Prosecution Insights
Last updated: July 17, 2026
Application No. 18/312,825

CARBOXYLATE SALT, PHOTORESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN USING THE PHOTORESIST COMPOSITION

Non-Final OA §102
Filed
May 05, 2023
Priority
Nov 30, 2022 — RE 10-2022-0165094
Examiner
CHACKO DAVIS, DABORAH
Art Unit
1737
Tech Center
1700 — Chemical & Materials Engineering
Assignee
Samsung Electronics Co., Ltd.
OA Round
2 (Non-Final)
72%
Grant Probability
Favorable
2-3
OA Rounds
1m
Est. Remaining
92%
With Interview

Examiner Intelligence

Grants 72% — above average
72%
Career Allowance Rate
707 granted / 983 resolved
+6.9% vs TC avg
Strong +20% interview lift
Without
With
+20.5%
Interview Lift
resolved cases with interview
Typical timeline
3y 4m
Avg Prosecution
39 currently pending
Career history
1021
Total Applications
across all art units

Statute-Specific Performance

§101
0.4%
-39.6% vs TC avg
§103
48.0%
+8.0% vs TC avg
§102
22.8%
-17.2% vs TC avg
§112
17.0%
-23.0% vs TC avg
Black line = Tech Center average estimate • Based on career data from 983 resolved cases

Office Action

§102
DETAILED ACTION The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1-2, 4-10, and 12-20, is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by U. S. Patent Application Publication No. 2022/0066319 (hereinafter referred to as Hatakeyama). Hatakeyama, in the abstract, [0018], [0034], [0054],[0055], [0095], [0097], and [0105], discloses a photoresist composition that includes a polymer main chain (base polymer, claimed base resin), an acid generator, a salt (quencher, claimed carboxylate salt) that includes a carboxylate ion as the anion moiety and a sulfonium ion as the cation moiety, and an organic solvent, wherein the salt is a quencher and suppresses acid diffusion (acts as a quenching base) and the salt has the following general formula, see below, PNG media_image1.png 119 238 media_image1.png Greyscale , wherein R4 is a hydrocarbyl group that includes the sulfonamide group, as disclosed on page 45, of Hatakeyama, see below, PNG media_image2.png 225 101 media_image2.png Greyscale , and is the same structure wherein the claimed A11 is the aromatic group (C6H5-aryl group), claimed R12 is hydrogen, claimed R11 is CF3 , claimed a11 and a12 include zero, claimed n11 and n12 include 1, and the claimed M+ is the sulfonium cation, and is the same structure and composition as recited in claims 1-2, 4-7, 12, 14-15, and is the same structure as the 2nd structure in the first row, recited under Group I in claim 13. Hatakeyama, in [0113], discloses the cation moiety of the salt includes a sulfonium cation, and on page 56, on page 57, and on page 60, see below, PNG media_image3.png 219 237 media_image3.png Greyscale , PNG media_image4.png 214 205 media_image4.png Greyscale , PNG media_image5.png 217 198 media_image5.png Greyscale , PNG media_image6.png 228 254 media_image6.png Greyscale and is the same as the sulfonium cations recited in claims 8-10. Hatakeyama, in [0005], and [0115], discloses that the salt (sulfonium salt with carboxylate anion) can be used as a photoacid generator i.e. it is photodegradable and can generate acid upon exposure to light (claim 16). Hatakeyama, in [0034], discloses that the resist composition can further comprise another quencher (claim 17). Hatakeyama, in Table 1, disclose that the quencher can be in the composition in an amount of 4.86 parts by mass based on 100 parts by mass of the base polymer (claim 18). Hatakeyama, in [0181]-[0188], discloses that the photoresist composition is applied onto a substrate to form a resist film that is subjected to selective exposure to high energy radiation such as DUV, or EUV or electron beam (EB), and then developed to form a resist pattern on the substrate (claims 19-20). Allowable Subject Matter Claims 3, and 11, are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Response to Arguments Applicant’s arguments, see Remarks, filed, April 16, 2026, with respect to the rejection(s) of claim(s) 1-20 under 35 U.S.C. 102(a)(1), made in the previous office action have been fully considered and are persuasive. Therefore, the rejection has been withdrawn. However, upon further consideration, a new ground(s) of rejection is made over pending claims, see paragraph no. 3, above. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to Daborah Chacko-Davis whose telephone number is (571) 272-1380. The examiner can normally be reached on 9:30AM-6:00PM EST Mon-Fri. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Mark F. Huff can be reached on (571) 272-1385. The fax phone number for the organization where this application or proceeding is assigned is 571-272-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /DABORAH CHACKO-DAVIS/Primary Examiner, Art Unit 1737 May 28, 2026.
Read full office action

Prosecution Timeline

Show 2 earlier events
Feb 15, 2026
Interview Requested
Feb 26, 2026
Examiner Interview Summary
Feb 26, 2026
Applicant Interview (Telephonic)
Apr 16, 2026
Response Filed
Jun 02, 2026
Non-Final Rejection mailed — §102
Jul 06, 2026
Interview Requested
Jul 13, 2026
Applicant Interview (Telephonic)
Jul 13, 2026
Examiner Interview Summary

Precedent Cases

Applications granted by this same examiner with similar technology

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Patent 12666784
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Patent 12663710
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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

2-3
Expected OA Rounds
72%
Grant Probability
92%
With Interview (+20.5%)
3y 4m (~1m remaining)
Median Time to Grant
Moderate
PTA Risk
Based on 983 resolved cases by this examiner. Grant probability derived from career allowance rate.

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