Prosecution Insights
Last updated: May 29, 2026
Application No. 18/234,899

WAFER SUPPORT PLATE AND SEMICONDUCTOR MANUFACTURING APPARATUS INCLUDING SAME

Non-Final OA §102§103
Filed
Aug 17, 2023
Priority
Aug 23, 2022 — JP 2022-132584
Examiner
CROWELL, ANNA M
Art Unit
1716
Tech Center
1700 — Chemical & Materials Engineering
Assignee
United Semiconductor Japan Co., Ltd.
OA Round
1 (Non-Final)
45%
Grant Probability
Moderate
1-2
OA Rounds
1y 0m
Est. Remaining
76%
With Interview

Examiner Intelligence

Grants 45% of resolved cases
45%
Career Allowance Rate
192 granted / 429 resolved
-20.2% vs TC avg
Strong +31% interview lift
Without
With
+30.8%
Interview Lift
resolved cases with interview
Typical timeline
3y 10m
Avg Prosecution
25 currently pending
Career history
469
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
78.8%
+38.8% vs TC avg
§102
4.2%
-35.8% vs TC avg
§112
0.7%
-39.3% vs TC avg
Black line = Tech Center average estimate • Based on career data from 429 resolved cases

Office Action

§102 §103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant’s election with traverse of Species V-Figure 6 (claims 1-4, 8-9, and 12-13 in the reply filed on March 24, 2026 is acknowledged. Claims 5-7, 10-11, and 14-20 are withdrawn from further consideration pursuant to 37 CFR 1.142(b), as being drawn to a nonelected species, there being no allowable generic or linking claim. The traversal is on the ground(s) that since the primary inventive concept (i.e., the technical feature related to the gas introduction pipe) is consistent across these species, searching one species would necessarily involve searching the others. Therefore, maintaining the restriction does not significantly reduce Examiner's search burden. This is not found persuasive because the search and examination of the entire application would place a serious burden on the Examiner since the search required for the features of the elected species is not co-extensive with the search required for the features of the non-elected species. The requirement is still deemed proper and is therefore made FINAL. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1, 3-4, and 12-13 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Hyoubu (WO 2007/114331A1). Referring to Figures 5 and 12, and paragraphs [0038]-[0043], [0097]-[0102] , Hyoubu discloses a wafer support plate 51, comprising: a flat portion 54 configured to support a wafer (par.[0038]); and an outer circumferential protruding portion 59 (par.[0039]), being disposed in a surrounding shape on an outer circumference of the flat portion and being formed with a larger thickness than the wafer (Fig. 5A); wherein the flat portion comprises a perforated support portion 53 and an annular support portion 51 (Fig. 5A-i.e. peripheral portion of wafer support plate 51), and the annular support portion is disposed outside of the perforated support portion and is configured to support an outer circumferential end portion of the wafer (Figs. 5A-5B). PNG media_image1.png 326 653 media_image1.png Greyscale With respect to claim 3, the wafer support plate of Hyoubu discloses wherein the perforated support portion 303 comprises a linear portion, the perforated support portion comprises a linear pattern, and the linear pattern is symmetric with respect to a center of the flat portion (Fig. 19). PNG media_image2.png 340 568 media_image2.png Greyscale With respect to claim 4, the wafer support plate of Hyoubu discloses the wafer support plate further includes wherein the perforated support portion 303 comprises a ring-shaped portion centered on the center of the flat portion and a radial linear portion extending radially in a linear shape from the ring-shaped portion to the annular support portion (Fig. 19). With respect to claim 12, the wafer support plate of Hyoubu discloses wherein the wafer support plate is formed with a heat resistant material and a melting point of the heat resistance material is equal to or higher than 500oC (par.[0043]). With respect to claim 13, the wafer support plate of Hyoubu discloses wherein the heat resistant material further comprises one of a steel use stainless, a titanium alloy, a nickel alloy, a cobalt alloy, a tantalum alloy, and a molybdenum alloy or a combination thereof (par.[0043]). Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 8 is/are rejected under 35 U.S.C. 103 as being unpatentable over Hyoubu (WO 2007/114331A1). Hyoubu discloses a perforated support portion 303 comprises a linear portion (Fig. 19). Hyoubu is silent on the wafer support plate further includes wherein the perforated support portion comprises a linear portion with a width equal to 3 mm, more than 3 mm and less than 30 mm, or equal to 30 mm. However, since Hyoubu shows wafer support plate with a linear portion, then it should be noted that where the only difference between the prior art and the claims was a recitation of relative dimensions of the claimed linear portion and a linear portion having the claimed relative dimensions would not perform differently than the prior art linear portion, the claimed linear portion was not patentably distinct from the prior art linear portion (MPEP 2144.04 IVA).[AltContent: rect] Claim(s) 2 and 9 is/are rejected under 35 U.S.C. 103 as being unpatentable over Hyoubu (WO 2007/114331A1) in view of Kim (U.S. 2007/0151515). The teachings of Hyoubu have been discussed above. Specifically, Hyoubu discloses a gas introduction pipe extending from a side surface of the outer circumferential protruding portion. However, Hyoubu fail to teach wherein a gas introduction pipe extending from a top surface to an inner circumferential sidewall is formed in the outer circumferential protruding portion. With respect to claim 2, referring to Figure 4 and paragraphs [0066]-[0070]the wafer support plate of Hyoubu discloses wherein a gas introduction pipe 70 extending from a top surface to an inner circumferential sidewall is formed in the outer circumferential protruding portion in order to provide coolant spray above the wafer (par.[0066]). Therefore, it would have been obvious to one of ordinary skill in the art, before the effective filing date of the claimed invention, to have modified the apparatus of Hyoubu with a gas introduction pipe extending from a top surface to an inner circumferential sidewall is formed in the outer circumferential protruding portion as taught by Kim since it is an alternate arrangement that would provide coolant spray above the wafer. With respect to claim 9, the wafer support plate of Hyoubu in view of Kim further includes wherein the gas introduction pipe 70 of the outer circumferential protruding portion comprises a gas introduction hole disposed in the top surface, a gas discharge hole disposed in the inner circumferential sidewall, and a gas flow channel 71 allowing the gas introduction hole to communicate with the gas discharge hole (Kim-Fig. 4). Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Srinivasan et al.’753 and Yudovsky et al.’011 teach a gas introduction pipe in an outer circumferential protruding portion. Hashiguchi’900 teach a wafer support having an outer circumferential protruding portion. Arai et al.’256 teach a gas introduction pipe in a wafer support. Any inquiry concerning this communication or earlier communications from the examiner should be directed to Michelle CROWELL whose telephone number is (571)272-1432. The examiner can normally be reached Monday-Thursday 10:00am-6:00pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Parviz Hassanzadeh can be reached at 571-272-1435. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /Michelle CROWELL/Examiner, Art Unit 1716 /SYLVIA MACARTHUR/Primary Examiner, Art Unit 1716
Read full office action

Prosecution Timeline

Aug 17, 2023
Application Filed
May 20, 2026
Non-Final Rejection mailed — §102, §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12620563
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
4y 11m to grant Granted May 05, 2026
Patent 12603255
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
5y 0m to grant Granted Apr 14, 2026
Patent 12604708
ATOMIC LAYER ETCH SYSTEMS FOR SELECTIVELY ETCHING WITH HALOGEN-BASED COMPOUNDS
4y 11m to grant Granted Apr 14, 2026
Patent 12555741
MAGNETIC HOUSING SYSTEMS
3y 1m to grant Granted Feb 17, 2026
Patent 12548739
PLASMA SOURCE FOR SEMICONDUCTOR PROCESSING
2y 11m to grant Granted Feb 10, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

Strategy Recommendation AI-generated — please review before filing

Get a prosecution strategy drawn from examiner precedents, rejection analysis, and claim mapping.
Typically takes 5-10 seconds — AI-generated, attorney review required before filing

Prosecution Projections

1-2
Expected OA Rounds
45%
Grant Probability
76%
With Interview (+30.8%)
3y 10m (~1y 0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 429 resolved cases by this examiner. Grant probability derived from career allowance rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month