SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF

DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Continued Examination Under 37 CFR 1.114 A request for continued examination under 37 CFR 1.114, including the fee set forth in 37 CFR 1.17(e), was filed in this application after final rejection. Since this application is eligible for continued examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, the finality of the previous Office action has been withdrawn pursuant to 37 CFR 1.114. Applicant's submission filed on 07/07/2026 has been entered. Response to Amendment The amendment filed on 07/07/2026 has been accepted and entered. Claims 1-5 and 7-8 remain pending in this application. Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 1-5 and 7-8 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. Regarding claim 1, the limitation "adjacent first channel layers of the plurality of first channel layers" in Lines L13-14, renders the claim indefinite because the antecedent basis is unclear as to whether “adjacent first channel layers of the plurality of first channel layers” (Lines L13-14) refers to new adjacent first channel layers of the plurality of first channel layers or the “adjacent first channel layers of the plurality of first channel layers” previously cited in Lines L8-9. In the purpose of compact prosecution, “adjacent first channel layers” has been interpretated as the adjacent first channel layers of the plurality of first channel layers. Regarding claim 2, the limitation " the first channel layer" in Line L4, renders the claim indefinite because the antecedent basis is unclear as to whether “the first channel layer” (Line L4) refers to a new first channel layer or the “first channel layer of the plurality of first channel layers” previously cited in Claim 2 Lines L3-4. In the purpose of compact prosecution, “the first channel layer” has been interpretated as the first channel layer of the plurality of first channel layers. Regarding claim 2, the limitation "adjacent first channel layers" in Line L5, renders the claim indefinite because the antecedent basis is unclear as to whether “adjacent first channel layers” (Lines L5) refers to new adjacent first channel layers or the “adjacent first channel layers of the plurality of first channel layers” previously cited in claim 1 Lines L8-9. In the purpose of compact prosecution, “adjacent first channel layers” has been interpretated as the adjacent first channel layers of the plurality of first channel layers. Regarding claim 2, the limitation " the first channel layer" in Lines L5-6, renders the claim indefinite because the antecedent basis is unclear as to whether “the first channel layer” (Lines L5-6) refers to a new first channel layer or the “first channel layer of the plurality of first channel layers” previously cited in Claim 2 Lines L3-4. In the purpose of compact prosecution, “the first channel layer” has been interpretated as the first channel layer of the plurality of first channel layers. Regarding claim 2, the limitation " the first source/drain doped layer" in Line L11, renders the claim indefinite because the antecedent basis is unclear as to whether “the first source/drain doped layer” (L11) refers to a new first source/drain doped layer or “each of the plurality of first source/drain doped layers” previously cited in Claim 1 Line L19. In the purpose of compact prosecution, “the first source/drain doped layer” has been interpretated as each of the plurality of first source/drain doped layers. Regarding claim 2, the limitation "the source/drain plug " in L12, renders the claim indefinite because the antecedent basis is unclear as to whether “the source/drain plug” (L12) refers to a new source/drain plug or each of the “source/drain plugs” previously cited in claim 1 L15. In the purpose of compact prosecution, “the source/drain plug” has been interpretated as each of the source/drain plugs. Regarding claim 2, the limitation "the first and second source/drain doped layers" in L12-13, renders the claim indefinite because the antecedent basis is unclear as to whether “the first and second source/drain doped layers” (L12-13) refers to new first and second source/drain doped layers or each of the plurality of first source/drain doped layers” previously cited in Claim 1 Line L19 and the second source/drain doped layer previously cited in claim 2 L7. In the purpose of compact prosecution, “the first and second source/drain doped layers” has been interpretated as each of the plurality of first source/drain doped layers and the second source/drain doped layer. Regarding claim 3, the limitation "the source/drain plug " in L1-2, renders the claim indefinite because the antecedent basis is unclear as to whether “the source/drain plug” (L1-2) refers to a new source/drain plug or each of the “source/drain plugs” previously cited in claim 1 L15. In the purpose of compact prosecution, “the source/drain plug” has been interpretated as each of the source/drain plugs. Regarding claim 4, the limitation " the first source/drain doped layer" in Line L2, renders the claim indefinite because the antecedent basis is unclear as to whether “the first source/drain doped layer” (L11) refers to a new first source/drain doped layer or “each of the plurality of first source/drain doped layers” previously cited in Claim 1 Line L19. In the purpose of compact prosecution, “the first source/drain doped layer” has been interpretated as each of the plurality of first source/drain doped layers. Regarding claim 4, the limitation " the first source/drain doped layer" in Line L2, renders the claim indefinite because the antecedent basis is unclear as to whether “the first source/drain doped layer” (L11) refers to a new first source/drain doped layer or “each of the plurality of first source/drain doped layers” previously cited in Claim 1 Line L19. In the purpose of compact prosecution, “the first source/drain doped layer” has been interpretated as each of the plurality of first source/drain doped layers. Regarding claim 7, the limitation "adjacent first channel layers" in L4-5, renders the claim indefinite because the antecedent basis is unclear as to whether “adjacent first channel layers” (Lines L4-5) refers to new adjacent first channel layers or the “adjacent first channel layers of the plurality of first channel layers” previously cited in claim 1 Lines L8-9. In the purpose of compact prosecution, “adjacent first channel layers” has been interpretated as the adjacent first channel layers of the plurality of first channel layers. Regarding claim 7, the limitation "adjacent first channel layers" in L6, renders the claim indefinite because the antecedent basis is unclear as to whether “adjacent first channel layers” (Line L6) refers to new adjacent first channel layers or the “adjacent first channel layers of the plurality of first channel layers” previously cited in claim 1 Lines L8-9. In the purpose of compact prosecution, “adjacent first channel layers” has been interpretated as the adjacent first channel layers of the plurality of first channel layers Regarding claim 7, the limitation " adjacent first source/drain doped layers" in Line L7, renders the claim indefinite because the antecedent basis is unclear as to whether “adjacent first source/drain doped layers” (L7) refers to new adjacent first source/drain doped layers or the “adjacent first source/drain doped layers of the plurality of first source/drain doped layers” previously cited in Claim 1 Line L19. In the purpose of compact prosecution, “adjacent first source/drain doped layers” has been interpretated as the adjacent first source/drain doped layers of the plurality of first source/drain doped layers. Regarding claim 7, the limitation "the source/drain plug " in L8, renders the claim indefinite because the antecedent basis is unclear as to whether “the source/drain plug” (L8) refers to a new source/drain plug or each of the “source/drain plugs” previously cited in claim 1 L15. In the purpose of compact prosecution, “the source/drain plug” has been interpretated as each of the source/drain plugs. Regarding claim 8, the limitation "the source/drain plug " in L3, renders the claim indefinite because the antecedent basis is unclear as to whether “the source/drain plug” (L3) refers to a new source/drain plug or each of the “source/drain plugs” previously cited in claim 1 L15. In the purpose of compact prosecution, “the source/drain plug” has been interpretated as each of the source/drain plugs. Allowable Subject Matter Claims 1-5 and 7-8 would be allowable if rewritten or amended to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action. The following is a statement of reasons for the indication of allowable subject matter: Regarding claim 1, the prior art of record does not teach or suggest a semiconductor structure, namely “wherein a source/drain plug of the source/drain plugs is in contact with a longitudinal side wall facing away from the gate structure of each of the plurality of first source/drain doped layers”. References such as over Cheng et al. (US20200052092A1-Cheng92) and Chen et al (US20210175367A1-Chen67)combination, teaches a semiconductor device, but does not teach or suggest a semiconductor structure, namely “wherein a source/drain plug of the source/drain plugs is in contact with a longitudinal side wall facing away from the gate structure of each of the plurality of first source/drain doped layers”, in combination with other claimed elements. The balance of the claims are allowable for at least the above-stated reasons. Response to Arguments Claim 1 has been amended to further define the claimed subject matter see pages 2-9 of Amendments to Claims, filed on 07/07/2026. Applicant’s arguments see pages 8-9 of Remarks, filed on 07/07/2026 with respect to claim(s) 1 have been fully considered and are persuasive. The cited prior art Cheng et al. (US20200052092A1-Cheng92) and Chen et al (US20210175367A1-Chen67) combination does not teach all the limitations required of amended claim 1. The 35 U.S.C 103 rejection of claim 1 has been withdrawn. Therefore claim 1 is allowed, and claims 2-5 and 7-8 are allowed at least for their dependencies. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to NATHALIE R FAYETTE whose telephone number is (571)272-1220. The examiner can normally be reached Monday-Friday 8:30 am-6pm ET. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Christine Kim can be reached at (571) 272-8458. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. NATHALIE R. FAYETTE Examiner Art Unit 2812 /NATHALIE R FAYETTE/Examiner, Art Unit 2812 09/08/2026 /CHRISTINE S. KIM/Supervisory Patent Examiner, Art Unit 2812