Prosecution Insights
Last updated: April 19, 2026
Application No. 18/332,270

IMAGE SENSOR

Final Rejection §103
Filed
Jun 09, 2023
Examiner
RAHIM, NILUFA
Art Unit
2893
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Samsung Electronics Co., Ltd.
OA Round
2 (Final)
83%
Grant Probability
Favorable
3-4
OA Rounds
2y 5m
To Grant
82%
With Interview

Examiner Intelligence

Grants 83% — above average
83%
Career Allow Rate
374 granted / 451 resolved
+14.9% vs TC avg
Minimal -1% lift
Without
With
+-1.2%
Interview Lift
resolved cases with interview
Typical timeline
2y 5m
Avg Prosecution
38 currently pending
Career history
489
Total Applications
across all art units

Statute-Specific Performance

§101
0.1%
-39.9% vs TC avg
§103
44.5%
+4.5% vs TC avg
§102
28.7%
-11.3% vs TC avg
§112
21.1%
-18.9% vs TC avg
Black line = Tech Center average estimate • Based on career data from 451 resolved cases

Office Action

§103
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Acknowledgement This office action is in response to the communication filed on 11/24/2025. Claims 1-20 are currently pending in the present application. Claims 1, 4, 12, 14, and 19 have been amended. Response to Arguments Applicant’s arguments with respect to claim(s) 1-13 and 19-20 have been considered but are moot because the new ground of rejection does not rely on any reference applied in the prior rejection of record for any teaching or matter specifically challenged in the argument. Claims 14-18 are indicated allowable in this Office action as none of the closest art teaches an image sensor including a first width of a first cross section of the first micro lens cut along a diagonal direction toward the second sub-pixel being smaller than a second width of a second cross section of the first micro lens cut along an orthogonal direction toward another first micro lens adjacent thereto, in view all the other limitations cited in claim 14. Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 1-6, 10, 13 and 19 is/are rejected under 35 U.S.C. 103 as being unpatentable over Bonakdar et al. (US 20210242262 A1; hereinafter “Bonakdar”) in view of Kim et al. (US 20220336513 A1; hereinafter “Kim”). In re claim 1, Bonakdar discloses an image sensor (figs. 6-7) comprising: unit pixels 614, 612 (¶31-33), each of the unit pixels including a first sub-pixel 614(1) and a second sub- pixel 612(1) adjacent to the first sub-pixel in a plan view of the image sensor; and a lens array including a first sub-lens area (e.g., area occupied by lens 760(1); hereinafter “Lens_Area1”) on the first sub-pixel 614(1) of each unit pixel (¶35) and a second sub-lens area (e.g., area occupied by lens 770(1); hereinafter “Lens_Area2”) on the second sub-pixel of each unit pixel 612(1) (¶36), the first sub-lens area including a first micro lens 760(1), and the second sub-lens area including a second micro lens 770(1), and the first micro lens 760(1) including a depression 766 defined in a central area thereof (¶35). Bonakdar does not expressly disclose the first micro lens contacting the second micro lens. In the same field of endeavor, Kim discloses an image sensor (figs. 5, 7C, 8C), wherein a first micro lens ML7 contacts a second micro lens ML31 (¶72-73, 104). It would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains to modify the dispositions of the first and second micro lenses such that they contact each other for the purpose of providing image sensors in which sizes and/or areas of micro-lenses respectively covering adjacent pixels respectively adjacent to focus pixels may be different from each other, thereby compensating for a difference between an intensity of a pixel signal output from the adjacent pixel and an intensity of a pixel signal output from a normal pixel (¶4 of Kim). In re claim 2, Bonakdar, as modified by Kim, discloses the image sensor of claim 1. Bonakdar further discloses in (figs. 6-7), the image sensor of claim 1, wherein a size of a planar shape of an outer boundary of the first micro lens 760(1) is greater than a size of a planar shape of an outer boundary of the second micro lens 770(1). In re claim 3, Bonakdar, as modified by Kim, discloses the image sensor of claim 2. Bonakdar further discloses in (figs. 6-7), the image sensor of claim 2, wherein a line extending along a summit of the first micro lens 760(1) defines a closed curve in the plan view of the image sensor. In re claim 4, Bonakdar, as modified by Kim, discloses the image sensor of claim 3. Bonakdar further discloses in (figs. 6-7), the image sensor of claim 3, wherein the first micro lens 760(1) includes a first portion (e.g. a left portion) at one side around the depression 766 and a second portion (e.g. a right portion) at the other side around the depression 766. In re claim 5, Bonakdar, as modified by Kim, discloses the image sensor of claim 4. Bonakdar further discloses in (figs. 6-7), the image sensor of claim 4, wherein a vertical dimension of a summit of each of the first portion and the second portion 762 is equal to or smaller than a vertical dimension of a summit of the second micro lens (i.e., a summit of 770(1)) (¶35). In re claim 6, Bonakdar, as modified by Kim, discloses the image sensor of claim 4. Bonakdar further discloses in (figs. 6-7), the image sensor of claim 4, wherein a shape of the first portion (i.e. a left portion of 760(1)) and a shape of the second portion (i.e. a right portion of 760(1)) are symmetrical with each other with respect to the depression 766. In re claim 10, Bonakdar, as modified by Kim, discloses the image sensor of claim 1. Bonakdar further discloses in (figs. 6-7), the image sensor of claim 1, wherein the lens array includes a base face 659 (¶31) which an outer boundary of the first micro lens 760(1) and an outer boundary of the second micro lens 770(1) are on, the depression 766 is on the base face. In re claim 13, Bonakdar, as modified by Kim, discloses the image sensor of claim 1. Bonakdar further discloses in (figs. 6-7), the image sensor of claim 1, wherein the second micro lens 770(1) is free of a depression in a central area thereof. In re claim 19, Bonakdar discloses an image sensor (figs. 6-7) comprising: a plurality of unit pixels 614, 612 (¶31-33), each of the unit pixels including a first sub-pixel 614 and a second sub-pixel 612 adjacent to the first sub-pixel in a plan view of the image sensor, an area size of a second sub-pixel 612 being smaller than an area size of the first sub-pixel 614 in the plan view; and a lens array 760, 770 including a first sub-lens area (e.g., area occupied by lens 760(1); hereinafter “Lens_Area1”) on the first sub-pixel 614(1) of each unit pixel and a second sub-lens area (e.g., area occupied by lens 770(1); hereinafter “Lens_Area2”) on the second sub-pixel 612(1) of each unit pixel, the first sub-lens area including a plurality of first micro lenses 760(1) having two lenses (¶35), and the second sub-lens area including a second micro lens 770(1), and a number of the second micro lenses 770(1) included in the second sub-lens area being smaller than a number of the plurality of first micro lenses 760(1) included in the first sub-lens area. Bonakdar does not expressly disclose the first micro lens contacting the second micro lens. In the same field of endeavor, Kim discloses an image sensor (figs. 5, 7C, 8C), wherein a first micro lens ML7 contacts a second micro lens ML31 (¶72-73, 104). It would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains to modify the dispositions of the first and second micro lenses such that they contact each other for the purpose of providing image sensors in which sizes and/or areas of micro-lenses respectively covering adjacent pixels respectively adjacent to focus pixels may be different from each other, thereby compensating for a difference between an intensity of a pixel signal output from the adjacent pixel and an intensity of a pixel signal output from a normal pixel (¶4 of Kim). Claim(s) 7 and 20 is/are rejected under 35 U.S.C. 103 as being unpatentable over Bonakdar in view Kim, as applied to claim 6 and 19 above, respectively and further in view of Hsieh et al. (US 20220271079 A1; hereinafter “Hsieh”). In re claim 7, Bonakdar, as modified by Kim, discloses the image sensor of claim 1. Bonakdar, as modified by Kim, does not expressly disclose wherein curvature radii of cross sections of the first portion, the second portion, and the second micro lens are equal each other. In the same field of endeavor, Hsieh discloses an image sensor (Figs. 12A-12B) wherein curvature radii of cross sections of a first portion 1202A and a second portion 1202A of a first micro lens over a first sub-pixel 202A, and a second micro lens 1202B over a second sub-pixel 202B are equal each other (¶59-60, 22). It would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains to employ the teachings of Hsieh into Bonakdar/Kim to provide for an increase in uniformity of the radiation on the top surface of the sensor elements (¶66 of Hsieh). In re claim 20, Bonakdar, as modified by Kim, discloses the image sensor of claim 19. Bonakdar, as modified by Kim, does not expressly disclose wherein the plurality of first micro lenses and the second micro lens have a same shape and a same size. In the same field of endeavor, Hsieh discloses an image sensor (Figs. 12A-12B), wherein a plurality of first micro lenses 1202A, 1202A over a first sub-pixel 202A and a second micro lens 1202B over a second sub-pixel 202B have a same shape and a same size (¶59-60, 22). It would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains to employ the teachings of Hsieh into Bonakdar to provide for an increase in uniformity of the radiation on the top surface of the sensor elements (¶66 of Hsieh). Claim(s) 8-9 is/are rejected under 35 U.S.C. 103 as being unpatentable over Bonakdar in view Kim, as applied to claim 6 and 19 above, respectively and further in view of Ichimura et al. (US 20120326011 A1; hereinafter “Ichimura”). In re claim 8, Bonakdar, as modified by Kim, discloses the image sensor of claim 4. Bonakdar, as modified by Kim, does not expressly disclose wherein a summit outer area between an outer boundary and the summit of the first micro lens and a summit inner area between the summit and the depression have different radii of curvature. In the same field of endeavor, Ichimura discloses an image sensor (Figs. 7), wherein a summit outer area between an outer boundary and the summit of the first micro lens 15-1 (a summit outer area is an outer area between outer boundary of a first portion of the first micro lens 15-1 from the summit to the leftmost point of the first micro lens 15-1) and a summit inner area between the summit and the depression 16-1 have different radii of curvature (¶41-44, 72-73). It would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains to employ the teachings of Ichimura into Bonakdar/Kim to provide for a higher condensing ratio (¶72-73 of Ichimura). In re claim 9, Bonakdar, as modified by Kim and Ichimura, discloses the image sensor of claim 8. Ichimura further discloses in fig. 7, wherein the summit outer area has a same radius of curvature as a radius of curvature of the second micro lens (e.g., a radius of curvature of an outer portion of a second micro lens 15-2). Claim(s) 11-12 is/are rejected under 35 U.S.C. 103 as being unpatentable over Bonakdar in view of Kim, as applied to claim 1 above and further in view of Jang et al. (US 20210197506 A1; hereinafter “Jang”). In re claim 11, Bonakdar, as modified by Kim, discloses the image sensor of claim 1. Bonakdar, as modified by Kim, does not expressly disclose wherein the depression includes a hole, and a planar shape of the hole has a closed curve. In the same field of endeavor, Jang discloses an image sensor (Fig. 1), wherein a depression between adjacent micro lenses 4, 6 includes a hole 21, and a planar shape of the hole 21 has a closed curve (¶39-41). It would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains to employ the teachings of Jang into Bonakdar to reduce reflection in the microarray lenses (¶42 of Jang). In re claim 12, Bonakdar (figs. 6-7), as modified by Kim and Jang (fig. 1), discloses the image sensor of claim 11, wherein the first micro lens (Bonakdar: 760(1)) includes a first portion (e.g. a left portion) at one side around the hole (Jang: 21), and a second portion (e.g. a right portion of 760(1) of Bonakdar) at the other side around the hole (Jang: 21). Furthermore, Jang discloses the dimensions of the air gaps can be modified and increase to further reduce reflection in the microarray lenses (¶46). Therefore, one would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains to employ the teachings of Jang and form the first portion and the second portion of micro lenses being spaced apart from each other by a diameter of the hole to further reduce reflection in the microarray lenses (¶46). Bonakdar, as modified by Kim and Jang, does not expressly disclose a cross section of the first portion, a cross section of the second portion, and a cross section of the second micro lens have a same shape and a same size. In the same field of endeavor, Hsieh discloses an image sensor (Figs. 12A-12B) wherein a cross section of a first portion 1202A and a second portion 1202A of a first micro lens over a first sub-pixel 202A, and a cross section of the second micro lens 1202B over a second sub-pixel 202B have a same shape and a same size (¶59-60, 22). It would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains to employ the teachings of Hsieh into Bonakdar/Kim/Jang to provide for an increase in uniformity of the radiation on the top surface of the sensor elements (¶66 of Hsieh). Allowable Subject Matter Claims 14-18 are allowed. Closest prior art of record, alone or in combination, does not expressly disclose an image sensor including a first width of a first cross section of the first micro lens cut along a diagonal direction toward the second sub-pixel being smaller than a second width of a second cross section of the first micro lens cut along an orthogonal direction toward another first micro lens adjacent thereto. Dependent claims 15-18 are indicated allowable based on their dependency on claim 14. Conclusion Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to NILUFA RAHIM whose telephone number is (571)272-8926. The examiner can normally be reached M-F 9am-5:30pm EST. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Yara J. Green can be reached at (571) 270-3035. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /NILUFA RAHIM/Primary Examiner, Art Unit 2893
Read full office action

Prosecution Timeline

Jun 09, 2023
Application Filed
Aug 23, 2025
Non-Final Rejection — §103
Sep 24, 2025
Interview Requested
Oct 01, 2025
Examiner Interview Summary
Oct 01, 2025
Applicant Interview (Telephonic)
Nov 24, 2025
Response Filed
Mar 26, 2026
Final Rejection — §103
Apr 15, 2026
Interview Requested

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

3-4
Expected OA Rounds
83%
Grant Probability
82%
With Interview (-1.2%)
2y 5m
Median Time to Grant
Moderate
PTA Risk
Based on 451 resolved cases by this examiner. Grant probability derived from career allow rate.

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