DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Claim Rejections - 35 USC § 112
The following is a quotation of 35 U.S.C. 112(b):
(b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention.
The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph:
The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention.
Claims 7-9, 13, and 15-16 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention.
Claims 7-8 recite the limitation "the recirculation plenum" in Claim 5. There is insufficient antecedent basis for this limitation in the claim. Claim 5 does not recite “a recirculation plenum”.
Claim 9 directly depend on Claim 8.
Claim 13 recites the limitation "the recirculation plenum" in Claim 12. There is insufficient antecedent basis for this limitation in the claim. Claim 12 does not recite “a recirculation plenum”.
Claims 15-16 recite the limitation "the recirculation plenum" in Claim 14. There is insufficient antecedent basis for this limitation in the claim. Claim 14 does not recite “a recirculation plenum”.
Allowable Subject Matter
Claims 1-6, 10-12, 14, and 17-20 are allowed.
Claims 7-9, 13, and 15-16 would be allowable if rewritten to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action and to include all of the limitations of the base claim and any intervening claims.
The following is a statement of reasons for the indication of allowable subject matter:
Regarding Claim 1, the closest prior art, Ghosh et al. (US 2018/0274095 A1) reference discloses a semiconductor manufacturing processing chamber comprising: a chamber body having a sidewall, bottom and lid enclosing an interior (Figure 1, numerals 144 – chamber body, 130 – sidewall, 124-bottom, and 106 – lid); a substrate support within the interior of the chamber body, the substrate support having a support surface spaced a distance from the chamber lid to create a process region (Figure 1, numeral 126 - substrate); a gas inlet configured to provide a flow of gas to the process region (Figure 1, numeral 107 – gas inlet); a pumping region and a pumping port (Figure 1, numerals 148 and 116), and a lift mechanism that is configured to move the pedestal assembly between a raised position and lowered position (Figures 1 and 2, numerals 134 – lift mechanism, 120 – pedestal assembly and Figure 2 – lowered position and Figure 1, raised position). However, Ghosh et al. does not disclose an exhaust plenum in fluid communication with the process region; at least one exhaust piston valve connecting the exhaust plenum with an exhaust line and a recirculation inlet line, the at least one piston valve configured to provide fluid communication between one of the exhaust line or the recirculation inlet line; and a recirculation housing in fluid communication with the recirculation inlet line. There is no motivation/suggestion to modify the semiconductor chamber of Ghosh et al. with the claimed piston valve, exhaust plenum and recirculation inlet line.
Claims 2-16 directly or indirectly depend on Claim 1.
Regarding Claim 17, the closest prior art, Ghosh et al. (US 2018/0274095 A1) 17 reference discloses a semiconductor manufacturing processing chamber comprising: a semiconductor manufacturing processing chamber comprising: a chamber body having a sidewall, bottom and lid enclosing an interior (Figure 1, numerals 144 – chamber body, 130 – sidewall, 124-bottom, and 106 – lid); a substrate support within the interior of the chamber body, the substrate support having a support surface spaced a distance from the chamber lid to create a process region (Figure 1, numeral 126 - substrate); a gas inlet configured to provide a flow of gas to the process region (Figure 1, numeral 107 – gas inlet), the gas inlet comprising a backer plate spaced a distance from a showerhead to form an inlet plenum, the inlet plenum in fluid communication with the process region through the showerhead (Figure 1, numerals 110 – gas distribution assembly,109 – backer plate); a pumping region and a pumping port (Figure 1, numerals 148 and 116), and a lift mechanism that is configured to move the pedestal assembly between a raised position and lowered position (Figures 1 and 2, numerals 134 – lift mechanism, 120 – pedestal assembly and Figure 2 – lowered position and Figure 1, raised position). However, Ghosh et al does not disclose an exhaust plenum in fluid communication with the process region; a recirculation housing on the lid of the processing chamber, the recirculation housing is a piston pump having a recirculation plenum bounded by a movable wall, a bellows and fixed wall, the recirculation plenum in fluid communication with a recirculation inlet line and a recirculation outlet line; at least one exhaust piston valve connecting the exhaust plenum with an exhaust line and the recirculation inlet line, the at least one piston valve configured to provide fluid communication between one of the exhaust line or the recirculation inlet line; and an ampoule connection in fluid communication with the recirculation plenum through the recirculation outlet line and a recirculation piston valve. There is no motivation/suggestion to modify the semiconductor chamber of Ghosh et al. with the claimed piston valve, exhaust plenum and recirculation inlet line, exhaust plenum.
Regarding Claim 18, the closest prior art, Ghosh et al. (US 2018/0274095 A1) 17 reference discloses a method of recycling a semiconductor manufacturing metal precursor, the method comprising directing a gas from a process region of a processing chamber through a pedestal assembly and pumping region and pumping port (Figure 1, numerals 144 – chamber body, 148 – pumping region and 116- pumping port and Figures 1 and 2, numerals 134 – lift mechanism, 120 – pedestal assembly and Figure 2 – lowered position and Figure 1, raised position). However, Ghosh et al. does not disclose a method steps of directing a gas from a process region of a processing chamber from an recirculation plenum at least one fast-acting valve and a recirculation inlet line; and directing the gas from the recirculation plenum to an ampoule through a recirculation outlet line and a recirculation valve. There is no motivation/suggestion to modify the method steps of Ghosh et al. with the steps.
Claims 19-20 directly depend on Claim 18.
Conclusion
Any inquiry concerning this communication or earlier communications from the examiner should be directed to HUY-TRAM NGUYEN whose telephone number is (571)270-3167. The examiner can normally be reached M-W, 7:00am - 3pm, EST.
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/HUY TRAM NGUYEN/Examiner, Art Unit 1774
