DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Continued Examination Under 37 CFR 1.114
A request for continued examination under 37 CFR 1.114, including the fee set forth in 37 CFR 1.17(e), was filed in this application after final rejection. Since this application is eligible for continued examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, the finality of the previous Office action has been withdrawn pursuant to 37 CFR 1.114. Applicant's submission filed on 18 May 2026 has been entered.
EXAMINER’S AMENDMENT
A telephone call was made on 12 June 2026 to request an authorization of the Examiner’s amendment, but did not result in an authorization.
Information Disclosure Statement
The information disclosure statement (IDS) submitted on 24 March 2026 was filed prior to the mailing date of the of this office correspondence. The submission is in compliance with the provisions of 37 CFR 1.97. Accordingly, the information disclosure statement is being considered by the examiner.
Claim Objections
Claims 1, 29 and 31 are objected to because of the following informalities: See the relative terms “some portions” in claims 1 and 29.
In claim 1, lines 1-13:
“performing a second light-exposure process on the photoresist using a second lithography mask, wherein in the second light-exposure process, the inner portion of the photoresist is exposed, and wherein the peripheral portion of the photoresist is blocked from being exposed, wherein the inner portion is spaced from the peripheral portion by a stitching portion, and some portions of the photoresist in the stitching portion are double exposed, and wherein the stitching portion forms a full ring encircling the inner portion; and
developing the photoresist.” should read:
-- performing a second light-exposure process on the photoresist using a second lithography mask, wherein in the second light-exposure process, the inner portion of the photoresist is exposed, and [[wherein]] the peripheral portion of the photoresist is blocked from being exposed, wherein the inner portion is spaced from the peripheral portion by a stitching portion, and [[some]] selected portions of the photoresist in the stitching portion are double exposed, and wherein the stitching portion forms a [[full ring]] ring-shaped portion fully encircling the inner portion; and
developing the photoresist. --
In claim 29, lines 8-16:
“performing a second light-exposure process on the photoresist using a second lithography mask, wherein in the second light-exposure process, the inner portion of the photoresist is exposed, and wherein the peripheral portion of the photoresist is blocked from being exposed, wherein the inner portion is spaced from the peripheral portion by a stitching portion, and some portions of the photoresist in the stitching portion are double exposed, and wherein the stitching portion forms a full ring encircling the inner portion, wherein the second light-exposure process forms second exposed patterns, and wherein the first exposed patterns and the second exposed patterns are joined in the stitching portion; and
developing the photoresist.” should read:
-- performing a second light-exposure process on the photoresist using a second lithography mask, wherein in the second light-exposure process, the inner portion of the photoresist is exposed, and [[wherein]] the peripheral portion of the photoresist is blocked from being exposed, wherein the inner portion is spaced from the peripheral portion by a stitching portion, and [[some]] selected portions of the photoresist in the stitching portion are double exposed, and wherein the stitching portion forms a [[full ring]] ring-shaped portion fully encircling the inner portion, wherein the second light-exposure process forms second exposed patterns, and wherein the first exposed patterns and the second exposed patterns are joined in the stitching portion; and
developing the photoresist. --
In claim 31, lines 2-3:
“a continuous and straight feature.” should read: -- a continuous and straight line feature. --
Appropriate correction is required.
Specification
The amendment filed on 18 May 2026 is objected to under 35 U.S.C. 132(a) because it introduces new matter into the disclosure. 35 U.S.C. 132(a) states that no amendment shall introduce new matter into the disclosure of the invention. The added material which is not supported by the original disclosure is as follows:
Claim 35 recites “forming features in the openings, wherein outer parts of the features formed in the peripheral portion of the photoresist are joined to inner parts of the features formed in the inner portion of the photoresist.” in lines 14-16, in which the specification fails to describe “forming features in the openings”. See disclosed specification, para. [0024, 0070-0076].
Applicant is required to cancel the new matter in the reply to this Office Action.
Claim Rejections - 35 USC § 112
The following is a quotation of the first paragraph of 35 U.S.C. 112(a):
(a) IN GENERAL.—The specification shall contain a written description of the invention, and of the manner and process of making and using it, in such full, clear, concise, and exact terms as to enable any person skilled in the art to which it pertains, or with which it is most nearly connected, to make and use the same, and shall set forth the best mode contemplated by the inventor or joint inventor of carrying out the invention.
The following is a quotation of the first paragraph of pre-AIA 35 U.S.C. 112:
The specification shall contain a written description of the invention, and of the manner and process of making and using it, in such full, clear, concise, and exact terms as to enable any person skilled in the art to which it pertains, or with which it is most nearly connected, to make and use the same, and shall set forth the best mode contemplated by the inventor of carrying out his invention.
Claims 35-38 are rejected under 35 U.S.C. 112(a) or 35 U.S.C. 112 (pre-AIA ), first paragraph, as failing to comply with the written description requirement. The claim(s) contains subject matter which was not described in the specification in such a way as to reasonably convey to one skilled in the relevant art that the inventor or a joint inventor, or for applications subject to pre-AIA 35 U.S.C. 112, the inventor(s), at the time the application was filed, had possession of the claimed invention.
Claim 35 recites “forming features in the openings, wherein outer parts of the features formed in the peripheral portion of the photoresist are joined to inner parts of the features formed in the inner portion of the photoresist.” in lines 14-16, in which the Specification or Drawings fails to describe “forming features in the openings”. See disclosed specification, para. [0024, 0070-0076]. Further, the disclosed via openings 26 in Fig. 2 and para. [0027-0029] shows metal seed layer 27 and photoresist 28. However, Fig. 3A shows, photoresist 28 includes unexposed portion 28A1 and unexposed portion 28A2 and exposed portions 28B′, in which it the specification fails to disclose what the recited “features in the openings” or “forming features in the openings” are. See, the features recited in claims 2-3 and 30-31 are formed in the peripheral portion and the inner portion, not in the openings.
Response to Arguments
Applicant’s arguments filed on 18 May2026 with respect to claim(s) 1-5, 7, 10-12 have been considered but are moot because the new ground of rejection does not rely on any reference applied in the prior rejection of record for any teaching or matter specifically challenged in the argument.
Allowable Subject Matter
Claims 1 and 29 would be allowable if rewritten or amended to overcome the claim objections and the rejection(s) under 35 U.S.C. 112(a) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action. Claims 2-4, 7-12 and 30-34 are allowable by virtue of its dependency.
The following is an examiner’s statement of reasons for indicating allowable subject matter:
Claim 1 would be allowable for disclosing a method comprising: the peripheral portion encircles the inner portion; wherein the inner portion is spaced from the peripheral portion by a stitching portion, and some portions of the photoresist in the stitching portion are double exposed, and wherein the stitching portion forms a full ring encircling the inner portion.
Claim 29 would be allowable for disclosing a method comprising: the inner portion is spaced from the peripheral portion by a stitching portion, and some portions of the photoresist in the stitching portion are double exposed, and wherein the stitching portion forms a full ring encircling the inner portion, wherein the second light-exposure process forms second exposed patterns, and wherein the first exposed patterns and the second exposed patterns are joined in the stitching portion.
Though, prior art of record Wei (US 20170213798) teaches, the method including a stitching zone 300 in which inner portion is spaced from the peripheral portion by a stitching portion, Wei fails to teach the stitching portion forms a full ring encircling the inner portion.
Prior art Yang (US 20090104564) does not teach, the inner portion is spaced from the peripheral portion by a stitching portion, and some portions of the photoresist in the stitching portion are double exposed, and wherein the stitching portion forms a full ring encircling the inner portion.
Therefore, claims 1 and 29 would be allowable. Claims 2-4, 7-12 and 30-34 would be allowable by virtue of its dependency.
Any comments considered necessary by applicant must be submitted no later than the payment of the issue fee and, to avoid processing delays, should preferably accompany the issue fee. Such submissions should be clearly labeled “Comments on Statement of Reasons for Allowance.”
Conclusion
Prior art Fabinski (US 20120082937) teaches method comprising: forming a photoresist on a base structure; performing a first light-exposure process on the photoresist using first lithography mask, wherein in the first light-exposure process, an inner portion of the photoresist is blocked from being exposed, and a peripheral portion of the photoresist is exposed, and wherein the peripheral portion encircles the inner portion; performing a second light-exposure process on the photoresist using a second lithography mask, wherein in the second light-exposure process, the inner portion of the photoresist is exposed, and wherein the peripheral portion of the photoresist is blocked from being exposed; and developing the photoresist.
Any inquiry concerning this communication or earlier communications from the examiner should be directed to JOSE K. ABRAHAM whose telephone number is (571)270-1087. The examiner can normally be reached Monday-Friday 8:30-4:30 EST.
Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice.
If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, THOMAS J. HONG can be reached at (571) 272-0993. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
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/JOSE K ABRAHAM/Examiner, Art Unit 3729
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