Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2893
This examiner grants 77% of resolved cases
Jack S. J. Chen, an examiner in Tech Center 2800, has overseen 576 resolved cases with an allowance rate of 76.7%. This rate in Art Unit 2893 indicates a high likelihood of success for patent applicants. The median time to allowance is 1077 days, providing a predictable timeframe for the prosecution process. Practitioners can use the 1077-day figure to plan their strategy and manage resources effectively over the course of the application's life.
The interview lift of 5.6% provides a measurable increase over the 76.7% base allowance rate. This suggests that while the examiner is already likely to allow a case, an interview can still provide a useful advantage. The 576 resolved cases offer a substantial foundation for these metrics, reinforcing the reliability of the 76.7% allowance rate. The 5.6% lift is a valuable tool for practitioners to consider when navigating the 1077-day median pendency in Tech Center 2800.
For those working in Art Unit 2893, the 76.7% allowance rate and the 1077-day median time to allowance point toward a steady prosecution path. The 576 resolved cases reflect a consistent approach by Examiner Chen. By utilizing the 5.6% interview lift, applicants can further improve their chances of success within the 1077-day window.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18054970 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL LAYER DEFINING AIR-GAP, AND SEMICONDUCTOR DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18463755 | SEMICONDUCTOR DEVICE | Non-Final OA | Toshiba Electronic Devices & Storage Corporation |
| 18466180 | VERTICAL GAN POWER TRANSISTOR UNIT CELL, VERTICAL GAN POWER TRANSISTOR AND METHOD FOR PRODUCING A VERTICAL GAN POWER TRANSISTOR UNIT CELL | Non-Final OA | Robert Bosch GmbH |
| 17919730 | ORGANIC SPACER FOR INTEGRATED CIRCUITS | Final Rejection | Intel NDTM US LLC |
| 17897688 | IC FABRICATION FLOW WITH CONTINUOUS DYNAMIC SAMPLING FOR AUTO-VISUAL INSPECTION | Non-Final OA | TEXAS INSTRUMENTS INCORPORATED |
| 18324897 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND CORRESPONDING SEMICONDUCTOR DEVICE | Non-Final OA | STMICROELECTRONICS S.r.l. |
| 17941788 | SIC-BASED ELECTRONIC DEVICE WITH ENHANCED ROBUSTNESS, AND METHOD FOR MANUFACTURING THE ELECTRONIC DEVICE | Non-Final OA | STMICROELECTRONICS S.r.l. |
| 17592322 | VERTICAL CONDUCTION ELECTRONIC DEVICE COMPRISING A JBS DIODE AND MANUFACTURING PROCESS THEREOF | Final Rejection | STMicroelectronics S.r.l. |
| 18321239 | FERROELECTRIC MEMORY DEVICE WITH SEMICONDUCTOR LAYER | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18316439 | THIN FILM TRANSISTOR STRUCTURE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17808917 | DEPOSITION METHOD FOR FABRICATING SEMICONDUCTOR DEVICE STRUCTURE | Non-Final OA | NANYA TECHNOLOGY CORPORATION |
| 17951438 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING SYSTEM, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM | Non-Final OA | Kokusai Electric Corporation |
| 18093343 | GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING SELF-ALIGNED TRENCH SHIELDING REGIONS AND RELATED METHODS | Non-Final OA | Wolfspeed, Inc. |
| 18613763 | THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED WORD LINE CONTACT VIA STRUCTURES AND METHOD OF MAKING THE SAME | Non-Final OA | SANDISK TECHNOLOGIES LLC |
| 18798016 | WIRING BOARD AND SEMICONDUCTOR DEVICE | Non-Final OA | SHINKO ELECTRIC INDUSTRIES CO., LTD. |
| 17521076 | TRANSISTOR WITH FACETED, RAISED SOURCE/DRAIN REGION | Non-Final OA | GLOBALFOUNDRIES U.S. Inc. |
| 18222411 | GaN TRENCH MOSFET AND FABRICATION METHOD | Non-Final OA | SixPoint Materials, Inc. |
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