DETAILED ACTION
General Remarks
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Continued Examination Under 37 CFR 1.114
A request for continued examination under 37 CFR 1.114, including the fee set forth in 37 CFR
1.17(e), was filed in this application after final rejection. Since this application is eligible for continued examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, the finality of the previous Office action has been withdrawn pursuant to 37 CFR 1.114. Applicant's submission filed on 07/23/2026 has been entered.
Response to Amendment
The Amendment filed on 07/23/2026 has been entered. Claims 12-20 are withdrawn. Claims 1,
5-22 are pending. Claims 2-4 are canceled. Claims 21-22 are new.
Response to Arguments
Applicant's arguments "Applicant Arguments/Remarks Made in an Amendment" with the
"Amendment/Req. Reconsideration-After Non-Final Reject" filed on 07/23/2026, related to: “…the claimed p-type ion activation region presupposes a p-type ion- doped layer that already contains both p-type dopants, such as magnesium, and hydrogen- passivated magnesium-hydrogen bonds capable of being broken by oxygen replacement… …Ozaki does not disclose magnesium doped in the capping layer 4, nor magnesium-hydrogen bonds in the capping layer 4… … Ozaki does not disclose that the capping layer 4 around 4X as an unactivated p-type ion-doped region containing magnesium-hydrogen bonds… …the Office Action lacks a reasoned motivation to combine Lu and Ozaki in the claimed manner and instead relies on hindsight… …Neither reference teaches or suggests using oxygen to replace hydrogen in a p- type ion doping layer so as to activate p-type ions. Neither reference teaches or suggests deliberately creating an activation region and a passivation region within the same p-type ion doping layer based on differences in magnesium-hydrogen bond density… …Those high-resistivity regions are not disclosed as p-type ion-doped regions and are not disclosed as passivation regions that are part of the same p-type ion doping layer. In contrast, claim 11 requires multiple p-type ion activation regions spaced apart within a p-type ion doping layer…”.
The Applicant’s arguments have been fully considered; however, the arguments are not persuasives and some of them are moot because do not apply to some reference of the record, US 20210167202 A1 to Lu and US 20140264451 A1 to Osaki.
Lu discloses a p-type ion region 50b doped with Mg in [0040] and comprising hydrogen in [0007] but it does not disclose “p-type ion activation region is an oxygen-doped region”, however, Osaki discloses an oxygen-doped region formed in a GaN layer by oxygen ion implantation in [0121]. Osaki device does not need to include the feature of a “p-type ion doping layer” having magnesium and hydrogen, because this feature is included in Lu’s reference. Osaki is only cited to include the formation of a region with oxygen implantation [0121]. The combination of Lu and Osaki results in the interaction of the oxygen (from Osaki) with magnesium and hydrogen from Lu, as expected in this type of reactions. The motivation of combining Lu with Osaki is related to find a high threshold while a decrease in drain current is suppressed ([0128], Osaki). In relation with claim 11, Hsiung (US 20140203288 A1) discloses the possibility to add oxygen-ion doped regions ([0021], Hsiung) to be included in the Lu’s 50 layer, see detail below.
Claim Rejections - 35 USC § 103
The following is a quotation of AIA 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action:
A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102 of this title, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made.
Claim(s) 1, 8 and 9 is/are rejected under AIA 35 U.S.C. 103 as being unpatentable over Lu (US 20210167202 A1, of the record) in view of Ozaki (US 20140264451 A1, hereinafter Ozaki, of the record).
Re: Independent Claim 1, Lu discloses a semiconductor structure (transistor structure 1 in [0033], Fig 1A-C), comprising:
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Lu’s Figure 1C-Annotated.
a substrate (10 substrate in [0037], Fig. 1C);
a first semiconductor layer (40-B channel formed by AlGaN, wherein channel 40 is formed by GaN/AlGaN in [0039], Fig. 1C-Annotated) and a second semiconductor layer (40-A channel formed by GaN in [0039], Fig. 1C-Annotated) sequentially disposed on the substrate (10); and
a p-type ion doping layer (50b top layer doped with Mg, as p-type doping in [0040], Fig. 1C-Annotated) disposed on the second semiconductor layer (40-A),
Lu does not expressly disclose wherein the p-type ion doping layer comprises a p-type ion activation region and a p-type ion passivation region enclosing the p-type ion activation region, and the p-type ion activation region is an oxygen-doped region with hydrogen doped in the p-type ion doping layer replaced by oxygen through oxygen ion-implantation to release and activate p-type ions doped in the p-type ion activation region; wherein the p-type ion doped in the p-type ion doping layer comprises a magnesium ion, the number of magnesium hydrogen bonds in the p-type ion activation region is less than that in the p-type ion passivation region; and an upper surface, a lower surface and sidewalls of the p-type ion activation region of the p-type ion doping layer are enclosed by the passivation region of the p-type ion doping layer; or an upper surface and sidewalls of the p-type ion activation region of the p-type ion doping layer are enclosed by the passivation region of the p-type ion doping layer.
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Osaki’s Figure 7-Annotated.
However, in the same semiconductor device field of endeavor, Osaki discloses a GaN capping layer (4 [0030], Fig.7) comprises a p-type ion activation region (4X oxidized region activated by oxygen ion implantation in [0121], Fig.7-Annotated) and a passivation region (areas of capping layer 4 around sidewalls and upper surface of 4X, wherein the upper surface of 4X is facing the surface of layer 3, Fig. 7) enclosing the p-type ion activation region (4X), and the p-type ion activation region (4X) is an oxygen-doped region ([0121]).
Therefore, Lu in view of Osaki teaches wherein the p-type ion doping layer (50b top layer, Lu) comprises a p-type ion activation region (4X, Osaki) and a p-type ion passivation region (after applied Osaki’s 4X, a passivation region from Lu correspond to areas of 50b around sidewalls and upper surface of Osaki’s 4X) enclosing the p-type ion activation region (4X, Osaki), and the p-type ion activation region (4X, Osaki) is an oxygen-doped region ([0121], Osaki) with hydrogen doped ([0007], Lu) in the p-type ion doping layer (50b top layer, Lu) replaced by oxygen through oxygen ion-implantation to release and activate p-type ions doped in the p-type ion activation region (oxygen ion-implantation from Osaki included in Lu, reacts with p-type ions doped from Lu); wherein the p-type ion doped in the p-type ion doping layer (50b top layer, Lu) comprises a magnesium ion ([0040], Lu), the number of magnesium hydrogen bonds (magnesium hydrogen bonds included in Lu in [0007, 0040]) in the p-type ion activation region (4X, Osaki) is less (the oxygen impurity 4X from Osaki applied to Lu reduces the magnesium hydrogen bonds) than that in the p-type ion passivation region (a region of 50b around Osaki’s 4X, after applied Osaki’s 4X); and an upper surface, a lower surface and sidewalls of the p-type ion activation region of the p-type ion doping layer are enclosed by the passivation region of the p-type ion doping layer; or an upper surface and sidewalls of the p-type ion activation region (4X, Osaki) of the p-type ion doping layer (50b top layer, Lu) are enclosed by the passivation region of the p-type ion doping layer (regions of Osaki’s 4 around Osaki’s 4X, wherein upper surface and sidewalls of Osaki’s 4X are enclosed by Osaki’s 4, applied to Lu)
It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to include the Osaki’s p-type ion activation region (4x) to Lu’s device to obtain a high threshold/normally-off device while suppressing decrease in drain current ([0128], Osaki).
Re: Claim 8, Lu modified by Osaki discloses the semiconductor structure according to claim 1, wherein a material of the p- type ion doping layer is one of or a combination of GaN, InGaN, AlGaN, or InAlGaN (50b made of III-nitride semiconductors selected from AlGaN, InAlN, AlN or InAlGaN in [0040], Lu).
Re: Claim 9, Lu modified by Osaki discloses the semiconductor structure according to claim 1, further comprising: a protective layer (50a a top layer as a protection layer in [0040], Lu) disposed on the p-type ion doping layer (50b), wherein a material of the protective layer is AlN or AlGaN (50a made of III-nitride semiconductors selected from AlGaN, InAlN, AlN or InAlGaN in [0040], Lu).
Claim(s) 5-6 is/are rejected under AIA 35 U.S.C. 103 as being unpatentable over Lu in view of Osaki and further in view of Yonkee et al. (US 20180374699 A1, hereinafter Yonkee, of the record).
Re: Claim 5, Lu modified by Osaki discloses the semiconductor structure according to claim 1,
Lu modified by Osaki does not expressly disclose wherein along a direction away from the substrate, a variation trend of a content of an oxygen element doped in a material of the p-type ion activation region comprises one of the following: uniformly decreasing, decreasing in a hopping manner, decreasing in a step-like manner, or first increasing and then decreasing.
However, in the same semiconductor device field of endeavor, Yonkee discloses wherein along a direction away from the substrate (206 substrate in [0050], Fig.2), a variation trend of a content of an oxygen element doped in a material of the p-type ion activation region (220 delta-doped layer using at least one donor atom selected from oxygen in [0052], Fig.2) comprises one of the following: uniformly decreasing, decreasing in a hopping manner, decreasing in a step-like manner, or first increasing and then decreasing (oxygen doping having a profile of increasing and then decreasing, having a density from about 2×10.sup.20 cm.sup.−3 to about 4×10.sup.21 cm.sup.−3 in [0054], Fig.3).
It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to include the Yonkee’s feature of a variation trend of a content of oxygen element to the combination of Lu and Osaki device for improving the performance of III-nitride devices ([0012], Yonkee).
Re: Claim 6, Lu modified by Osaki discloses the semiconductor structure according to claim 1,
Lu modified by Osaki does not expressly disclose wherein a content of an oxygen element doped in a material of the p-type ion activation region is less than 1E21 atoms/cm3.
However, in the same semiconductor device field of endeavor, Yonkee discloses wherein a content of an oxygen element doped in a material of the p-type ion activation region is less than 1E21 atoms/cm3 (oxygen doping having a density of about 2×10.sup.20 cm.sup. −3).
It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to include the Yonkee’s feature of a content of an oxygen element to the combination of Lu and Osaki device for improving the performance of III-nitride devices ([0012], Yonkee).
Claim(s) 7 is/are rejected under AIA 35 U.S.C. 103 as being unpatentable over Lu in view of Ozaki and further in view of Su et al. (US 20230326996 A1, hereinafter Su, of the record).
Re: Claim 7, Lu modified by Osaki discloses the semiconductor structure according to claim 1,
Lu modified by Osaki does not expressly disclose wherein a ratio of a content of an oxygen element doped in a material of the p-type ion activation region to a content of a p-type ion doped in the material of the p-type ion activation region is greater than 0.1 and less than 10.
However, in the same semiconductor device field of endeavor, Su discloses a wherein a ratio of a content of an oxygen element doped (auxiliary doping element is oxygen in [0034]) in a material of the p-type ion activation region (62 second sublayer in [0045]) to a content of a p-type ion doped (main doping element is Mg in [0034]) in the material of the p-type ion activation region (62) is greater than 0.1 and less than 10 (ratio of the dopant concentration of the main doping element to the dopant concentration of the auxiliary doping element in the second sublayer 62 is 2:1 in [0045]).
It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to include the Su’s feature of a ratio of a content of an oxygen element to the combination of Lu and Osaki device to obtain a gallium nitride-based high electron mobility transistor epitaxial wafer ([0002], Su).
Claim(s) 11 is/are rejected under AIA 35 U.S.C. 103 as being unpatentable over Lu in view of Ozaki and further in view of Hsiung (US 20140203288 A1, hereinafter Hsiung, of the record).
Re: Claim 11, Lu modified by Osaki discloses the semiconductor structure according to claim 1,
Lu modified by Osaki does not expressly disclose wherein the p-type ion doping layer comprises a plurality of p-type ion activation regions, and the plurality of p-type ion activation regions are arranged at intervals in a plane parallel to the substrate with the plurality of p-type ion activation regions enclosed by the p-type ion passivation region respectively.
However, in the same semiconductor device field of endeavor, Hsiung discloses a plurality of p-type ion activation regions (146 regions formed by ion bombardment using oxygen with active deep level state in [0021], Fig.7), and the plurality of p-type ion activation regions (146) are arranged at intervals in a plane parallel (Fig.7) to the substrate (110 substrate in [0016], Fig.7).
Therefore, Lu in view of Osaki and Hsiung teaches wherein the p-type ion doping layer (50b top layer, Lu) comprises a plurality of p-type ion activation regions (146, Hsiung), and the plurality of p-type ion activation regions are arranged at intervals in a plane parallel (Fig.7, Hsiung) to the substrate (10, Lu) with the plurality of p-type ion activation regions (146, Hsiung) enclosed by the p-type ion passivation region (areas of Lu’s 50b around Hsiung’s 146 after applied Hsiung’s 146) respectively.
It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to include the Hsiung’s feature of a plurality of p-type ion activation regions to the combination of Lu and Osaki device to create regions with active deep level state ([0021], Hsiung).
Second ground of rejections
Claim(s) 1,10 and 22 is/are rejected under AIA 35 U.S.C. 103 as being unpatentable over Lu in view of Ozaki.
Re: Independent Claim 1, Lu discloses a semiconductor structure (transistor structure 1 in [0033], Fig 1A-C), comprising:
a substrate (10 substrate in [0037], Fig. 1C);
a first semiconductor layer (40 channel formed by AlGaN, wherein channel 40 is formed by GaN/AlGaN in [0039], Fig. 1C) and a second semiconductor layer (50b made of III-nitride semiconductors selected from AlGaN, InAlN, AlN or InAlGaN in [0040], Lu) sequentially disposed on the substrate (10); and
a p-type ion doping layer (50a doped with Mg, as p-type doping in [0040], Fig. 1C) disposed on the second semiconductor layer (50b),
Lu does not expressly disclose wherein the p-type ion doping layer comprises a p-type ion activation region and a p-type ion passivation region enclosing the p-type ion activation region, and the p-type ion activation region is an oxygen-doped region with hydrogen doped in the p-type ion doping layer replaced by oxygen through oxygen ion-implantation to release and activate p-type ions doped in the p-type ion activation region; wherein the p-type ion doped in the p-type ion doping layer comprises a magnesium ion, the number of magnesium hydrogen bonds in the p-type ion activation region is less than that in the p-type ion passivation region; and an upper surface, a lower surface and sidewalls of the p-type ion activation region of the p-type ion doping layer are enclosed by the passivation region of the p-type ion doping layer; or an upper surface and sidewalls of the p-type ion activation region of the p-type ion doping layer are enclosed by the passivation region of the p-type ion doping layer.
However, in the same semiconductor device field of endeavor, Osaki discloses a GaN capping layer (4 [0030], Fig.7) comprises a p-type ion activation region (4X oxidized region activated by oxygen ion implantation in [0121], Fig.7-Annotated) and a passivation region (areas of capping layer 4 around sidewalls and upper surface of 4X, wherein the upper surface of 4X is facing the surface of layer 3, Fig. 7) enclosing the p-type ion activation region (4X), and the p-type ion activation region (4X) is an oxygen-doped region ([0121]).
Therefore, Lu in view of Osaki teaches wherein the p-type ion doping layer (50a layer, Lu) comprises a p-type ion activation region (4X, Osaki) and a p-type ion passivation region (after applied Osaki’s 4X, a passivation region from Lu correspond to areas of 50a around sidewalls and upper surface of Osaki’s 4X) enclosing the p-type ion activation region (4X, Osaki), and the p-type ion activation region (4X, Osaki) is an oxygen-doped region ([0121], Osaki) with hydrogen doped ([0007], Lu) in the p-type ion doping layer (50a layer, Lu) replaced by oxygen through oxygen ion-implantation to release and activate p-type ions doped in the p-type ion activation region (oxygen ion-implantation from Osaki included in Lu, reacts with p-type ions doped from Lu); wherein the p-type ion doped in the p-type ion doping layer (50a layer, Lu) comprises a magnesium ion ([0040], Lu), the number of magnesium hydrogen bonds (magnesium hydrogen bonds included in Lu in [0007, 0040]) in the p-type ion activation region (4X, Osaki) is less (the oxygen impurity 4X from Osaki applied to Lu reduces the magnesium hydrogen bonds) than that in the p-type ion passivation region (a region of 50b around Osaki’s 4X, after applied Osaki’s 4X); and an upper surface, a lower surface and sidewalls of the p-type ion activation region of the p-type ion doping layer are enclosed by the passivation region of the p-type ion doping layer; or an upper surface and sidewalls of the p-type ion activation region (4X, Osaki) of the p-type ion doping layer (50a layer, Lu) are enclosed by the passivation region of the p-type ion doping layer (regions of Osaki’s 4 around Osaki’s 4X, wherein upper surface and sidewalls of Osaki’s 4X are enclosed by Osaki’s 4, applied to Lu)
It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to include the Osaki’s p-type ion activation region (4x) to Lu’s device to obtain a high threshold/normally-off device while suppressing decrease in drain current ([0128], Osaki).
Re: Claim 10, Lu modified by Osaki discloses the semiconductor structure according to claim 1, further comprising: a source electrode (100 source in [0039], Lu) disposed on the second semiconductor layer (50b, Lu) and in ohmic contact (the source contact 100 and the drain contact 120 form ohmic contacts to layer 50b in [0033], Lu) with the second semiconductor layer (50b, Lu); a drain electrode (120 drain in [0039], Lu) disposed on the second semiconductor layer (50b, Lu) and in ohmic contact (in [0033], Lu) with the second semiconductor layer (50b, Lu); and a gate electrode (100 source in [0039], Lu) disposed on the p-type ion doping layer (50a, Lu) and in Schottky contact (Schottky contact in [0043], Lu) with the p- type ion doping layer (50a, Lu).
Re: Claim 22, Lu modified by Osaki discloses the semiconductor structure according to claim 1, further comprising: a gate electrode (100 source in [0039], Lu) disposed on the p-type ion doping layer (50a, Lu) and in Schottky contact (Schottky contact in [0043], Lu) with the p- type ion doping layer (50a, Lu),
Lu modified by Osaki does not expressly disclose wherein the passivation region is located between the p-type ion activation region and the gate electrode to prevent direct contact between the gate electrode and the p-type ion activation region.
However, one of ordinary skill in the art looking to improve the electrical features of the device such as a high threshold voltage (Osaki), would have been able to obvious to try to choose one of two possible options, the first one is forming one activation region in contact with the gate electrode, or the second one is forming one activation region contactless with the gate electrode, this last option allows to tune the electrical properties of the device (see MPEP 2143.1 (e)).
The combination of Lu and Osaki results in wherein the passivation region (after applied Osaki’s 4X, a passivation region from Lu correspond to areas of 50a around sidewalls and upper surface of Osaki’s 4X) is located between the p-type ion activation region (4X, Osaki) and the gate electrode (100 source in [0039], Lu) to prevent direct contact between the gate electrode and the p-type ion activation region.
Claim(s) 21 is/are rejected under AIA 35 U.S.C. 103 as being unpatentable over Lu in view of Ozaki.
Re: Independent Claim 21, Lu discloses a semiconductor structure (transistor structure 1 in [0033], Fig 1A-C), comprising:
a substrate (10 substrate in [0037], Fig. 1C);
a first semiconductor layer (40 channel formed by AlGaN, wherein channel 40 is formed by GaN/AlGaN in [0039], Fig. 1C) and a second semiconductor layer (50b made of III-nitride semiconductors selected from AlGaN, InAlN, AlN or InAlGaN in [0040], Lu) sequentially disposed on the substrate (10);
a p-type ion doping layer (50a doped with Mg, as p-type doping in [0040], Fig. 1C) disposed on the second semiconductor layer (50b),
a source electrode (100 source in [0039]) disposed on the second semiconductor layer (50b) and in ohmic contact (the source contact 100 and the drain contact 120 form ohmic contacts to layer 50b in [0033]) with the second semiconductor layer (50b);
a drain electrode (120 drain in [0039]) disposed on the second semiconductor layer (50b) and in ohmic contact (in [0033]) with the second semiconductor layer (50b); and
a gate electrode (100 source in [0039]) disposed on the p-type ion doping layer (50a) and in Schottky contact (Schottky contact in [0043]) with the p- type ion doping layer (50a).
Lu does not expressly disclose wherein the p-type ion doping layer comprises a p-type ion activation region and a passivation region enclosing the p-type ion activation region, and the p-type ion activation region is an oxygen- doped region with hydrogen doped in the p-type ion doping layer replaced by oxygen through oxygen ion-implantation to release and activate p-type ion doped in the p-type ion activation region; the passivation region is located between the p-type ion activation region and the gate electrode to prevent direct contact between the gate electrode and the p-type ion activation region, and a depth of the p-type ion activation region located in the p-type ion doping layer is determined by energy of the oxygen ion-implantation.
However, in the same semiconductor device field of endeavor, Osaki discloses a GaN capping layer (4 [0030], Fig.7) comprises a p-type ion activation region (4X oxidized region activated by oxygen ion implantation in [0121], Fig.7-Annotated) and a passivation region (areas of capping layer 4 around sidewalls and upper surface of 4X, wherein the upper surface of 4X is facing the surface of layer 3, Fig. 7) enclosing the p-type ion activation region (4X), and the p-type ion activation region (4X) is an oxygen-doped region ([0121]).
Therefore, Lu in view of Osaki teaches wherein the p-type ion doping layer (50a layer, Lu) comprises a p-type ion activation region (4X, Osaki) and a passivation region (after applied Osaki’s 4X, a passivation region from Lu correspond to areas of 50a around sidewalls and upper surface of Osaki’s 4X) enclosing the p-type ion activation region (4X, Osaki), and the p-type ion activation region (4X, Osaki) is an oxygen- doped region ([0121], Osaki) with hydrogen doped ([0007], Lu) in the p-type ion doping layer (50a layer, Lu) replaced by oxygen through oxygen ion-implantation to release and activate p-type ion doped in the p-type ion activation region (oxygen ion-implantation from Osaki included in Lu, reacts with p-type ions doped from Lu); and a depth of the p-type ion activation region (4X, Osaki) located in the p-type ion doping layer (50a layer, Lu) is determined by energy of the oxygen ion-implantation (wherein it is common in the art, the adjustment of the energy of the oxygen ion-implantation to determine the depth of the p-type ion activation region [0114], Osaki).
It would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to include the Osaki’s p-type ion activation region (4x) to Lu’s device to obtain a high threshold/normally-off device while suppressing decrease in drain current ([0128], Osaki).
Lu modified by Osaki does not expressly disclose the passivation region is located between the p-type ion activation region and the gate electrode to prevent direct contact between the gate electrode and the p-type ion activation region.
However, one of ordinary skill in the art looking to improve the electrical features of the device such as a high threshold voltage (Osaki), would have been able to obvious to try to choose one of two possible options, the first one is forming one activation region in contact with the gate electrode, or the second one is forming one activation region contactless with the gate electrode, this last option allows to tune the electrical properties of the device (see MPEP 2143.1 (e)).
Therefore, the combination of Lu and Osaki teaches wherein the passivation region (after applied Osaki’s 4X, a passivation region from Lu correspond to areas of 50a around sidewalls and upper surface of Osaki’s 4X) is located between the p-type ion activation region (4X, Osaki) and the gate electrode (100 source in [0039], Lu) to prevent direct contact between the gate electrode (100 source in [0039], Lu) and the p-type ion activation region (4X, Osaki).
Conclusion
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/SANDRA MILENA RODRIGUEZ VILLANUEVA/Examiner, Art Unit 2898
/JESSE Y MIYOSHI/
Primary Examiner, Art Unit 2898
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