Prosecution Insights
Last updated: October 01, 2026
Application No. 18/338,404

MEMORY WITH ONE ACCESS TRANSISTOR COUPLED TO MULTIPLE CAPACITORS

Non-Final OA §102§103
Filed
Jun 21, 2023
Examiner
WALL, VINCENT
Art Unit
Tech Center
Assignee
Intel Corporation
OA Round
1 (Non-Final)
62%
Grant Probability
Moderate
1-2
OA Rounds
0m
Est. Remaining
87%
With Interview

Examiner Intelligence

Grants 62% of resolved cases
62%
Career Allowance Rate
517 granted / 827 resolved
+2.5% vs TC avg
Strong +24% interview lift
Without
With
+24.4%
Interview Lift
resolved cases with interview
Typical timeline
2y 9m
Avg Prosecution
48 currently pending
Career history
874
Total Applications
across all art units

Statute-Specific Performance

§101
2.5%
-37.5% vs TC avg
§103
52.8%
+12.8% vs TC avg
§102
16.3%
-23.7% vs TC avg
§112
24.7%
-15.3% vs TC avg
Black line = Tech Center average estimate • Based on career data from 827 resolved cases

Office Action

§102 §103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Information Disclosure Statement The information disclosure statement (IDS) submitted on June 21, 2023; May 9, 2024; April 7, 2025; and November 21, 2025 were considered by the examiner. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claim(s) 1-6, and 17-20 is/are rejected under 35 U.S.C. 102(a)(2) as being anticipated by or, in the alternative, under 35 U.S.C. 103 as obvious over Dokania et al. (US 11,696,451 B1) (“Dokania”). Regarding claim 1, Dokania teaches at least in figure 5A, 7A, and 9B: a transistor (MN) over a support structure (301), the transistor (MN) having a region (detailed below), wherein the region (detailed as follows) is either a source region or a drain region (342); a first plateline (PL0_1) and a second plateline (PLO_2_; a first capacitor (Cfe1), wherein a first capacitor electrode (sn1) of the first capacitor (Cfe1) is coupled to the region (342), and a second capacitor electrode (PL0_1 connected to Cfe1) of the first capacitor (Cfe1) is coupled to the first plateline (PL0_1); and a second capacitor (Cfe2), wherein a first capacitor electrode of the second capacitor is coupled to the region (both capacitors first capacitor electrodes are coupled to sn1 which is coupled to 342), and a second capacitor electrode of the second capacitor is coupled to the second plateline (Cfe2’s second capacitor electrode is coupled to PL0_2), wherein the first plateline (PL_01) is between the support structure (301) and the second plateline (PL0_2) (based upon the embodiment shown in figure 7A; If an argument is presented that this is not inherent in Dokania then it would have been obvious based upon the cited figures and the disclsoure), and the first capacitor electrode of the first capacitor is materially continuous with the first capacitor electrode of the second capacitor (figure 5A shows that all the first capacitor electrodes are connected together). Regarding claim 2, Dokania teaches at least in figure 5A, 7A, and 9B: wherein the second plateline (PL0_2) is stacked above the first plateline (PL0_1) above the support structure (see figure 7A). Regarding claim 3, Dokania teaches at least in figure 5A, 7A, and 9B: wherein a projection of the second plateline onto a plane parallel to the support structure at least partially overlaps with a projection of the first plateline onto the plane (this is shown in figure 7A). Regarding claim 4, Dokania teaches at least in figure 5A, 7A, and 9B: wherein a projection of the first capacitor electrode of the second capacitor onto a plane parallel to the support structure at least partially overlaps with a projection of the first capacitor electrode of the first capacitor onto the plane Regarding claim 5, Dokania teaches at least in figure 5A, 7A, and 9B: further comprising (detailed below) a conductive via (Via0) having a first end and a second end (detailed below), wherein the first end of the conductive via is coupled to the region (Via0 is coupled to source contact), and the second end of the conductive via (Via0) is coupled to an electrically conductive material (detailed below) extending away from the support structure (342), wherein a first portion of the electrically conductive material is the first capacitor electrode (sn1) of the first capacitor (PL0_1) and a second portion of the electrically conductive material (sn1)is the first capacitor electrode of the second capacitor (PL0_2). Regarding claim 6, Dokania teaches at least in figure 5A, 7A, and 9B: wherein the first portion and the second portion are materially continuous portions of the electrically conductive material (sn1 is a materially continuous portion of the electrically conductive material as shown in figure 5A and 7A. This is because in the end device they are a monolithic structure.). Regarding claim 17, Dokania teaches at least in figure 5A, 7A, 9B, and 13B: Claim 17 is different than claim 1 in that claim 17 is claiming a second set of capacitors with the same structure as the first set of capacitors in claim 1. Dokania teaches this in figure 5A. Where the circuit diagram of figure 5A teaches claim 1. The second set of capacitors in figure 5A come from a second memory bit-cells 5010,0 in the array 501. Therefore, while only one set of capacitors is shown in figure 5A in the circuit diagram it would be inherent, or obvious, that the entire figure 5A shows a second set of capacitors in the manner claimed. Therefore, claim 17 is rejected for the reasons stated in at least one of claims 1-6, and the rational above. Regarding claim 18, Claim 18 is rejected for the same reasons as claim 17 above. Claim Rejections - 35 USC § 103 Claim(s) 7-16, and 19-20 is/are rejected under 35 U.S.C. 103 as being unpatentable over Dokania. Regarding claims 7-16, Dokania teaches at least in figure 5A, 7A, 9B, and 13B: Claims 7-16 are a duplication of the structure described in claims 1-6 above. Under MPEP 2144.04(VI)(B) the mere duplication of parts has no patentable significance unless a new and unexpected result is produced. Here Applicant is merely duplicating the capacitors of claims 1-6 above. There are no unexpected results arising from this mere duplication. Regarding claim 19, Claim 19 is rejected for at least the same reasons as at least one of claims 1-18 above. In addition, Dokania teaches in figures 15-16 that the memory array is formed on a die. Further, forming a memory array on a die is extremely obvious in the art. Regarding claim 20, Claim 20 is rejected for at least the same reasons as at least one of claims 1-19 above. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to VINCENT WALL whose telephone number is (571)272-9567. The examiner can normally be reached Monday to Thursday at 7:30am to 2:30pm PST. Interviews can be scheduled on Tuesday thru Thursday at 10am PST or 2pm PST. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Jessica Manno can be reached at 571-272-2339. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /VINCENT WALL/ Primary Examiner, Art Unit 2898
Read full office action

Prosecution Timeline

Jun 21, 2023
Application Filed
Oct 18, 2023
Response after Non-Final Action
Aug 13, 2026
Non-Final Rejection mailed — §102, §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12751049
SEMICONDUCTOR FILM
4y 11m to grant Granted Sep 29, 2026
Patent 12751071
SPLIT GATE TRENCH DEVICE
3y 8m to grant Granted Sep 29, 2026
Patent 12751046
SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF MANUFACTURING THE SAME
3y 8m to grant Granted Sep 29, 2026
Patent 12745427
TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE
2y 6m to grant Granted Sep 22, 2026
Patent 12740102
Post CMOS Compatible Ferroelectric Field Effect Transistor With AIScN Dielectric And 2D Material Channel
5y 2m to grant Granted Sep 15, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

Strategy Recommendation AI-generated — please review before filing

Get a prosecution strategy drawn from examiner precedents, rejection analysis, and claim mapping.
Typically takes 5-10 seconds — AI-generated, attorney review required before filing

Prosecution Projections

1-2
Expected OA Rounds
62%
Grant Probability
87%
With Interview (+24.4%)
2y 9m (~0m remaining)
Median Time to Grant
Low
PTA Risk
Based on 827 resolved cases by this examiner. Grant probability derived from career allowance rate.

Sign in with your work email

Enter your email to receive a magic link. No password needed.

Personal email addresses (Gmail, Yahoo, etc.) are not accepted.

Free tier: 3 strategy analyses per month