Prosecution Insights
Last updated: October 02, 2026

Examiner: CHACKO DAVIS, DABORAH

Tech Center 1700 • Art Units: 1722 1737 1795

This examiner grants 72% of resolved cases

Analysis

Daborah Chacko Davis is an examiner in Tech Center 1700 and Art Unit 1722. The data includes 996 resolved cases. The allowance rate is 72.1 percent, which indicates the frequency of granted patents. The median days to allowance is 1228, serving as a benchmark for the duration of the grant process. This 1228 day figure is a key timing metric for applicants.

The interview lift is 20.6 percent. This figure suggests that an interview is associated with a 20.6 percent change in the probability of allowance. With 996 resolved cases, this lift provides a look at the impact of verbal communication. The 72.1 percent allowance rate and the 1228 median days to allowance are the primary figures for developing a prosecution strategy.

The Art Unit 1722 designation and the Tech Center 1700 location form the basis for the current statistical profile. The 72.1 percent allowance rate provides a baseline for success, while the 20.6 percent interview lift highlights the impact of direct negotiation. These 996 resolved cases define the current data for this examiner.

Written from this page's own data; every figure is computed from USPTO records and verified before publication.

Performance Statistics

72.1%
Allow Rate
+7.1% vs TC avg
1,031
Total Applications
+20.6%
Interview Lift
1228
Avg Prosecution Days
Based on 996 resolved cases, 2023–2026

Rejection Statute Breakdown

0.7%
§101 Eligibility
28.4%
§102 Novelty
36.1%
§103 Obviousness
25.1%
§112 Clarity

Currently Pending Office Actions

App #TitleStatusAssignee
18170591 TRANSFER FILM, MANUFACTURING METHOD FOR LAMINATE, MANUFACTURING METHOD FOR CIRCUIT WIRE, AND MANUFACTURING METHOD FOR ELECTRONIC DEVICE Non-Final OA FUJIFILM Corporation
18428227 HARDMASK COMPOSITION, HARDMASK LAYER AND METHOD OF FORMING PATTERNS Non-Final OA SAMSUNG SDI CO., LTD.
17753110 POSITIVE TONE DEVELOPMENT OF CVD EUV RESIST FILMS Final Rejection Lam Research Corporation
18404737 METHOD OF INCREASING CROSSLINKING DENSITY OF PHOTORESIST Non-Final OA TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
18137288 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Final Rejection TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
18361298 DOSE REDUCTION BOTTOM ANTI-REFLECTIVE COATING FOR METALLIC PHOTORESIST Non-Final OA Taiwan Semiconductor Manufacturing Co., Ltd.
18361609 EUV RETICLE WITH EMBEDDED PROCESS ASSISTANCE LAYER AND METHOD OF MANUFACTURING THE EUV RETICLE Final Rejection Taiwan Semiconductor Manufacturing Co., Ltd.
18093121 CHARACTERIZATION OF PHOTOSENSITIVE MATERIALS Non-Final OA Applied Materials, Inc.
18470491 METHOD FOR FORMING RESIST PATTERN, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, AND STORAGE MEDIUM Non-Final OA Tokyo Electron Limited
17943729 Hybrid Development of EUV Resists Non-Final OA Tokyo Electron Limited
17912202 SYSTEMS AND METHODS FOR FORMING STRUCTURES ON A SURFACE Final Rejection ASML HOLDING N.V.
18294072 PELLICLE FOR EXPOSURE CAPABLE OF EASY ADJUSTMENT OF ATMOSPHERIC PRESSURE Non-Final OA Shin-Etsu Chemical Co., Ltd.
18376499 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS Non-Final OA Shin-Etsu Chemical Co., Ltd.
18308670 PHOTOMASK STRUCTURE Final Rejection United Microelectronics Corp.
18350480 Wafer Bow Mitigation Non-Final OA The University of Queensland
18435001 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION Non-Final OA JSR CORPORATION

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