Prosecution Insights
Last updated: April 18, 2026
Application No. 18/235,766

INTEGRATED WORD LINE CONTACT STRUCTURES IN THREE-DIMENSIONAL (3D) MEMORY ARRAY

Non-Final OA §112
Filed
Aug 18, 2023
Examiner
HSIEH, HSIN YI
Art Unit
2899
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Intel Ndtm US LLC
OA Round
4 (Non-Final)
51%
Grant Probability
Moderate
4-5
OA Rounds
3y 10m
To Grant
57%
With Interview

Examiner Intelligence

Grants 51% of resolved cases
51%
Career Allow Rate
321 granted / 631 resolved
-17.1% vs TC avg
Moderate +6% lift
Without
With
+6.2%
Interview Lift
resolved cases with interview
Typical timeline
3y 10m
Avg Prosecution
57 currently pending
Career history
688
Total Applications
across all art units

Statute-Specific Performance

§103
39.3%
-0.7% vs TC avg
§102
23.1%
-16.9% vs TC avg
§112
35.3%
-4.7% vs TC avg
Black line = Tech Center average estimate • Based on career data from 631 resolved cases

Office Action

§112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Information Disclosure Statement The information disclosure statement (IDS) submitted on 12/23/2025 is in compliance with the provisions of 37 CFR 1.97. Accordingly, the information disclosure statement is being considered by the examiner. Claim Rejections - 35 USC § 112 The following is a quotation of the first paragraph of 35 U.S.C. 112(a): (a) IN GENERAL.—The specification shall contain a written description of the invention, and of the manner and process of making and using it, in such full, clear, concise, and exact terms as to enable any person skilled in the art to which it pertains, or with which it is most nearly connected, to make and use the same, and shall set forth the best mode contemplated by the inventor or joint inventor of carrying out the invention. The following is a quotation of the first paragraph of pre-AIA 35 U.S.C. 112: The specification shall contain a written description of the invention, and of the manner and process of making and using it, in such full, clear, concise, and exact terms as to enable any person skilled in the art to which it pertains, or with which it is most nearly connected, to make and use the same, and shall set forth the best mode contemplated by the inventor of carrying out his invention. Claims 21-29 and 31-41 are rejected under 35 U.S.C. 112(a) or 35 U.S.C. 112 (pre-AIA ), first paragraph, as failing to comply with the written description requirement. The claim(s) contains subject matter which was not described in the specification in such a way as to reasonably convey to one skilled in the relevant art that the inventor or a joint inventor, or for applications subject to pre-AIA 35 U.S.C. 112, the inventor(s), at the time the application was filed, had possession of the claimed invention. Claim 21 recites the limitation "a plurality of outer word lines (WLs)" in the second line of the claim, which lacks the full support of the original disclosure. The original disclosure does not disclose the structure related to the limitation of "a plurality of outer word lines (WLs)". Claim 21 recites the limitation "an outer WL contact set" in the 8th line of the claim, which lacks the full support of the original disclosure. The original disclosure does not disclose the structure related to the limitation of "an outer WL contact set". Claim 21 recites the limitation "the outer WL contact set having an outer cross sectional dimension" in the 12th line of the claim, which lacks the full support of the original disclosure. The original disclosure does not disclose the structure related to the limitation of "the outer WL contact set having an outer cross sectional dimension". Claim 21 recites the limitation "a plurality of inner WLs" in the 19th line of the claim, which lacks the full support of the original disclosure. The original disclosure does not disclose the structure related to the limitation of "a plurality of inner WLs". Claim 21 recites the limitation "an inner WL contact set" in the 23rd and 24th lines of the claim, which lacks the full support of the original disclosure. The original disclosure does not disclose the structure related to the limitation of "an inner WL contact set". Claim 21 recites the limitation "an inner WL cross sectional dimension" in the 24th line of the claim, which lacks the full support of the original disclosure. The original disclosure does not disclose the structure related to the limitation of "an inner WL cross sectional dimension". Claim 21 recites the limitation "the outer cross sectional dimension of the inner WL contact set" in the last two lines of the claim, which lacks the full support of the original disclosure. The original disclosure does not disclose the structure related to the limitation of "the outer cross sectional dimension of the inner WL contact set". Claim 27 recites the limitation "a plurality of outer word lines (WLs)" in the 4th line of the claim, which lacks the full support of the original disclosure. The original disclosure does not disclose the structure related to the limitation of "a plurality of outer word lines (WLs)". Claim 27 recites the limitation "an outer WL contact set" in the 10th line of the claim, which lacks the full support of the original disclosure. The original disclosure does not disclose the structure related to the limitation of "an outer WL contact set". Claim 27 recites the limitation "the outer WL contact set having an outer cross sectional dimension" in the 14th line of the claim, which lacks the full support of the original disclosure. The original disclosure does not disclose the structure related to the limitation of "the outer WL contact set having an outer cross sectional dimension". Claim 27 recites the limitation "a plurality of inner WLs" in the 21st line of the claim, which lacks the full support of the original disclosure. The original disclosure does not disclose the structure related to the limitation of "a plurality of inner WLs". Claim 27 recites the limitation "an inner WL contact set" in the 25th and 26th lines of the claim, which lacks the full support of the original disclosure. The original disclosure does not disclose the structure related to the limitation of "an inner WL contact set". Claim 27 recites the limitation "an inner WL cross sectional dimension" in the 26th line of the claim, which lacks the full support of the original disclosure. The original disclosure does not disclose the structure related to the limitation of "an inner WL cross sectional dimension". Claim 27 recites the limitation "the outer cross sectional dimension of the inner WL contact set" in the last two lines of the claim, which lacks the full support of the original disclosure. The original disclosure does not disclose the structure related to the limitation of "the outer cross sectional dimension of the inner WL contact set". Claim 41 recites the limitation "an outer WL group" in the 2nd and 3rd lines of the claim, which lacks the full support of the original disclosure. The original disclosure does not disclose the structure related to the limitation of "an outer WL group". Claim 41 recites the limitation "an inner WL group" in the 3rd line of the claim, which lacks the full support of the original disclosure. The original disclosure does not disclose the structure related to the limitation of "an outer WL group". Response to Arguments Applicant's arguments with respect to claims 21 and 27 have been considered but are moot in view of the new ground(s) of rejection. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Beak et al. (US 20200194373 A1) teach a three-dimensional semiconductor memory device including word lines and their contact structures. Any inquiry concerning this communication or earlier communications from the examiner should be directed to HSIN YI HSIEH whose telephone number is (571)270-3043. The examiner can normally be reached 8:30 - 5:00 pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Zandra V Smith can be reached on 571-272-2429. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /HSIN YI HSIEH/Primary Examiner, Art Unit 2899 3/31/2026
Read full office action

Prosecution Timeline

Aug 18, 2023
Application Filed
Jul 24, 2024
Non-Final Rejection — §112
Oct 30, 2024
Response Filed
Mar 04, 2025
Non-Final Rejection — §112
Mar 25, 2025
Response after Non-Final Action
Mar 25, 2025
Response Filed
Sep 02, 2025
Response Filed
Dec 20, 2025
Final Rejection — §112
Mar 30, 2026
Request for Continued Examination
Apr 01, 2026
Response after Non-Final Action
Apr 02, 2026
Non-Final Rejection — §112 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12598786
FIELD EFFECT TRANSISTOR STRUCTURES
2y 5m to grant Granted Apr 07, 2026
Patent 12575243
DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
2y 5m to grant Granted Mar 10, 2026
Patent 12550486
OPTOELECTRONIC DEVICE WITH AXIAL THREE-DIMENSIONAL LIGHT-EMITTING DIODES
2y 5m to grant Granted Feb 10, 2026
Patent 12538616
LIGHT EMITTING DIODE WITH OPTIMISED ELECTRIC INJECTION FROM A SIDE ELECTRODE
2y 5m to grant Granted Jan 27, 2026
Patent 12538617
3D LIGHT-EMITTING DIODE AND ASSOCIATED MANUFACTURING METHOD
2y 5m to grant Granted Jan 27, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

4-5
Expected OA Rounds
51%
Grant Probability
57%
With Interview (+6.2%)
3y 10m
Median Time to Grant
High
PTA Risk
Based on 631 resolved cases by this examiner. Grant probability derived from career allow rate.

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