsung Display Co., LTD.
17346347 SYSTEMS AND METHODS FOR GRAFTING A MOLECULAR CODE ONTO A MATERIAL BY AN ATMOSPHERIC PLASMA TREATMENT Final Rejection Illinois Tool Works Inc.
18243173 SYSTEM AND APPARATUS FOR A LIFT PIN Non-Final OA ASM IP Holding B.V.
18442808 LOCAL PART MASKING FOR IMPROVED UNIFORMITY IN CERAMIC MATRIX COMPOSITES Final Rejection RTX Corporation
18113846 PLASMA PROCESSING APPARATUS Non-Final OA Hitachi High-Tech Corporation
18476808 NOVEL COATING METHOD OF COMPLEX 3D STRUCTURES USING LOW PRESSURE CHEMICAL VAPOR DEPOSITION Final Rejection California Institute of Technology
18456614 PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Final Rejection Kioxia Corporation
18559485 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD Non-Final OA JUSUNG ENGINEERING CO., LTD.
17792706 SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD Final Rejection JUSUNG ENGINEERING CO., LTD.
18493614 DEPOSITING A CARBON HARDMASK BY HIGH POWER PULSED LOW FREQUENCY RF Final Rejection Lam Research Corporation
18035200 PEDESTAL INCLUDING SEAL Final Rejection LAM RESEARCH CORPORATION
18250349 LOCALIZED PLASMA ARC PREVENTION VIA PURGE RING Non-Final OA Lam Research Corporation
17910139 SUBSTRATE SUPPORTS INCLUDING BONDING LAYERS WITH STUD ARRAYS FOR SUBSTRATE PROCESSING SYSTEMS Non-Final OA LAM RESEARCH CORPORATION
18404542 PLASMA-ASSISTED FILM REMOVAL FOR WAFER FABRICATION Non-Final OA Micron Technology, Inc.
17815318 PLASMA ETCHER EDGE RING WITH A CHAMFER GEOMETRY AND IMPEDANCE DESIGN Non-Final OA Taiwan Semiconductor Manufacturing Company, Ltd.
18672918 INTEGRATED WET PASSIVATION ON CMP FOR HYBRID BONDING POST-CU PAD POLISH CAPPING Non-Final OA Applied Materials, Inc.
18663463 SELECTIVE PERIODIC EDGE DEPOSITION AND ETCH Non-Final OA Applied Materials, Inc.
18627065 PLASMA SHOWERHEAD ASSEMBLY Final Rejection Applied Materials, Inc.
18603672 SEMICONDUCTOR PROCESSING CHAMBER LID AND SEALING MECHANISM Non-Final OA Applied Materials, Inc.
18526788 HARDWARE DESIGN WITH INDEPENDENT CONTROL TO IMPROVE WIW UNIFORMITY Final Rejection Applied Materials, Inc.
18523394 SINGLE WAFER PROCESSING ENVIRONMENTS WITH SPATIAL SEPARATION Non-Final OA Applied Materials, Inc.
18198123 SENSOR FOR MEASUREMENT OF RADICALS Non-Final OA Applied Materials, Inc.

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