Prosecution Insights
Last updated: April 19, 2026
Application No. 18/458,804

SEMICONDUCTOR DEVICE

Non-Final OA §102§103
Filed
Aug 30, 2023
Examiner
SEVEN, EVREN
Art Unit
2812
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Rohm Co. Ltd.
OA Round
1 (Non-Final)
74%
Grant Probability
Favorable
1-2
OA Rounds
2y 4m
To Grant
82%
With Interview

Examiner Intelligence

Grants 74% — above average
74%
Career Allow Rate
532 granted / 723 resolved
+5.6% vs TC avg
Moderate +8% lift
Without
With
+8.3%
Interview Lift
resolved cases with interview
Typical timeline
2y 4m
Avg Prosecution
29 currently pending
Career history
752
Total Applications
across all art units

Statute-Specific Performance

§101
2.3%
-37.7% vs TC avg
§103
51.9%
+11.9% vs TC avg
§102
23.1%
-16.9% vs TC avg
§112
20.3%
-19.7% vs TC avg
Black line = Tech Center average estimate • Based on career data from 723 resolved cases

Office Action

§102 §103
Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claims 1, 2, 7 and 12 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by U.S. Pat. No. 9596767 to Dote. Regarding Claim 1, Dote teaches a semiconductor device comprising: a semiconductor substrate 10; a first electroconductive member 20 that is formed on the semiconductor substrate and that has a first linear portion extending along a principal surface of the semiconductor substrate (see Figs. 1A-1C); and an organic insulation layer 30 that is formed on the semiconductor substrate and that covers the first electroconductive member, wherein the first linear portion includes a first side edge portion formed by a curve that is alternately bent to one side and to an opposite side in a direction intersecting a longitudinal direction of the first linear portion in a plan view (see Fig. 18B). Regarding Claim 2, Dote teaches the semiconductor device according to Claim 1, wherein the first linear portion includes a base portion 20 to which a joining member is connectable (top surface of 20 is for receiving a joining member) and a first side portion including a convex portion that protrudes from the base portion in the direction intersecting a longitudinal direction of the first linear portion and a concave portion that is hollowed with respect to the convex portion, and the first side edge portion is formed by a curve that continuously connects the convex portion and the concave portion along the longitudinal direction of the first linear portion in a plan view (see again Fig. 18B). Regarding Claim 7, Dote teaches the semiconductor device according to Claim 2, wherein the organic insulation layer has a pad opening that exposes the base portion of the first linear portion as a pad (see Fig. 10B for example). Regarding Claim 12, Dote teaches the semiconductor device according to Claim 1, comprising an integrated circuit element that is formed at the semiconductor substrate and that is electrically connected to the first electroconductive member (2:62-64). Claim Rejections - 35 USC § 103 The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action: A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made. Claims 4, 5, 8 and 9 are rejected under 35 U.S.C. 103 as being unpatentable over Dote in view of U.S. Pat. No. 7067412 to Fukumoto. Regarding Claims 4 and 5, Dote teaches the semiconductor device according to Claim 1, but does not explicitly teach that the first electroconductive member includes a forward end portion including a part of the first linear portion and a second linear portion connected to the first linear portion through a corner portion, and the first side edge portion is selectively formed at the first linear portion that is one of the first linear portion and the second linear portion, wherein the forward end portion of the first electroconductive member has a first side surface formed by a first circular arc having a first curvature radius in a plan view, and the first side edge portion of the first electroconductive member has a second side surface formed by a second circular arc having a second curvature radius smaller than the first curvature radius in a plan view. However, in analogous art, Fukumoto teaches in Fig. 6 at least electroconductive members 601 having first and second linear portions (vertical and horizontal) joined by curves having first and second radii. It would have been obvious to the person of ordinary skill in the art before the time of filing to include the teaching of Fukumoto to optimally route conductive traces around the surface of an IC. Regarding Claim 8, Dote teaches the semiconductor device according to Claim 1, but does not explicitly teach a second electroconductive member connected to the base portion of the first linear portion in the organic insulation layer. However, mere duplication of parts has no patentable significance unless a new and unexpected result is produced (MPEP 2144.04(VI)(B)). In this case, nothing on the record indicates a new or unexpected result aside from greater integration, which is expected. Regarding Claim 9, Dote teaches the semiconductor device according to Claim 8, wherein the second electroconductive member has a third linear portion that extends along the principal surface of the semiconductor substrate, and the third linear portion includes a second side edge portion formed by a curve that is alternately bent to one side and to an opposite side in a direction intersecting a longitudinal direction of the third linear portion in a plan view (duplicating Dote’s electroconductive member would similarly duplicate the curved pattern). Allowable Subject Matter Claims 3, 6, 10 and 11 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. The following is a statement of reasons for the indication of allowable subject matter: The cited prior art does not show the further limitations of these dependent claims. Conclusion Any inquiry concerning this communication or earlier communications from the examiner should be directed to EVREN SEVEN whose telephone number is (571)270-5666. The examiner can normally be reached Mon-Fri 8:00- 5:00 Pacific. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Christine Kim can be reached at (571) 272-8458. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /EVREN SEVEN/Primary Examiner, Art Unit 2812
Read full office action

Prosecution Timeline

Aug 30, 2023
Application Filed
Dec 11, 2025
Non-Final Rejection — §102, §103 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12604709
PROBE CARD CONFIGURED TO CONNECT TO A PROBE PAD LOCATED IN SAW STREET OF A SEMICONDUCTOR WAFER
2y 5m to grant Granted Apr 14, 2026
Patent 12598748
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
2y 5m to grant Granted Apr 07, 2026
Patent 12598701
SEMICONDUCTOR DEVICE WITH SELECTION STRUCTURE AND METHOD FOR FABRICATING THE SAME
2y 5m to grant Granted Apr 07, 2026
Patent 12586736
MEMS SWITCH
2y 5m to grant Granted Mar 24, 2026
Patent 12588324
PACKAGE STRUCTURE AND FORMING METHOD THEREOF
2y 5m to grant Granted Mar 24, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
74%
Grant Probability
82%
With Interview (+8.3%)
2y 4m
Median Time to Grant
Low
PTA Risk
Based on 723 resolved cases by this examiner. Grant probability derived from career allow rate.

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