Prosecution Insights
Last updated: July 17, 2026
Application No. 18/187,995

ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME

Final Rejection §102§103
Filed
Mar 22, 2023
Priority
Apr 24, 2022 — CN 202210456046.9
Examiner
TRAN, TONY
Art Unit
2893
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Innolux Corporation
OA Round
2 (Final)
70%
Grant Probability
Favorable
3-4
OA Rounds
0m
Est. Remaining
99%
With Interview

Examiner Intelligence

Grants 70% — above average
70%
Career Allowance Rate
608 granted / 863 resolved
+2.5% vs TC avg
Strong +34% interview lift
Without
With
+33.8%
Interview Lift
resolved cases with interview
Typical timeline
2y 9m
Avg Prosecution
47 currently pending
Career history
922
Total Applications
across all art units

Statute-Specific Performance

§101
0.2%
-39.8% vs TC avg
§103
82.9%
+42.9% vs TC avg
§102
16.1%
-23.9% vs TC avg
§112
0.5%
-39.5% vs TC avg
Black line = Tech Center average estimate • Based on career data from 863 resolved cases

Office Action

§102 §103
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claim(s) 1, 3-7, 9-13 and 15 is/are rejected under 35 U.S.C. 102(a)(2) as being anticipated by Jeong (Pub. No.: US 2025/0048853). PNG media_image1.png 686 1032 media_image1.png Greyscale Re claim 1, Jeong FIG. 4 [as shown above] teaches an electronic device, comprising: a substrate (101); a first gate line (G1) disposed on the substrate; a first insulating layer (113) disposed on the first gate line; a second insulating layer (114) disposed on the first insulating layer; an oxide semiconductor layer (material of AO4) disposed between the first insulating layer and the second insulating layer; a second gate line (G4) disposed on the second insulating layer (114); a third insulating layer (116) disposed on the second gate line; a first conductive element [CE] disposed on the third insulating layer; a driving circuit (T1); and a connection line (CL3); wherein the first conductive element [CE] is electrically connected to the first gate line (G1) by passing through the first insulating layer (113), the second insulating layer (114) and the third insulating layer (116) and is electrically connected to the second gate line (G4) by passing through the third insulating layer; wherein the connection line (CL3) is electrically connected to the driving circuit (T1) and the first conductive element [CE], wherein the substrate comprises an active region (A04) and a peripheral region [PR] adjacent to the active region [AR], the driving circuit (T1) is disposed in the peripheral region, and the oxide semiconductor layer (material of A04) is disposed in the active region [AR]. Re claim 3, Jeong FIG. 4 teaches the electronic device as claimed in claim 1, wherein the first insulating layer has a first opening (occupied by contact hole 14 surrounded by 113, [0109]), the second insulating layer has a second opening (occupied by contact hole 14 surrounded by 114), the third insulating layer has a third opening (occupied by contact hole 14 surrounded by 116), in a cross-sectional view of the electronic device, the third opening overlaps the first opening and the second opening, and the first conductive element (CL3) is electrically connected to the first gate line (G1) through the first opening, the second opening and the third opening. Re claim 4, Jeong FIG. 4 teaches the electronic device as claimed in claim 3, wherein there is more than one first opening (occupied by contact hole 11 surrounded by 113), there is more than one second opening (occupied by contact hole 11 surrounded by 114), and there is more than one third opening (occupied by contact hole 11 surrounded by 116). Re claim 5, Jeong FIG. 4 teaches the electronic device as claimed in claim 1, wherein the third insulating layer has a fourth opening (13), and the first conductive element [CE] is electrically connected to the second gate line (G4) through the fourth opening. Re claim 6, Jeong FIG. 4 teaches the electronic device as claimed in claim 5, wherein there is more than one fourth opening (12/13). Re claim 7, Jeong FIG. 4 teaches the electronic device as claimed in claim 1, wherein the oxide semiconductor layer comprises indium gallium zinc oxide (IGZO) [0134]. Re claim 9, Jeong FIG. 4 teaches the electronic device as claimed in claim 1, wherein the connection line (said copper material of CL3, [0144]) has a conductivity greater than that of the first gate line or the second gate line (said titanium material of gate electrodes, [0126]). Re claim 10, Jeong FIG. 4 teaches the electronic device as claimed in claim 1, wherein, in a top view of the electronic device, the connection line (vertical width of CL3) has a width larger than that of the first gate line (vertical width of G1) or the second gate line (vertical width of G4). Re claim 11, Jeong FIG. 4 teaches the electronic device as claimed in claim 1, wherein, in a cross-sectional view of the electronic device, the connection line (vertical width of CL3) has a thickness larger than that of the first gate line (vertical width of G1) or the second gate line (vertical width of G3). Re claim 12, Jeong FIG. 4 teaches the electronic device as claimed in claim 1, wherein the driving circuit comprises a gate on panel (GOP) (G4 on 113). Re claim 13, Jeong FIG. 4 teaches the electronic device as claimed in claim 1, wherein the driving circuit (T1) comprises a transistor having a semiconductor layer (material of AO4). Re claim 15, Jeong FIG. 4 teaches the electronic device as claimed in claim 1, wherein the connection line (CL3) is disposed above the second gate line (G4). Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 14 is/are rejected under 35 U.S.C. 103 as being unpatentable over Jeong in view of BANG (Pub. No.: US 2025/0098459). Jeong teaches all the limitation of claim 8. Jeong fails to teach the limitation of claim 14. BANG teaches wherein the semiconductor layer comprises low-temperature polycrystalline silicon (LTPS) [0228]. It would have been obvious for a person of ordinary skill in the art before the effective filing date of the claim invention to include the above said teaching for the purpose of improving the turn-on characteristic as taught by BANG, [0228]. Response to Arguments Applicant's arguments with respect to claims 1-7 and 9-15 on the remarks filed on 05/21/2026have been considered but are moot in view of the new ground(s) of rejection (due to a new matching elements). Conclusion Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to TONY TRAN whose telephone number is (571)270-1749. The examiner can normally be reached Monday-Friday, 8AM-5PM, EST. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Britt Hanley can be reached at 571-270-3042. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /TONY TRAN/Primary Examiner, Art Unit 2893
Read full office action

Prosecution Timeline

Mar 22, 2023
Application Filed
Feb 26, 2026
Non-Final Rejection mailed — §102, §103
May 16, 2026
Response Filed
Jun 23, 2026
Final Rejection mailed — §102, §103 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
70%
Grant Probability
99%
With Interview (+33.8%)
2y 9m (~0m remaining)
Median Time to Grant
Moderate
PTA Risk
Based on 863 resolved cases by this examiner. Grant probability derived from career allowance rate.

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