Prosecution Insights
Prosecution Insights
Tech Center 3700 • Art Units: 1712 1713 1716 1792 3722
This examiner grants 45% of resolved cases
Anna M. Crowell has 439 resolved cases in Tech Center 3700 and Art Unit 1712. The examiner has an allowance rate of 44.6 percent. The median days to allowance is 1404, which represents the timeframe for applications that reach a grant under her supervision.
The interview lift is 30.5 percent. This 30.5 percent lift is a significant factor, suggesting that interviews are effective at improving the 44.6 percent allowance rate. The 1404 median days to allowance is based on a large sample of 439 cases, providing a reliable expectation for the duration of prosecution.
With 439 resolved cases, the data highlights the value of oral advocacy. The 30.5 percent interview lift is a key tool for applicants to overcome rejections. Practitioners should use the 44.6 percent allowance rate and 1404 median days to allowance to inform their strategy in Art Unit 1712.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18754531 | BARRIER LAYER REMOVAL DEVICE AND BARRIER LAYER REMOVAL METHOD | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18587026 | ION BEAM ETCHING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME, AND METHOD FOR TREATING SUBSTRATE USING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18453679 | SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME | Final Rejection | Samsung Electronics Co., Ltd. |
| 18133277 | PLASMA ETCHING APPARATUS AND OPERATING METHOD THEREOF | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18773858 | Vapor Deposition Processes | Non-Final OA | ASM IP Holding B.V. |
| 18510043 | SYSTEMS AND APPARATUS FOR SEMICONDUCTOR EQUIPMENT | Non-Final OA | ASM IP Holding B.V. |
| 18785878 | CANTILEVER WITH ETCH CHAMBER FLOW DESIGN | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18543302 | ESC DESIGN WITH ENHANCED TUNABILITY FOR WAFER FAR EDGE PLASMA PROFILE CONTROL | Non-Final OA | Applied Materials, Inc. |
| 16134200 | SYSTEMS AND PROCESSES FOR PLASMA TUNING | Final Rejection | Applied Materials, Inc. |
| 18792992 | APPARATUS FOR PLASMA PROCESSING AND METHOD OF ETCHING | Non-Final OA | Tokyo Electron Limited |
| 18789854 | HYDROPHOBIZATION TREATMENT APPARATUS, HYDROPHOBIZATION TREATMENT METHOD, AND COMPUTER STORAGE MEDIUM | Final Rejection | Tokyo Electron Limited |
| 18512566 | PLASMA PROCESSING APPARATUS AND RF SYSTEM | Non-Final OA | Tokyo Electron Limited |
| 18240010 | PLASMA PROCESSING APPARATUS | Final Rejection | Tokyo Electron Limited |
| 18360384 | SUBSTRATE SUPPORT AND PLASMA PROCESSING APPARATUS | Final Rejection | Tokyo Electron Limited |
| 17734125 | ETCHING METHOD, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING SYSTEM | Non-Final OA | Tokyo Electron Limited |
| 18471002 | SUBSTRATE PROCESSING APPARATUS, PLASMA GENERATION APPARATUS, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM | Non-Final OA | Kokusai Electric Corporation |
| 17221021 | Core-Shell Particles and Composite Material Synthesized Therefrom | Non-Final OA | Persimmon Technologies Corporation |
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