DETAILED ACTION This Action is responsive to the communication filed on 12/29/2023. Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA. In the event the determination of the status of the application as subject to AIA 35 U.S.C. 102 and 103 is incorrect, any correction of the statutory basis ( i.e. , changing from AIA to pre-AIA ) for the rejection will not be considered a new ground of rejection if the prior art relied upon, and the rationale supporting the rejection, would be the same under either status. Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. Claims 1-21 are rejected under 35 U.S.C. 112(b) as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor, regards as the invention. Claim 1, in lines 4-5, recites the following limitation: “a drain ohmic contact between the source ohmic contact and the drain ohmic contact.” It is unclear how the drain ohmic contact is between the source ohmic contact and the drain ohmic contact. Therefore, the limitation has been rendered indefinite. Claim 1 recites the limitation "the floating ohmic contact" in line 7. There is insufficient antecedent basis for this limitation in the claim. Claim 1 recites the limitation "the floating ohmic contact" in line 8. There is insufficient antecedent basis for this limitation in the claim. Claim 1 recites the limitation "the floating ohmic contact" in line 10. There is insufficient antecedent basis for this limitation in the claim. Claim 1 recites the limitation "the floating ohmic contact" in line 12. There is insufficient antecedent basis for this limitation in the claim. Claims 2-21 are rejected under 35 U.S.C. 112(b) as being indefinite due to the claims’ dependency to Claim 1. Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 22-24 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Nidhi (US 2020/ 0373297 ). Regarding claim 22, Nidhi (see, e.g. , FIG. 2) discloses a mobile terminal with power amplifier circuitry having a dual-gate HEMT, the dual-gate HEMT comprising: a substrate 108 (Para 0030) ; a body region 112, 140-1, 140-2, 250, 252 over the substrate 108 comprising: a source ohmic contact 140-1 , a drain ohmic contact 140-2 , and a floating ohmic contact 250, 252 between the source ohmic contact 140-1 and the drain ohmic contact 140-2 (Para 0041, Para 0064) ; and a channel layer 112 having a first portion e.g. , left portion of 112 between the source ohmic contact 140-1 and the floating ohmic contact 250, 252 and a second portion e.g. , right portion of 112 between the drain ohmic contact 140-2 and the floating ohmic contact 250, 252 (Para 0034) ; a first gate electrode 142 over the first portion e.g. , left portion of 112 of the channel layer 112 and between the source ohmic contact 140-1 and the floating ohmic contact 250, 252 (Para 0042) ; and a second gate electrode 144 over the second portion e.g. , right portion of 112 of the channel layer 112 and between the drain ohmic contact 140-2 and the floating ohmic contact 250, 252 (Para 0042) . Regarding claim 23, Nidhi (see, e.g. , FIG. 2) discloses a user device with power amplifier circuitry having a dual-gate HEMT, the dual-gate HEMT comprising: a substrate 108 (Para 0030) ; a body region 112, 140-1, 140-2, 250, 252 over the substrate 108 comprising: a source ohmic contact 140-1 , a drain ohmic contact 140-2 , and a floating ohmic contact 250, 252 between the source ohmic contact 140-1 and the drain ohmic contact 140-2 (Para 0041, Para 0064) ; and a channel layer 112 having a first portion e.g. , left portion of 112 between the source ohmic contact 140-1 and the floating ohmic contact 250, 252 and a second portion e.g. , right portion of 112 between the drain ohmic contact 140-2 and the floating ohmic contact 250, 252 (Para 0034) ; a first gate electrode 142 over the first portion e.g. , left portion of 112 of the channel layer 112 and between the source ohmic contact 140-1 and the floating ohmic contact 250, 252 (Para 0042) ; and a second gate electrode 144 over the second portion e.g. , right portion of 112 of the channel layer 112 and between the drain ohmic contact 140-2 and the floating ohmic contact 250, 252 (Para 0042) . Regarding claim 24, Nidhi (see, e.g. , FIG. 2) discloses a method of fabricating a semiconductor structure, comprising: providing a substrate 108 (Para 0030) ; providing a body region 112, 140-1, 140-2, 250, 252 over the substrate 108 , wherein: a source ohmic contact 140-1 , a drain ohmic contact 140-2 , and a floating ohmic contact 250, 252 between the source ohmic contact 140-1 and the drain ohmic contact 140-2 are formed (Para 0041, Para 0064) ; and forming a channel layer 112 having a first portion e.g. , left portion of 112 between the source ohmic contact 140-1 and the floating ohmic contact 250, 252 and a second portion e.g. , right portion of 112 between the drain ohmic contact 140-2 and the floating ohmic contact 250, 252 (Para 0034) ; forming a first gate electrode 142 over the first portion e.g. , left portion of 112 of the channel layer 112 and between the source ohmic contact 140-1 and the floating ohmic contact 250, 252 (Para 0042) ; and forming a second gate electrode 144 over the second portion e.g. , right portion of 112 of the channel layer 112 and between the drain ohmic contact 140-2 and the floating ohmic contact 250, 252 (Para 0042) . Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to FILLIN "Examiner name" \* MERGEFORMAT ANTONIO CRITE whose telephone number is FILLIN "Phone number" \* MERGEFORMAT (571) 270-5267 . The examiner can normally be reached FILLIN "Work Schedule?" \* MERGEFORMAT Monday - Friday, 10:00 am - 6:30 pm . Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, FILLIN "SPE Name?" \* MERGEFORMAT Kretelia Graham can be reached at FILLIN "SPE Phone?" \* MERGEFORMAT (571) 272-5055 . The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /ANTONIO B CRITE/ Primary Examiner, Art Unit 2817