Prosecution Insights
Last updated: April 19, 2026
Application No. 18/352,923

SEMICONDUCTOR DEVICES INCORPORATING QUANTUM DOTS

Non-Final OA §103
Filed
Jul 14, 2023
Examiner
WRIGHT, TUCKER J
Art Unit
2891
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Saphlux Inc.
OA Round
1 (Non-Final)
79%
Grant Probability
Favorable
1-2
OA Rounds
2y 7m
To Grant
90%
With Interview

Examiner Intelligence

Grants 79% — above average
79%
Career Allow Rate
718 granted / 908 resolved
+11.1% vs TC avg
Moderate +11% lift
Without
With
+10.8%
Interview Lift
resolved cases with interview
Typical timeline
2y 7m
Avg Prosecution
35 currently pending
Career history
943
Total Applications
across all art units

Statute-Specific Performance

§101
0.3%
-39.7% vs TC avg
§103
44.7%
+4.7% vs TC avg
§102
35.2%
-4.8% vs TC avg
§112
16.7%
-23.3% vs TC avg
Black line = Tech Center average estimate • Based on career data from 908 resolved cases

Office Action

§103
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Election/Restrictions The 11/10/2025 "Reply" elects without traverse and identifies claims 1-11 as being drawn to invention I. The Reply cancels claims 12-20. The 9/8/2025 restriction requirement is proper, is maintained, and is hereby made final. Claim Rejections - 35 USC § 103 In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis (i.e., changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 1-4, 6-8, and 10-11 are rejected under 35 U.S.C. 103 as being unpatentable over Han (US Pub. No. 2020/0152841) in view of Lowes (US Pub. No. 2012/0049214). Regarding claim 1, in FIG. 1A, Han discloses an apparatus, comprising: a first nanoporous structure (114, paragraph [0055]) fabricated on a first surface of a first light-emitting device (rightmost 102), wherein a first plurality quantum dots (116, paragraph [0055]) are placed in the first nanoporous structure for converting light emitted by the first light-emitting device into light of a first color (e.g. red; paragraph [0057]); a second nanoporous structure fabricated (114) on a second surface of a second light-emitting device (middle 102), wherein a second plurality quantum dots (116) are placed in the second nanoporous structure for converting light emitted by the second light-emitting device into light a second color (e.g. green; paragraph [0057]); a third light-emitting device that emits light of a third color (e.g. blue, leftmost 102; paragraphs [0056] and [0057]). Han appears not to explicitly disclose a conductive layer comprising a conductive material, wherein at least a portion of the conductive layer is fabricated in a first trench between the first light-emitting device and the second light-emitting device, and wherein the conductive layer contacts the first surface of the first light-emitting device, the second surface of the second light-emitting device, and a third surface of the third light-emitting device. In FIGs. 21A-21B, Lowes discloses a similar light-emitting apparatus wherein to interconnect the light-emitting devices a conductive material (e.g. 80a, 82a, etc.) is formed in a trench between light-emitting devices wherein the conductive material contacts the emissive side (top) of the light-emitting devices. To interconnect the first, second, and third light-emitting devices it would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains to form a conductive layer comprising a conductive material, wherein at least a portion of the conductive layer is fabricated in a first trench between the first light-emitting device and the second light-emitting device, and wherein the conductive layer contacts the first surface of the first light-emitting device, the second surface of the second light-emitting device, and a third surface of the third light-emitting device. Regarding claim 2, in FIG. 1A, Han discloses that a first lateral dimension of the first light-emitting device is greater than a second lateral dimension of the first nanoporous structure (104/106/108 is wider than 114). Regarding claim 3, the combination of Han and Lowes discloses (see FIG. 1A of Han), a substrate (Han, 110) comprising a CMOS circuit (Han, paragraph [0061]); and a dielectric layer (Han 120, paragraph [0062]; Lowes FIG. 21B, element 74, paragraph [0088]), wherein at least a first portion of the dielectric layer is positioned between the substrate and the conductive layer (see Lowes FIG. 21B). Regarding claim 4, in FIG. 1A, Han discloses a color filter on the first nanoporous structure and the second nanoporous structure (color tinting, paragraph [0064]). Regarding claim 6, the combination of Han and Lowes discloses that the conductive material comprises a metallic material (conductive metal interconnects, Lowes paragraph [0118]). Regarding claim 7, in FIG. 1B, Han discloses a third nanoporous structure on the third light-emitting device, wherein no quantum dots are placed in the third nanoporous structure (“electrochemically etched n-GaN layer 114 nanoporous surfaces that does not include any embedded quantum dots,” paragraph [0057]). Regarding claim 8, the combination of Han and Lowes discloses that at least a portion of the conductive layer is fabricated in a second trench between the second light-emitting device and the third light-emitting device. Regarding claim 10, in FIG. 1B, Han discloses that the first surface of the first light-emitting device is a top surface of an n-GaN layer (108) of the first light-emitting device (paragraph [0054]). Regarding claim 11 in FIG. 1B, Han discloses insulating materials (120/122, paragraph [0062]) disposed on the conductive layer and in a plurality of trenches between the first nanoporous structure, the second nanoporous structure. Claims 4-5 is rejected under 35 U.S.C. 103 as being unpatentable over Han (US Pub. No. 2020/0152841) in view of Lowes (US Pub. No. 2012/0049214) as applied to claim 1, and further in view of Iguchi (US Pub. No. 2019/0267357). Regarding claims 4-5, the combination of Han and Lowes appears not to explicitly disclose a color filter on the first nanoporous structure and the second nanoporous structure and a plurality of micro-lenses fabricated on the color filter. However, in FIG. 14, Iguchi discloses a similar light-emitting apparatus wherein a color filter (28) is formed on the first nanoporous structure (7) and the second nanoporous structure (8) to absorb blue light (paragraph [0133]) and a plurality of micro-lenses (25Lx) are fabricated on the color filter to converge the emitted light (paragraph [0070]). To absorb blue light in the red and green pixels and to converge the emitted light it would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains to form a color filter on the first nanoporous structure and the second nanoporous structure and form a plurality of micro-lenses fabricated on the color filter. Claim 9 is rejected under 35 U.S.C. 103 as being unpatentable over Han (US Pub. No. 2020/0152841) in view of Lowes (US Pub. No. 2012/0049214) as applied to claim 1, and further in view of Kim (US Pub. No. 2023/0170448). Regarding claim 9, the combination of Han and Lowes appears not to explicitly discloses that each of the first light-emitting device, the second light-emitting device, and the third light-emitting device is a micro light-emitting device. The art however well recognized micro light-emitting devices to be suitable for use as LEDs in a high-resolution display. See, for example, Kim, paragraph [0003]. According to well-established patent law precedents (see, for example, M.P.E.P. § 2144.07), therefore, it would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains to have formed the Han disclosed light-emitting devices as micro light-emitting devices for their recognized suitability as LEDs in a high-resolution display. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to TUCKER J WRIGHT whose telephone number is (571)270-3234. The examiner can normally be reached 8:30am-5:00pm. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Matthew Landau can be reached at 571-272-1731. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /TUCKER J WRIGHT/ Primary Examiner, Art Unit 2891
Read full office action

Prosecution Timeline

Jul 14, 2023
Application Filed
Dec 03, 2025
Non-Final Rejection — §103 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
79%
Grant Probability
90%
With Interview (+10.8%)
2y 7m
Median Time to Grant
Low
PTA Risk
Based on 908 resolved cases by this examiner. Grant probability derived from career allow rate.

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