Prosecution Insights
Last updated: April 19, 2026
Application No. 18/192,653

DISPLAY PANEL

Non-Final OA §102§103§112
Filed
Mar 30, 2023
Examiner
DEGRASSE, IAN ISAAC
Art Unit
2818
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Guangzhou China Star Optoelectronics Semiconductor Display Technology Co. Ltd.
OA Round
3 (Non-Final)
83%
Grant Probability
Favorable
3-4
OA Rounds
3y 5m
To Grant
61%
With Interview

Examiner Intelligence

Grants 83% — above average
83%
Career Allow Rate
10 granted / 12 resolved
+15.3% vs TC avg
Minimal -22% lift
Without
With
+-22.2%
Interview Lift
resolved cases with interview
Typical timeline
3y 5m
Avg Prosecution
54 currently pending
Career history
66
Total Applications
across all art units

Statute-Specific Performance

§103
51.7%
+11.7% vs TC avg
§102
34.8%
-5.2% vs TC avg
§112
13.5%
-26.5% vs TC avg
Black line = Tech Center average estimate • Based on career data from 12 resolved cases

Office Action

§102 §103 §112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Continued Examination Under 37 CFR 1.114 A request for continued examination under 37 CFR 1.114, including the fee set forth in 37 CFR 1.17(e), was filed in this application after final rejection. Since this application is eligible for continued examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, the finality of the previous Office action has been withdrawn pursuant to 37 CFR 1.114. Applicant's submission filed on December 31, 2025 has been entered. Claim Objections Claims 7 and 15 are objected to because of the following informalities: claims 7 and 15 depend from claims 1 and 11 (NOT claims 6 and 14), respectively, and recite the phrase “the at least two sub-channel portions” which therefore lacks antecedent basis. Either the antecedent basis issue needs to be corrected or the claim dependency needs to be corrected to provide such antecedent basis. Claim Rejections - 35 USC § 112 Claims 9 and 17 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Specifically, claims 9 and 17 recite the phrase “the auxiliary electrode” but claims 1 and 11 recite “wherein at least one auxiliary electrode is plural.” Therefore, referring to ‘the auxiliary electrode’ in claims 9 and 17 renders those claims indefinite as it improperly broadens the limitation from claims 1 and 11. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1, 6-7, 9-11, 14-15 and 17-18 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by US 2008/0135846 A1 to Shi et al. (hereinafter “Shin” – newly cited reference from IDS). Regarding claim 1, Shin discloses a display panel, comprising an electrostatic protection circuit (display device having ESD protection circuit 100; abstract; Fig. 3; paragraphs [0003], [0040]), wherein the electrostatic protection circuit comprises a thin film transistor that comprises an active layer (ESD protection circuit 100 comprising protection TFT 110 having active region with semiconductor layers; abstract; Fig. 3; paragraphs [0012], [0040]) comprising: a channel portion; and at least one auxiliary electrode contacting the channel portion directly (channel region having plurality of floating electrodes 74 disposed therein; Fig. 3; paragraph [0049]); wherein at least one auxiliary electrode is plural, the auxiliary electrodes are disposed on the channel portion, and the auxiliary electrodes are distributed at intervals along a channel length direction (channel region having plurality of floating electrodes 74 disposed at intervals therein; Fig. 3; paragraph [0049]); wherein the thin film transistor further comprises a source electrode and a drain electrode, and the auxiliary electrodes, the source electrode, and the drain electrode are disposed in a same layer (TFT 110 having source 61, drain 71, and electrodes 74 disposed in the same horizontal plane; Fig. 3; paragraph [0049]), the auxiliary electrodes are distributed at the intervals between the source electrode and the drain electrode, one of the auxiliary electrodes closest to the source electrode is spaced from the source electrode, and one of the auxiliary electrodes closest to the drain electrode is spaced from the drain electrode (electrodes 74 spaced from the source 61 and drain 71 and disposed at intervals therebetween; Fig. 3; paragraph [0049]). Regarding claim 6, Shin discloses the display panel according to claim 1, wherein the channel portion comprises at least two sub-channel portions, and the sub-channel portions are disposed at intervals along a channel width direction (channel region comprises at least two sub-regions disposed between electrodes 74 along channel region width direction; Fig. 3). Regarding claim 7, as best understood, Shin discloses the display panel according to claim 1, wherein adjacent two of the at least two sub-channel portions are parallel to each other or disposed symmetrically (channel region comprises at least two sub-regions disposed parallel relative one another and symmetrically between electrodes 74 along channel region width direction; Fig. 3). Regarding claim 9, as best understood, Shin discloses the display panel according to claim 1, wherein the thin film transistor comprises a gate electrode, and the auxiliary electrode is disposed on a surface of the active layer near or away from the gate electrode (TFT 110 comprises gate electrode 21 with electrodes 74 disposed within active region away from gate electrode 21; Fig. 3). Regarding claim 10, Shin discloses the display panel according to claim 1, wherein material of the active layer is oxide semiconductor or silicon semiconductor (semiconductor layers may be made from amorphous silicon; paragraph [0071]). Regarding claim 11, Shin discloses a display panel, comprising an electrostatic protection circuit (display device having ESD protection circuit 100; abstract; Fig. 3; paragraphs [0003], [0040]), wherein the electrostatic protection circuit comprises a thin film transistor that comprises an active layer (ESD protection circuit 100 comprising protection TFT 110 having active region with semiconductor layers; abstract; Fig. 3; paragraphs [0012], [0040]) comprising: a channel portion; and at least one auxiliary electrode contacting the channel portion directly (channel region having plurality of floating electrodes 74 disposed therein; Fig. 3; paragraph [0049]); wherein at least one auxiliary electrode is plural, the auxiliary electrodes are disposed on the channel portion, and the auxiliary electrodes are distributed at intervals along a channel length direction (channel region having plurality of floating electrodes 74 disposed at intervals therein; Fig. 3; paragraph [0049]); wherein the channel portion is at least partially bending (channel region bent downwardly on either end; Fig. 3); wherein the thin film transistor further comprises a source electrode and a drain electrode, and the auxiliary electrodes, the source electrode, and the drain electrode are disposed in a same layer (TFT 110 having source 61, drain 71, and electrodes 74 disposed in the same horizontal plane; Fig. 3; paragraph [0049]), the auxiliary electrodes are distributed at the intervals between the source electrode and the drain electrode, one of the auxiliary electrodes closest to the source electrode is spaced from the source electrode, and one of the auxiliary electrodes closest to the drain electrode is spaced from the drain electrode (electrodes 74 spaced from the source 61 and drain 71 and disposed at intervals therebetween; Fig. 3; paragraph [0049]). Regarding claim 14, Shin discloses the display panel according to claim 11, wherein the channel portion comprises at least two sub-channel portions, and the sub-channel portions are disposed at intervals along a channel width direction (channel region comprises at least two sub-regions disposed between electrodes 74 along channel region width direction; Fig. 3). Regarding claim 15, as best understood, Shin discloses the display panel according to claim 11, wherein adjacent two of the sub-channel portions are parallel to each other or disposed symmetrically (channel region comprises at least two sub-regions disposed parallel relative one another and symmetrically between electrodes 74 along channel region width direction; Fig. 3). Regarding claim 17, Shin discloses the display panel according to claim 11, wherein the thin film transistor comprises a gate electrode, and the auxiliary electrode is disposed on a surface of the active layer near or away from the gate electrode (TFT 110 comprises gate electrode 21 with electrodes 74 disposed within active region away from gate electrode 21; Fig. 3). Regarding claim 18, Shin discloses the display panel according to claim 11, wherein material of the active layer is oxide semiconductor or silicon semiconductor (semiconductor layers may be made from amorphous silicon; paragraph [0071]). Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 4-5 and 12-13 are rejected under 35 U.S.C. 103 as being unpatentable over Shin in further view of US 2021/0358968 A1 to Xu (hereinafter “Xu” – previously cited reference). Regarding claim 4, Shin discloses the display panel of claim 1. Shin fails to disclose wherein the channel portion comprises a plurality of bending sections, and bending directions of adjacent two of the bending sections are different. However, Xu discloses wherein the channel portion comprises a plurality of bending sections, and bending directions of adjacent two of the bending sections are different (active layer comprises terminal ends that are bent downwardly in opposite directions; Fig. 2B). Shin and Xu are both considered to be analogous to the claimed invention because they are in the same field of display device technology. Therefore, it would have been obvious to a person having ordinary skill in the art before the effective filing date of the claimed invention to have modified Shin to incorporate the teaching of Xu in order to potentially provide increased surface area for charge dissipation, improved field distribution, higher current capacity, and reduced resistance. Regarding claim 5, Shin in view of Xu discloses the display panel of claim 4. Shin fails to disclose wherein each of the at least one auxiliary electrode is disposed on each of the bending sections. However, Xu discloses wherein each of the at least one auxiliary electrode is disposed on each of the bending sections (auxiliary electrodes 271 disposed above bent terminal ends of active layer; Fig. 2B). Shin and Xu are both considered to be analogous to the claimed invention because they are in the same field of display device technology. Therefore, it would have been obvious to a person having ordinary skill in the art before the effective filing date of the claimed invention to have modified Shin to incorporate the teaching of Xu in order to potentially provide increased surface area for charge dissipation, improved field distribution, higher current capacity, and reduced resistance. Regarding claim 12, Shin discloses the display panel of claim 11. Shin fails to disclose wherein the channel portion comprises a plurality of bending sections, and bending directions of adjacent two of the bending sections are different. However, Xu discloses wherein the channel portion comprises a plurality of bending sections, and bending directions of adjacent two of the bending sections are different (active layer comprises terminal ends that are bent downwardly in opposite directions; Fig. 2B). Shin and Xu are both considered to be analogous to the claimed invention because they are in the same field of display device technology. Therefore, it would have been obvious to a person having ordinary skill in the art before the effective filing date of the claimed invention to have modified Shin to incorporate the teaching of Xu in order to potentially provide increased surface area for charge dissipation, improved field distribution, higher current capacity, and reduced resistance. Regarding claim 13, Shin in view of Xu discloses the display panel of claim 12. Shin fails to disclose wherein each of the at least one auxiliary electrode is disposed on each of the bending sections. However, Xu discloses wherein each of the at least one auxiliary electrode is disposed on each of the bending sections (auxiliary electrodes 271 disposed above bent terminal ends of active layer; Fig. 2B). Shin and Xu are both considered to be analogous to the claimed invention because they are in the same field of display device technology. Therefore, it would have been obvious to a person having ordinary skill in the art before the effective filing date of the claimed invention to have modified Shin to incorporate the teaching of Xu in order to potentially provide increased surface area for charge dissipation, improved field distribution, higher current capacity, and reduced resistance. Response to Arguments Applicant's arguments filed December 31, 2025 have been fully considered. Applicant amends claims 1 and 11 and submits corresponding arguments that these amended claims overcome the previous 35 USC 103 rejection using Shi in view Xu. Examiner agrees. However, after additional search, amended claims 1 and 11 and their dependent claims are being rejected on new grounds in view of the Shin reference provided in the IDS filed November 12, 2025. Further, Applicant attempted to correct the claim objection to claims 7 and 15 but did not address the underlying issue. Specifically, claims 7 and 15 are NOT dependent upon claims 6 and 14 as it appears Applicant assumes, but rather depend from claims 1 and 11. Therefore, Applicant must introduce “the at least two sub-portions” as “at least two sub-portions” to avoid antecedent basis issues OR change the dependencies to depend from claims 6 and 14 as it appears Applicant intended. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to IAN DEGRASSE whose telephone number is (571) 272-0261. The examiner can normally be reached Monday through Friday 8:30a until 5:00p. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, JEFF NATALINI can be reached on (571) 272-2266. The fax phone number for the organization where this application or proceeding is assigned is (571) 273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /IAN DEGRASSE/Examiner, Art Unit 2818 /JEFF W NATALINI/Supervisory Patent Examiner, Art Unit 2818
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Prosecution Timeline

Mar 30, 2023
Application Filed
Jul 29, 2025
Non-Final Rejection — §102, §103, §112
Sep 15, 2025
Response Filed
Sep 30, 2025
Final Rejection — §102, §103, §112
Dec 31, 2025
Request for Continued Examination
Jan 21, 2026
Response after Non-Final Action
Mar 02, 2026
Non-Final Rejection — §102, §103, §112 (current)

Precedent Cases

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
83%
Grant Probability
61%
With Interview (-22.2%)
3y 5m
Median Time to Grant
High
PTA Risk
Based on 12 resolved cases by this examiner. Grant probability derived from career allow rate.

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