Prosecution Insights
Last updated: April 19, 2026
Application No. 18/451,879

INTEGRATED CIRCUIT WITH OVERLAPPING STRESSORS

Non-Final OA §102
Filed
Aug 18, 2023
Examiner
DIAZ, JOSE R
Art Unit
2815
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Nxp Usa Inc.
OA Round
1 (Non-Final)
87%
Grant Probability
Favorable
1-2
OA Rounds
2y 6m
To Grant
94%
With Interview

Examiner Intelligence

Grants 87% — above average
87%
Career Allow Rate
799 granted / 922 resolved
+18.7% vs TC avg
Moderate +8% lift
Without
With
+7.5%
Interview Lift
resolved cases with interview
Typical timeline
2y 6m
Avg Prosecution
26 currently pending
Career history
948
Total Applications
across all art units

Statute-Specific Performance

§101
0.2%
-39.8% vs TC avg
§103
39.3%
-0.7% vs TC avg
§102
36.3%
-3.7% vs TC avg
§112
7.8%
-32.2% vs TC avg
Black line = Tech Center average estimate • Based on career data from 922 resolved cases

Office Action

§102
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1-3, 5-6, 8-10, 16-17, and 19-20 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Junker et al. (US 2011/0210401). Regarding claim 1, Junker discloses an integrated circuit comprising: a first transistor (207) including an active region (regions 213 and region 203 between adjacent regions 213) [Fig. 15]; a first stressor (215) of a first stressor type located directly over the active region; a second stressor (219 or 231) of a second stressor type opposite the first stressor type located directly over the active region (213), wherein the first stressor and the second stressor each includes a portion that directly overlaps each other [Fig. 15]. Regarding claim 2, Junker discloses wherein the first stressor (215) and the second stressor (219) each include a portion that directly overlaps each other directly over the active region (213) [Fig. 15]. Regarding claim 3, Junker discloses wherein the first stressor and the second stressor each include a portion that directly overlaps each other directly over a current terminal region (213) of the first transistor [Fig. 15]. Regarding claim 5, Junker discloses a third stressor (233,235 or 237) of the second stressor type (219) located directly over the active region (213), wherein the first stressor (215) and the third stressor (233,235 or 237) each include a portion that directly overlaps each other [Fig. 15]. Regarding claim 6, Junker discloses wherein the first stressor (215) includes a portion that does not directly overlap the third stressor (233,235 or 237) [Fig. 15]. Regarding claim 8, Junker discloses wherein the first stressor (215) includes a portion that does not directly overlap with a portion of the second stressor (231) [Fig. 15]. Regarding claim 9, Junker discloses wherein the first stressor (215) is located directly over the entire active area, wherein the second stressor (219) is not located directly over the entire active area (regions 213 and region 203 between adjacent regions 213 corresponding to transistor 207) [Fig. 15]. Regarding claim 10, Junker discloses wherein the first stressor (215) is located directly over the second stressor (219) [Fig. 15]. Regarding claim 16, Junker discloses wherein the first stressor and the second stressor each include silicon nitride [paragraph 0024, 0027, and 0057]. Regarding claim 17, Junker discloses wherein the first transistor (207) includes a gate structure (209) , wherein the first stressor (215) is located directly over the gate structure and the second stressor (219) is not located directly over the gate structure [Fig. 15]. Regarding claim 19, Junker discloses wherein the first stressor serves as an etch stop layer for forming a terminal contact of the first transistor [paragraphs 0002 and 0005]. Regarding claim 20, Junker discloses an integrated circuit comprising: a first field-effect transistor (FET) (207) including an active region [Fig. 15]; a first stressor (215) of a first stressor type located directly over the active region [Fig. 15]; a second stressor (219) of a second stressor type opposite the first stressor type located directly over the active region, wherein the first stressor and the second stressor each include a portion that directly overlaps each other over the active region (213) of the FET (207), wherein the first stressor (215) includes a portion that does not directly overlap with a portion of the second stressor (219) [Fig. 15]. Claims 1, 4 and 15 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Wang et al. (US 8748248). Regarding claim 1, Wank discloses an integrated circuit comprising: a first transistor (13/33) including an active region (regions 14/34 and region 10/30 between adjacent regions 14/34) [Figs. 1 and 4]; a first stressor (15/35) of a first stressor type located directly over the active region [Figs. 1 and 4]; a second stressor (16/36) of a second stressor type opposite the first stressor type located directly over the active region, wherein the first stressor and the second stressor each includes a portion that directly overlaps each other [Figs. 1 and 4]. Regarding claim 4, Wank discloses wherein the first stressor and the second stressor each include a portion that directly overlaps each other directly over a channel region of the first transistor (13/33) [Figs. 1 and 4]. Regarding claim 15, The court has held that a preamble is not limiting “where a patentee defines a structurally complete invention in the claim body and uses the preamble only to state a purpose or intended use for the invention” Catalina Marketing International Inc. v. Coolsavings.com Inc., 62 USPQ2d 1781 (CA FC 2002) citing Rowe v. Dror, 112 F.3d 473, 478, 42 USPQ2d 1550, 1553 (Fed. Cir. 1997). Allowable Subject Matter Claims 7, 11-14 and 18 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to JOSE R DIAZ whose telephone number is (571)272-1727. The examiner can normally be reached Monday-Friday. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Joshua Benitez can be reached at 571-270-1435. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /Jose R Diaz/Primary Examiner, Art Unit 2815
Read full office action

Prosecution Timeline

Aug 18, 2023
Application Filed
Jan 10, 2026
Non-Final Rejection — §102 (current)

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Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
87%
Grant Probability
94%
With Interview (+7.5%)
2y 6m
Median Time to Grant
Low
PTA Risk
Based on 922 resolved cases by this examiner. Grant probability derived from career allow rate.

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