Prosecution Insights
Last updated: May 29, 2026
Application No. 18/213,894

SACRIFICIAL PASSIVATION FILM DEPOSITION METHOD, TRENCH ETCHING METHOD AND SEMICONDUCTOR PROCESSING APPARATUS USING LOW-TEMPERATURE ALD PROCESS

Final Rejection §102§103
Filed
Jun 26, 2023
Priority
Aug 11, 2022 — RE 10-2022-0100625
Examiner
CULBERT, ROBERTS P
Art Unit
1716
Tech Center
1700 — Chemical & Materials Engineering
Assignee
Semes Co. Ltd.
OA Round
2 (Final)
82%
Grant Probability
Favorable
3-4
OA Rounds
0m
Est. Remaining
78%
With Interview

Examiner Intelligence

Grants 82% — above average
82%
Career Allowance Rate
664 granted / 814 resolved
+16.6% vs TC avg
Minimal -3% lift
Without
With
+-3.4%
Interview Lift
resolved cases with interview
Typical timeline
2y 4m
Avg Prosecution
17 currently pending
Career history
835
Total Applications
across all art units

Statute-Specific Performance

§101
0.9%
-39.1% vs TC avg
§103
63.6%
+23.6% vs TC avg
§102
15.0%
-25.0% vs TC avg
§112
3.6%
-36.4% vs TC avg
Black line = Tech Center average estimate • Based on career data from 814 resolved cases

Office Action

§102 §103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Response to Arguments Applicant's arguments filed 4/28/26 have been fully considered. Applicant has argued that the amended Claims 1, 4-13 and 15-18 should overcome the Prior Art rejections. The argument is persuasive. Applicant has argued that the feature of a first energy source for depositing primary film different from a second energy source for depositing the secondary film as recited in the context of New Claim 21 is not shown or suggested by Henri. However, the argument is not persuasive because Henri teaches the plasma energy from RF power (514) and thermal energy source (510) is used for providing temperature (Figure 5 substrate support). Claim Rejections - 35 USC § 102/103 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim 21 is rejected under 35 U.S.C. 102(a)(1) as being anticipated by, or in the alternative, under 35 U.S.C. 103 as being unpatentable over US Patent 9,385,318 to Henri. Regarding Claim 21, Henri teaches a sacrificial passivation film deposition method using a low-temperature atomic layer deposition (ALD) process, comprising: depositing a primary sacrificial passivation film (109) on an entire surface of a substrate using a thermal ALD (T-ALD) process (Col. 8, Lines 39-47 and Col. 12, Lines15-67); and additionally depositing a secondary sacrificial passivation film (110) on an upper surface and at least a portion of a side surface of an upper portion of the primary sacrificial passivation film using a plasma-ALD (P-ALD) process (Col. 13, Line 1 - Col. 14, Line 22) wherein the thermal energy source (510) is used for providing temperature (Figure 5 substrate support) in depositing a primary fil, and different plasma energy source RF frequency power (514) is used for depositing a second film. Regarding Claim 21, Henri teaches the method of the invention substantially as claimed with sufficient specificity, however, it further would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to perform the first forming step with thermal ALD (T-ALD) process and the second forming step with plasma-ALD (P-ALD) process in order to suitably form the layers while protecting the underlying material with predictable results. Further, the use of a different power source for plasma is conventional and would have been an obvious expedient to one of ordinary skill in the art before the effective filing date of the claimed invention. Allowable Subject Matter Claims 1, 4-13 and 15-18 are allowed. Conclusion Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to Roberts P Culbert whose telephone number is (571)272-1433. The examiner can normally be reached Monday thru Thursday 7:30 AM-6 PM EST. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Parviz Hassanzadeh can be reached at 571-272-1435. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /ROBERTS P CULBERT/Primary Examiner, Art Unit 1716
Read full office action

Prosecution Timeline

Jun 26, 2023
Application Filed
Feb 04, 2026
Non-Final Rejection mailed — §102, §103
Apr 28, 2026
Response Filed
May 20, 2026
Final Rejection mailed — §102, §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12640348
PULSING REMOTE PLASMA FOR ION DAMAGE REDUCTION AND ETCH UNIFORMITY IMPROVEMENT
3y 5m to grant Granted May 26, 2026
Patent 12642027
LINE EDGE ROUGHNESS (LER) IMPROVEMENT OF RESIST PATTERNS
2y 7m to grant Granted May 26, 2026
Patent 12642028
METHODS FOR WET ATOMIC LAYER ETCHING OF TUNGSTEN
2y 1m to grant Granted May 26, 2026
Patent 12635434
HIGH ASPECT RATIO CONTACT ETCHING WITH ADDITIVE GAS
3y 1m to grant Granted May 19, 2026
Patent 12635436
PLASMA PROCESSING METHOD AND PLASMA PROCESSING SYSTEM
2y 11m to grant Granted May 19, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
82%
Grant Probability
78%
With Interview (-3.4%)
2y 4m (~0m remaining)
Median Time to Grant
Moderate
PTA Risk
Based on 814 resolved cases by this examiner. Grant probability derived from career allowance rate.

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