DETAILED ACTION
This is in response to communication received on 1/8/26.
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
The text of those sections of AIA 35 U.S.C. code not present in this action can be found in previous office actions dated 10/23/25.
Claim Rejections - 35 USC § 112
The following is a quotation of the first paragraph of 35 U.S.C. 112(a):
(a) IN GENERAL.—The specification shall contain a written description of the invention, and of the manner and process of making and using it, in such full, clear, concise, and exact terms as to enable any person skilled in the art to which it pertains, or with which it is most nearly connected, to make and use the same, and shall set forth the best mode contemplated by the inventor or joint inventor of carrying out the invention.
The following is a quotation of the first paragraph of pre-AIA 35 U.S.C. 112:
The specification shall contain a written description of the invention, and of the manner and process of making and using it, in such full, clear, concise, and exact terms as to enable any person skilled in the art to which it pertains, or with which it is most nearly connected, to make and use the same, and shall set forth the best mode contemplated by the inventor of carrying out his invention.
Claims 1-20 are rejected under 35 U.S.C. 112(a) or 35 U.S.C. 112 (pre-AIA ), first paragraph, as failing to comply with the written description requirement. The claim(s) contains subject matter which was not described in the specification in such a way as to reasonably convey to one skilled in the relevant art that the inventor or a joint inventor, or for applications subject to pre-AIA 35 U.S.C. 112, the inventor(s), at the time the application was filed, had possession of the claimed invention.
The independent claims 1, 10, and 16, and dependent claim 4 and 12, have all been amended to include the subject matter of oxygen-and-not-hydrogen-containing precursor.
Examiner also notes that in Remarks dated 1/8/26, Applicant did not identify any support for this amendment. Examiner posits this is because there is no support for it, because she could not find it. The word 'not' doesn't even appear in the specification.
Examiner was able to identify paragraph 44 of the instant specification which is provided here:
The oxygen-containing precursor may be any oxygen-containing material useful in semiconductor processing, such as in atomic layer deposition processes. For example, the oxygen-containing precursor may be molecular oxygen (O2), ozone (O3), N2O, and/or other similar materials. In embodiments, in order to maintain oxygen content in the formed material, the oxygen-containing precursor may be diluted with another precursor such as an inert precursor. The oxygen-containing precursor may be less than or about 50% based on the oxygen-containing precursor and the inert precursor.
It is clear from this recitation that the phrase "oxygen-and-not-hydrogen-containing precursor" does not appear. However, Examiner notes that this limitation only limits the content of the precursor and not necessarily any other materials provided alongside the oxygen-containing precursor, (see "diluted with another precursor"). For example, a mixture of O2 and H2 would still fall within the scope of the claim because O2 is an "oxygen-and-not-hydrogen-containing precursor" that is diluted with a further precursor.
Applicant appears to have added new subject matter to the claims in an effort to amend around the art rather than to better explain their invention.
Appropriate correction is required.
Claim Rejections - 35 USC § 102
The claim rejection(s) under 35. U.S.C. 102(a)(1) as being anticipated by Go et al. USPGPub 2015/0235836 hereinafter GO on claim 1-4, 7, 10-12, 15-16, 19-20 are maintained. The rejection is amended below to meet the added claim limitations.
As for claim 1, GO teaches "In a method of forming an oxide layer of a semiconductor process" ( abstract, line 1), “the substrate 203 may include a semiconductor wafer such as silicon wafer or a germanium wafer” (paragraph 49, lines 3-4) and "The first filling layer 330 may be formed using an insulation material, e.g., silicon oxide or silicon nitride. The channel layer 325 and the first filling layer 330 may be formed by a CVD process, a PECVD process, an ALD process, etc." (paragraph 116, lines 7-11), i.e. A method of filling a feature on a semiconductor substrate, the method comprising: performing a process to fill the feature in the semiconductor substrate in a semiconductor processing chamber wherein the process comprises repeatedly performing first operations.
GO teaches “For example, the precursor flow may include the silicon precursor” (paragraph 65, lines 3-4), i.e. providing a silicon-containing precursor.
GO further teaches “For example, the first oxidizing agent flow may include an oxidizing agent having an oxidizing power stronger than oxygen (O2) and ozone (O3)” (paragraph 66, lines 5-6), i.e. providing an oxygen-and-not-hydrogen-containing precursor.
GO teaches “A precursor flow and a first oxidizing agent flow are provided on the preliminary precursor layer alternately and repeatedly to form precursor layers and first oxidizing agent layers alternately stacked on each other” (paragraph 20, lines 10-13), i.e. contacting the semiconductor substrate with the silicon-containing precursor and the oxygen-and-not-hydrogen-containing precursor to form a silicon-and-oxygen-containing material within the feature defined on the semiconductor substrate
GO teaches "In example embodiments, after the precursor layers 220 and the first oxidizing agent layers 230 are formed alternately and repeatedly by a desired (and/or alternatively predetermined) thickness and a desired ( and/or alternatively predetermined) stacked number, a purge gas such as nitrogen gas may be provided into the deposition chamber 100 to perform a second pumping process. The precursor materials that are physisorbed or are not adsorbed on the preliminary precursor layer 210 or the first oxidizing agent layer 230 may be removed” (paragraph 73), i.e. purging the semiconductor processing chamber of the silicon-containing precursor and the oxygen-and-not-hydrogen-containing precursor.
GO teaches “the second oxidizing agent flow may include a mixture gas of hydrogen and an oxidizing agent. The oxidizing agent may be oxygen (O2)” (paragraph 21, lines 4-6), i.e. providing an oxygen-and-hydrogen-containing precursor.
GO further teaches “A second oxidizing agent flow is provided on the precursor layers and the first oxidizing agent layers alternately stacked on each other to form a filling layer in the opening” (paragraph 20, lines 14-16), and “then a first filling layer 330 may be formed on the channel layer 325 to sufficiently fill a remaining portion of the channel hole 310” (paragraph 115, lines 3-5; see Fig. 12), i.e. providing an oxygen-and-hydrogen-containing precursor and contacting the semiconductor substrate with the oxygen-and-hydrogen-containing precursor to close a gap between portions of the silicon-and-oxygen containing material on opposing sidewalls of the feature defined in the semiconductor substrate.
As for claim 2, GO teaches "The first filling layer 330 may be formed using an insulation material, e.g., silicon oxide or silicon nitride. The channel layer 325 and the first filling layer 330 may be formed by a CVD process, a PECVD process, an ALD process, etc." (paragraph 116, lines 7-11) and see further Fig. 12 i.e. providing the oxygen-and-hydrogen-containing precursor causes the gap to close by causing a first side of the silicon-and-oxygen-containing material within the feature to bond with a second side of the silicon-and-oxygen-containing material within the feature.
As for claim 3, GO teaches “GO teaches "In a method of forming an oxide layer of a semiconductor process , a preliminary precursor flow is provided on a substrate in a deposition chamber to form a preliminary precursor layer, a precursor flow and a first oxidizing agent flow are provided on the preliminary precursor layer alternately and repeatedly to form precursor layers and first oxidizing agent layers alternately stacked on the preliminary precursor layer" (abstract, lines 1-7), and "In example embodiments, the introduction of the preliminary precursor flow may be terminated when the preliminary precursor layer 210 is formed. The precursor flow and the first oxidizing agent flow may be provided on the preliminary precursor layer 210 to form a precursor layer 220 and a first oxidizing agent layer 230 thereon" (paragraph 63), i.e. wherein forming the silicon-and-oxygen-containing material within the feature includes forming an atomic layer of silicon on an exposed surface of the feature; and wherein forming the silicon-and-oxygen-containing material within the feature includes providing oxygen to the atomic layer of silicon using the oxygen-and-not-hydrogen containing precursor.
As for claim 4, GO teaches "In a method of forming an oxide layer of a semiconductor process , a preliminary precursor flow is provided on a substrate in a deposition chamber to form a preliminary precursor layer, a precursor flow and a first oxidizing agent flow are provided on the preliminary precursor layer alternately and repeatedly to form precursor layers and first oxidizing agent layers alternately stacked on the preliminary precursor layer" (abstract, lines 1-7), and "a plurality of the first oxidizing agent layers 444 and the precursor layers 446 may be formed alternately and repeatedly" (paragraph 176, lines 5-7), i.e. wherein the process to fill the feature further comprises repeatedly performing second operations prior to repeatedly performing first operations, wherein both the first operations and the second operations are done at about a first pressure level.
GO teaches "In a method of forming an oxide layer of a semiconductor process , a preliminary precursor flow is provided on a substrate in a deposition chamber to form a preliminary precursor layer, a precursor flow and a first oxidizing agent flow are provided on the preliminary precursor layer alternately and repeatedly to form precursor layers and first oxidizing agent layers alternately stacked on the preliminary precursor layer" (abstract, lines 1-7), and "In example embodiments, the preliminary precursor flow may include a silicon precursor in which at least one ligand may be combined to a silicon atom as a central atom" (paragraph 53, lines 1-3), i.e. providing the silicon containing precursor; contacting the substrate with the silicon-containing precursor to form a silicon-containing material within the feature defined on the substrate.
GO teaches "In example embodiments, a purge gas may be provided into the deposition chamber 100 to perform a first pumping process. The precursor materials that are physisorbed or are not adsorbed on the object layer 205 may be removed by the first pumping process" (paragraph 59, lines 1-5), i.e. purging the semiconductor processing chamber.
GO teaches “A precursor flow and a first oxidizing agent flow are provided on the preliminary precursor layer alternately and repeatedly to form precursor layers and first oxidizing agent layers alternately stacked on each other” (paragraph 20, lines 10-13), and “For example, the first oxidizing agent flow may include an oxidizing agent having an oxidizing power stronger than oxygen (O2) and ozone (O3)” (paragraph 66, lines 5-6), i.e. providing an oxygen-and-not-hydrogen-containing precursor; and contacting the semiconductor substrate with the oxygen-and-not-hydrogen- containing precursor to form a silicon-and-oxygen-containing material within the feature defined on the semiconductor substrate.
As for claim 7, GO teaches "In example embodiments, the first oxidizing agent may include a mixture gas of hydrogen (H2) and oxygen (O2) as the oxidizing agent" (paragraph 66, lines 6-8), i.e. wherein the oxygen-and-hydrogen-containing precursor comprises O2 and H2.
As for claim 10, GO teaches "In a method of forming an oxide layer of a semiconductor process" (abstract, line 1) and "The first filling layer 330 may be formed using an insulation material, e.g., silicon oxide or silicon nitride. The channel layer 325 and the first filling layer 330 may be formed by a CVD process, a PECVD process, an ALD process, etc." (paragraph 116, lines 7-11), and "a plurality of the first oxidizing agent layers 444 and the precursor layers 446 may be formed alternately and repeatedly" (paragraph 176, lines 5-7), i.e. A method of filling a feature on a semiconductor substrate, the method comprising: performing a process to fill the feature on the semiconductor substrate in a semiconductor processing chamber, wherein the process comprises repeatedly performing first operations.
GO teaches “For example, the precursor flow may include the silicon precursor” (paragraph 65, lines 3-4), i.e. providing a silicon-containing precursor.
GO teaches “A precursor flow and a first oxidizing agent flow are provided on the preliminary precursor layer alternately and repeatedly to form precursor layers and first oxidizing agent layers alternately stacked on each other” (paragraph 20, lines 10-13), i.e. contacting the semiconductor substrate with the silicon-containing precursor and the oxygen-and-not-hydrogen-containing precursor to form a silicon-and-oxygen-containing material within the feature defined on the semiconductor substrate
GO teaches "In example embodiments, a purge gas may be provided into the deposition chamber 100 to perform a first pumping process. The precursor materials that are physisorbed or are not adsorbed on the object layer 205 may be removed by the first pumping process" (paragraph 59, lines 1-5), i.e. purging the semiconductor processing chamber.
GO further teaches “For example, the first oxidizing agent flow may include an oxidizing agent having an oxidizing power stronger than oxygen (O2) and ozone (O3)” (paragraph 66, lines 5-6), GO teaches “A precursor flow and a first oxidizing agent flow are provided on the preliminary precursor layer alternately and repeatedly to form precursor layers and first oxidizing agent layers alternately stacked on each other” (paragraph 20, lines 10-13), i.e. providing an oxygen-and-not-hydrogen-containing precursor; contacting the semiconductor substrate with the oxygen-and-not-hydrogen-containing precursor to form a silicon-and-oxygen-containing material within the feature defined on the semiconductor substrate.
GO teaches “the second oxidizing agent flow may include a mixture gas of hydrogen and an oxidizing agent. The oxidizing agent may be oxygen (O2)” (paragraph 21, lines 4-6), i.e. providing an oxygen-and-hydrogen-containing precursor.
GO further teaches “A second oxidizing agent flow is provided on the precursor layers and the first oxidizing agent layers alternately stacked on each other to form a filling layer in the opening” (paragraph 20, lines 14-16), and “then a first filling layer 330 may be formed on the channel layer 325 to sufficiently fill a remaining portion of the channel hole 310” (paragraph 115, lines 3-5; see Fig. 12), i.e. providing an oxygen-and-hydrogen-containing precursor; and contacting the silicon-and-oxygen-containing material with the oxygen-and-hydrogen-containing precursor.
As for claim 11, GO teaches "The first filling layer 330 may be formed using an insulation material, e.g., silicon oxide or silicon nitride. The channel layer 325 and the first filling layer 330 may be formed by a CVD process, a PECVD process, an ALD process, etc." (paragraph 116, lines 7-11) and see further Fig. 12 i.e. wherein providing the oxygen-and-hydrogen-containing precursor causes a gap in the feature to close by causing a first side of the silicon-and- oxygen-containing material within the feature to bond with a second side of the silicon-and-oxygen-containing material within the feature.
As for claims 12, GO teaches "In a method of forming an oxide layer of a semiconductor process, a preliminary precursor flow is provided on a substrate in a deposition chamber to form a preliminary precursor layer, a precursor flow and a first oxidizing agent flow are provided on the preliminary precursor layer alternately and repeatedly to form precursor layers and first oxidizing agent layers alternately stacked on the preliminary precursor layer" (abstract, lines 1-7), and "a plurality of the first oxidizing agent layers 444 and the precursor layers 446 may be formed alternately and repeatedly" (paragraph 176, lines 5-7), i.e. wherein the process to fill the feature further comprises repeatedly performing second operations prior to repeatedly performing first operations, the second operations comprising.
GO teaches "In a method of forming an oxide layer of a semiconductor process, a preliminary precursor flow is provided on a substrate in a deposition chamber to form a preliminary precursor layer, a precursor flow and a first oxidizing agent flow are provided on the preliminary precursor layer alternately and repeatedly to form precursor layers and first oxidizing agent layers alternately stacked on the preliminary precursor layer" (abstract, lines 1-7), and "In example embodiments, the preliminary precursor flow may include a silicon precursor in which at least one ligand may be combined to a silicon atom as a central atom" (paragraph 53, lines 1-3), i.e. providing the silicon containing precursor; contacting the semiconductor substrate with the silicon-containing precursor to form a silicon-containing material within the feature defined on the semiconductor substrate.
GO teaches "In example embodiments, a purge gas may be provided into the deposition chamber 100 to perform a first pumping process. The precursor materials that are physisorbed or are not adsorbed on the object layer 205 may be removed by the first pumping process" (paragraph 59, lines 1-5), i.e. purging the semiconductor processing chamber.
GO teaches “A precursor flow and a first oxidizing agent flow are provided on the preliminary precursor layer alternately and repeatedly to form precursor layers and first oxidizing agent layers alternately stacked on each other” (paragraph 20, lines 10-13), and “For example, the first oxidizing agent flow may include an oxidizing agent having an oxidizing power stronger than oxygen (O2) and ozone (O3)” (paragraph 66, lines 5-6), i.e. providing an oxygen-and-not-hydrogen-containing precursor; and contacting the semiconductor substrate with the oxygen-and-not-hydrogen- containing precursor to form a silicon-and-oxygen-containing material within the feature defined on the semiconductor substrate.
GO teaches “For example, the first oxidizing agent flow may include an oxidizing agent having an oxidizing power stronger than oxygen (O2) and ozone (O3)” (paragraph 66, lines 5-6), i.e. wherein the oxygen-and-hydrogen containing precursor comprises a gas.
As for claim 16, GO teaches "In a method of forming an oxide layer of a semiconductor process" ( abstract, line 1) and "The first filling layer 330 may be formed using an insulation material, e.g., silicon oxide or silicon nitride. The channel layer 325 and the first filling layer 330 may be formed by a CVD process, a PECVD process, an ALD process, etc." (paragraph 116, lines 7-11), i.e. method of filling a feature on a semiconductor substrate, the method comprising: performing a process to fill the feature on the semiconductor substrate in a semiconductor processing chamber, wherein the process comprises repeatedly performing first operations at a first pressure level.
GO teaches “For example, the precursor flow may include the silicon precursor” (paragraph 65, lines 3-4), i.e. providing a silicon-containing precursor.
GO further teaches “For example, the first oxidizing agent flow may include an oxidizing agent having an oxidizing power stronger than oxygen (O2) and ozone (O3)” (paragraph 66, lines 5-6), i.e. providing an oxygen-and-not-hydrogen-containing precursor.
GO teaches “A precursor flow and a first oxidizing agent flow are provided on the preliminary precursor layer alternately and repeatedly to form precursor layers and first oxidizing agent layers alternately stacked on each other” (paragraph 20, lines 10-13), and “In the method, a stacked structure that includes a plurality of channels extending through a plurality of insulating interlayer patterns and gate electrode alternately stacked on each other on a substrate is formed, and the stacked structure includes at least one opening that exposes a portion of the substrate” (paragraph 20, lines 3-8) i.e. contacting the semiconductor substrate with the silicon-containing precursor to form a silicon-containing material within the feature defined on the semiconductor substrate.
GO teaches "In example embodiments, after the precursor layers 220 and the first oxidizing agent layers 230 are formed alternately and repeatedly by a desired (and/or alternatively predetermined) thickness and a desired ( and/or alternatively predetermined) stacked number, a purge gas such as nitrogen gas may be provided into the deposition chamber 100 to perform a second pumping process. The precursor materials that are physisorbed or are not adsorbed on the preliminary precursor layer 210 or the first oxidizing agent layer 230 may be removed” (paragraph 73), i.e. purging the semiconductor processing chamber.
GO teaches “the second oxidizing agent flow may include a mixture gas of hydrogen and an oxidizing agent. The oxidizing agent may be oxygen (O2)” (paragraph 21, lines 4-6), i.e. providing an oxygen-and-hydrogen-containing precursor.
GO further teaches “A second oxidizing agent flow is provided on the precursor layers and the first oxidizing agent layers alternately stacked on each other to form a filling layer in the opening” (paragraph 20, lines 14-16), and “then a first filling layer 330 may be formed on the channel layer 325 to sufficiently fill a remaining portion of the channel hole 310” (paragraph 115, lines 3-5; see Fig. 12), i.e. contacting the semiconductor substrate with the oxygen-and-not-hydrogen-containing precursor to form a silicon-and-oxygen-containing material within the feature defined on the semiconductor substrate.
GO further teaches “A second oxidizing agent flow is provided on the precursor layers and the first oxidizing agent layers alternately stacked on each other to form a filling layer in the opening” (paragraph 20, lines 14-16), i.e. wherein the process to fill the feature further comprises repeatedly performing second operations at a second pressure level after repeatedly performing first operations, the second operations comprising: providing an oxygen-and-hydrogen-containing precursor; and contacting the silicon-and-oxygen-containing material with the oxygen-and- hydrogen-containing precursor.
As for claim 19, GO teaches a method of "forming an oxide layer of a semiconductor device includes forming a preliminary precursor layer on an object by performing a deposition process using a preliminary precursor material in a chamber containing the object, forming a plurality of precursor layers and first oxidizing agent layers alternately on each other by alternately performing a deposition process using a precursor material and a performing a deposition process using a first mixture including an oxidizing gas in the chamber containing the object after the forming the preliminary precursor layer, and forming a second oxidizing agent layer on the plurality of precursor layer and first oxidizing agent layers by performing a deposition process using a second mixture including an oxidizing gas in the process chamber containing the object" (paragraph 23), i.e. wherein the second operations, prior to providing the oxygen-and-hydrogen- containing precursor, further comprise: providing the silicon-containing precursor; contacting the silicon-and-oxygen-containing material with the silicon containing precursor to form a silicon-containing material within the feature; and purging the semiconductor processing chamber.
As for claim 20, GO teaches "The first filling layer 330 may be formed using an insulation material, e.g., silicon oxide or silicon nitride. The channel layer 325 and the first filling layer 330 may be formed by a CVD process, a PECVD process, an ALD process, etc." (paragraph 116, lines 7-11) and see further Fig. 12 i.e. wherein contacting the silicon-and-oxygen-containing material with the oxygen-and-hydrogen-containing precursor causes a gap in the feature to close by causing a first side of the silicon-and-oxygen-containing material within the feature to bond with a second side of the silicon-and-oxygen-containing material within the feature.
Claim Rejections - 35 USC § 103
The claim rejection(s) under AIA 35 U.S.C. 103 as being obvious over Go et al. US PGPub 2015/0235836 hereinafter GO on claim 13 is maintained. The rejection is repeated below for convenience.
As for claim 13, GO teaches "a temperature of the chamber containing the object is maintained in range of about 400° C. to about 800° C. during the deposition process using the preliminary precursor material and the deposition process using the precursor material" (claim 17, lines 7-11), i.e. a range that overlaps with wherein the process is performed at a temperature greater than or about 400 °C. In the case where the claimed ranges "overlap or lie inside ranges disclosed by the prior art" a prima facie case of obviousness exists. In re Wertheim, 541 F.2d 257, 191 USPQ 90 (CCPA 1976); In re Woodruff, 919 F.2d 1575, 16 USPQ2d 1934 (Fed. Cir. 1990); In re Geisler, 116 F.3d 1465, 1469-71, 43 USPQ2d, 1362, 1365-66 (Fed. Cir. 1997). See MPEP 2144.05.
The claim rejection(s) under AIA 35 U.S.C. 103 as being obvious over Go et al. USPGPub 2015/0235836 hereinafter GO as applied to claim 1, 10 and 16 above, and further in view of Tang et al. US PGPub 2019/0348273 hereinafter TANG on claim 5-6, 8-9 and 17-18 are maintained. The rejection is repeated below for convenience.
As for claim 5, GO is silent on a particular pressure.
TANG teaches "The present disclosure relates generally to methods for depositing an oxide film by a cyclical deposition process and particular methods for depositing an oxide film by a cyclical deposition process including a first sub-cycle and a second sub-cycle" (paragraph 2, lines 1-5) and "In some embodiments of the disclosure, the oxide films formed as disclosed herein may be utilized as gap-fill materials" (paragraph 90, lines 1-3).
TANG teaches "In addition to achieving a desired deposition temperature, i.e., a desired substrate temperature, the deposition process may also regulate the pressure within the reaction chamber during deposition to obtain desirable characteristics of the deposited film. For example, in some embodiments of the disclosure, the deposition process may be performed within a reaction chamber regulated to a reaction chamber pressure of greater than 9 Torr, or greater than 50 Torr, or greater than 75 Torr, or even greater than 100 Torr" (paragraph 47, lines 1-9), i.e. a range that overlaps with wherein the first pressure level is greater than or about 2 Torr. In the case where the claimed ranges "overlap or lie inside ranges disclosed by the prior art" a prima facie case of obviousness exists. In re Wertheim, 541 F.2d 257, 191 USPQ 90 (CCPA 1976); In re Woodruff, 919 F.2d 1575, 16 USPQ2d 1934 (Fed. Cir. 1990); In re Geisler, 116 F.3d 1465, 1469-71, 43 USPQ2d, 1362, 1365-66 (Fed. Cir. 1997). See MPEP 2144.05.
It would have been obvious to one of ordinary skill in the before the effective filing date to operate the process of GO at a range that overlaps with wherein the first pressure level is greater than or about 2 Torr because TANG teaches that such a range is useful for producing the desired characteristics of oxide.
As for claim 6, GO teaches "As the degree of integration of the vertical memory device becomes larger, a width of the openings 350 may be reduced and an aspect ratio of the opening 350 may be increased" (paragraph 152), but is silent on a specific aspect ratio.
TANG teaches "The present disclosure relates generally to methods for depositing an oxide film by a cyclical deposition process and particular methods for depositing an oxide film by a cyclical deposition process including a first sub-cycle and a second sub-cycle" (paragraph 2, lines 1-5) and "In some embodiments of the disclosure, the oxide films formed as disclosed herein may be utilized as gap-fill materials" (paragraph 90, lines 1-3).
TANG teaches "In some embodiments of the disclosure, the oxide film may be deposited on a substrate comprising high aspect ratio features, e.g., a three dimensional, non-planar substrate. In some embodiments, the oxide film may be deposited over a substrate which comprises one or more trench structures and/or fin structures with an aspect ratio (height/width) of greater than 10: 1, or greater than 20: 1, or greater than 30: 1, or even greater than 50: 1. In such embodiments, wherein the oxide film is deposited over a substrate comprising high aspect ratio features, the step coverage may be greater than approximately 90%, or greater than approximately 95%, or greater than approximately 99%, or even substantially equal to 100%" (paragraph 86), i.e. a range that overlaps with wherein the feature is characterized by an aspect ratio of greater than or about 10: 1. In the case where the claimed ranges "overlap or lie inside ranges disclosed by the prior art" a prima facie case of obviousness exists. In re Wertheim, 541 F.2d 257, 191USPQ 90 (CCPA 1976); In re Woodruff, 919 F.2d 1575, 16 USPQ2d 1934 (Fed. Cir. 1990); In re Geisler, 116 F.3d 1465, 1469-71, 43 USPQ2d, 1362, 1365-66 (Fed. Cir. 1997). See MPEP 2144.05.
It would have been obvious to one of ordinary skill in the art before the effective failing date to include features having an aspect ratio that overlaps with the range wherein the feature is characterized by an aspect ratio of greater than or about 10: 1 in the process of GO because TANG teaches that such aspect ratios were the norm for semiconductor trench and fin structures.
As for claim 8, GO is silent on wherein the oxygen-and-hydrogen-containing precursor comprises H202.
TANG teaches "The present disclosure relates generally to methods for depositing an oxide film by a cyclical deposition process and particular methods for depositing an oxide film by a cyclical deposition process including a first sub-cycle and a second sub-cycle" (paragraph 2, lines 1-5) and "In some embodiments of the disclosure, the oxide films formed as disclosed herein may be utilized as gap-fill materials" (paragraph 90, lines 1-3).
TANG teaches "In some embodiments the oxygen precursor comprises at least one of water (H2O), hydrogen peroxide (H2O2) , ozone (O3)," (paragraph 54, lines 4- 6), i.e. wherein H2O2 is a known oxidizer for applying oxide materials in ALD processes.
It would have been obvious to one of ordinary skill in the art before the effective filing date to include wherein the oxygen-and-hydrogen-containing precursor comprises H202 in the process of GO because TANG teaches that the material was a known oxidizing agent when forming layer by layer oxide materials.
As for claim 9, GO is silent on wherein the oxygen-and-hydrogen-containing precursor comprises H20.
TANG teaches "The present disclosure relates generally to methods for depositing an oxide film by a cyclical deposition process and particular methods for depositing an oxide film by a cyclical deposition process including a first sub-cycle and a second sub-cycle" (paragraph 2, lines 1-5) and "In some embodiments of the disclosure, the oxide films formed as disclosed herein may be utilized as gap-fill materials" (paragraph 90, lines 1-3).
TANG teaches "In some embodiments the oxygen precursor comprises at least one of water (H2O), hydrogen peroxide (H2O2) , ozone (O3)," (paragraph 54, lines 4- 6), i.e. wherein H2O2 is a known oxidizer for applying oxide materials in ALD processes.
It would have been obvious to one of ordinary skill in the art before the effective filing date to include wherein the oxygen-and-hydrogen-containing precursor comprises H2O in the process of GO because TANG teaches that the material was a known oxidizing agent when forming layer by layer oxide materials.
As for claim 17, GO is silent on a particular pressure.
TANG teaches "The present disclosure relates generally to methods for depositing an oxide film by a cyclical deposition process and particular methods for depositing an oxide film by a cyclical deposition process including a first sub-cycle and a second sub-cycle" (paragraph 2, lines 1-5) and "In some embodiments of the disclosure, the oxide films formed as disclosed herein may be utilized as gap-fill materials" (paragraph 90, lines 1-3).
TANG teaches "In addition to achieving a desired deposition temperature, i.e., a desired substrate temperature, the deposition process may also regulate the pressure within the reaction chamber during deposition to obtain desirable characteristics of the deposited film. For example, in some embodiments of the disclosure, the deposition process may be performed within a reaction chamber regulated to a reaction chamber pressure of greater than 9 Torr, or greater than 50 Torr, or greater than 75 Torr, or even greater than 100 Torr" (paragraph 47, lines 1-9), i.e. a range that overlaps with wherein the first pressure level is greater than or about 2 Torr. In the case where the claimed ranges "overlap or lie inside ranges disclosed by the prior art" a prima facie case of obviousness exists. In re Wertheim, 541 F.2d 257, 191 USPQ 90 (CCPA 1976); In re Woodruff, 919 F.2d 1575, 16 USPQ2d 1934 (Fed. Cir. 1990); In re Geisler, 116 F.3d 1465, 1469-71, 43 USPQ2d, 1362, 1365-66 (Fed. Cir. 1997). See MPEP 2144.05.
It would have been obvious to one of ordinary skill in the before the effective filing date to operate the process of GO at a range that overlaps with wherein the first pressure level is greater than or about 2 Torr because TANG teaches that such a range is useful for producing the desired characteristics of oxide.
As for claim 18, GO is silent on a particular pressure.
TANG teaches "The present disclosure relates generally to methods for depositing an oxide film by a cyclical deposition process and particular methods for depositing an oxide film by a cyclical deposition process including a first sub-cycle and a second sub-cycle" (paragraph 2, lines 1-5) and "In some embodiments of the disclosure, the oxide films formed as disclosed herein may be utilized as gap-fill materials" (paragraph 90, lines 1-3).
TANG teaches "In addition to achieving a desired deposition temperature, i.e., a desired substrate temperature, the deposition process may also regulate the pressure within the reaction chamber during deposition to obtain desirable characteristics of the deposited film. For example, in some embodiments of the disclosure, the deposition process may be performed within a reaction chamber regulated to a reaction chamber pressure of greater than 9 Torr, or greater than 50 Torr, or greater than 75 Torr, or even greater than 100 Torr" (paragraph 47, lines 1-9), i.e. a range that overlaps with wherein the second pressure level is about atmospheric pressure. In the case where the claimed ranges "overlap or lie inside ranges disclosed by the prior art" a prima facie case of obviousness exists. In re Wertheim, 541 F.2d 257, 191 USPQ 90 (CCPA 1976); In re Woodruff, 919 F.2d 1575, 16 USPQ2d 1934 (Fed. Cir. 1990); In re Geisler, 116 F.3d 1465, 1469-71, 43 USPQ2d, 1362, 1365-66 (Fed. Cir. 1997). See MPEP 2144.05.
It would have been obvious to one of ordinary skill in the before the effective filing date to operate the process of GO at a range that overlaps with wherein the second pressure level is about atmospheric pressure because TANG teaches that such a range is useful for producing the desired characteristics of oxide.
The claim rejection(s) under AIA 35 U.S.C. 103 as being obvious over Go et al. USPGPub 201510235836 hereinafter GO as applied to claim 10 above, and further in view of Yamazaki et al. US PG Pub 202110320193 hereinafter YAMAZAKI on claim 14 is maintained. The rejection is repeated below for convenience.
As for claim 14, GO is silent on plasma.
YAMAZAKI teaches "One embodiment of the present invention relates to a semiconductor device and a method for manufacturing the semiconductor device" (paragraph 1, lines 1-3) and "Note that an ALO method is a method in which deposition is performed through reaction of precursors and reactants using energy of heat or the like. Among ALD methods, an ALD method in which treatment is performed by introducing plasma-excited reactants into a chamber is sometimes referred to as a PEALD (Plasma Enhanced ALD) method" (paragraph 95, lines 1-7), and "An ALD method includes a PEALD (plasma-enhanced ALD) method, which is a deposition method using plasma. The use of plasma is sometimes preferable because deposition at lower temperature is possible" (paragraph 216, lines 7-11 ), i.e. wherein the precursor comprises a plasma.
It would have been obvious to one of ordinary skill in the art before the effective filing date to include wherein the oxygen-and-hydrogen-containing precursor comprises a plasma in the process of GO because YAMAZAKI teaches that using a plasma can reduce the deposition at the lower temperature.
Response to Arguments
Applicant's arguments filed 1/8/26 have been fully considered but they are not persuasive.
Applicant’s arguments are summarized and addressed below:
(a) Applicant argues the GO requires an oxygen and hydrogen mix for the oxidizing steps, and Go never uses silicon and oxygen initially without hydrogen present with the oxygen.
Examiner agrees with this interpretation but it is ultimately irrelevant because a) the amendments to the claim on which the Applicant is basing their arguments are not supported by the claims and cannot be considered a patentable distinction because of that, and b) the amendment isn't exclusive of GO. GO teaches an embodiment wherein "For example, the first oxidizing agent flow may include an oxidizing agent having an oxidizing power stronger than oxygen (02) and ozone (03)" (paragraph 66, lines 4-6), which is a precursor that only contains oxygen and not hydrogen.
As such Applicant's arguments cannot be considered persuasive as they rely on new matter and the prior art on record teaches the new matter.
Conclusion
Applicant's amendment necessitated the new ground(s) of rejection presented in this Office action. Accordingly, THIS ACTION IS MADE FINAL. See MPEP § 706.07(a). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a).
A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action.
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/KRISTEN A DAGENAIS/Examiner, Art Unit 1717
/Dah-Wei D. Yuan/Supervisory Patent Examiner, Art Unit 1717