DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Claim Rejections - 35 USC § 112
The following is a quotation of 35 U.S.C. 112(b):
(b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention.
Claims 1, 3-4, and 6-10 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention.
Claim 1 recites “wherein when the first pin receives a positive electrostatic discharge voltage and the second pin is grounded, junction breakdown occurs at an interface between the N-type doped area and the P-type substrate.” Examiner notes that it is unclear whether claims are directed to the device itself is or the operation of the device (i.e. the method, see MPEP 2173.05(p) II)
Therefore, claim 1 is rejected for being indefinite, and claims 3-4 and 6-10 are rejected for at least their dependencies.
For the purposes of Examination, the limitation “wherein when the first pin receives a positive electrostatic discharge voltage and the second pin is grounded, junction breakdown occurs at an interface between the N-type doped area and the P-type substrate” will not given patentable weight.
Claim Rejections - 35 USC § 102
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.
Claim(s) 1 and 7-8 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Salcedo et al. (US 20140167106 A1, hereinafter Salcedo)
With regards to claim 1, Salcedo discloses an electrostatic discharge (ESD) protection device comprising:
a P-type substrate; (P substrate 49)
an N-type well (N well 43b) formed in the P-type substrate;
a first P-type heavily-doped area (P+ 44f) formed in the N-type well; and
an N-type doped area (N+ 45b) and a first N-type heavily-doped area (N+ 45a) formed in the P-type substrate,
wherein the N-type doped area is coupled to the N-type well through an external conductive wire (VDD wire) and the external conductive wire is decoupled to the first P-type heavily-doped area; (See FIG. 2B, where the VDD wire is not coupled (i.e. decoupled) from the region 44f)
a second P-type heavily-doped area (P+ 44a) formed in the P-type substrate, wherein the N-type doped area is formed between the first N-type heavily-doped area and the second P-type heavily-doped area. (see FIG. 2b) wherein the first P-type heavily-doped area is coupled to a first pin, (IO 2) the first pin is decoupled to the external conductive wire, and the first N- type heavily-doped area and the P-type substrate are coupled to a second pin. (See FIG. 2B, showing the coupling/decoupling)
wherein when the first pin receives a positive electrostatic discharge voltage and the second pin is grounded, junction breakdown occurs at an interface between the N-type doped area and the P-type substrate. (see 35 USC 112b rejection, where this limitation will not be given patentable weight)
With regards to claim 7, Salcedo discloses the electrostatic discharge protection device according to claim 1, wherein the P-type substrate has a region (region comprising at least dielectric 48 and 46c) between the N-type doped area and the first N-type heavily-doped area, a dielectric layer (dielectric 48) and a conductive gate (gate 46c) are sequentially formed on the region, and the conductive gate is coupled to the external conductive wire. (see FIG. 2b, showing the coupling via 44c)
With regards to claim 8, Salcedo discloses the electrostatic discharge protection device according to claim 1, wherein the P-type substrate has a region (region comprising at least dielectric 48 and 46c) between the N-type doped area and the first N-type heavily-doped area, a dielectric layer (dielectric 48) and a conductive gate (gate 46c) 0are sequentially formed on the region, and the conductive gate is coupled to the first N-type heavily-doped area.
Allowable Subject Matter
Claims 11-19 are allowed.
Response to Arguments
Applicant's arguments filed 02/24/2026 have been fully considered but they are not persuasive.
Examiner notes that, based on the new amendment to the claims, claims 1, 3-4, and 6-10 are currently rejected under 35 USC 112(b) for indefiniteness as described above.
Conclusion
Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a).
A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action.
Any inquiry concerning this communication or earlier communications from the examiner should be directed to STEVEN M Page whose telephone number is (571)272-3249. The examiner can normally be reached M-F: 10:00AM-6:00PM.
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If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Christine S. Kim can be reached at 571-272-8548. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
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/STEVEN M PAGE/Primary Patent Examiner, Art Unit 2812