Prosecution Insights
Last updated: July 17, 2026
Application No. 18/369,310

INTERPOSER WITH LINES HAVING PORTIONS SEPARATED BY BARRIER LAYERS

Non-Final OA §102§103§112
Filed
Sep 18, 2023
Priority
Mar 20, 2023 — provisional 63/453,263
Examiner
CHEN, DAVID Z
Art Unit
2815
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Microchip Technology Incorporated
OA Round
1 (Non-Final)
45%
Grant Probability
Moderate
1-2
OA Rounds
9m
Est. Remaining
94%
With Interview

Examiner Intelligence

Grants 45% of resolved cases
45%
Career Allowance Rate
306 granted / 685 resolved
-23.3% vs TC avg
Strong +50% interview lift
Without
With
+49.8%
Interview Lift
resolved cases with interview
Typical timeline
3y 7m
Avg Prosecution
49 currently pending
Career history
751
Total Applications
across all art units

Statute-Specific Performance

§103
78.9%
+38.9% vs TC avg
§102
16.6%
-23.4% vs TC avg
§112
3.9%
-36.1% vs TC avg
Black line = Tech Center average estimate • Based on career data from 685 resolved cases

Office Action

§102 §103 §112
DETAILED ACTION The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103) is incorrect, any correction of the statutory basis for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. Response to Amendment/Restriction Applicant’s election of Group I, Species II, Embodiment 2: Fig. 3 (non-air gap), and Claims 1-4 and 7 in the reply filed on March 20, 2026 is acknowledged. Because applicant did not distinctly and specifically point out the supposed errors in the restriction requirement, the election has been treated as an election without traverse (MPEP § 818.01(a)). Further, Claim 28 directed to “an air gap” is further withdrawn from consideration. Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 23, 29, and 33 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. As to claims 23 and 33, the limitation “the wire line” lacks sufficient antecedent basis. Thus, the limitation renders the claims indefinite and clarification is required. As to claim 29, the limitation” the air gap” lacks sufficient antecedent basis. Thus, the limitation renders the claim indefinite and clarification is required. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. (a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention. Claim(s) 1, 4, 7, 24, 27, and 30 are rejected under 35 U.S.C. 102(a)(1)(2) as being anticipated by U.S. Patent Application Publication No. 2011/0147942 A1 to Yahashi et al. (“Yahashi”). As to claim 1, Yahashi discloses a method for building an interposer, the method comprising: providing a substrate (101) having a surface defining a plane; depositing a first portion (103A) of a metal layer relative to the substrate (101); depositing a first photoresist layer (141, 142) on the first portion (103A) of the metal layer, making a line pattern in the first photoresist layer (141, 142), etching the first portion (103A) of the metal layer through the patterned first photoresist layer (141, 142) to form a first portion (103) of a metal line, and stripping the first photoresist layer (141, 142); depositing a first insulation layer (161) on the first portion (103) of the metal line; depositing a first barrier layer (105) on the first insulation layer (161) and the first portion (103) of the metal line; depositing a second portion (106A) of the metal layer on the first barrier layer (105); depositing a second photoresist layer (143, 144) on the second portion (106A) of the metal layer, making a line pattern in the second photoresist layer (143, 144), etching the second portion (106A) of the metal layer through the patterned second photoresist layer (143, 144) to form a second portion (106) of the metal line wherein the second portion (106) of the metal line is opposite the first portion (103) of the metal line across the barrier layer (105), and stripping the second photoresist layer (143, 144) (See Fig. 5, ¶ 0026, ¶ 0039-¶ 0058) (Notes: the recited “interposer” is met by the structures). As to claim 4, Yahashi further discloses comprising: depositing a pad (109) on the metal line (See ¶ 0053). As to claim 7, Yahashi further discloses wherein the first insulation layer (161) comprises oxide (See ¶ 0044). As to claim 24, Yahashi discloses an interposer manufactured by a method, the method comprising: providing a substrate (101) having a surface defining a plane; depositing a first portion (103A) of a metal layer relative to the substrate (101); depositing a first photoresist layer (141, 142) on the first portion (103A) of the metal layer, making a line pattern in the first photoresist layer (141, 142), etching the first portion (103A) of the metal layer through the patterned first photoresist layer (141, 142) to form a first portion (103) of a metal line, and stripping the first photoresist layer (141, 142); depositing a first insulation layer (161) on the first portion (103) of the metal line; depositing a first barrier layer (105) on the first insulation layer (161) and the first portion (103) of the metal line; depositing a second portion (106A) of the metal layer on the first barrier layer (105); depositing a second photoresist layer (143, 144) on the second portion (106A) of the metal layer, making a line pattern in the second photoresist layer (143, 144), etching the second portion (106A) of the metal layer through the patterned second photoresist layer (143, 144) to form a second portion (106) of the metal line wherein the second portion (106) of the metal line is opposite the first portion (103) of the metal line across the barrier layer (105), and stripping the second photoresist layer (143, 144) (See Fig. 5, ¶ 0026, ¶ 0039-¶ 0058) (Notes: the recited “interposer” is met by the structures). As to claim 27, Yahashi further discloses comprising: depositing a pad (109) on the metal line (See ¶ 0053). As to claim 30, Yahashi further discloses wherein the first insulation layer (161) comprises oxide (See ¶ 0044). Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. The factual inquiries for establishing a background for determining obviousness under 35 U.S.C. 103 are summarized as follows: 1. Determining the scope and contents of the prior art. 2. Ascertaining the differences between the prior art and the claims at issue. 3. Resolving the level of ordinary skill in the pertinent art. 4. Considering objective evidence present in the application indicating obviousness or nonobviousness. This application currently names joint inventors. In considering patentability of the claims the examiner presumes that the subject matter of the various claims was commonly owned as of the effective filing date of the claimed invention(s) absent any evidence to the contrary. Applicant is advised of the obligation under 37 CFR 1.56 to point out the inventor and effective filing dates of each claim that was not commonly owned as of the effective filing date of the later invention in order for the examiner to consider the applicability of 35 U.S.C. 102(b)(2)(C) for any potential 35 U.S.C. 102(a)(2) prior art against the later invention. Claim(s) 2-3, 22, 25-26, and 32 are rejected under 35 U.S.C. 103 as being unpatentable over U.S. Patent Application Publication No. 2011/0147942 A1 to Yahashi et al. (“Yahashi”) as applied to claims 1 and 24 above, and further in view of U.S. Patent Application Publication No. 2015/0028280 A1 to Sciarrillo et al. (“Sciarrillo”). The teaching of Yahashi has been discussed above. As to claims 2 and 25, although Yahashi does not further disclose wherein etching the first portion of the metal layer and etching the second portion of the metal layer comprises dry etching to form first and second portions of the metal line having first and second cross-sections, respectively, perpendicular to the plane that are non-rectangular shapes, Sciarrillo does disclose wherein etching the first portion of the metal layer and etching the second portion of the metal layer comprises dry etching to form first (804) and second (816) portions of the metal line having first and second cross-sections, respectively, perpendicular to the plane that are non-rectangular shapes (See Fig. 7, Fig. 8, ¶ 0085-¶ 0088). In view of the teaching of Sciarrillo, it would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to modify the teaching of Yahashi to have wherein etching the first portion of the metal layer and etching the second portion of the metal layer comprises dry etching to form first and second portions of the metal line having first and second cross-sections, respectively, perpendicular to the plane that are non-rectangular shapes because the dry etching forming the non-rectangular shapes improves the verticality to reduce bit line-to-bit line leakage (See ¶ 0086). As to claims 3 and 26, Yahashi in view of Sciarrillo further discloses wherein the first and second cross-sections respectively comprise a trapezoidal shape (See Sciarrillo Fig. 8). As to claims 22 and 32, although Yahashi does not further disclose wherein the metal line comprises aluminum, Sciarrillo does disclose wherein the metal line comprises aluminum (See ¶ 0018). In view of the teaching of Sciarrillo, it would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to modify the teaching of Yahashi to have wherein the metal line comprises aluminum because aluminum along with other metals of tungsten, copper, titanium, and etc. are well-known materials having low resistance for the metal line (See ¶ 0018). Claim(s) 21 and 31 are rejected under 35 U.S.C. 103 as being unpatentable over U.S. Patent Application Publication No. 2011/0147942 A1 to Yahashi et al. (“Yahashi”) as applied to claims 1 and 24 above, and further in view of U.S. Patent Application Publication No. 2009/0097170 A1 to Sato et al. (“Sato”). The teaching of Yahashi has been discussed above. As to claims 21 and 31, although Yahashi discloses wherein the first barrier layer (105) comprises oxide (See ¶ 0044), Yahashi does not further disclose wherein the first barrier layer comprises nitride. However, Sato does disclose wherein the first barrier layer (93) comprises nitride (See Fig. 7, ¶ 0077). In view of the teaching of Sato, it would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to modify the teaching of Yahashi to have wherein the first barrier layer comprises nitride because oxide and nitride are well-known insulating and barrier materials to protect the metal line (See ¶ 0077). Claim(s) 34 is rejected under 35 U.S.C. 103 as being unpatentable over U.S. Patent Application Publication No. 2011/0147942 A1 to Yahashi et al. (“Yahashi”) as applied to claim 24 above, and further in view of U.S. Patent Application Publication No. 2009/0097170 A1 to Sato et al. (“Sato”) and U.S. Patent Application Publication No. 2015/0028280 A1 to Sciarrillo et al. (“Sciarrillo”). The teaching of Yahashi has been discussed above. As to claim 34, although Yahashi wherein the first insulation layer (161) comprises oxide (See ¶ 0044), Yahashi does not further disclose wherein the first barrier layer comprises nitride, and wherein the metal line comprises aluminum. However, Sato does disclose wherein the first barrier layer (93) comprises nitride (See Fig. 7, ¶ 0077). Further, Sciarrillo does disclose wherein the metal line comprises aluminum (See ¶ 0018). In view of the teachings of Sato and Sciarrillo, it would have been obvious to one of ordinary skill in the art before the effective filing date of the claimed invention to modify the teaching of Yahashi to have wherein the first barrier layer comprises nitride, and wherein the metal line comprises aluminum because oxide and nitride are well-known insulating and barrier materials to protect the metal line and aluminum along with other metals of tungsten, copper, titanium, and etc. are well-known materials having low resistance for the metal line (See Sato ¶ 0077 and Sciarrillo ¶ 0018). Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to DAVID CHEN whose telephone number is (571)270-7438. The examiner can normally be reached M-F 12-6. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, JOSHUA BENITEZ can be reached at (571) 270-1435. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /DAVID CHEN/Primary Examiner, Art Unit 2815
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Prosecution Timeline

Sep 18, 2023
Application Filed
Jun 03, 2026
Non-Final Rejection mailed — §102, §103, §112 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
45%
Grant Probability
94%
With Interview (+49.8%)
3y 7m (~9m remaining)
Median Time to Grant
Low
PTA Risk
Based on 685 resolved cases by this examiner. Grant probability derived from career allowance rate.

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