Prosecution Insights
Last updated: July 17, 2026
Application No. 18/284,457

PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT

Final Rejection §102
Filed
Sep 27, 2023
Priority
Mar 30, 2021 — JP 2021-057856 +1 more
Examiner
MENZ, LAURA MARY
Art Unit
2813
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Idemitsu Kosan Co.,ltd.
OA Round
2 (Final)
88%
Grant Probability
Favorable
3-4
OA Rounds
0m
Est. Remaining
96%
With Interview

Examiner Intelligence

Grants 88% — above average
88%
Career Allowance Rate
823 granted / 941 resolved
+19.5% vs TC avg
Moderate +8% lift
Without
With
+8.5%
Interview Lift
resolved cases with interview
Typical timeline
2y 5m
Avg Prosecution
40 currently pending
Career history
973
Total Applications
across all art units

Statute-Specific Performance

§101
2.1%
-37.9% vs TC avg
§103
42.3%
+2.3% vs TC avg
§102
28.0%
-12.0% vs TC avg
§112
2.5%
-37.5% vs TC avg
Black line = Tech Center average estimate • Based on career data from 941 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claim(s) 1-12 is/are rejected under 35 U.S.C. 102(a)(2) as being anticipated by Greco et al (WO 2021/148323). A photoelectric conversion element comprising: a photoelectric conversion portion (Fig.2B (105a- active surface performs photoelectric conversion) and [page 9, lines: 10-20; page 11, lines:20-25]); and a proton beam shielding layer (Fig.2B (215a- protective material) and [page 11, line:5- page 13, line:25]) on the photoelectric conversion portion (Fig.2B (105a- active surface performs photoelectric conversion) and [page 9, lines: 10-20]) in direct contact with an electrode (Fig.2B (100) and page 9, lines: 1-10- Applicant’s remarks (page 5, dated 5/13/26) also admit that Greco’s 100 has a top electrode usually bus bars having an active window in the center; this is understood in the art as a conventional solar cell configuration- electrodes are typically on the top and bottom of the pn junctions) of the photoelectric conversion portion (Fig.2B (105a- active surface performs photoelectric conversion) and [page 9, lines: 10-20; page 11, lines:20-25]), wherein the proton beam shielding layer (Fig.2B (215a- protective material) and [page 11, line:5- page 13, line:25]) and shields the photoelectric conversion portion from a proton beam [page 9, line: 31- page 10, line:25], wherein a product of an electron density [electron density of :aluminum oxide is 1.18 x1024 (e/cm3); tantalum oxide is 2 x1024 (e/cm3); titanium oxide is 1.216 x1024 (e/cm3); cerium oxide is 2.3 x1024 (e/cm3)] ; and a film thickness (Fig.3- teaching thicknesses from greater than 2 um to 50 um) of the proton beam shielding layer is 5 x 1020 (cm-2) or more (mathematically this calculates for most of the insulating materials with thicknesses greater than 4 um which is taught- Fig.3). The photoelectric conversion element according to claim 1, wherein the photoelectric conversion portion (Fig.1A-1C/2AS-2D (105a- active surface performs photoelectric conversion) and [page 9, lines: 10-20]) is formed on a substrate [page 1, lines: 5-15/ page 11, lines: 15-20]. . The photoelectric conversion element according to claim 1, wherein the photoelectric conversion portion includes a semiconductor substrate [page 1, lines: 5-15/ page 11, lines: 15-20]. The photoelectric conversion element according to claim 1 , wherein the proton beam shielding layer is a layer including a first material selected from one or more of A12O3, Y203, ZrO2, MgO, HfO2, Bi2O3, TiO2, ZnO, In2O3, SnO2, Nb2O5, and Ta205 [page 11, lines: 20-30]. The photoelectric conversion element according to claim 4, wherein the proton beam shielding layer is stacked films in which layers including two or more types of the first material are stacked (Fig.2D (215a and 215b) and [page 12, lines: 14-35]). The photoelectric conversion element according to claim 1, further comprising a heat emission layer formed on the proton beam shielding layer (Fig.2D (215b) and [page 12, lines: 15-25]). 7. The photoelectric conversion element according to claim 6, wherein the heat emission layer is a layer including a second material selected from at least one of SiO2 and A12O3 (Fig.2D (215b) and [page 12, lines: 15-25]). 8. The photoelectric conversion element according to claim 7, wherein the heat emission layer has a thickness of 210 nm or more (Fig.3- 2um to 50 um). 9. The photoelectric conversion element according to claim 8, wherein the heat emission layer is stacked films in which layers including two types of the second material are stacked (Fig.2D (215a and 215b) and [page 12, lines: 14-35]). 10. The photoelectric conversion element according to claim 9, wherein a thickness of any one of film in stacked films of the heat emission layer is 110 nm or more (Fig.3- 2um to 50 um). 11. A method for manufacturing a photoelectric conversion element including a photoelectric conversion portion (Fig.2B (105a- active surface performs photoelectric conversion) and [page 9, lines: 10-20]), and a proton beam shielding layer (Fig.2B (215a- protective material) and [page 11, line:5- page 13, line:25]) on the photoelectric conversion portion (Fig.2B (105a- active surface performs photoelectric conversion) and [page 9, lines: 10-20]) in direct contact with an electrode (Fig.2B (100) and page 9, lines: 1-10- Applicant’s remarks (page 5, dated 5/13/26) also admit that Greco’s 100 has a top electrode usually bus bars having an active window in the center; this is understood in the art as a conventional solar cell configuration- electrodes are typically on the top and bottom of the pn junctions) of the photoelectric conversion portion (Fig.2B (105a- active surface performs photoelectric conversion) and [page 9, lines: 10-20; page 11, lines:20-25]), wherein the proton beam shielding layer (Fig.2B (215a- protective material) and [page 11, line:5- page 13, line:25]) shields the photoelectric conversion portion from a proton beam [page 9, line: 31- page 10, line:25],forming the proton beam shielding layer (Fig.1A-1C (115- protective material) and [page 9, line:31- page 10, line:25]) having a product of electron density [electron density of :aluminum oxide is 1.18 x1024 (e/cm3); tantalum oxide is 2 x1024 (e/cm3); titanium oxide is 1.216 x1024 (e/cm3); cerium oxide is 2.3 x1024 (e/cm3)] ; and a film thickness (Fig.3- teaching thicknesses from greater than 2 um to 50 um) of the proton beam shielding layer is 5 x 1020 (cm-2) or more (mathematically this calculates for most of the insulating materials with thicknesses greater than 4 um which is taught- Fig.3). 12. The method for manufacturing a photoelectric conversion element according to claim 11, further comprising a step of forming a heat emission layer on the proton beam shielding layer (Fig.2D (215b) and [page 12, lines: 15-25]). Response to Arguments Applicant's arguments filed 5/13/26 have been fully considered but they are not persuasive. Applicant’s arguments focus on Fig.1 of Greco; which shows a resin layer between the upper surface of the solar cell and the shielding layer-Applicant’s arguments do not address Fig.2 of Greco which show the shielding layer 215a in direct contact with the electrode layer. Therefore the claim amendment does not overcome Greco. Applicant then proceeds to argue that Greco does not teach the product of the electron density and thickness amounts to 5 x 1020 (cm-2) or more. This is simply incorrect. The electron densities of the Greco’s shielding materials (electron density is a property of the materials themselves) are listed clearly in the Examiner’s rejection made above. These are constants. The electron density constants when multiplied by the range of numerical thicknesses taught by Greco; calculate out to greater than 5 x 1020 (cm-2) for all materials explained above for thicknesses greater than 4 um as explained above in the Examiner’s rejection. Greco teaches the film can have a thickness of 2 to 50 um (Fig.3). The art teaches this range but it may be understood as a line segment with each point being it’s own value. The values of 2-50 um multiplied by the electron density of the materials taught in the shielding layer (aluminum oxide is 1.18 x1024 (e/cm3); tantalum oxide is 2 x1024 (e/cm3); titanium oxide is 1.216 x1024 (e/cm3); cerium oxide is 2.3 x1024 (e/cm3) as an approximation- any thickness greater than 4 um of the materials listed above all anticipate the Applicant’s claim because each one of those thicknesses would multiply out to be 5 x 1020 (cm-2) or more. To properly anticipate Applicant’s claim language- Greco need only teach one thickness for one material! Instead, Greco teaches it for each material for every thickness between 4-50 um- these all would calculate out to 5 x 1020 (cm-2) or more. This is not a matter of implicitness- it is a matter of multiplication. The claim language requires a mathematical calculation (product=multiplication) which needs to be solved to a value greater than 5 x 1020 (cm-2). The calculation itself does not need to be disclosed by Greco in order to properly anticipate the claims as the arguments purport; it requires only the Examiner to multiply the two values together to produce the necessary result= 5 x 1020 (cm-2) or more. The Examiner also notes that Greco teaches that the proton shielding layer materials may be effective relative to the proton energy itself- that the higher the potential proton energy; the thicker the shielding layer needs to be to effectively block the protons. The Applicant’s claim is fully anticipated by Greco. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Greco et al (CN 115004381; US 20230039806; US 12396270) and Horiguchi et al (WO 2022260140; CN 117461147; EP 4354516; US 20240274730) teach similar structures/ methods. Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to LAURA M MENZ whose telephone number is (571)272-1697. The examiner can normally be reached Monday-Friday 7:00-3:30. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Steven Gauthier can be reached at 571-270-0373. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /LAURA M MENZ/Primary Examiner, Art Unit 2813 5/14/26
Read full office action

Prosecution Timeline

Sep 27, 2023
Application Filed
Nov 26, 2025
Non-Final Rejection mailed — §102
Apr 16, 2026
Response Filed
May 13, 2026
Examiner Interview (Telephonic)
May 18, 2026
Final Rejection mailed — §102 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
88%
Grant Probability
96%
With Interview (+8.5%)
2y 5m (~0m remaining)
Median Time to Grant
Moderate
PTA Risk
Based on 941 resolved cases by this examiner. Grant probability derived from career allowance rate.

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