Last updated: July 17, 2026

Application No. 18/398,370

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THEREOF

Non-Final OA

Filed

Dec 28, 2023

Priority

Jun 13, 2023 — RE 10-2023-0075672

Examiner

MCCUTCHEON, COLIN RUSSELL

Art Unit

2892

Tech Center

2800 — Semiconductors & Electrical Systems

Assignee

Samsung Electronics Co., Ltd.

OA Round

1 (Non-Final)

Interview Optional

— +21.9% interview lift. Interview already conducted in this application's prosecution history. This examiner has a 86% grant rate with +21.9% interview lift. Since an interview has already been tried, recommend written response with narrowed claims based on precedent claim evolution patterns.

Based on 50 resolved cases, 2023–2026

Examiner Intelligence

MCCUTCHEON, COLIN RUSSELL View full profile →

Grants 86% — above average

Career Allowance Rate

43 granted / 50 resolved

+18.0% vs TC avg

Strong +22% interview lift

Without

With

+21.9%

Interview Lift

resolved cases with interview

Typical timeline

3y 3m

Avg Prosecution

23 currently pending

Career history

Total Applications

across all art units

Statute-Specific Performance

§103

85.9%

+45.9% vs TC avg

§102

12.7%

-27.3% vs TC avg

§112

1.4%

-38.6% vs TC avg

Black line = Tech Center average estimate • Based on career data from 50 resolved cases

Prosecution Timeline

Dec 28, 2023

Application Filed

Jun 05, 2026

Non-Final Rejection mailed

Jun 23, 2026

Interview Requested

Jun 30, 2026

Examiner Interview Summary

Jun 30, 2026

Applicant Interview (Telephonic)

Precedent Cases

Applications granted by this same examiner with similar technology

17/814,243

Patent 12685027

MRAM STRUCTURE WITH RAISED EDGE OF TUNNEL BARRIER LAYER

3y 11m to grant Granted Jul 14, 2026

17/919,393

Patent 12672457

STRETCHABLE DISPLAY PANEL AND MANUFACTURING METHOD THEREFOR

3y 8m to grant Granted Jun 30, 2026

18/198,089

Patent 12672386

CHIP WET-TRANSFERRING DEVICE

3y 1m to grant Granted Jun 30, 2026

17/882,869

Patent 12660334

BACKSIDE DEEP TRENCH ISOLATION (BDTI) STRUCTURE FOR CMOS IMAGE SENSOR

3y 10m to grant Granted Jun 16, 2026

17/942,308

Patent 12660268

SILICON CARBIDE SUBSTRATE INCLUDING MULTIPLE SEMICONDUCTOR LAYERS HAVING A HIGH BREAK DOWN VOLTAGE

3y 9m to grant Granted Jun 16, 2026

Study what changed to get past this examiner. Based on 5 most recent grants.

Strategy Recommendation AI-generated — please review before filing

Get a prosecution strategy drawn from examiner precedents, rejection analysis, and claim mapping.

Typically takes 5-10 seconds — AI-generated, attorney review required before filing

Prosecution Projections

1-2

Expected OA Rounds

86%

Grant Probability

99%

With Interview (+21.9%)

3y 3m (~9m remaining)

Median Time to Grant

Low

PTA Risk

Based on 50 resolved cases by this examiner. Grant probability derived from career allowance rate.