Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2811 2821 2893 2894
This examiner grants 70% of resolved cases
Tony Tran operates within Tech Center 2800 and Art Unit 2811. The examiner has overseen 878 resolved cases. The allowance rate is 70.5 percent, which indicates the frequency of grants. These 878 resolved cases provide the historical context for the examiner's work. This volume of resolved cases forms the basis for the current metrics.
The interview lift is 33.5 percent, which shows the difference in allowance probability after a discussion. The median days to allowance is 1014, representing the time required for successful prosecution. In Art Unit 2811, these statistics offer a perspective on the examiner's past decisions.
Practitioners should note the 33.5 percent interview lift as a factor in their strategy. The 70.5 percent allowance rate and the 1014 median days to allowance are useful for planning. Data from Tech Center 2800 helps in understanding the prosecution timeline for applications in this field.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18014012 | DISPLAY DEVICE USING MICRO LED | Final Rejection | LG ELECTRONICS INC. |
| 18372885 | THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME | Final Rejection | Samsung Electronics Co., Ltd. |
| 17646977 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18675459 | DISPLAY DEVICE AND METHOD OF PROVIDING THE SAME | Non-Final OA | Samsung Display Co., Ltd. |
| 17784455 | DISPLAY DEVICE AND VIDEO WALL DISPLAY SYSTEM INCLUDING SAME | Final Rejection | SAMSUNG DISPLAY CO., LTD. |
| 17685305 | DISPLAY DEVICE | Non-Final OA | Samsung Display Co., LTD. |
| 17423321 | DISPLAY DEVICE | Non-Final OA | Samsung Display Co., LTD. |
| 17985672 | DISPLAY DEVICE | Final Rejection | LG Display Co., Ltd. |
| 18187995 | ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME | Non-Final OA | InnoLux Corporation |
| 17849188 | EPITAXIAL SOURCE OR DRAIN STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION | Non-Final OA | Intel Corporation |
| 18401082 | EMBEDDED CHIPLETS WITH BACKSIDE POWER DELIVERY NETWORK | Non-Final OA | ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC. |
| 18089927 | THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME | Non-Final OA | Yangtze Memory Technologies Co., Ltd. |
| 18308734 | TRANSISTOR HAVING WRAP-AROUND SOURCE/DRAIN CONTACTS | Non-Final OA | International Business Machines Corporation |
| 18080828 | TRANSISTORS WITH DIELECTRIC STACK ISOLATING BACKSIDE POWER RAIL | Non-Final OA | International Business Machines Corporation |
| 18074551 | ACTIVE MATRIX SUBSTRATE AND METHOD FOR MANUFACTURING SAME | Final Rejection | Sharp Display Technology Corporation |
| 18746954 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | SK hynix Inc. |
| 18432491 | THREE-DIMENSIONAL SEMICONDUCTOR DEVICE HAVING A SUPPORT PATTERN IN CONTACT WITH A SIDE SURFACE OF A CONTACT PLUG | Non-Final OA | SK hynix Inc. |
| 18530418 | SEMICONDUCTOR MEMORY DEVICE | Final Rejection | KIOXIA CORPORATION |
| 18648334 | ELECTRODE CONNECTION ELEMENT, LIGHT-EMITTING DEVICE COMPRISING SAME, AND METHOD FOR PRODUCING LIGHT-EMITTING DEVICE | Final Rejection | JUSUNG ENGINEERING CO., LTD. |
| 18258973 | MOLYBDENUM DEPOSITION IN FEATURES | Final Rejection | Lam Research Corporation |
| 17999255 | LOW RESISTIVITY CONTACTS AND INTERCONNECTS | Final Rejection | Lam Research Corporation |
| 18648232 | METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED ELECTRONIC SYSTEMS | Non-Final OA | Micron Technology, Inc. |
| 18397967 | METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS | Final Rejection | Micron Technology, Inc. |
| 17823472 | METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS | Non-Final OA | Micron Technology, Inc. |
| 17893718 | FOLDED STAIRCASE VIA ROUTING FOR MEMORY | Final Rejection | Micron Technology, Inc. |
| 18397398 | REDUCTION OF METAL LOSS DURING GATE PATTERNING | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18150617 | SEMICONDUCTOR DEVICE HAVING LOW DIELECTRIC CAPACITANCE AND GOOD ELECTRICAL BREAKDOWN PERFORMANCE, AND METHOD FOR MANUFACTURING THE SAME | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18093472 | LOW RESISTANCE BOTTOM ELECTRODE VIA | Non-Final OA | Taiwan Semiconductor Manufacturing Company |
| 18300280 | METHODS FOR FORMING MULTI-TIER TUNGSTEN FEATURES | Final Rejection | Applied Materials, Inc. |
| 18763037 | VERTICAL MEMORY STUCTURE WITH AIR GAPS AND METHOD FOR PREPARING THE SAME | Final Rejection | NANYA TECHNOLOGY CORPORATION |
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