Prosecution Insights
Last updated: May 29, 2026
Application No. 18/195,317

MEMS Device and Fabrication Process with Reduced Z-Axis Stiction

Final Rejection §112
Filed
May 09, 2023
Examiner
HOSSAIN, MOAZZAM
Art Unit
2898
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
STMicroelectronics
OA Round
2 (Final)
88%
Grant Probability
Favorable
3-4
OA Rounds
0m
Est. Remaining
99%
With Interview

Examiner Intelligence

Grants 88% — above average
88%
Career Allowance Rate
712 granted / 811 resolved
+19.8% vs TC avg
Moderate +11% lift
Without
With
+11.0%
Interview Lift
resolved cases with interview
Typical timeline
2y 4m
Avg Prosecution
37 currently pending
Career history
852
Total Applications
across all art units

Statute-Specific Performance

§101
1.0%
-39.0% vs TC avg
§103
69.7%
+29.7% vs TC avg
§102
12.5%
-27.5% vs TC avg
§112
15.9%
-24.1% vs TC avg
Black line = Tech Center average estimate • Based on career data from 811 resolved cases

Office Action

§112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Status of Claims Applicant’s amendment of claims 1 and 18, cancellation of claims 9-17 and submission of new claims 21-29 in “Claims - 04/06/2026” is acknowledged. But, new claim 21 ( and its dependent claims 22-29), comprising the process steps such as “a first sensing gap surface of the first MEMS inertial transducer element, exposed via a structural release etch process; a second gap surface of the first semiconductor electrode, exposed via the structural release etch process; a rough topography of one or both of the first sensing gap of the first MEMS inertial transducer element and the second sensing gap surface of the first semiconductor electrode formed through a surface abrasion etch process; and a first cap wafer attached to the MEMS wafer structure through a first bonding process. Those are implied steps of withdrawn group II in “Response to Election / Restriction Filed - 11/12/2025” and cancelled in “Claims - 04/06/2026”. Since applicant has received an action on the merits for the originally presented invention, this invention has been constructively elected by original presentation for prosecution on the merits. Accordingly, claims 21-29 are withdrawn from consideration as being directed to a non-elected invention. See 37 CFR 1.142(b) and MPEP § 821.03. This office action considers claims 1-8 and 18-29, of which claims 21-29 are withdrawn, and 1-8 and 18-20 presented for further prosecution. Allowable Subject Matter Claims 1-8 and 18-20 are allowed. The following is an examiner’s statement of reasons for allowance, which paraphrases and summarizes the claimed invention without intending to be limiting, wherein the legally defined scope of the claimed invention is defined by the allowed claims themselves in view of the written description under 35 USC 112. This statement is not intended to necessarily state all the reasons for allowance or all the details why the claims are allowed and has not been written to specifically or impliedly state that all the reasons for allowance are set forth (MPEP 1302.14). Regarding independent claims 1, 18, the Applicants’ replies make evident the reasons for allowance, satisfying the “record as a whole” provision of the rule 37 CFR 1.104(e). Specifically, the substance of applicants’ “Remarks - 04/06/2026 -- Applicant Arguments/Remarks Made in an Amendment” along with the amended claims in “Claims - 04/06/2026 ”, are persuasive, and are in all probability evident from the record for reasons for allowance. Moreover, after further search, the references of the Prior Art of record listed, in PTO-892, and considered pertinent to the applicant's disclosure in further searches and to the examiner’s knowledge does not teach or render obvious, at least to the skilled artisan, the instant invention regarding: A MEMS sensor device, comprising, inter alia “a first sensing gap surface of the first monocrystalline semiconductor proof mass element has a roughly etched topography that has been selectively etched to reduce stiction between the first monocrystalline semiconductor proof mass element and the second conductive electrode element” as recited in claim 1. A high aspect ratio transducer, comprising, inter alia ”a first sensing gap surface of the first high aspect ratio proof mass element has a first portion that is immediately adjacent to an second portion that has a lower surface roughness than the first portion.” as recited in claim 18, Claims 2-8 and 19-20 are allowed as those inherit the allowable subject matter from claim 1 and 18 respectively. Conclusion THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any extension fee pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to MOAZZAM HOSSAIN whose telephone number is (571)270-7960. The examiner can normally be reached on M-F: 8:30AM - 6:00 PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Julio J. Maldonado can be reached on 571-272-1864. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR to register user only. For more information about the PAIR system, see http://pair-direct.uspto.gov. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent- center for more information about Patent Center, and https://www.uspto.gov/patents/docx for information about filing in DOCX format. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative or access to the automated information system, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /MOAZZAM HOSSAIN/Primary Examiner, Art Unit 2898 May 18, 2026
Read full office action

Prosecution Timeline

May 09, 2023
Application Filed
Jan 08, 2026
Non-Final Rejection mailed — §112
Apr 06, 2026
Response Filed
May 21, 2026
Final Rejection mailed — §112 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

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LIGHT-EMITTING DEVICE
3y 3m to grant Granted May 26, 2026
Patent 12623899
ABSOLUTE PRESSURE SENSING MEMS MICROPHONE, MICROPHONE UNIT AND ELECTRONIC DEVICE
3y 4m to grant Granted May 12, 2026
Patent 12628621
SEMICONDUCTOR STRUCTURE AND METHOD OF OVERLAY MEASUREMENT OF SEMICONDUCTOR STRUCTURE
3y 3m to grant Granted May 12, 2026
Patent 12619065
PROCESS FOR MANUFACTURING A MICROELECTROMECHANICAL MIRROR DEVICE AND MICROELECTROMECHANICAL MIRROR DEVICE
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Patent 12622127
PEROVSKITE OPTOELECTRONIC DEVICE AND MANUFACTURING METHOD THEREFOR
3y 10m to grant Granted May 05, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
88%
Grant Probability
99%
With Interview (+11.0%)
2y 4m (~0m remaining)
Median Time to Grant
Moderate
PTA Risk
Based on 811 resolved cases by this examiner. Grant probability derived from career allowance rate.

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