Tech Center 2800 • Art Units: 2812
This examiner grants 83% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18469627 | INTEGRATED CIRCUIT INCLUDING STANDARD CELLS AND METHOD OF DESIGNING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18367183 | INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18169721 | SEMICONDUCTOR DEVICE HAVING LOW-BANDGAP INTERFACIAL LAYER IN THE CAPACITOR | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18396447 | DISPLAY DEVICE | Non-Final OA | LG Display Co., Ltd. |
| 18237419 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | Samsung Display Co., Ltd. |
| 18391416 | PUMP-OUT RESISTANT COLDPLATE | Non-Final OA | Microsoft Technology Licensing, LLC |
| 18466215 | TAPERED INNER SPACER | Final Rejection | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 18147525 | NANOSHEET DEVICE WITH NITRIDE ISOLATION STRUCTURES | Non-Final OA | International Business Machines Corporation |
| 18090816 | INTEGRATED CIRCUIT STRUCTURES HAVING BIT-COST SCALING WITH RELAXED TRANSISTOR AREA | Non-Final OA | Intel Corporation |
| 18076130 | LINED CONDUCTIVE STRUCTURES FOR TRENCH CONTACT | Non-Final OA | Intel Corporation |
| 17955209 | FERROELECTRIC TUNNEL JUNCTION DEVICES FOR LOW VOLTAGE AND LOW TEMPERATURE OPERATION | Non-Final OA | Intel Corporation |
| 18468533 | INTEGRATED DEVICES COUPLED TO INTERPOSER COMPRISING POROUS PORTION | Non-Final OA | QUALCOMM Incorporated |
| 18468551 | SEMICONDUCTOR DEVICE HAVING STACKED STRUCTURE AND METHOD FOR MANUFACTURING THE SAME | Non-Final OA | SK hynix Inc. |
| 18456231 | SEMICONDUCTOR STRUCTURE, FABRICATION METHOD THEREOF, AND MEMORY SYSTEM | Non-Final OA | YANGTZE MEMORY TECHNOLOGIES CO., LTD. |
| 18155682 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Winbond Electronics Corp. |
| 17994393 | MEMORY DEVICE AND METHOD OF FORMING THE SAME | Non-Final OA | Winbond Electronics Corp. |
| 18377785 | MEMORY DEVICE AND FABRICATION METHOD THEREOF | Non-Final OA | NANYA TECHNOLOGY CORPORATION |
| 18305375 | SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME | Final Rejection | NANYA TECHNOLOGY CORPORATION |
| 18223560 | MEMORY CELL STRUCTURE | Final Rejection | Invention And Collaboration Laboratory Pte. Ltd. |
| 18373173 | ELECTROSTATIC DISCHARGE (ESD) PROTECTION DEVICE | Final Rejection | AMAZING MICROELECTRONIC CORP. |
| 18167138 | SEMICONDUCTOR STRUCTURE AND METHOD FOR PREPARING SEMICONDUCTOR STRUCTURE | Final Rejection | CHANGXIN MEMORY TECHNOLOGIES, INC. |
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