Prosecution Insights
Last updated: April 19, 2026
Application No. 18/396,771

BIMETALLIC FUSE ELEMENT BETWEEN METAL LEVELS

Non-Final OA §102§103
Filed
Dec 27, 2023
Examiner
SEVEN, EVREN
Art Unit
2812
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
International Business Machines Corporation
OA Round
1 (Non-Final)
74%
Grant Probability
Favorable
1-2
OA Rounds
2y 4m
To Grant
82%
With Interview

Examiner Intelligence

Grants 74% — above average
74%
Career Allow Rate
532 granted / 723 resolved
+5.6% vs TC avg
Moderate +8% lift
Without
With
+8.3%
Interview Lift
resolved cases with interview
Typical timeline
2y 4m
Avg Prosecution
29 currently pending
Career history
752
Total Applications
across all art units

Statute-Specific Performance

§101
2.3%
-37.7% vs TC avg
§103
51.9%
+11.9% vs TC avg
§102
23.1%
-16.9% vs TC avg
§112
20.3%
-19.7% vs TC avg
Black line = Tech Center average estimate • Based on career data from 723 resolved cases

Office Action

§102 §103
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1,3-6, 8, 10-13, 15, 17-19 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by U.S. Pat. Pub. No. 20120248567 Lu-Chen Hsu et al. (Hsu). Regarding Claim 1, Hsu teaches in Fig. 2C at least, a fuse element comprising: a first bimetallic pillar disposed between and electrically connecting a first metal level 114b to a second metal level 252b, wherein the first bimetallic pillar comprises a first metal strip 234b adjacent to a second metal strip 132b. Regarding Claim 3, Hsu teaches the fuse element according to claim 1, wherein a resistivity of the second metal strip is greater than a resistivity of the first metal strip (first strip is Cu or Al, second is Ti or Ta, [0011-0012]). Regarding Claim 4, Hsu teaches the fuse element according to claim 1, further comprising: a metal via 134c disposed between, and electrically connecting, a lower metal line of the first metal level to a first upper metal line of the second metal level, wherein the bimetallic pillar is disposed between, and electrically connecting, the lower metal line of the first metal level to a second upper metal line of the second metal level (see Fig. 2C). Regarding Claim 5, Hsu teaches the fuse element according to claim 4, wherein the metal via comprises a barrier layer 132a surrounding vertical side surfaces and a lower horizontal surface of the metal via, wherein the barrier layer comprises the same material as the second metal strip (all 132x are the same material, [0017]). Regarding Claim 6, Hsu teaches the element according to claim 1, wherein the second metal strip directly contacts a sidewall and a bottom surface of the first metal strip (see Fig. 2C). Regarding Claim 8, Hsu teaches a fuse element comprising: a first bimetallic pillar disposed between and electrically connecting a first metal level 114b to a second metal level 252b, wherein the first bimetallic pillar comprises a first metal strip 234b adjacent to a second metal strip 132b, and wherein a first width (bottom portion of 132b contacting 114b) of the second metal strip is substantially equal to a width of the first bimetallic pillar (see Fig. 2C). Regarding Claim 10, Hsu teaches the fuse element according to claim 8, wherein a resistivity of the second metal strip is greater than a resistivity of the first metal strip (first strip is Cu or Al, second is Ti or Ta, [0011-0012]). Regarding Claim 11, Hsu teaches the fuse element according to claim 8, further comprising: a metal via disposed between, and electrically connecting, a lower metal line of the first metal level to a first upper metal line of the second metal level, wherein the first bimetallic pillar is disposed between, and electrically connecting, the lower metal line of the first metal level to a second upper metal line of the second metal level (see above rejection of Claim 4). Regarding Claim 12, Hsu teaches the fuse element according to claim 11, wherein the metal via comprises a barrier layer surrounding vertical side surfaces and a lower horizontal surface of the metal via, wherein the barrier layer comprises the same material as the second metal strip (all 132x are the same material, [0017]). Regarding Claim 13, Hsu teaches the fuse element according to claim 8, wherein the second metal strip directly contacts a sidewall and a bottom surface of the first metal strip (see Fig. 2C). Regarding Claim 15, Hsu teaches a fuse element comprising: a first bimetallic pillar disposed between and electrically connecting a first metal level 114b to a second metal level 252b, wherein the first bimetallic pillar comprises a first metal strip 234b adjacent to a second metal strip 132b, wherein the second metal strip is physically disposed between a bottom surface of the first metal strip and the first metal level (see Fig. 2C). Regarding Claim 17, Hsu teaches the fuse element according to claim 15, wherein a resistivity of the second metal strip is greater than a resistivity of the first metal strip (first strip is Cu or Al, second is Ti or Ta, [0011-0012]). Regarding Claim 18, Hsu teaches the fuse element according to claim 15, further comprising: a metal via 134cdisposed between, and electrically connecting, a lower metal line 114a of the first metal level 114 to a first upper metal line 254a of the second metal level 254, wherein the first bimetallic pillar is disposed between, and electrically connecting, the lower metal line of the first metal level to a second upper metal line of the second metal level, wherein the metal via comprises a barrier layer 132a surrounding vertical side surfaces and a lower horizontal surface of the metal via, wherein the barrier layer comprises the same material as the second metal strip (all 132x are the same material, [0017]). Regarding Claim 19, Hsu teaches the fuse element according to claim 15, wherein the second metal strip directly contacts a sidewall and a bottom surface of the first metal strip (see Fig. 2C). Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 2, 7, 9, 14, 16 and 20 are rejected under 35 U.S.C. 103 as being unpatentable over Hsu. Regarding Claims 2, 9 and 16, Hsu teaches the fuse element according to claims 1, 8, and 15 wherein a width of the first metal strip 234b is less than a first width (bottom portion of 132b contacting 114b) of the second metal strip, but do not explicitly teach that a second width of the second metal strip is substantially equal to a width of the first bimetallic pillar. However, the width/ thickness of a fuse structure directly affects its current carrying capability, and as a result directly affects the threshold at which disconnection occurs, and is therefore a result effective variable that may be optimized by the person of ordinary skill (MPEP 2144.05(II)(B)). Regarding Claims 7, 14 and 20, Hsu teaches the fuse element according to claims 1, 8 and 15, bu do not explicitly teach: a second bimetallic pillar disposed between and electrically connecting the first metal level to the second metal level, wherein both the first bimetallic pillar and the second bimetallic pillar are disposed between, and electrically connect, a lower metal line of the first metal level to an upper metal line of the second metal level. However, these claim limitations amount to mere duplication of parts (MPEP 2144.04(VI)(B)) as no unexpected result is produced, rather only the expected result of additional fuse coupled contacts. Examiner’s Note Amendments directed at opposite sidewalls of the first and second metal strips being in contact with interlayer dielectric also between the first and second metal levels will quickly advance prosecution. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to EVREN SEVEN whose telephone number is (571)270-5666. The examiner can normally be reached Mon-Fri 8:00- 5:00 Pacific. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Christine Kim can be reached at (571) 272-8458. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /EVREN SEVEN/Primary Examiner, Art Unit 2812
Read full office action

Prosecution Timeline

Dec 27, 2023
Application Filed
Feb 16, 2026
Non-Final Rejection — §102, §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

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PROBE CARD CONFIGURED TO CONNECT TO A PROBE PAD LOCATED IN SAW STREET OF A SEMICONDUCTOR WAFER
2y 5m to grant Granted Apr 14, 2026
Patent 12598748
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
2y 5m to grant Granted Apr 07, 2026
Patent 12598701
SEMICONDUCTOR DEVICE WITH SELECTION STRUCTURE AND METHOD FOR FABRICATING THE SAME
2y 5m to grant Granted Apr 07, 2026
Patent 12586736
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2y 5m to grant Granted Mar 24, 2026
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PACKAGE STRUCTURE AND FORMING METHOD THEREOF
2y 5m to grant Granted Mar 24, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
74%
Grant Probability
82%
With Interview (+8.3%)
2y 4m
Median Time to Grant
Low
PTA Risk
Based on 723 resolved cases by this examiner. Grant probability derived from career allow rate.

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