Prosecution Insights
Last updated: July 17, 2026
Application No. 18/318,755

Through-Hole Structures for Improved Power Performance

Non-Final OA §102
Filed
May 17, 2023
Examiner
NGUYEN, KHIEM D
Art Unit
Tech Center
Assignee
Intel Corporation
OA Round
1 (Non-Final)
86%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
98%
With Interview

Examiner Intelligence

Grants 86% — above average
86%
Career Allowance Rate
1911 granted / 2229 resolved
+25.7% vs TC avg
Moderate +12% lift
Without
With
+12.5%
Interview Lift
resolved cases with interview
Typical timeline
2y 3m
Avg Prosecution
54 currently pending
Career history
2272
Total Applications
across all art units

Statute-Specific Performance

§101
0.2%
-39.8% vs TC avg
§103
69.9%
+29.9% vs TC avg
§102
17.2%
-22.8% vs TC avg
§112
9.0%
-31.0% vs TC avg
Black line = Tech Center average estimate • Based on career data from 2229 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Specification The title of the invention is not descriptive. A new title is required that is clearly indicative of the invention to which the claims are directed. The following title is suggested: Package substrate having through-hole structures for improved power performance and method of forming the same. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1-20 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Cheah et al. (U.S. Pub. 2020/0168559). In re claim 1, Cheah discloses a package substrate 400 comprising surface layers (430,432,434) with a power region for coupling with a semiconductor device 462 (see paragraph [0055] and fig. 4); base layers 458 (see paragraph [0056] and fig. 4); a core layer 410 with a top surface and a bottom surface (see paragraph [0056] and fig. 4), wherein the core layer 410 is disposed between the surface layers (430,432,434) and the base layers 458 (see paragraphs [0055], [0056] and fig. 4); and a plurality of through hole vias (420,422,424,426) providing direct couplings between the surface layers (430,432,434) with the base layers 458 (see paragraph [0054] and fig. 4), wherein the plurality of through hole vias (420,422,424,426) are located in the power region below the semiconductor device 462 positioned over the surface layers (430,432,434) (see paragraphs [0054], [0055] and fig. 4). PNG media_image1.png 445 769 media_image1.png Greyscale In re claim 2, as applied to claim 1 above, Cheah discloses wherein the surface layers (430,432,434) comprise a first plurality of micro vias (vias located inside the surface layers (430,432,434)) coupling the surface layers to each other (see paragraph [0055] and fig. 4). In re claim 3, as applied to claim 1 above, Cheah discloses wherein the base layers 458 comprise a second plurality of micro vias (vias located in the base layers 458) coupling the base layers to each other (see paragraph [0056] and fig. 4). In re claim 4, as applied to claim 1 above, Cheah discloses wherein the through hole vias 426 extend through the top surface of the core layer 410 to the surface layers (430,432,434) and extend below the bottom surface of the core layer 410 to the base layers 458 (see paragraphs [0055], [0056] and fig. 4). In re claim 5, as applied to claim 4 above, Cheah discloses wherein the package substrate further comprises a first plurality of plane layers (upper 414) positioned between the top surface of the core layer 410 and the surface layers (430,432,434) (see paragraph [0053] and fig. 4). In re claim 6, as applied to claim 5 above, Cheah discloses wherein the first plurality of plane layers (upper 414) is without micro vias (see paragraph [0053] and fig. 4). In re claim 7, as applied to claim 4 above, Cheah discloses wherein the package substrate further comprises a second plurality of plane layers (lower 414) positioned between the bottom surface of the core layer 410 and the base layers 458 (see paragraph [0053] and fig. 4). In re claim 8, as applied to claim 7 above, Cheah discloses wherein the second plurality of plane layers (lower 414) are without micro vias (see paragraph [0053] and fig. 4). In re claim 9, as applied to claim 5 above, Cheah discloses wherein the through hole vias (420,422,424,426) couple one or more of the first plurality of plane layers (upper 414) with the surface layers (430,432,434) (see paragraphs [0053], [0056] and fig. 4). In re claim 10, as applied to claim 7 above, Cheah discloses wherein the through hole vias (420,422,424,426) couple one or more of the second plurality of plane layers (lower 424) with the base layers 458 (see paragraphs [0053, [0054], [0056] and fig. 4). In re claim 11, as applied to claim 1 above, Cheah discloses wherein one or more of the through hole vias 426 provide a power coupling between the surface layers (430,432,434) and the base layers 458 (see paragraph [0054] and fig. 4). In re claim 12, as applied to claim 1 above, Cheah discloses wherein one or more of the through hole vias 420 provide a ground coupling between the surface layers (430,432,434) and the base layers 458 (see paragraph [0054] and fig. 4). In re claim 13, Cheah discloses a method comprising providing a core layer 410 for a package substrate 400, wherein the core layer 410 has a top surface and a bottom surface (see paragraph [0055] and fig. 4); forming a first plurality of plane layers (upper 414) on the top surface of the core layer 410 (see paragraph [0053] and fig. 4); forming a second plurality of plane layers (lower 414) on the bottom surface of the core layer 410 (see paragraph [0053] and fig. 4); forming a plurality of through vias (420, 422, 424, 426) through the first plurality of plane layers (upper 414), the core layer 410, and the second plurality of plane layers (lower 414), wherein the first and second plurality of plane layers are formed without micro vias (see paragraphs [0053], [0054] and fig. 4); forming surface layers (430, 432, 434) on the first plurality of plane layers; forming a first plurality of micro vias (vias located in the surface layers (430, 432, 434)) n the surface layers; forming base layers 458 on the second plurality of plane layers; and forming a second plurality of micro vias (vias located in the base layers 458) in the base layers (see paragraph [0055] and fig. 4). In re claim 14, as applied to claim 13 above, Cheah discloses wherein the plurality of through hole vias (420,422,424,426) electrically couples the surface layers (430, 432, 434) to the base layers 458 (see paragraphs [0054], [0055] and fig. 4). In re claim 15, as applied to claim 13 above, Cheah discloses wherein the method further comprises coupling a semiconductor device 462 to the surface layers (430, 432, 434), wherein the plurality of through vias (420, 422, 424, 426) provides power and ground couplings for the semiconductor device 462 coupled to the surface layers (430, 432, 434) (see paragraphs [0054], [0057] and fig. 4). In re claim 16, Cheah discloses an electronic component 400 comprising a semiconductor device 462 (see paragraph [0057] and fig. 4); a package substrate 401 comprising surface layers (430, 432, 434) with a first plurality of micro vias (vias located in the surface layers (430, 432, 434)) for coupling with each other and to the semiconductor device 462 (see paragraphs [0056], [0057] and fig. 4), wherein the semiconductor device 462 is positioned over the surface layers (430, 432, 434) (see paragraphs [0056], [0057] and fig. 4); a core layer 410 (see paragraph [0055] and fig. 4); base layers 458 with a second plurality of micro vias (vias located in the base layers 458)) for coupling with each other (see paragraph [0056] and fig. 4); a first plurality of plane layers (upper 414) without micro vias positioned between the surface layers (430, 432, 434) and the core layer 410 (see paragraphs [0053], [0055] and fig. 4); a second plurality of plane layers (lower 414) without micro vias positioned between the core layer 410 and the base layers 458 (see paragraphs [0053], [0055] and fig. 4); and a plurality of through hole vias (420, 422, 424, 426) located below the semiconductor device 462 that passes through the first and second plurality of plane layers and the core layer 410 and couples the surface layers (430, 432, 434) with the base layers 458 (see paragraphs [0054], [0055] and fig. 4). In re claim 17, as applied to claim 16 above, Cheah discloses wherein the through hole vias (420, 422, 424, 426) couple one or more of the first plurality of plane layers (upper 414) with the surface layers 458 (see paragraphs [0054], [0055] and fig. 4). In re claim 18, as applied to claim 16 above, Cheah discloses wherein the through hole vias (420, 422, 424, 426) couple one or more of the second plurality of plane layers (lower 414) with the base layers 458 (see paragraphs [0053], [0056] and fig. 4). In re claim 19, as applied to claim 16 above, Cheah discloses wherein one or more of the through hole vias 426 provide power couplings between the semiconductor device 462 and the base layers (430, 432, 434) (see paragraphs [0054], [0057] and fig. 4). In re claim 20, as applied to claim 16 above, Cheah discloses wherein one or more of the through hole vias 420 provide ground couplings between the semiconductor device 462 and the base layers 458 (see paragraphs [0054], [0057] and fig. 4). Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Ong et al. (U.S. Pub. 2018/0366423) discloses a package substrate comprising a surface layer (upper 401) with a power region for coupling with a semiconductor device 1002 (see paragraph [0035] and fig. 10); base layer (lower 401); a core layer 308 with a top surface and a bottom surface (see paragraph [0029] and fig. 10), wherein the core layer 308 is disposed between the surface layer and the base layer; and a plurality of through hole vias 406 providing direct couplings between the surface layer with the base layer (see paragraph [0029] and fig. 4). Ko (U.S. Pub. 2011/0088937) discloses a package substrate comprising surface layers 105 (see paragraph [0055] and fig. 32); base layers 112 (see paragraph [0055] and fig. 32); a core layer 101 with a top surface and a bottom surface, wherein the core layer 101 is disposed between the surface layers 105 and the base layers 112 (see paragraph [0057] and fig. 32); and a plurality of through hole vias 102 providing direct couplings between the surface layers 105 with the base layers 112 (see paragraph [0058] and fig. 32). Any inquiry concerning this communication or earlier communications from the examiner should be directed to KHIEM D NGUYEN whose telephone number is (571)272-1865. The examiner can normally be reached Monday-Friday 8:00 AM - 6:00 PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, N. Drew Richards can be reached at (571) 272-1736. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /KHIEM D NGUYEN/Primary Examiner, Art Unit 2892
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Prosecution Timeline

May 17, 2023
Application Filed
Oct 03, 2023
Response after Non-Final Action
Jun 25, 2026
Non-Final Rejection mailed — §102 (current)

Precedent Cases

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
86%
Grant Probability
98%
With Interview (+12.5%)
2y 3m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 2229 resolved cases by this examiner. Grant probability derived from career allowance rate.

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