DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Claim Rejections - 35 USC § 112
The following is a quotation of the first paragraph of 35 U.S.C. 112(a):
(a) IN GENERAL.—The specification shall contain a written description of the invention, and of the manner and process of making and using it, in such full, clear, concise, and exact terms as to enable any person skilled in the art to which it pertains, or with which it is most nearly connected, to make and use the same, and shall set forth the best mode contemplated by the inventor or joint inventor of carrying out the invention.
The following is a quotation of the first paragraph of pre-AIA 35 U.S.C. 112:
The specification shall contain a written description of the invention, and of the manner and process of making and using it, in such full, clear, concise, and exact terms as to enable any person skilled in the art to which it pertains, or with which it is most nearly connected, to make and use the same, and shall set forth the best mode contemplated by the inventor of carrying out his invention.
Claims 1-6 are rejected under 35 U.S.C. 112(a) or 35 U.S.C. 112 (pre-AIA ), first paragraph, as failing to comply with the written description requirement. The claim(s) contains subject matter which was not described in the specification in such a way as to reasonably convey to one skilled in the relevant art that the inventor or a joint inventor, or for applications subject to pre-AIA 35 U.S.C. 112, the inventor(s), at the time the application was filed, had possession of the claimed invention.
Re claim 1, the phrase “a side surface of the third semiconductor layer facing a side surface of the first semiconductor layer via the second semiconductor layer, a distance between the side surface of the third semiconductor layer and the side surface of the first semiconductor layer in a normal direction of the side surface of the first semiconductor layer decreasing, and not increasing, as approaching the first insulating film upward” was not described in the original specification. Note: see below figure shown in red (at least the distance of this region is increasing, NOT decreasing).
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The following is a quotation of 35 U.S.C. 112(b):
(b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention.
The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph:
The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention.
Claims 1-6 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention.
Re claim 1, the phrase “a side surface of the third semiconductor layer facing a side surface of the first semiconductor layer via the second semiconductor layer, a distance between the side surface of the third semiconductor layer and the side surface of the first semiconductor layer in a normal direction of the side surface of the first semiconductor layer decreasing, and not increasing, as approaching the first insulating film upward” is unclear and indefinite since at least the phrase “the first insulating film” lacks antecedent basis.
Re claim 1, line 20, the phrase “the third electrode facing the portion via a first insulating film” is unclear and indefinite (e.g., is this the same as the one recited line 15 or different?).
Claim Rejections - 35 USC § 102
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.
(a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention.
Claims 1-6 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by IIJIMA, US Pub. No. 2013/0248871 A1.
Due to the 112 issues, the instant claims are interpreted as following: Re claim 1. IIJIMA discloses a semiconductor device, comprising: a first electrode D2 (e.g., fig. 1A); a first semiconductor layer 40/12/10 (fig. 1A) connected to the first electrode, the first semiconductor layer 10 (e.g., fig. 1B) being of a first conductivity type and including silicon and carbon (e.g., SiC); a second semiconductor layer 20 (fig. 1A, 1B) located on a portion of the first semiconductor layer, the second semiconductor layer 20 being of a second conductivity type and including silicon and carbon (e.g, SiC) ; a third semiconductor layer 30 (e.g., figs. 1A & 1B) located on a portion of the second semiconductor layer 20, a side surface of the third semiconductor layer 30 facing a side surface of the first semiconductor layer 10 via the second semiconductor layer 20 (e.g., fig. 1A&1B), a distance between the side surface of the third semiconductor layer 30 and the side surface of the first semiconductor layer 10 (e.g., fig. 1B) in a normal direction of the side surface of the first semiconductor layer decreasing (e.g. from left to right, see below figure more details), and not increasing (e.g., figs. 1A & 1B), the third semiconductor layer being of a first conductivity type and including silicon and carbon (e.g., SiC); a second electrode D1 (e.g., fig. 1A) connected to the third semiconductor layer; and a third electrode G (e.g., figs. 1A&1B) located in a region directly above at least a portion of the second semiconductor layer between the first semiconductor layer and the third semiconductor layer, the third electrode G facing the portion via a first insulating film 60 (e.g., figs. 1A & 1B), see figs. 1A-15 and pages 1-7 for more details.
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Re claim 2. The device according to claim 1, wherein a cross-sectional shape of the side surface of the third semiconductor layer 30 (fig. 1B) is a shape along a virtual circular arc having a center positioned above the third semiconductor layer (fig. 1B).
Re claim 3. The device according to claim 1, wherein a distance between an upper edge and a lower edge of the side surface when viewed from above (e.g., fig. 1B) is greater than a thickness of the third semiconductor layer when viewed laterally (e.g., fig. 1B).
Re claim 4. The device according to claim 1, wherein the third electrode G (fig. 1A) is located, with the first insulating film 60 interposed, on a portion of the first semiconductor layer where the second semiconductor layer is not located (fig. 1A & 1B) and on a portion of the third semiconductor layer at the second semiconductor layer side (fig. 1A & 1B).
Re claim 5. The device according to claim 1, wherein the second electrode D1 contacts the third semiconductor layer 30 (fig. 1A), and the second electrode D1 covers the third electrode G via a second insulating film (fig. 1A).
Re claim 6. The device according to claim 1, wherein the first semiconductor layer 40 is located on the first electrode D2 and contacts the first electrode (fig. 1A).
Response to Arguments
Applicant's arguments filed 1/28/2026 have been fully considered but they are not persuasive for reasons herein above.
Conclusion
Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a).
A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action.
Any inquiry concerning this communication or earlier communications from the examiner should be directed to JACK CHEN whose telephone number is (571)272-1689. The examiner can normally be reached Monday to Friday, 8am to 4pm.
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If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Yara J. Green can be reached at (571)270-3035. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
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/JACK S CHEN/Primary Examiner, Art Unit 2893
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