Prosecution Insights
Last updated: July 17, 2026
Application No. 18/320,102

MICROELECTRONIC DEVICE PACKAGE WITH INTEGRAL PASSIVE COMPONENT

Non-Final OA §102§103
Filed
May 18, 2023
Priority
May 20, 2022 — provisional 63/344,383
Examiner
PHAM, LONG
Art Unit
2897
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Texas Instruments Incorporated
OA Round
1 (Non-Final)
92%
Grant Probability
Favorable
1-2
OA Rounds
0m
Est. Remaining
97%
With Interview

Examiner Intelligence

Grants 92% — above average
92%
Career Allowance Rate
1515 granted / 1655 resolved
+23.5% vs TC avg
Moderate +6% lift
Without
With
+5.5%
Interview Lift
resolved cases with interview
Typical timeline
2y 3m
Avg Prosecution
38 currently pending
Career history
1688
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
56.5%
+16.5% vs TC avg
§102
24.1%
-15.9% vs TC avg
§112
9.4%
-30.6% vs TC avg
Black line = Tech Center average estimate • Based on career data from 1655 resolved cases

Office Action

§102 §103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions Applicant’s election without traverse of claims 1-16 and 17-22 in the reply filed on 4/1/26 is acknowledged. Also, the applicant fails to respond to the species restriction of restriction dated 2/2/26, for examination purposes, it is assumed that the elected claims 1-16 and 17-22 read on the first embodiment of figs. 1A-1B and 2A-2B. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1, 3, 4, 5, 6, 9, and 10 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Meyer et al. (US pub 20180286799). With respect to claim 1, Meyer et al. teach a microelectronic device package, comprising (see figs. 1-5, particularly fig. 1F and associated text): a multilayer package substrate 110 comprising trace level conductors 130 spaced by dielectric material, 1221, 1222 the multilayer package substrate having a device side surface (top) and an opposing board side surface (bottom), and having a recess (area where 176 occupies) extending from the device side surface and exposing selected ones of the trace level conductors beneath the device side surface of the multilayer package substrate; a semiconductor die 140 mounted to the device side surface of the multilayer package substrate and coupled to the trace level conductors; a passive component 176 mounted to the selected ones of the trace level conductors exposed in the recess in the multilayer package substrate; and mold compound 188 covering the semiconductor die, the passive component, and a portion of the multilayer package substrate. With respect to claim 3, Meyer et al. teach the passive component comprises a two-terminal device 172,174. See fig. 1F and associated text. With respect to claim 4, Meyer et al. teach the passive component comprises a capacitor, an inductor, a coil, a resistor, a diode or a sensor. See para 0017. With respect to claim 5, Meyer et al. teach the passive component comprises a capacitor. See para 0017. With respect to claim 6, Meyer et al. teach the capacitor has a capacitor thickness that is greater than a thickness of the semiconductor die. See fig. 1F and associated text. With respect to claim 9, Meyer et al. teach the capacitor has a capacitor thickness that is greater than a thickness of the mold compound over the device side surface of the multilayer package substrate. See fig. 1F and associated text. With respect to claim 10, Meyer et al. teach the multilayer package substrate comprises the trace level conductors 126 spaced from one another by the dielectric material, and further comprises connection level conductors 124 between layers of the trace level conductors, the connection level conductors extending through the dielectric material to couple the trace level conductors. See fig. 1F and associated text. Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 2, 7, 8, 11, 12, 13, and 16 is/are rejected under 35 U.S.C. 103 as being unpatentable over Meyer et al. (US pub 20180286799). With respect to claim 2, Meyer et al. teach the semiconductor die comprises of power device (see para 0035) but fail to teach the power device is power FET device. However, use of power FET device is well-known in semiconductor art. With respect to claim 7, Meyer et al. fail to teach the range for the thickness for capacitor. However, it would have been obvious to one of ordinary skill in the art of making semiconductor devices to determine the workable or optimal value or range for the thickness for capacitor through routine experimentation and optimization to obtain optimal or desired device performance because there is no evidence indicating that claimed range is critical or produces any unexpected results and it has been held that it is not inventive to discover the optimum or workable ranges of a result-effective variable within given prior art conditions by routine experimentation. See MPEP 2144.05. With respect to claim 8, Meyer et al. fail to teach the ranges for the length and width for capacitor. However, it would have been obvious to one of ordinary skill in the art of making semiconductor devices to determine the workable or optimal value or range for the length and width for capacitor through routine experimentation and optimization to obtain optimal or desired device performance because there is no evidence indicating that claimed ranges are critical or produce any unexpected results and it has been held that it is not inventive to discover the optimum or workable ranges of a result-effective variable within given prior art conditions by routine experimentation. See MPEP 2144.05. With respect to claim 11, Meyer et al. fail teach the dielectric material comprises Ajinomoto build-up film (ABF). However, the use of Ajinomoto build-up film (ABF) as dielectric material is well-known in semiconductor art. With respect to claim 12, Meyer et al. fail teach the dielectric material comprises resin epoxy. However, the use of resin epoxy as dielectric material is well-known in semiconductor art. With respect to claim 13, Meyer et al. teach the package substrate comprises an embedded trace substrate but fail teach the dielectric material comprises prepreg material However, the use of prepreg material as dielectric material is well-known in semiconductor art. With respect to claim 16, Meyer et al. fail teach the microelectronic device package further comprises a quad flat no-lead (QFN) package. However, the use of quad flat no-lead (QFN) package is well-known in semiconductor art. Claim(s) 17-20 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Meyer et al. (US pub 20180286799). With respect to claim 17, Meyer et al. teach a microelectronic device package, comprising (see figs. 1-5, particularly figs. 2C-2E and associated text): a package substrate 200 having a device side surface (top) and an opposing board side surface (bottom), and having a portion configured for mounting a passive component 176 on the device side surface; a semiconductor die 140 mounted to the device side surface of the package substrate; mold compound 110 covering the device side surface of the package substrate and covering the semiconductor die; a recess 132 extending into the mold compound exposing the portion of the package substrate configured for mounting the passive component on the device side surface; and a passive component 176 mounted to the portion of the package substrate in the recess in the mold compound, the passive component coupled to the semiconductor die. With respect to claim 18, Meyer et al. teach solder fill material deposited in the recess in the mold compound and surrounding the passive component. See fig. 2C-2E and associated text. With respect to claim 18, Meyer et al. teach solder fill material deposited in the recess in the mold compound and surrounding the passive component. See fig. 2C-2E and associated text. With respect to claim 19, Meyer et al. teach the passive component has a thickness greater than the thickness of the mold compound. See fig. 2C-2E and associated text. With respect to claim 20, Meyer et al. teach the passive component comprises a capacitor, an inductor, a coil, a resistor, a diode or a sensor. See para 0017. Claim(s) 21 is/are rejected under 35 U.S.C. 103 as being unpatentable over Meyer et al. (US pub 20180286799). With respect to claim 8, Meyer et al. fail to teach the ranges for the thickness, the length and width for capacitor. However, it would have been obvious to one of ordinary skill in the art of making semiconductor devices to determine the workable or optimal value or range for the thickness, the length and width for capacitor through routine experimentation and optimization to obtain optimal or desired device performance because there is no evidence indicating that claimed ranges are critical or produce any unexpected results and it has been held that it is not inventive to discover the optimum or workable ranges of a result-effective variable within given prior art conditions by routine experimentation. See MPEP 2144.05. Allowable Subject Matter Claims 14-16 and 22 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Examiner’s Cited References The cited references generally show the similar or related structure having a package having a passive device partly embedded in a multi-layer package substrate and a mold covering a semiconductor device and the passive device as presently claimed by applicant. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to LONG PHAM whose telephone number is (571)272-1714. The examiner can normally be reached Mon-Friday. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Jacob Choi can be reached at 469-295-9060. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. LONG . PHAM Examiner Art Unit 2823 /LONG PHAM/Primary Examiner, Art Unit 2897
Read full office action

Prosecution Timeline

May 18, 2023
Application Filed
Jun 10, 2026
Non-Final Rejection mailed — §102, §103 (current)

Precedent Cases

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
92%
Grant Probability
97%
With Interview (+5.5%)
2y 3m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 1655 resolved cases by this examiner. Grant probability derived from career allowance rate.

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