Prosecution Insights
Last updated: October 02, 2026
Application No. 18/221,797

SEMICONDUCTOR WAFER CONFIGURED FOR SINGLE TOUCH-DOWN TESTING

Non-Final OA §112
Filed
Jul 13, 2023
Priority
Oct 13, 2022 — provisional 63/415,924
Examiner
GOODWIN, DAVID J
Art Unit
2817
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
SanDisk Technologies Inc.
OA Round
3 (Non-Final)
67%
Grant Probability
Favorable
3-4
OA Rounds
0m
Est. Remaining
84%
With Interview

Examiner Intelligence

Grants 67% — above average
67%
Career Allowance Rate
553 granted / 821 resolved
-0.6% vs TC avg
Strong +16% interview lift
Without
With
+16.5%
Interview Lift
resolved cases with interview
Typical timeline
3y 2m
Avg Prosecution
54 currently pending
Career history
892
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
60.4%
+20.4% vs TC avg
§102
17.8%
-22.2% vs TC avg
§112
18.6%
-21.4% vs TC avg
Black line = Tech Center average estimate • Based on career data from 821 resolved cases

Office Action

§112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Status Previous action: claims 1 through 3 and 5 through 19 allowed, claim 20 rejected. Present action: claims 1 through 3 and 5 through 19 rejected, claim 20 allowed. Information Disclosure Statement The information disclosure statement (IDS) submitted on 5/15/2026 and 8/26/2026 was filed after the mailing date of the non-final rejection on The submission is in compliance with the provisions of 37 CFR 1.97. Accordingly, the 5/4/2026 information disclosure statement is being considered by the examiner. Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 1 through 3 and 5 through 19 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Claim 1 recites the limitation "the voltage pad" in line 14. There is insufficient antecedent basis for this limitation in the claim. The precent recites “at least one voltage pad” in claim 1 line 5 Claim 3 recites the limitation "the voltage pads" in line 1. There is insufficient antecedent basis for this limitation in the claim. The precedent recites “at least one voltage pad” in claim1 line 5. Claim 3 recites “a pair of semiconductor dies of the pairs of semiconductor dies” in line 2. However, it is unclear whether this refires to the “a pair of semiconductor dies of the pairs of semiconductor dies” recited in claim 1 line 14. Claim 5 recites the limitation "the voltage pad" in line 1. There is insufficient antecedent basis for this limitation in the claim. The precent recites “at least one voltage pad” claim 1 line 5 Claim 8 recites the limitation "the voltage pad" in line 1. There is insufficient antecedent basis for this limitation in the claim. The precent recites “at least one voltage pad” claim 1 line 5 Claim 9 recites the limitation "the voltage pad" in line 1. There is insufficient antecedent basis for this limitation in the claim. The precent recites “at least one voltage pad” claim 1 line 5 Claim 15 recites the limitation "the voltage pad" in line 9. There is insufficient antecedent basis for this limitation in the claim. The precent recites “at least one voltage pad” claim 15 line 5 Claim 15 recites “a plurality of severed traces extending from the test pads, the plurality of severed traces configured to couple the test pads of the semiconductor die with a second set of test pads of a second semiconductor die” in lines 6 through 8. The phrase comprises a contradiction, if the traces are severed then the traces are not configured to couple test pads of first and second die, if the traces are configured to couple test pads of first and second die, then they are not severed. Claims 2 through 14 depend from and incorporate claim 1. Claims 16 through 19 depend from and incorporate claim 15. Allowable Subject Matter Claim 20 is allowed. Claims 1 through 3 and 5 through 19 would be allowable if rewritten or amended to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action. The following is an examiner’s statement of reasons for allowance: Regarding claim 1, in combination with other elements of the claim, the prior art does not teach a semiconductor wafer configured to be tested by a test assembly a plurality of semiconductor dies, comprising test pads and at least one voltage pad; a plurality of traces extending between the test pads of pairs of semiconductor dies, the plurality of traces extending into the first and/or second sets of scribe lines, and the plurality of traces electrically coupling the test pads of first and second dies of the pairs of semiconductor dies together; wherein the voltage pad on a first semiconductor die of a pair of semiconductor dies of the pairs of semiconductor dies is configured to mate with a ground pin on the probe card to distinguish between the first and second semiconductor dies. Regarding claim 15, in combination with other elements of the claim, the prior art does not teach a semiconductor die configured to be tested by a test assembly while part of a wafer, a plurality of die bond pads comprising test pads and at least one voltage pad; a plurality of severed traces extending from the test pads; wherein the voltage pad is configured to mate with one of a ground pin and power pin on the probe card, the semiconductor die having an address unique from the second semiconductor die, depending on whether the voltage pad is configured to mate with the ground or power pins on the probe card. Regarding claim 20, in combination with other elements of the claim, the prior art does not teach a semiconductor wafer configured to be tested by a test assembly a plurality of semiconductor dies, each comprising test pads and at least one voltage pad; a first set of scribe lines; a second set of scribe lines; a plurality of traces extending between the test pads of pairs of semiconductor dies, and the plurality of traces electrically coupling like channels of the test pads of first and second dies of the pairs of semiconductor dies together; and means for selectively addressing the first semiconductor die uniquely from the second semiconductor die. Response to Arguments Applicant’s arguments, see remarks, filed 7/29/2026, with respect to 20 have been fully considered and are persuasive. The rejection of claim 20 has been withdrawn. However new rejections based 35 U.S.C. 112 (pre-AIA ), second paragraph have been applied to claims 1 through 3 and 5 through 19. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to DAVID J GOODWIN whose telephone number is (571)272-8451. The examiner can normally be reached Monday - Friday, 11:00 - 19:00. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Kretelia Graham can be reached at (571)272-5055. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /D.J.G/Examiner, Art Unit 2817 /NICHOLAS J TOBERGTE/Primary Examiner, Art Unit 2817
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Prosecution Timeline

Jul 13, 2023
Application Filed
Sep 30, 2025
Non-Final Rejection mailed — §112
Dec 30, 2025
Response Filed
May 04, 2026
Non-Final Rejection mailed — §112
Jul 29, 2026
Response Filed
Sep 24, 2026
Non-Final Rejection mailed — §112 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12751277
SEMICONDUCTOR CHIP WITH STEPPED SIDEWALL, SEMICONDUCTOR PACKAGE INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME
4y 1m to grant Granted Sep 29, 2026
Patent 12740479
METHOD OF FORMING A DIE STRUCTURE INCLUDING A CONTROLLED THICKNESS LAYER AND AN APPARATUS FOR PERFORMING THE METHOD
3y 8m to grant Granted Sep 15, 2026
Patent 12733179
PROGRAMMABLE HYBRID MEMORY AND CAPACITIVE DEVICE IN A DRAM PROCESS
3y 8m to grant Granted Sep 08, 2026
Patent 12708016
SEMICONDUCTOR DEVICE
3y 7m to grant Granted Aug 11, 2026
Patent 12696462
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
3y 5m to grant Granted Jul 28, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
67%
Grant Probability
84%
With Interview (+16.5%)
3y 2m (~0m remaining)
Median Time to Grant
High
PTA Risk
Based on 821 resolved cases by this examiner. Grant probability derived from career allowance rate.

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