Prosecution Insights
Last updated: May 29, 2026
Application No. 18/375,509

LOW-STRESS NBN SUPERCONDUCTING THIN FILM AND PREPARATION METHOD AND APPLICATION THEREOF

Non-Final OA §112
Filed
Sep 30, 2023
Priority
Apr 03, 2023 — CN 202310369719.1
Examiner
LEE, SHUN K
Art Unit
2884
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Zhejiang Lab
OA Round
2 (Non-Final)
42%
Grant Probability
Moderate
2-3
OA Rounds
10m
Est. Remaining
58%
With Interview

Examiner Intelligence

Grants 42% of resolved cases
42%
Career Allowance Rate
295 granted / 704 resolved
-26.1% vs TC avg
Strong +16% interview lift
Without
With
+15.7%
Interview Lift
resolved cases with interview
Typical timeline
3y 6m
Avg Prosecution
36 currently pending
Career history
763
Total Applications
across all art units

Statute-Specific Performance

§101
0.7%
-39.3% vs TC avg
§103
85.4%
+45.4% vs TC avg
§102
5.0%
-35.0% vs TC avg
§112
4.2%
-35.8% vs TC avg
Black line = Tech Center average estimate • Based on career data from 704 resolved cases

Office Action

§112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Objections Claim(s) 8 is/are objected to because of the following informalities: (a) in claim 8, “the NbN superconducting thin film” on lines 3-4 should probably be --the NbN superconducting thin films-- (antecedent basis). Appropriate correction is required. Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(a): (a) IN GENERAL.—The specification shall contain a written description of the invention, and of the manner and process of making and using it, in such full, clear, concise, and exact terms as to enable any person skilled in the art to which it pertains, or with which it is most nearly connected, to make and use the same, and shall set forth the best mode contemplated by the inventor or joint inventor of carrying out the invention. The following is a quotation of the first paragraph of pre-AIA 35 U.S.C. 112: The specification shall contain a written description of the invention, and of the manner and process of making and using it, in such full, clear, concise, and exact terms as to enable any person skilled in the art to which it pertains, or with which it is most nearly connected, to make and use the same and shall set forth the best mode contemplated by the inventor of carrying out his invention. Claim(s) 1 and 5-10 is/are rejected under 35 U.S.C. 112(a) or pre-AIA 35 U.S.C. 112, first paragraph, as failing to comply with the written description requirement. The claim(s) contains subject matter which was not described in the specification in such a way as to reasonably convey to one skilled in the relevant art that the inventor or a joint inventor, or for pre-AIA the inventor(s), at the time the application was filed, had possession of the claimed invention. While the specification discloses a 59 sccm Ar flow rate for ion cleaning by an argon ion beam (e.g., see “… Ion cleaning parameter … Vacuum degree (x10-8 Torr) … 3.6 … Ar flowrate (sccm) … 59 … Ion source power (W) … 50 … Working pressure (mTorr) … 10 … Time (s) … 180 …” in the “TABLE 1” cited by applicant and also described as “… Before pre­sputtering, ion cleaning is carried out on the substrate for 1-3 min to remove impurity ions from the surface of the substrate, wherein an argon ion beam is used for the ion cleaning, the ion cleaning is performed in a vacuum environment under the vacuum degree of less than 5.0x10-8 Torr, the argon flow rate of 20-100 sccm …” on pg. 6, lines 22+), there does not appear to be any disclosure of providing metal Nb targets and Si-based substrates, fixing the Si-based substrates at room temperature, adjusting the mass flow ratio of N2/Ar to 20%-25%, a sputtering power to 200-300W, a deposition pressure to 3.0-8.0 mTorr, and NbN superconducting thin films with a stress range of -100MPa~100MPa and a thickness of 70-150nm are deposited on the Si-based substrates; wherein Ar flow rate is 59 sccm. Therefore, there does not appear to be a written description of the claim limitation “providing metal Nb targets and Si-based substrates, fixing the Si-based substrates at room temperature, adjusting the mass flow ratio of N2/Ar to 20%-25%[[40%]], a sputtering power to 200-300W, a deposition pressure to 3.0-8.0-100MPa~100MPa; wherein Ar flow rate is 59 sccm” in the application as filed. Claim(s) dependent on the claim(s) discussed above also fail(s) to comply with the written description requirement for the same reasons. Response to Arguments Applicant’s arguments with respect to the amended claims have been fully considered but are moot in view of the new ground(s) of rejection. Conclusion Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to Shun Lee whose telephone number is (571)272-2439. The examiner can normally be reached Monday-Friday. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, David Makiya can be reached at (571)272-2273. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /SL/ Examiner, Art Unit 2884 /DAVID J MAKIYA/Supervisory Patent Examiner, Art Unit 2884
Read full office action

Prosecution Timeline

Sep 30, 2023
Application Filed
Jun 11, 2025
Non-Final Rejection mailed — §112
Sep 11, 2025
Response Filed
Oct 29, 2025
Final Rejection mailed — §112
Jan 27, 2026
Response after Non-Final Action

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

2-3
Expected OA Rounds
42%
Grant Probability
58%
With Interview (+15.7%)
3y 6m (~10m remaining)
Median Time to Grant
Moderate
PTA Risk
Based on 704 resolved cases by this examiner. Grant probability derived from career allowance rate.

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