Prosecution Insights
Last updated: April 19, 2026
Application No. 18/162,183

JOINT STRUCTURE

Non-Final OA §103
Filed
Jan 31, 2023
Examiner
PIZARRO CRESPO, MARCOS D
Art Unit
2814
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
TDK Corporation
OA Round
1 (Non-Final)
66%
Grant Probability
Favorable
1-2
OA Rounds
3y 8m
To Grant
80%
With Interview

Examiner Intelligence

Grants 66% — above average
66%
Career Allow Rate
358 granted / 546 resolved
-2.4% vs TC avg
Moderate +15% lift
Without
With
+14.8%
Interview Lift
resolved cases with interview
Typical timeline
3y 8m
Avg Prosecution
40 currently pending
Career history
586
Total Applications
across all art units

Statute-Specific Performance

§103
52.4%
+12.4% vs TC avg
§102
27.5%
-12.5% vs TC avg
§112
17.8%
-22.2% vs TC avg
Black line = Tech Center average estimate • Based on career data from 546 resolved cases

Office Action

§103
Attorney’s Docket Number: 223421 Filing Date: 1/31/2023 Claimed Priority Date: 2/2/2022 (JP 2022-014673) Inventors: Kasai et al. Examiner: Marcos D. Pizarro DETAILED ACTION This Office action responds to the amendment filed on 8/22/2025 Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . In the event the determination of the status of the application as subject to AIA is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for a rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. Continued Examination Under 37 CFR 1.114 A request for continued examination (RCE) under 37 CFR 1.114, including the fee set forth in 37 CFR 1.17(e), was filed in this application after the notice of allowance in paper no. 4, mailed on 5/29/2025. Since this application is eligible for continued examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, prosecution in this application has been reopened pursuant to 37 CFR 1.114. Applicant's submission filed on 8/22/2025 has been entered. Amendment Status The amendment filed on 8/22/2025 as an RCE submission in reply to the Office action in paper no. 4 has been entered. The present Office action is made with all the suggested amendments being fully considered. Accordingly, pending in this Office action are claims 1-5. Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. This application currently names joint inventors. In considering patentability of the claims the examiner presumes that the subject matter of the various claims was commonly owned as of the effective filing date of the claimed invention(s) absent any evidence to the contrary. Applicant is advised of the obligation under 37 CFR 1.56 to point out the inventor and effective filing dates of each claim that was not commonly owned as of the effective filing date of the later invention in order for the examiner to consider the applicability of 35 U.S.C. 102(b)(2)(C) for any potential 35 U.S.C. 102(a)(2) prior art against the later invention. Claims 1-3 and 5 are rejected under 35 U.S.C. 103 as being unpatentable over Lin (US 2020/0357971) in view of Tsai (US 2023/0057113) and Tajima (US 2020/0098678). Regarding claim 1, Lin (see, e.g., fig. 7A) shows most aspects of the instant invention including a joint structure in which an electronic component 104 and a wiring substrate 102 are joined to each other, the structure comprising: A first layer 1201 between the component and the substrate A second layer 1202 between the component and the substrate, and A third layer 116 at a joint interface between the first and second layers wherein (see, e.g., par. 0039/ll.4-15): The first layer 1201 is composed of a first metal containing Sn The second layer 1202 is composed of a second metal The third layer 116 is composed of an intermetallic compound of the first and second metals However, Lin does not specify the thickness of the third layer. Tsai teaches that the thickness of the third layer should be controlled to be approximately 5–10% of the thickness of the joint structure in order to improve joint yield and reliability (see, e.g., Tsai: pars. 0031-0033). Tsai, therefore, teaches that the thickness of the third layer is a result-effective variable and provides guidance for selecting an appropriate thickness to achieve improved performance. Tajima discloses that the thickness of the third layer formed during bonding is about 1 micron under the disclosed bonding conditions, and further teaches that the thickness of the third layer is dependent on bonding time and temperature (see, e.g., Tajima: par.0036/ll.22-25). Tajima, therefore, teaches that third-layer thickness is a controllable variable. Tajima does not teach that 1 micron is critical or that thinner layers are undesirable. In view of Tsai’s teaching that controlling the thickness of the third layer improves joint yield and reliability, a person of ordinary skill in the art would have been motivated to adjust the bonding parameters taught by Tajima to obtain a thinner third layer, including thicknesses within the claimed range. It would have been obvious to a person of ordinary skill in the art at the time of the invention to modify the joint structure of Lin to control the thickness of the third layer as taught by Tsai, using the bonding process parameters taught by Tajima, in order to improve joint yield and reliability. A person of ordinary skill in the art would have had a reasonable expectation of success in achieving a desired third-layer thickness by adjusting bonding time and temperature, as taught by Tajima. Selecting a third-layer thickness within the claimed range of 0.1–0.5 microns would have been an obvious matter of routine optimization, as Tsai teaches that third-layer thickness should be controlled relative to joint thickness to obtain improved performance, and Tajima teaches how to control that thickness during bonding. The claimed thickness range therefore represents an obvious optimization of a known result-effective variable. Regarding claim 2, Lin teaches that the second metal 1202 is any metal of Au, Cu, Ni, Ag and Pd or an alloy of at least two selected from Au, Cu, Ni, Ag, and Pd (see, e.g., par.0039/ll.15-16). Regarding claim 3, Lin teaches that the second metal 1202 is a metal containing at least Au (see, e.g., par.0039/ll.15-16). Regarding claim 5, Lin shows that the component 104 is a LED (see, e.g., par.0039/ll.26-27). Claims 1 and 4 are rejected under 35 U.S.C. 103 as being unpatentable over Tsai in view of Tajima. Regarding claim 1, Tsai (see, e.g., fig. 8A and 24) shows most aspects of the instant invention including a joint structure in which an electronic component 106 and a wiring substrate 402 are joined to each other, the structure comprising: A first layer 122 between the component and the substrate A second layer 120 between the component and the substrate, and A third layer IMC2 at a joint interface between the first and second layers wherein: The first layer 122 is composed of a first metal containing Sn (see, e.g., par.0028/l.9) The second layer 120 is composed of a second metal The third layer IMC2 is composed of an intermetallic compound of the first and second metals (see, e.g., par.0030/ll.10-12) However, Tsai does not specify the thickness of the third layer. Regarding claim 1, see also the comments stated above in paragraphs 9 and 10, which are considered to be repeated here. It would have been obvious to a person of ordinary skill in the art at the time of the invention to control the thickness of the third layer of Tsai, using the bonding process parameters taught by Tajima, in order to improve joint yield and reliability. A person of ordinary skill in the art would have had a reasonable expectation of success in achieving a desired third-layer thickness by adjusting bonding time and temperature, as taught by Tajima. Selecting a third-layer thickness within the claimed range of 0.1–0.5 microns would have been an obvious matter of routine optimization, as Tsai teaches that third-layer thickness should be controlled relative to joint thickness to obtain improved performance, and Tajima teaches how to control that thickness during bonding. The claimed thickness range therefore represents an obvious optimization of a known result-effective variable. Regarding claim 4, Tsai teaches that the third layer IMC2 containing AuSn4 (see, e.g., par.0057/l.18). Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to Marcos D. Pizarro at (571) 272-1716 and between the hours of 9:00 AM to 7:00 PM (Eastern Standard Time) Monday through Thursday or by e-mail via Marcos.Pizarro@uspto.gov. If attempts to reach the examiner by telephone are unsuccessful, the examiner's supervisor, Wael Fahmy, can be reached on (571) 272-1705. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (in USA or Canada) or 571-272-1000. /Marcos D. Pizarro/Primary Examiner, Art Unit 2814 MDP/mdp January 16, 2026
Read full office action

Prosecution Timeline

Jan 31, 2023
Application Filed
Jun 18, 2025
Applicant Interview (Telephonic)
Jun 18, 2025
Examiner Interview Summary
Aug 22, 2025
Request for Continued Examination
Aug 25, 2025
Response after Non-Final Action
Jan 16, 2026
Non-Final Rejection — §103 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
66%
Grant Probability
80%
With Interview (+14.8%)
3y 8m
Median Time to Grant
Low
PTA Risk
Based on 546 resolved cases by this examiner. Grant probability derived from career allow rate.

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