Prosecution Insights
Last updated: April 19, 2026
Application No. 18/206,876

SEMICONDUCTOR DEVICE AND METHOD OF MAKING

Non-Final OA §102§103
Filed
Jun 07, 2023
Examiner
ZHONG, XIN Y
Art Unit
2855
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Taiwan Semiconductor Manufacturing Company Limited
OA Round
2 (Non-Final)
76%
Grant Probability
Favorable
2-3
OA Rounds
2y 11m
To Grant
91%
With Interview

Examiner Intelligence

Grants 76% — above average
76%
Career Allow Rate
465 granted / 611 resolved
+8.1% vs TC avg
Strong +15% interview lift
Without
With
+15.2%
Interview Lift
resolved cases with interview
Typical timeline
2y 11m
Avg Prosecution
33 currently pending
Career history
644
Total Applications
across all art units

Statute-Specific Performance

§101
0.7%
-39.3% vs TC avg
§103
51.8%
+11.8% vs TC avg
§102
21.0%
-19.0% vs TC avg
§112
23.6%
-16.4% vs TC avg
Black line = Tech Center average estimate • Based on career data from 611 resolved cases

Office Action

§102 §103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant's election with traverse of Group I, claims 1-14 in the reply filed on 1/12/2026 is acknowledged. The traversal is on the ground(s) that the Office has failed to demonstrate that a serious search or examination burden would be placed upon the Office if the election was not required, also claim 21 is amended herein and comprises the subject matter of claim 1. This is not found persuasive because in the Office Action mailed on 11/10/2025, Examiner showed that Group I and Group II have different classifications. Furthermore, regarding the amendment to claim 21. I. Claims 1-14, drawn to a semiconductor device, classified in G01C19/00. III. Amended claims 21-26, drawn to a semiconductor device, classified in G01C19/5769. The inventions are independent or distinct, each from the other because: Inventions I and III are directed to related products. The related inventions are distinct if: (1) the inventions as claimed are either not capable of use together or can have a materially different design, mode of operation, function, or effect; (2) the inventions do not overlap in scope, i.e., are mutually exclusive; and (3) the inventions as claimed are not obvious variants. See MPEP § 806.05(j). In the instant case, the inventions as claimed in Group I requires a bump stop structure overlying the metal layer while Group III dose not, also Group III requires an accelerometer, comprising: a second portion of the titanium layer; and a second portion of the nitride layer over the second portion of the titanium layer while Group I does not. Furthermore, the inventions as claimed do not encompass overlapping subject matter and there is nothing of record to show them to be obvious variants. The requirement is still deemed proper and is therefore made FINAL. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1-3 and 8-11 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Lee et al. (U.S. Publication No. 20180312396). Regarding claim 1, Lee teaches a semiconductor device, comprising: a metal layer (Figs.1-8, 150); and a gyroscope (Fig.6, 320) comprising a getter structure (Figs.1-8, 215) overlying the metal layer (Figs.1-8, 150 and paragraph 57), wherein the getter structure comprises titanium (Paragraph 57 and Claim 6). Regarding claim 2, Lee teaches the getter structure is exposed to a vacuum sealed space (Paragraph 50). Regarding claim 3, Lee teaches the gyroscope comprises a bump stop structure overlying the metal layer (Paragraphs 64-66). Regarding claim 8, Lee teaches a semiconductor device, comprising: a metal layer (Figs.1-8, 150); a gyroscope (Fig.6, 320) comprising a getter structure (Figs.1-8, 215) overlying the metal layer (Figs.1-8, 150 and paragraph 57), wherein the getter structure comprises titanium (Paragraph 57 and Claim 6); and an accelerometer (Fig.6, 310) comprising an outgassing structure (Figs.1-8, 200) overlying the metal layer (Figs.1-8, 150). Regarding claim 9, Lee teaches the outgassing structure comprises silicon oxide (Paragraph 70). Regarding claim 10, Lee teaches the getter structure is exposed to a vacuum sealed space (Paragraph 50). Regarding claim 11, Lee teaches the gyroscope comprises a bump stop structure overlying the metal layer (Paragraphs 64-66). Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 4-7 and 12-14 are rejected under 35 U.S.C. 103 as being unpatentable over Lee et al. (U.S. Publication No. 20180312396) in view of Cuthbertson et al. (U.S. Publication No. 20200270123). Regarding claims 4 and 12, Lee teaches all the features of claims 3 and 11 as outlined above, Lee is silent about wherein the bump stop structure comprises: a first dielectric structure; a second dielectric structure, wherein a sidewall of the first dielectric structure faces and is spaced apart from a sidewall of the second dielectric structure; and a metal nitride layer comprising: a first portion aligned with the sidewall of the first dielectric structure; and a second portion aligned with the sidewall of the second dielectric structure. Cuthbertson teaches wherein the bump stop structure (As shown in the reproduced Fig.10, 1016) comprises: a first dielectric structure (As shown in the reproduced Fig.10, first dielectric structure); a second dielectric structure (As shown in the reproduced Fig.10, second dielectric structure), wherein a sidewall of the first dielectric structure faces and is spaced apart from a sidewall of the second dielectric structure (As shown in the reproduced Fig.10, there is a gap between the first dielectric structure and the second dielectric structure); and a metal nitride layer (Fig.10, 1012 and paragraph 76) comprising: a first portion aligned with the sidewall of the first dielectric structure; and a second portion aligned with the sidewall of the second dielectric structure (As shown in the reproduced Fig.10, left portion of 1012 is on top of the first dielectric structure and right portion of 1012 is on top of the second dielectric structure). It would have been obvious to one of ordinary skill in the art before the effective filling date of the claimed invention to replace Lee’s bump stop with Cuthbertson’s bump stop because Wang’s bump stop provides better protection. PNG media_image1.png 859 1006 media_image1.png Greyscale Regarding claims 5 and 13, the combination of Lee and Cuthbertson teaches all the features of claims 4 and 12 as outlined above, Cuthbertson further teaches wherein: the first portion of the metal nitride layer is spaced apart from the second portion of the metal nitride layer (Fig.10, there is a gap between left portion of 1012 and right portion of 1012). Regarding claims 6 and 14, the combination of Lee and Cuthbertson teaches all the features of claims 4 and 12 as outlined above, Cuthbertson further teaches the metal nitride layer comprises titanium nitride (Paragraph 76). Regarding claim 7, the combination of Lee and Cuthbertson teaches all the features of claim 4 as outlined above, Cuthbertson further the first dielectric structure (As shown in the reproduced Fig.10, first dielectric structure) comprises: a first oxide structure (As shown in the reproduced Fig.10, 1006); and a first nitride structure (As shown in the reproduced Fig.10, 1008) overlying the first oxide structure; the second dielectric structure (As shown in the reproduced Fig.10, second dielectric structure) comprises: a second oxide structure (As shown in the reproduced Fig.10, 1006); and a second nitride structure (As shown in the reproduced Fig.10, 1008) overlying the second oxide structure; a third portion of the metal nitride layer overlies a top surface of the first nitride structure (Fig.10, left side of 1012 overlies a top surface of left side 1008); and a fourth portion of the metal nitride layer overlies a top surface of the second nitride structure (Fig.10, right side of 1012 overlies a top surface of right side 1008). Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to XIN Y ZHONG whose telephone number is (571)272-3798. The examiner can normally be reached M-F 9 a.m. - 6 p.m.. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Kristina Deherrera can be reached at 303-297-4237. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /XIN Y ZHONG/Primary Examiner, Art Unit 2855
Read full office action

Prosecution Timeline

Jun 07, 2023
Application Filed
Aug 09, 2025
Non-Final Rejection — §102, §103
Jan 12, 2026
Response Filed
Jan 29, 2026
Non-Final Rejection — §102, §103 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

2-3
Expected OA Rounds
76%
Grant Probability
91%
With Interview (+15.2%)
2y 11m
Median Time to Grant
Moderate
PTA Risk
Based on 611 resolved cases by this examiner. Grant probability derived from career allow rate.

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