Prosecution Insights
Last updated: April 19, 2026
Application No. 18/448,852

METHOD OF FORMING STACKED CAPACITORS THROUGH WAFER BONDING

Non-Final OA §112
Filed
Aug 11, 2023
Examiner
PHAM, THANHHA S
Art Unit
2812
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Kepler Computing Inc.
OA Round
1 (Non-Final)
85%
Grant Probability
Favorable
1-2
OA Rounds
2y 5m
To Grant
90%
With Interview

Examiner Intelligence

Grants 85% — above average
85%
Career Allow Rate
742 granted / 872 resolved
+17.1% vs TC avg
Minimal +5% lift
Without
With
+4.9%
Interview Lift
resolved cases with interview
Typical timeline
2y 5m
Avg Prosecution
22 currently pending
Career history
894
Total Applications
across all art units

Statute-Specific Performance

§103
33.6%
-6.4% vs TC avg
§102
35.5%
-4.5% vs TC avg
§112
23.4%
-16.6% vs TC avg
Black line = Tech Center average estimate • Based on career data from 872 resolved cases

Office Action

§112
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 112 The following is a quotation of 35 U.S.C. 112(b): (b) CONCLUSION.—The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the inventor or a joint inventor regards as the invention. The following is a quotation of 35 U.S.C. 112 (pre-AIA ), second paragraph: The specification shall conclude with one or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention. Claims 1-23 are rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being indefinite for failing to particularly point out and distinctly claim the subject matter which the inventor or a joint inventor (or for applications subject to pre-AIA 35 U.S.C. 112, the applicant), regards as the invention. ► With respect to claim 1, It is not clear that “a second non-linear polar dielectric material having a form ABC, wherein A and B are two different cations, wherein C is Oxygen or Nitrogen, and wherein B is combined with a second dopant” is the same material or a different material to “a first non-linear polar dielectric material having a form ABC, wherein A and B are two different cations, wherein C is Oxygen or Nitrogen, and wherein B is combined with a first dopant”. ***Suggestion: change “a second non-linear polar dielectric material having a form ABC, wherein A and B are two different cations, wherein C is Oxygen or Nitrogen, and wherein B is combined with a second dopant” to “a second non-linear polar dielectric material having a form A’B’C’, wherein A’ and B’ are two different cations, wherein C’ is Oxygen or Nitrogen, and wherein B’ is combined with a second dopant” In addition, claim 1 rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being incomplete for omitting essential steps, such omission amounting to a gap between the steps. See MPEP § 2172.01. The omitted steps are: step of forming a third conductive layer above the first capacitor after bonding the first conductive layer of a first substrate to a second conductive layer of a second substrate ► With respect to claim 5, Line 3, it is not clear where a fifth conductive layer is deposited Lines 38-39, “wherein the first dopant or the second dopant is a B site dopant and comprises an element from 3d, 4d, 5d, 6d, 4f, or 5f series of periodic table” should be changed to “wherein the first dopant or the second dopant is a B site dopant or a B’ site dopant respectively and comprises an element from 3d, 4d, 5d, 6d, 4f, or 5f series of periodic table” ► With respect to claim 8, Lines 15-17, it is not clear that “a second non-linear polar dielectric material having a form ABC, wherein A and B are two different cations, wherein C is Oxygen or Nitrogen, and wherein B is combined with a second dopant” is the same material or a different material to “a first non-linear polar dielectric material having a form ABC, wherein A and B are two different cations, wherein C is Oxygen or Nitrogen, and wherein B is combined with a first dopant”. ***Suggestion: change “a second non-linear polar dielectric material having a form ABC, wherein A and B are two different cations, wherein C is Oxygen or Nitrogen, and wherein B is combined with a second dopant” to “a second non-linear polar dielectric material having a form A’B’C’, wherein A’ and B’ are two different cations, wherein C’ is Oxygen or Nitrogen, and wherein B’ is combined with a second dopant” ► With respect to claim 20, Line 3, it is not clear where a fifth conductive layer is deposited Lines 38-39, “wherein the first dopant or the second dopant is a B site dopant and comprises an element from 3d, 4d, 5d, 6d, 4f, or 5f series of periodic table” should be changed to “wherein the first dopant or the second dopant is a B site dopant or a B’ site dopant respectively and comprises an element from 3d, 4d, 5d, 6d, 4f, or 5f series of periodic table” ► With respect to claim 21, It is not clear that “a second non-linear polar dielectric material having a form ABC, wherein A and B are two different cations, wherein C is Oxygen or Nitrogen, and wherein B is combined with a second dopant” is the same material or a different material to “a first non-linear polar dielectric material having a form ABC, wherein A and B are two different cations, wherein C is Oxygen or Nitrogen, and wherein B is combined with a first dopant”. ***Suggestion: change “a second non-linear polar dielectric material having a form ABC, wherein A and B are two different cations, wherein C is Oxygen or Nitrogen, and wherein B is combined with a second dopant” to “a second non-linear polar dielectric material having a form A’B’C’, wherein A’ and B’ are two different cations, wherein C’ is Oxygen or Nitrogen, and wherein B’ is combined with a second dopant” In addition, claim 21 is rejected under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), second paragraph, as being incomplete for omitting essential steps, such omission amounting to a gap between the steps. See MPEP § 2172.01. The omitted steps are: step of forming a third conductive layer above the first capacitor after performing the first bonding process wherein B’ is combined with a second dopant” ► With respect to claim 23, Line 3, it is not clear where a fifth conductive layer is deposited Lines 75-76, “wherein the second dopant is a B site dopant and comprises an element from 3d, 4d, 5d, 6d, 4f, or 5f series of periodic table” should be changed to “wherein the second dopant is a B’ site dopant respectively and comprises an element from 3d, 4d, 5d, 6d, 4f, or 5f series of periodic table” Allowable Subject Matter Claims 1, 8 and 21 would be allowable if rewritten or amended to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action. Claims 5, 20 and 23 would be allowable if rewritten to overcome the rejection(s) under 35 U.S.C. 112(b) or 35 U.S.C. 112 (pre-AIA ), 2nd paragraph, set forth in this Office action and to include all of the limitations of the base claim and any intervening claims. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to THANHHA S PHAM whose telephone number is (571)272-1696. The examiner can normally be reached Monday-Friday. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, William Partridge can be reached at 571-270-1402. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /THANHHA S PHAM/Primary Examiner, Art Unit 2812
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Prosecution Timeline

Aug 11, 2023
Application Filed
Jan 10, 2026
Non-Final Rejection — §112 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
85%
Grant Probability
90%
With Interview (+4.9%)
2y 5m
Median Time to Grant
Low
PTA Risk
Based on 872 resolved cases by this examiner. Grant probability derived from career allow rate.

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