DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Claim Rejections - 35 USC § 102
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention.
Claim(s) 1-12 is/are rejected under 35 U.S.C. 102(a)(2) as being anticipated by Greco et al (WO 2021/148323).
A photoelectric conversion element comprising:
a photoelectric conversion portion (Fig.1A-1C (105a- active surface performs photoelectric conversion) and [page 9, lines: 10-20]); and
a proton beam shielding layer (Fig.1A-1C (115- protective material) and [page 9, line:31- page 10, line:25]) that is formed on the photoelectric conversion portion (Fig.1A-1C (105a- active surface performs photoelectric conversion) and [page 9, lines: 10-20]) and shields the photoelectric conversion portion from a proton beam [page 9, line: 31- page 10, line:25], wherein a product of an electron density [electron density of :aluminum oxide is 1.18 x1024 (e/cm3); tantalum oxide is 2 x1024 (e/cm3); titanium oxide is 1.216 x1024 (e/cm3); cerium oxide is 2.3 x1024 (e/cm3)] ; and a film thickness (Fig.3- teaching thicknesses from greater than 2 um to 50 um) of the proton beam shielding layer is 5 x 1020 (cm-2) or more (mathematically this calculates for most of the insulating materials with thicknesses greater than 4 um which is taught- Fig.3).
The photoelectric conversion element according to claim 1, wherein the photoelectric conversion portion (Fig.1A-1C (105a- active surface performs photoelectric conversion) and [page 9, lines: 10-20]) is formed on a substrate (Fig.1 (100)) .
The photoelectric conversion element according to claim 1, wherein the photoelectric conversion portion includes a semiconductor substrate [page 1, lines: 5-15/ page 11, lines: 15-20].
The photoelectric conversion element according to claim 1 , wherein the proton beam shielding layer is a layer including a first material selected from one or more of A12O3, Y203, ZrO2, MgO, HfO2, Bi2O3, TiO2, ZnO, In2O3, SnO2, Nb2O5, and Ta205 [page 11, lines: 20-30].
The photoelectric conversion element according to claim 4, wherein the proton beam shielding layer is stacked films in which layers including two or more types of the first material are stacked (Fig.2D (215a and 215b) and [page 12, lines: 14-35]).
The photoelectric conversion element according to claim 1, further comprising a heat emission layer formed on the proton beam shielding layer (Fig.2D (215b) and [page 12, lines: 15-25]).
7. The photoelectric conversion element according to claim 6, wherein the heat emission layer is a layer including a second material selected from at least one of SiO2 and A12O3 (Fig.2D (215b) and [page 12, lines: 15-25]).
8. The photoelectric conversion element according to claim 7, wherein the heat emission layer has a thickness of 210 nm or more (Fig.3- 2um to 50 um).
9. The photoelectric conversion element according to claim 8, wherein the heat emission layer is stacked films in which layers including two types of the second material are stacked (Fig.2D (215a and 215b) and [page 12, lines: 14-35]).
10. The photoelectric conversion element according to claim 9, wherein a thickness of any one of film in stacked films of the heat emission layer is 110 nm or more (Fig.3- 2um to 50 um).
11. A method for manufacturing a photoelectric conversion element including a photoelectric conversion portion (Fig.1A-1C (105a- active surface performs photoelectric conversion) and [page 9, lines: 10-20]), and a proton beam shielding layer (Fig.1A-1C (115- protective material) and [page 9, line:31- page 10, line:25]) that is formed on the photoelectric conversion portion (Fig.1A-1C (105a- active surface performs photoelectric conversion) and [page 9, lines: 10-20]) and shields the photoelectric conversion portion from a proton beam [page 9, line: 31- page 10, line:25], the method comprising:
forming the photoelectric conversion portion (Fig.1A-1C (105a- active surface performs photoelectric conversion) and [page 9, lines: 10-20]); and
forming the proton beam shielding layer (Fig.1A-1C (115- protective material) and [page 9, line:31- page 10, line:25]) having a product of electron density [electron density of :aluminum oxide is 1.18 x1024 (e/cm3); tantalum oxide is 2 x1024 (e/cm3); titanium oxide is 1.216 x1024 (e/cm3); cerium oxide is 2.3 x1024 (e/cm3)] ; and a film thickness (Fig.3- teaching thicknesses from greater than 2 um to 50 um) of the proton beam shielding layer is 5 x 1020 (cm-2) or more (mathematically this calculates for most of the insulating materials with thicknesses greater than 4 um which is taught- Fig.3).
12. The method for manufacturing a photoelectric conversion element according to claim 11, further comprising a step of forming a heat emission layer on the proton beam shielding layer (Fig.2D (215b) and [page 12, lines: 15-25]).
Conclusion
The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Greco et al (CN 115004381; US 20230039806; US 12396270) and Horiguchi et al (WO 2022260140; CN 117461147; EP 4354516; US 20240274730) teach similar structures/ methods.
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/LAURA M MENZ/Primary Examiner, Art Unit 2813
11/23/25