Prosecution Insights
Last updated: July 17, 2026
Application No. 18/229,446

SEMICONDUCTOR PACKAGE

Final Rejection §102§103
Filed
Aug 02, 2023
Priority
Sep 08, 2022 — RE 10-2022-0113913
Examiner
MENZ, LAURA MARY
Art Unit
2813
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Samsung Electronics Co., Ltd.
OA Round
2 (Final)
88%
Grant Probability
Favorable
3-4
OA Rounds
0m
Est. Remaining
96%
With Interview

Examiner Intelligence

Grants 88% — above average
88%
Career Allowance Rate
823 granted / 941 resolved
+19.5% vs TC avg
Moderate +8% lift
Without
With
+8.5%
Interview Lift
resolved cases with interview
Typical timeline
2y 5m
Avg Prosecution
40 currently pending
Career history
973
Total Applications
across all art units

Statute-Specific Performance

§101
2.1%
-37.9% vs TC avg
§103
42.3%
+2.3% vs TC avg
§102
28.0%
-12.0% vs TC avg
§112
2.5%
-37.5% vs TC avg
Black line = Tech Center average estimate • Based on career data from 941 resolved cases

Office Action

§102 §103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant’s election without traverse of claims 1-11 in the reply filed on 10/9/25 is acknowledged. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claim(s) 1-9 is/are rejected under 35 U.S.C. 102(a)(2) as being anticipated by Shimada (US 2022/0013440). 1. A semiconductor package, comprising: a substrate (Fig.4A-4B (1/100) and [0021]) extending in first direction and a second direction intersecting the first direction (x/y/z direction- see Fig.4A-4B the substrate is a 3D structure) and comprising a solder resist layer (Fig.2B (300) and [0021]) having an open area thereon (Fig.2B/4B (303) and [0024]); a semiconductor chip (Fig.4A-4B (500) and [0032]) on the substrate (Fig.4A-4B (1/100) and [0021]) in a third direction (Fig.4A-4B (500) and [0032]), the third direction intersecting the first direction and the second direction (x/y/z direction- see Fig.4A-4B the substrate is a 3D structure), a first surface of the semiconductor chip (Fig.4A-4B (500-bottom surface) and [0032]) facing the substrate (Fig.4A-4B (1/100) and [0021]); and a bump structure (Fig.4B (400) and [0032]) in contact with a first connection pad (Fig.4B (200) and [0032]) on the open area (Fig.2B/4B (303) and [0024]) and a second connection pad (Fig.4B (510) and [0032]) on the first surface of the semiconductor chip (Fig.4A-4B (500-bottom surface) and [0032]), and configured to connect the substrate (Fig.4A-4B (1/100) and [0021]) to the semiconductor chip (Fig.4A-4B (500) and [0032]), wherein the open area (Fig.2B/4B (303) and [0024]) comprises a first area (Fig.4B (opening above middle 300) and [0024])/ (Fig.2B (303- portion 301) and [0024]) corresponding to a central part of the semiconductor chip (Fig.4A-4B (500) and [0032]) and having a first length (Fig.2B (303- portion 301) and [0024]) extending in the first direction (x-direction); and a second area (Fig.4B (openings on left and right near peripheral regions 300) and [0024]) disposed in a corresponding peripheral part of the first area semiconductor chip (Fig.4A-4B (500) and [0032]), and having a second length (Fig.2B (303- portion 302) and [0024]) in the first direction (x-direction) wherein the first length (Fig.4B (opening above middle 300) and [0024])/(Fig.2B (303- portion 301) and [0024])) of the first area in the first direction is greater than the second length (Fig.4B (openings on left and right near peripheral regions 300) and [0024])/ (Fig.2B (303- portion 302) and [0024]). See annotated drawing below: PNG media_image1.png 402 785 media_image1.png Greyscale 2. The semiconductor package of claim 1, wherein a ratio of the length of the first area (Fig.2B (303- portion 301) and [0024]) in the first direction (x-direction) to a length of the first area (Fig.2B (303- portion 301) and [0024]) in the second direction (z-direction) is larger than a ratio of the length of the second area (Fig.2B (303- portion 302) and [0024]) in the first direction (x-direction) to a length of the second area (Fig.2B (303- portion 302) and [0024]) in the second direction (z-direction) See Fig.2B). 3. The semiconductor package of claim 1, wherein a width of the bump structure (Fig.4B/5A-5B (400/410) and [0032]) in the first area (Fig.2B (303- portion 301) and [0024]) in the second direction (z-direction) is smaller than a width of the bump structure (Fig.4B/5A-5B (400/410) and [0032]) in the second area (Fig.2B (303- portion 302) and [0024]) in the second direction (z-direction). 4. The semiconductor package of claim 1, wherein a length of the first area (Fig.2B (303- portion 301) and [0024]) in the second direction (z-direction) is substantially the same as a length of the second area (Fig.2B (303- portion 302) and [0024]) in the second direction (z-direction). 5. The semiconductor package of claim 1, wherein a length of the bump structure (Fig.4B/5A-5B (400/410) and [0032]) in the first area (Fig.2B (303- portion 301) and [0024]) in the first direction (x-direction) is greater than a length of the bump structure (Fig.4B/5A-5B (400/410) and [0032]) in the first area (Fig.2B (303- portion 302) and [0024]) in the second direction (z-direction). 6. The semiconductor package of claim 1, wherein the open area (Fig.2B/4B (303) and [0024]) comprises a plurality of spaced portions (Fig.2A-2B (303- portions 301 and 302) and [0024]) spaced apart from each other in the second direction (y/z direction- See Fig.s 2A-2B). 7. The semiconductor package of claim 6, wherein each of the plurality of spaced portions comprises curved parts (Fig.6A/6B (301/302/303) and [0041]). 8. The semiconductor package of claim 1, further comprising a plurality of alignment patterns disposed adjacent to edge areas of the semiconductor chip, when viewed in a plan view (Fig.1A- electrodes 200/ solder resists openings 303 are aligned and are interpreted as alignment marks for the mounting board and chip- [0021]). 9. The semiconductor package of claim 8, wherein the plurality of alignment patterns have different shapes (Fig.1A/6A/6B). Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 10 is/are rejected under 35 U.S.C. 103 as being unpatentable over Shimada (US 2022/0013440) in further view of Lee et al (US 20070096336). In reference to claim 10, Shimada teaches the limitations of claim 1 as cited above; however fails to explicitly teach the limitation of claim 10 as recited below: 10. The semiconductor package of claim 1, further comprising a non-conductive material layer between the substrate and the semiconductor chip. However Lee et al teaches: further comprising a non-conductive material layer (Fig.1A (12) and [0003]) between the substrate (Fig.1A (11) and [0003])and the semiconductor chip (Fig.1A (10) and [0003]). It would have been obvious to one of ordinary skill in the art at the time the invention was filed to modify Shimada’s teachings to further include an underfill material (Fig.1A (12) and [0003]) as taught by Lee – because doing so provides additional strength to secure the chip and prevent deformation [Lee- [0003]). Moreover, such underfill materials are well-known and commonplace in the art for such purposes. Claim(s) 11 is/are rejected under 35 U.S.C. 103 as being unpatentable over Shimada (US 2022/0013440) in further view of Motoyoshi (WO 2014/136241) Shimada teaches the limitations of claim 1 as cited above, however fails to teach the limitations of claim 11 as recited below: 11. The semiconductor package of claim 1, further comprising a plurality of semiconductor chips electrically connected via a through via and a connection structure on the semiconductor chip. However, Motoyoshi teaches a plurality of semiconductor chips electrically connected via a through via and a connection structure on the semiconductor chip (Fig.2A (TSV chips 21) and [0010]). It would have been obvious to one of ordinary skill in the art to modify Shimada’s teachings to include a chip stack connected via through vias as taught by Motoyoshi because such a configuration is well known in the art of semiconductors and allows for more chip functionality with limited surface space. Response to Arguments Applicant's arguments filed 5/12/26 have been fully considered but they are not persuasive. Applicant argues that the Examiner in the interview assured the Applicant that the claim amendment would overcome the art of record. The Examiner’s interview summary indicates that the Examiner encouraged the Applicant to include the protrusion portion taught in the Applicant’s specification and to amend the claims further than the proposed amendment. It appears only the proposed amendment was filed. The proposed amendment is anticipated by Shimada as cited above and annotated below: PNG media_image1.png 402 785 media_image1.png Greyscale The first opening is longer than the second opening in the x direction. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Park et al (US 20230223327); Igarshi et al (WO 2011102561); and Lee (US 20250336857) teach similar structures. THIS ACTION IS MADE FINAL. Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to LAURA M MENZ whose telephone number is (571)272-1697. The examiner can normally be reached Monday-Friday 7:00-3:30. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Steven Gauthier can be reached at 571-270-0373. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /LAURA M MENZ/Primary Examiner, Art Unit 2813 6/8/26
Read full office action

Prosecution Timeline

Aug 02, 2023
Application Filed
Jan 02, 2026
Non-Final Rejection (signed) — §102, §103
Feb 13, 2026
Non-Final Rejection mailed — §102, §103
Apr 15, 2026
Applicant Interview (Telephonic)
Apr 22, 2026
Examiner Interview Summary
May 12, 2026
Response Filed
Jun 10, 2026
Final Rejection mailed — §102, §103 (current)

Precedent Cases

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
88%
Grant Probability
96%
With Interview (+8.5%)
2y 5m (~0m remaining)
Median Time to Grant
Moderate
PTA Risk
Based on 941 resolved cases by this examiner. Grant probability derived from career allowance rate.

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