DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Election/Restrictions
Applicant’s election without traverse of Species 1 in the reply filed on 12/15/25 is acknowledged.
Claim Rejections - 35 USC § 102
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.
Claim(s) 1-4 and 20 is/are rejected under 35 U.S.C. 102a1 as being anticipated by Matsumoto (WO 2019/181590- please note the paragraph citations made below are in reference to the paragraph numbers inserted into the machine translation attached after the conclusion of this office action).
[Claim 1] A high frequency module comprising:
a mounting board (Fig.1A (30) and [0002]) that has a first main surface (Fig.1A (30b) and [0002]) facing a second main surface (Fig.1A (30a) and [0002]);
a power amplifier (Fig.1A (11) and [0002]) that is disposed on the second main surface (Fig.1A (30a) and [0002]) of the mounting board (Fig.1A (30) and [0002]); and
a connection member (Fig.1A (411/412) and [0057]) that is connectable to an external board (Fig.1A (90) and [0020]),
wherein the power amplifier (Fig.1A (11) and [0002]) includes a base material (Fig.1A (11) and [0002- note the Examiner’s interpretation that 11 is the base material of the amplifier is consistent with Applicant’s specification]) that has a third main surface (bottom side) facing a fourth main surface (top side), the third main surface (bottom side) being disposed between the second main surface (left side) and the fourth main surface (top side),
a transistor (Fig.2B (14/140-note transistor is within base material 11 in Fig.1A) and [0051-0053]) and that is disposed on the third main surface (bottom side) of the base material (Fig.1A (11- emitter terminals 111/112 on bottom) and [0002]), and
a through via (Fig.1A/1C (51/52) and [0002/0057]) that is provided in the base material (Fig.1A (11) and [0002]) along a facing direction in which the third main surface (bottom surface) faces the fourth main surface (top surface), and the through via (Fig.1A/1C (51/52) and [0002/0057]) is connected to the connection member (Fig.1A (411/412) and [0057]).
[Claim 2] The high frequency module according to Claim 1, wherein the power amplifier (Fig.1A (11) and [0002]) is disposed on the second main surface (Fig.1A (30a) and [0002]) of the mounting board (Fig.1A (30) and [0002]) with a first metal member (Fig.1A (111) and [0051-0052]) interposed therebetween, and the first metal member (Fig.1A (111) and [0051-0052]) is connected to the third main surface (bottom side) of the power amplifier (Fig.1A (11) and [0002]).
[Claim 3] The high frequency module according to Claim 2, further comprising: a second metal member (Fig.1A (112) and [0051-0052]) that is disposed on the second main surface (Fig.1A (30a) and [0002]) of the mounting board (Fig.1A (30) and [0002]) in a region facing the transistor (Fig.2B (14/140-note transistor is within base material 11 in Fig.1A) and [0051-0053]) , wherein the second metal member (Fig.1A (112) and [0051-0052/0089]) is connected to the first metal member (Fig.1A (111) and [0051-0052/0089]).
[Claim 4] The high frequency module according to Claim 2, wherein the first metal member (Fig.1A (111) and [0051-0052]) is one of a plurality of first metal members (Fig.1A (111, 121, 221) and [0130]) and a first metal member (Fig.1A (111) and [0051-0052]) closest to the transistor (Fig.2B (14/140-note transistor is within base material 11 in Fig.1A) and [0051-0053]) among the plurality of first metal members (Fig.1A (111, 121, 221) and [0130]) is connected to the through via ((Fig.1A (51) and [0089]).
[Claim 20] A communication device comprising: the high frequency module according to Claim 1 (see citations made above); and a signal processing circuit (Fig.2A (RFIC 6) and [0023/0044]) and that processes a high frequency signal passing through the high frequency module (Fig.2A (1A) and [0021]).
Conclusion
The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Ono et al (US 20230411376; WO 2022186131); Nakazawa (US 12107616); Muto et al (WO 2020071021) teach similar structures.
Any inquiry concerning this communication or earlier communications from the examiner should be directed to LAURA M MENZ whose telephone number is (571)272-1697. The examiner can normally be reached Monday-Friday 7:00-3:30.
Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice.
If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Steven Gauthier can be reached at 571-270-0373. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000.
/LAURA M MENZ/Primary Examiner, Art Unit 2813
2/27/26
Machine translation of WO 2019181590 (paragraph numbers are added for Applicant’s convenience)
HIGH-FREQUENCY MODULE AND COMMUNICATION DEVICE
Patent Number
2019181590
Document ID
WO 2019181590 A1
Date Published
2019-09-26
Inventor Information
Name
City
State
ZIP Code
Country
MATSUMOTO, SHO
N/A
N/A
?6178555
JP
Application NO
JP 2019009579 W
Date Filed
2019-03-11
CPC Current
Type
CPCI
CPCI
CPCI
CPCI
CPCI
CPCI
CPCI
CPCI
CPCI
CPCI
CPCI
CPCI
CPCI
CPCI
CPCI
CPCI
CPCA
CPCA
CPCA
CPCA
CPCA
CPCA
CPCA
CPCA
CPCA
CPCA
CPCA
CPCA
CPCA
CPCA
CPCA
CPCA
CPCA
CPCA
CPC
H 10 W 90/00
H 10 W 20/427
H 10 W 70/635
H 10 W 20/20
H 10 W 74/121
H 10 W 90/00
H 10 W 44/20
H 10 W 42/20
H 10 W 40/10
H 10 W 90/00
H 10 W 44/20
H 10 W 74/114
H 04 B 1/40
H 03 F 3/245
H 03 F 1/56
H 04 B 1/38
H 10 W 90/724
H 10 W 90/291
H 10 W 90/288
H 10 W 90/271
H 10 W 72/823
H 10 W 42/271
H 10 W 74/00
H 10 W 90/291
H 10 W 90/288
H 10 W 90/271
H 10 W 72/823
H 10 W 42/271
H 10 W 90/724
H 04 B 1/006
H 03 F 2200/294
H 03 F 2200/222
H 03 F 2200/387
H 03 F 2200/451
Date
2026-01-01
2026-01-01
2026-01-01
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2026-01-01
2026-01-01
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2026-01-01
2013-01-01
2013-01-01
2013-01-01
2013-01-01
2026-01-01
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2026-01-01
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2026-01-01
2026-01-01
2026-01-01
2013-01-01
2013-01-01
2013-01-01
2013-01-01
2013-01-01
Abstract
This high-frequency module (1) is provided with: a mounting board (30) having main surfaces (30a and 30b) which face each other; a PA (11) which is mounted on the main surface (30a) and which is a high-frequency component and has an emitter terminal; a through-electrode (51) which is connected to the emitter terminal of the PA (11) and passes through the main surface (30a) and the main surface (30b) of the mounting board (30); and ground terminals (411 and 412) connected to the through-electrode (51).
Description
INVENTION-TITLE
TECHNICAL-FIELD
The present invention relates to a high frequency module and a communication device.
BACKGROUND-ART
In mobile communication devices such as mobile phones, the number of circuit elements constituting a high-frequency front-end circuit increases particularly with the development of multiband.
Patent Document 1 discloses an electronic component (circuit module) in which circuit elements constituting a high-frequency front-end circuit are mounted on both surfaces of a mounting substrate. A passive chip component is mounted on the first mounting surface on the side where the external terminal electrodes are arranged, of the two mounting surfaces facing each other of the core substrate of the double-side mounting type, and the second mounting surface opposite to the first mounting surface. Active chip components are mounted on the mounting surface. According to the above configuration, it is possible to provide a circuit module having a higher density and a smaller size as compared with a circuit module in which circuit elements are formed on a single-sided mounting type substrate.
CITATION-LIST
PATENT-LITERATURE
[1] International Publication No. 2005/078796
DESCRIPTION-OF-EMBODIMENTS
Hereinafter, embodiments of the present invention will be described in detail with reference to the embodiments and the drawings. It should be noted that each of the embodiments described below shows a comprehensive or specific example. Numerical values, shapes, materials, constituent elements, arrangement of constituent elements, connection forms, and the like shown in the following embodiments are merely examples, and are not intended to limit the present invention. Among the constituent elements in the following embodiments, constituent elements not described in the independent claims are described as optional constituent elements. In addition, the size or size ratio of the components shown in the drawings is not necessarily strict.
Further, in this specification, in A, B, and C mounted on the substrate, “when the substrate (or the main surface of the substrate) is viewed in plan, C is arranged between A and B. "Is" a line connecting an arbitrary point in the region A projected when the substrate is viewed in plan and an arbitrary point in the region B projected when the substrate is viewed in plan , It is defined to indicate that at least a part of a region C projected when the substrate is viewed in plan view is overlapped.
(Embodiment)
[1. Configuration of high-frequency module 1 according to the embodiment]
FIG. 1A is a first cross-sectional configuration diagram of a high-frequency module 1 according to an embodiment. FIG. 1B is a second cross-sectional configuration diagram of the high-frequency module 1 according to the embodiment. FIG. 1C is a third cross-sectional configuration diagram of the high-frequency module 1 according to the embodiment. More specifically, FIG. 1A is a cross-sectional view of the IA-IA cut surface of FIGS. 1B and 1C as viewed in the positive Y-axis direction. 1B is a cross-sectional view of the IB-IB cut surface of FIG. 1A as viewed in the negative Z-axis direction. 1C is a cross-sectional view of the IC-IC cut surface of FIG. 1A viewed in the negative Z-axis direction.
As shown in FIG. 1A, the high-frequency module 1 includes a mounting board 30, a PA (Power Amplifier) 11, an LNA (Low Noise Amplifier) 21, a transmission filter 12, a reception filter 22, a resin member 40A, and 40B, penetrating electrodes 51, 52, 53 and 54, and ground terminals 411, 412 and 422 are provided.
The high frequency module 1 can be electrically connected to the external substrate 90. The external substrate 90 has ground electrodes 911, 912, and 922 on the surface in the positive direction of the Z axis, and corresponds to a mother substrate such as a mobile phone and a communication device.
Note that the high-frequency module 1 can be electrically connected to the external substrate 90 not only when the high-frequency module 1 is directly mounted on the external substrate 90 but also when the high-frequency module 1 is indirectly mounted on the external substrate 90. It also includes the case where it is implemented. The case where the high frequency module 1 is indirectly mounted on the external substrate 90 is a case where the high frequency module 1 is mounted on another high frequency module mounted on the external substrate 90, or the like.
Hereinafter, a circuit configuration example of the high-frequency module 1A, which is a specific configuration example of the high-frequency module 1, will be described.
FIG. 2A is a block configuration diagram of the high-frequency module 1A and the communication device 8 according to the embodiment. The figure shows a high frequency module 1A according to the present embodiment, a common input / output terminal 100, a transmission input terminal 110, a reception output terminal 120, an antenna element 5, an RF signal processing circuit (RFIC) 6, and a base. A band signal processing circuit (BBIC) 7 is shown. The high-frequency module 1A shown in the figure is a specific circuit configuration example of the high-frequency module 1 shown in FIGS. 1A to 1C. The high frequency module 1A, the antenna element 5, the RFIC 6, and the BBIC 7 constitute a communication device 8. The communication device 8 includes the high-frequency module 1 according to the present embodiment (or the high-frequency module 1A according to the example) and the external substrate 90 shown in FIG. 1A.
The high-frequency module 1A includes a PA 11, an LNA 21, transmission filters 12A and 12B, reception filters 22A and 22B, a transmission / reception filter 32C, and switches 61, 62, 63, and 64.
The transmission filter 12A is, for example, a filter element having a transmission band of a band (frequency band) A as a pass band. The transmission filter 12B is, for example, a filter element having a transmission band of a band (frequency band) B as a pass band. The reception filter 22A is, for example, a filter element having a reception band of a band (frequency band) A as a pass band. The reception filter 22B is, for example, a filter element having a reception band of band (frequency band) B as a pass band. Note that the transmission filter 12A and the reception filter 22A may constitute a duplexer for band A. Further, the transmission filter 12B and the reception filter 22B may constitute a band B duplexer. The transmission / reception filter 32C is, for example, a filter element having a transmission / reception band of a band (frequency band) C as a pass band.
The switch 61 has a common terminal and three selection terminals. The common terminal is connected to the common input / output terminal 100, and the three selection terminals are respectively a connection terminal for the transmission filter 12A and the reception filter 22A, and a transmission terminal. This is a SP3T (Single Pole 3 Throw) type switch circuit connected to the connection terminal between the trust filter 12B and the reception filter 22B and the transmission / reception filter 32C. The switch 61 has a function of switching signal paths of band A, band B, and band C. The switch 61 may be a switch circuit that conducts the common terminal and at least one of the three selection terminals.
The switch 62 has a common terminal and three selection terminals. The common terminal is connected to the PA 11, and the three selection terminals are an input terminal of the transmission filter 12A, an input terminal of the transmission filter 12B, and a switch, respectively. This is an SP3T type switch circuit connected to one selection terminal of 64. The switch 62 has a function of switching transmission signal paths of band A, band B, and band C. Note that the switch 62 may be a switch circuit that conducts the common terminal and at least one of the three selection terminals.
The switch 63 has a common terminal and three selection terminals. The common terminal is connected to the LNA 21, and the three selection terminals are an output terminal of the reception filter 22A, an output terminal of the reception filter 22B, and a switch, respectively. This is an SP3T type switch circuit connected to the other selection terminal of 64. The switch 63 has a function of switching the reception signal paths of the band A, the band B, and the band C. The switch 63 may be a switch circuit that conducts the common terminal and at least one of the three selection terminals.
The switch 64 is a SPDT (Single Pole Double Throw) type switch circuit having a common terminal and two selection terminals, and the common terminal is connected to the transmission / reception filter 32C. The switch 64 has a function of switching a signal path including the transmission / reception filter 32C to a transmission signal path or a reception signal path.
The LNA 21 is a low noise reception amplifier having a matching circuit 23 and an amplification transistor element 24, and amplifies the high frequency reception signal input from the switch 63 and outputs it to the reception output terminal 120. Note that the LNA 21 may not have the matching circuit 23.
The amplification transistor element 24 is, for example, an amplification element having a bipolar transistor.
The matching circuit 23 is a circuit for matching the output impedances of the reception filters 22A and 22B and the transmission / reception filter 32C with the input impedance of the amplification transistor element 24. For example, the matching circuit 23 includes passive elements such as an inductor and a capacitor. Has been.
PA 11 is a transmission power amplifier having a matching circuit 13 and an amplification transistor element 14, and amplifies a high frequency transmission signal input from the transmission input terminal 110. The PA 11 may not have the matching circuit 13.
The matching circuit 13 is a circuit for matching the output impedance of the amplification transistor element 14 and the input impedances of the transmission filters 12A and 12B and the transmission / reception filter 32C, and is composed of passive elements such as inductors and capacitors, for example. Has been.
Here, the circuit configuration of PA11 will be exemplified and the configuration of PA11 will be described in detail.
FIG. 2B is a circuit configuration diagram of the amplification transistor element 14 included in the high-frequency module 1A according to the embodiment. As shown in the figure, the amplification transistor element 14 includes a transistor 140, capacitors 141 and 142, a bias circuit 143, a collector terminal 144, an emitter terminal 111, an input terminal 145, and an output terminal 146. .
The transistor 140 has, for example, a collector, an emitter, and a base, and is a grounded emitter bipolar transistor. The transistor 140 amplifies a high-frequency current input to the base and outputs the amplified current from the collector. Note that the transistor 140 may be a field-effect transistor having a drain, a source, and a gate.
The capacitor 141 is a capacitor element for DC cut and has a function of preventing a direct current from leaking to the input terminal 145 due to a direct current bias voltage applied to the base from the bias circuit 143.
The capacitor 142 is a capacitive element for DC cut and has a function of removing a direct current component of the high frequency amplified signal on which the direct current bias voltage is superimposed, and the high frequency amplified signal from which the direct current component has been removed is output from the output terminal 146. Is done.
The bias circuit 143 is connected to the base of the transistor 140 and has a function of optimizing the operating point of the transistor 140 by applying a bias voltage to the base.
According to the circuit configuration of the amplification transistor element 14, the high-frequency signal RFin input from the input terminal 145 becomes the base current Ib that flows from the base of the transistor 140 to the emitter. The base current Ib is amplified by the transistor 140 to become the collector current Ic, and the high-frequency signal RFout corresponding to the collector current Ic is output from the output terminal 146. At this time, a large current obtained by adding the base current Ib and the collector current Ic flows from the emitter terminal 111 to the ground.
The emitter terminal 111 may be disposed outside the amplification transistor element 14 and in the PA 11. That is, the emitter terminal 111 may be included in the PA 11 without the amplification transistor element 14.
Returning to FIG. 2A again, the configuration of the communication device 8 will be described.
The RFIC 6 performs signal processing on the high-frequency reception signal input from the antenna element 5 via the high-frequency module 1 </ b> A by down-conversion or the like, and outputs the reception signal generated by the signal processing to the BBIC 7.
The BBIC 7 is a circuit that performs signal processing using an intermediate frequency band that is lower in frequency than the high-frequency signal in the front end. The signal processed by the BBIC 7 is used, for example, as an image signal for displaying an image, or used as an audio signal for a call through a speaker.
With the above configuration, the high-frequency module 1A can selectively transmit each of the high-frequency signal of the band A, the high-frequency signal of the band B, and the high-frequency signal of the band C by the switching operation of the switches 61 to 64. . The high-frequency module 1A is applied to a mode in which each of the transmission / reception signals in the three frequency bands is transmitted independently (non-CA), but two of the transmission / reception signals in the three frequency bands are used. It is also possible to apply to the (CA) mode in which the above transmission / reception signals are transmitted simultaneously.
In the present embodiment, the high frequency module 1A which is a transmission / reception demultiplexing / multiplexing circuit is exemplified as the high frequency module. However, the high frequency module of the present invention may be a transmission multiplexing circuit, and may be a frequency band (signal path) ) Number is not limited.
In addition to the circuit configuration shown in FIG. 2A, electronic components such as capacitors, inductors, and resistance elements may be arranged at nodes that connect the circuit elements.
Here, returning to FIG. 1A, the configuration of the high-frequency module 1 will be described.
The mounting substrate 30 is a double-sided mounting substrate having a main surface 30a and a main surface 30b facing each other, and circuit components are mounted on each of the main surfaces 30a and 30b. The main surface 30 a is a first main surface on the Z-axis positive direction side of the mounting substrate 30, and the main surface 30 b is a second main surface on the Z-axis negative direction side of the mounting substrate 30. The mounting substrate 30 is a multilayer substrate in which a plurality of layers are stacked, and examples thereof include a ceramic multilayer substrate and a PCB substrate. Further, the mounting substrate 30 has a planar wiring pattern set to the ground potential.
PA 11 is a transmission power amplifier that has emitter terminals 111 and 112, is mounted on the main surface 30a, and amplifies a high-frequency transmission signal. The PA 11 includes a base terminal (not shown in FIG. 1A), a collector terminal 144 (not shown in FIG. 1A) and emitter terminals 111 and 112, and an amplification transistor element 14 (not shown in FIG. 1A). The amplification transistor element 14 may have a configuration in which a plurality of transistors 140 are connected in cascade. In this case, the amplification transistor element 14 may have a plurality of base terminals, collector terminals, and emitter terminals. From this point of view, a plurality of emitter terminals 111 and 112 are shown in FIG. 1A.
A base terminal (not shown in FIG. 1A, corresponding to the input terminal 145 in FIG. 2B), a collector terminal 144 (not shown in FIG. 1A, shown in FIG. 2B) and emitter terminals 111 and 112 (shown in FIG. 1A) are: It is arranged on the main surface 30a and is composed of a metal electrode layer or a metal bump member.
As described in FIG. 2B, the amplification transistor element 14 has the base of the transistor 140 connected to the base terminal, the collector of the transistor 140 connected to the collector terminal 144, and the emitter of the transistor 140 connected to the emitter terminal 111 or 112. The collector current Ic flows from the collector terminal 144 toward the emitter terminal 111 or 112.
The LNA 21 is a circuit component that has connection terminals 211 and 212 connected to the mounting board 30 and is mounted on the main surface 30b. For example, the LNA 21 is a low-noise reception amplifier that amplifies a high-frequency reception signal. In the present embodiment, the LNA 21 is exemplified as the circuit component. However, the circuit component may be an active element or a passive element other than the low-noise receiving amplifier.
The transmission filter 12 is a filter element having connection terminals 121 and 122 connected to the mounting substrate 30 and having a transmission band of a predetermined frequency band as a pass band.
The reception filter 22 is a filter element having connection terminals 221 and 222 connected to the mounting substrate 30 and having a reception band of a predetermined frequency band as a pass band. The connection terminal 211 of the LNA 21 and the connection terminal 221 of the reception filter 22 are connected by a through electrode 53.
The ground terminals 411, 412 and 422 are arranged on the main surface 30b side with respect to the mounting substrate 30. The ground terminal 411 is electrically connected to the emitter terminal 111 of the PA 11 through the through electrode 51 and is directly connected to the ground electrode 911 of the external substrate 90. The ground terminal 412 is electrically connected to the emitter terminal 112 of the PA 11 via the through electrode 52 and is directly connected to the ground electrode 912 of the external substrate 90. The ground terminal 422 is electrically connected to the connection terminal 222 of the reception filter 22 via the through electrode 54, and is directly connected to the ground electrode 922 of the external substrate 90. The ground terminals 411, 412 and 422 and the ground electrodes 911, 912 and 922 are joined with a solder member interposed therebetween, for example. Each of the ground terminals 411, 412 and 422 may be a bump member (including a solder ball) bonded to the front end surface of the through electrodes 51, 52 and 54 in the negative Z-axis direction. In addition, each of the ground terminals 411, 412 and 422 may be a plated layer or the like formed on the front end surfaces of the through electrodes 51, 52 and 54 in the negative Z-axis direction. Further, as the high-frequency module 1, when the electrode layer and the electrode terminal are not formed on the front end surface in the Z-axis negative direction of the through electrodes 51, 52 and 54, the ground terminals 411, 412 and 422 are respectively penetrated. It is defined as the front end surfaces of the electrodes 51, 52 and 54 in the negative Z-axis direction. That is, the front end surfaces of the through electrodes 51, 52, and 54 in the negative Z-axis direction are joined to the ground electrodes 911, 912, and 922 via the solder member or the like, respectively.
The through electrode 51 is an electrode that electrically connects the emitter terminal 111 and the ground terminal 411 and penetrates the mounting substrate 30 from the main surface 30a toward the main surface 30b. The through electrode 52 is an electrode that electrically connects the emitter terminal 112 and the ground terminal 412 and penetrates the mounting substrate 30 from the main surface 30a toward the main surface 30b.
The through electrode 53 is an electrode that electrically connects the connection terminal 221 of the reception filter 22 and the connection terminal 211 of the LNA 21 and penetrates the mounting substrate 30 from the main surface 30a toward the main surface 30b. The through electrode 54 is an electrode that electrically connects the connection terminal 222 of the reception filter 22 and the ground terminal 422 and penetrates the mounting substrate 30 from the main surface 30a toward the main surface 30b.
In the present embodiment, the through electrodes 51, 52 and 54 penetrate not only the mounting substrate 30 but also the resin member 40B.
Resin member 40 </ b> A is a first resin that is formed on main surface 30 a and covers the side surfaces and top surface of PA 11, transmission filter 12, and reception filter 22. The resin member 40A only needs to cover at least the side surface of PA11.
Resin member 40B is a second resin that is formed on main surface 30b and covers the side surface and top surface of LNA 21. The resin member 40B only needs to cover at least the side surface of the circuit component.
The through electrodes 53 and 54 and the resin members 40A and 40B are not essential components for the high-frequency module 1 according to the present invention.
An example of a conventional high-frequency module is a high-frequency module using a single-sided mounting board. In this single-sided mounting method, circuit parts are arranged on the same plane, and therefore, in response to the demand for miniaturization and integration from customers, the interval between circuit parts is reduced or the circuit parts themselves are reduced in size. It has responded by. However, with the development of communication technology, not only mainstream LTE (Long Term Evolution) communication but also 5G (5th Generation) mobile communication systems are currently being studied. Therefore, the area where high-frequency components can be mounted on a portable terminal is further narrowed, and there is a limit to downsizing of flat plate products. In the single-sided mounting method, since the PA and LNA are arranged on the same plane, the PA and LNA are directly coupled to each other, making it difficult to ensure isolation between transmission and reception.
On the other hand, according to the above configuration of the high-frequency module 1 according to the present embodiment, since the high-frequency circuit components are mounted on both the main surfaces 30a and 30b of the mounting substrate 30, the high-frequency using the single-side mounting substrate Compared with the module, the density and size can be reduced.
Further, the PA 11 having a large heat generation amount is mounted on the main surface 30a, the through electrode 51 formed on the mounting substrate 30 is connected to the emitter terminal 111 and the ground terminal 411, and the through electrode 52 formed on the mounting substrate 30 is connected to the emitter terminal. 112 and the ground terminal 412. Thereby, the heat dissipation path | route which passed only through the plane wiring pattern in alignment with XY plane direction with large thermal resistance among the wiring in the mounting substrate 30 can be excluded. Therefore, it is possible to provide a small high-frequency module 1 with improved heat dissipation from the PA 11 to the external substrate 90.
That is, in the high-frequency module 1 according to the present embodiment, the PA 11 is arranged on the side opposite to the side on which the ground terminals 411 and 412 are formed with respect to the mounting substrate 30. The ground terminals 411 and 412 are disposed on the main surface 30b side of the main surfaces 30a and 30b with respect to the mounting substrate 30. The heat radiation path of PA 11 is emitter terminal 111 -through electrode 51 -ground terminal 411 and emitter terminal 112 -through electrode 52 -ground terminal 412. If the PA 11 is disposed on the side where the ground terminals 411 and 412 are formed with respect to the mounting substrate 30, the emitter terminals 111 and 112 of the PA 11 are connected to the main surface 30 b and the XY plane of the mounting substrate 30. The ground terminals 411 and 412 are connected by the through electrode in the resin member 40B through the planar wiring pattern extending in the direction. On the other hand, when the PA 11 is arranged on the main surface 30a as in the present embodiment, the heat dissipation path is configured by a path passing through the through electrodes 51 and 52, and only the planar wiring pattern of the mounting substrate 30 is provided. Does not include routes via. That is, since the through electrodes 51 and 52 are directly connected to the ground terminals 411 and 412, a heat dissipation path with a small thermal resistance can be realized, and the heat dissipation of the high-frequency module 1 is improved.
In addition, since the resin member 40A is arranged, the PA 11 having a large amount of heat generation is covered with the resin member 40A, so that heat dissipation from the PA 11 to the external substrate 90 is improved while improving the mounting reliability of the PA 11.
In the present embodiment, the ground terminals 411, 412 and 422 are disposed on the resin member 40B among the resin members 40A and 40B. In particular, in the present embodiment, the ground terminals 411, 412 and 422 are on the surface (in the negative Z-axis direction) of the resin member 40B (the main surface that is not in contact with the main surface 30b among the two main surfaces facing each other). Has been placed.
According to this, since the resin members 40A and 40B are arranged, the through electrodes 51, 52 and 54 are formed in the resin member 40B while improving the mounting reliability of the PA 11 and the LNA 21, so that the mounting substrate 30 and the resin member 40B, it is possible to eliminate a heat dissipation path via only the planar wiring pattern having a large thermal resistance among the wirings formed on the mounting substrate 30 and the resin member 40B.
As shown in FIG. 1C, when the high-frequency module 1 is viewed from the direction perpendicular to the main surfaces 30a and 30b (Z-axis direction), the through electrode 51 and the ground terminal 411 overlap with each other, It is desirable to overlap with the ground terminal 412.
According to this, it is possible to connect the emitter terminal 111 and the ground terminal 411 at approximately the shortest distance, and it is possible to connect the emitter terminal 112 and the ground terminal 412 at approximately the shortest distance. Thereby, since the thermal resistance in the heat dissipation path from PA11 to ground terminals 411 and 412 can be reduced, the heat dissipation from PA11 to external substrate 90 can be further improved. Furthermore, since the formation region of the through electrodes 51 and 52 in the resin member 40B can be limited to the region immediately below the PA 11, the formation region of the circuit component mounted on the main surface 30b can be widened. Therefore, the degree of freedom of arrangement of circuit components is improved.
As shown in FIG. 1C, the through electrode 51 may not completely overlap the ground terminal 411, and at least a part of the through electrode 51 only needs to overlap the ground terminal 411. Further, it is sufficient that at least a part of the through electrode 52 overlaps with the ground terminal 412.
Further, it is desirable that the through electrode 51 and the ground electrode 911 overlap in the plan view, and the through electrode 52 and the ground electrode 912 overlap.
According to this, it is possible to connect the emitter terminal 111 and the ground electrode 911 with a substantially shortest distance, and it is possible to connect the emitter terminal 112 and the ground electrode 912 with a substantially shortest distance. Thereby, since the thermal resistance in the heat dissipation path from PA 11 to external substrate 90 can be reduced, communication device 8 with improved heat dissipation from PA 11 to external substrate 90 can be provided. Note that the through electrode 51 may not completely overlap the ground electrode 911, and it is only necessary that at least a part of the through electrode 51 overlaps the ground electrode 911. Further, it is sufficient that at least a part of the through electrode 52 overlaps with the ground electrode 912.
Further, in the present embodiment, since the PA 11 and the LNA 21 are arranged with the mounting substrate 30 interposed therebetween, it is possible to secure isolation between them and to suppress interference between the transmission signal and the reception signal. In particular, it is possible to suppress a reduction in reception sensitivity due to a transmission signal having high power entering the reception path.
Further, in the present embodiment, when the matching circuit 13 of the PA 11 has a chip-shaped first inductor and the matching circuit 23 of the LNA 21 has a chip-shaped second inductor, the first inductor is mounted on the main surface 30a. The second inductor is preferably mounted on the main surface 30b. According to this configuration, since the first inductor disposed on the transmission system circuit and the second inductor disposed on the reception system circuit are disposed with the mounting substrate 30 interposed therebetween, the first inductor, the second inductor, Can be suppressed. Therefore, isolation between the transmission system circuit and the reception system circuit can be ensured, and interference between the transmission signal and the reception signal can be suppressed. In particular, it is possible to suppress a reduction in reception sensitivity due to a transmission signal having high power entering the reception path.
3A, a chip-shaped third inductor for impedance matching may be disposed between the switch 61 and the transmission filter 12A and the reception filter 22A. A chip-like fourth inductor for impedance matching may be arranged between the transmission filter 12B and the reception filter 22B. Furthermore, a chip-like fifth inductor for impedance matching may be disposed between the common input / output terminal 100 and the switch 61.
In the above configuration, it is desirable that the first inductor is mounted on the main surface 30a and the third inductor is mounted on the main surface 30b. According to this configuration, since the first inductor and the third inductor are arranged with the mounting substrate 30 interposed therebetween, it is possible to suppress the magnetic coupling between the first inductor and the third inductor. Therefore, since it is possible to suppress the transmission signal from entering the reception system circuit without passing through the transmission filter 12A, it is possible to ensure isolation between the transmission system circuit and the reception system circuit, and to prevent interference between the transmission signal and the reception signal. Can be suppressed. In particular, it is possible to suppress a reduction in reception sensitivity due to a transmission signal having high power entering the reception path.
In the above configuration, it is desirable that the first inductor is mounted on the main surface 30a and the fourth inductor is mounted on the main surface 30b. According to this configuration, since the first inductor and the fourth inductor are arranged with the mounting substrate 30 interposed therebetween, it is possible to suppress the magnetic coupling between the first inductor and the fourth inductor. Therefore, since it is possible to suppress the transmission signal from entering the reception system circuit without passing through the transmission filter 12B, it is possible to secure isolation between the transmission system circuit and the reception system circuit, and to interfere with the transmission signal and the reception signal. Can be suppressed. In particular, it is possible to suppress a reduction in reception sensitivity due to a transmission signal having high power entering the reception path.
In the above configuration, it is desirable that the first inductor is mounted on the main surface 30a and the fifth inductor is mounted on the main surface 30b. According to this configuration, since the first inductor and the fifth inductor are arranged with the mounting substrate 30 interposed therebetween, it is possible to suppress the magnetic coupling between the first inductor and the fifth inductor. Therefore, since it is possible to suppress the transmission signal from entering the reception system circuit without passing through the transmission filters 12A and 12B, the isolation between the transmission system circuit and the reception system circuit can be secured, and the transmission signal and the reception signal can be secured. Interference can be suppressed. In particular, it is possible to suppress a reduction in reception sensitivity due to a transmission signal having high power entering the reception path.
In the above configuration, it is desirable that the third inductor is mounted on the main surface 30a and the second inductor is mounted on the main surface 30b. According to this configuration, since the third inductor and the second inductor are disposed with the mounting substrate 30 interposed therebetween, it is possible to suppress the magnetic coupling between the third inductor and the second inductor. Accordingly, since it is possible to suppress the transmission signal from entering the reception system circuit without passing through the reception filter 22A, it is possible to ensure isolation between the transmission system circuit and the reception system circuit, and to interfere with the transmission signal and the reception signal. Can be suppressed. In particular, it is possible to suppress a reduction in reception sensitivity due to a transmission signal having high power entering the reception path.
In the above configuration, it is desirable that the fourth inductor is mounted on the main surface 30a and the second inductor is mounted on the main surface 30b. According to this configuration, since the fourth inductor and the second inductor are arranged with the mounting substrate 30 interposed therebetween, it is possible to suppress the magnetic coupling between the fourth inductor and the second inductor. Therefore, since it is possible to suppress the transmission signal from entering the reception system circuit without passing through the reception filter 22B, it is possible to secure isolation between the transmission system circuit and the reception system circuit and to interfere with the transmission signal and the reception signal. Can be suppressed. In particular, it is possible to suppress a reduction in reception sensitivity due to a transmission signal having high power entering the reception path.
In the above configuration, it is desirable that the fifth inductor is mounted on the main surface 30a and the second inductor is mounted on the main surface 30b. According to this configuration, since the fifth inductor and the second inductor are disposed with the mounting substrate 30 interposed therebetween, it is possible to suppress the magnetic coupling between the fifth inductor and the second inductor. Therefore, since it is possible to suppress the transmission signal from entering the reception system circuit without passing through the reception filters 22A and 22B, the isolation between the transmission system circuit and the reception system circuit can be secured, and the transmission signal and the reception signal can be secured. Interference can be suppressed. In particular, it is possible to suppress a reduction in reception sensitivity due to a transmission signal having high power entering the reception path.
[2. Structure of High Frequency Module 1A According to Example]
FIG. 3A is a first cross-sectional configuration diagram of the high-frequency module 1A according to the first embodiment. FIG. 3B is a second cross-sectional configuration diagram of the high-frequency module 1A according to the first embodiment. FIG. 3C is a third cross-sectional configuration diagram of the high-frequency module 1 </ b> A according to the first embodiment. More specifically, FIG. 3A is a cross-sectional view of the IIIA-IIIA cut surface of FIGS. 3B and 3C as viewed in the positive Y-axis direction. FIG. 3B is a cross-sectional view of the IIIB-IIIB section of FIG. 3A as viewed in the negative Z-axis direction. 3C is a cross-sectional view of the IIIC-IIIC cut surface (main surface 40b) of FIG. 3A viewed in the negative Z-axis direction. 3B and 3C show not only circuit elements and terminals (solid lines) arranged on each cut surface, but also circuit elements (broken lines) existing when viewed in the Z-axis direction.
As shown in FIGS. 3A to 3C, the high-frequency module 1A includes a PA 11, an LNA 21, transmission filters 12A and 12B, reception filters 22A and 22B, transmission / reception filters 32C, and switches 61 to 64. Prepare. The high frequency module 1A according to the present example is a specific configuration example of the high frequency module 1 according to the first embodiment. The high-frequency module 1A according to the present example is different from the high-frequency module 1 according to the embodiment in that filter and switch configurations are added in more detail. Hereinafter, the high-frequency module 1A according to the present example will be described focusing on differences from the high-frequency module 1 according to the embodiment.
PA 11, LNA 21, transmission filters 12A and 12B, reception filters 22A and 22B, transmission / reception filter 32C, and switches 61 to 64 are connected as in the circuit configuration shown in FIG. 2A.
According to the configuration of the high-frequency module 1A according to the first embodiment, as shown in FIG. 3A, since circuit components are mounted on both the main surfaces 30a and 30b of the mounting substrate 30, the high-frequency using a single-side mounting substrate Compared with the module, the density and size can be reduced. Further, PA 11 having a large amount of heat generation is mounted on the main surface 30 a, the through electrode 51 formed on the mounting substrate 30 is connected to the emitter terminal 111 and the ground terminal 411, and the through electrode 52 is connected to the emitter terminal 112 and the ground terminal 412. Has been. Thereby, the heat dissipation path | route which passed only through the plane wiring pattern in alignment with XY plane direction with large thermal resistance among the wiring in the mounting substrate 30 can be excluded. Therefore, it is possible to provide a small high-frequency module 1A with improved heat dissipation from the PA 11 to the external substrate 90.
As shown in FIG. 3C, when the high-frequency module 1A is viewed in a plan view from a direction perpendicular to the main surfaces 30a and 30b (Z-axis direction), the through electrode 51 and the ground terminal 411 overlap with each other, The ground terminal 412 overlaps. Thereby, since the thermal resistance in the heat dissipation path from PA11 to ground terminals 411 and 412 can be reduced, the heat dissipation from PA11 to external substrate 90 can be further improved. Furthermore, since the formation region of the through electrodes 51 and 52 in the resin member 40B can be limited to the region immediately below the PA 11, the formation region of the circuit component mounted on the main surface 30b can be widened. Therefore, the degree of freedom of arrangement of circuit components is improved.
Further, as shown in FIGS. 3A to 3C, when the high-frequency module 1A is viewed in a plan view from a direction perpendicular to the main surfaces 30a and 30b, it is desirable that the PA 11 and the LNA 21 do not overlap.
Thereby, in addition to arranging PA11 and LNA21 separately on main surfaces 30a and 30b, the distance between PA11 and LNA21 can be further increased, and electromagnetic coupling between PA11 and LNA21 can be suppressed. More isolation between the two can be secured. Further, since the through electrodes 51 and 52 that connect the PA 11 and the ground terminals 411 and 412 are not restricted by the arrangement of the LNA 21, the PA 11 and the ground terminals 411 and 412 can be connected in the shortest distance.
Also, in the plan view, as shown in FIGS. 3A and 3B, it is desirable that at least a part of LNA 21 and reception filters 22A and 22B overlap each other.
Thereby, since the line length of the reception path including the LNA 21 and the reception filter 22A or 22B can be shortened, the transmission loss of the reception signal can be reduced. Furthermore, since the parasitic length on the reception path can be suppressed by shortening the line length, it is possible to suppress a decrease in the noise figure of the LNA 21.
Also, in the plan view, as shown in FIGS. 3A and 3B, the transmission filters 12A and 12B are preferably arranged between the PA 11 and the reception filters 22A and 22B.
Thereby, since the line length of the transmission path including the PA 11 and the transmission filters 12A and 12B can be shortened, the transmission loss of the transmission signal can be reduced. Furthermore, since the distance between the PA 11 that outputs a high-power transmission signal and the reception filters 22A and 22B can be ensured by the transmission filters 12A and 12B, it is possible to suppress a decrease in reception sensitivity due to interference of the transmission signals.
[3. Structure of high-frequency module 2 according to modification 1]
FIG. 4A is a first cross-sectional configuration diagram of the high-frequency module 2 according to the first modification. 4B is a second cross-sectional configuration diagram of the high-frequency module 2 according to the first modification. 4C is a third cross-sectional configuration diagram of the high-frequency module 2 according to the first modification. More specifically, FIG. 4A is a cross-sectional view of the IVA-IVA cut surface of FIGS. 4B and 4C as viewed in the positive Y-axis direction. 4B is a cross-sectional view of the IVB-IVB cut surface of FIG. 4A as viewed in the negative Z-axis direction. 4C is a cross-sectional view of the IVC-IVC cut surface of FIG. 4A as viewed in the negative Z-axis direction.
As shown in FIG. 4A, the high-frequency module 2 includes a mounting substrate 30, a PA 11, an LNA 21, a transmission filter 12, a reception filter 22, resin members 40A and 40B, through electrodes 51, 52, 53, and 54, ground terminals 411, 412 and 422, a ground electrode layer 30G, and a shield electrode layer 40G. The high-frequency module 2 according to this modification is different from the high-frequency module 1 according to the embodiment in that the ground electrode layer 30G and the shield electrode layer 40G are arranged. Hereinafter, with respect to the high-frequency module 2 according to this modification, the description of the same points as those of the high-frequency module 1 according to the embodiment will be omitted, and different points will be mainly described.
The ground electrode layer 30G is an electrode layer formed by a planar wiring pattern in the mounting substrate 30 and set to a ground potential.
The shield electrode layer 40G is a first shield electrode layer that is formed so as to cover the top and side surfaces of the resin member 40A and is connected to the ground electrode layer 30G and the side surface of the mounting substrate 30.
Thereby, it is possible to suppress the transmission signal of the PA 11 from being directly radiated to the outside from the high-frequency module 2, and it is possible to suppress external noise from entering the circuit components on the main surface 30a. Furthermore, since the heat generated by PA 11 can be dissipated through the shield electrode layer 40G, the heat dissipation is improved.
[4. Structure of high-frequency module 3 according to modification 2]
FIG. 5A is a first cross-sectional configuration diagram of the high-frequency module 3 according to Modification 2. FIG. 5B is a second cross-sectional configuration diagram of the high-frequency module 3 according to Modification 2. FIG. 5C is a third cross-sectional configuration diagram of the high-frequency module 3 according to Modification 2. More specifically, FIG. 5A is a cross-sectional view of the VA-VA cut surface of FIGS. 5B and 5C as viewed in the positive Y-axis direction. 5B is a cross-sectional view of the VB-VB cut surface of FIG. 5A as viewed in the negative Z-axis direction. 5C is a cross-sectional view of the VC-VC cut surface of FIG. 5A as viewed in the negative Z-axis direction.
As shown in FIG. 5A, the high-frequency module 3 includes a mounting substrate 30, a PA 11, an LNA 21, a transmission filter 12, a reception filter 22, resin members 40A and 40B, through electrodes 51, 52, 53, and 54, ground terminals 411, 412 and 422, a ground electrode layer 30G, a shield electrode layer 40G, and a shield columnar electrode 41G. The high-frequency module 3 according to this modification differs from the high-frequency module 2 according to modification 1 in that the shield columnar electrode 41G is arranged. Hereinafter, the description of the high-frequency module 3 according to the present modification is omitted with respect to the same points as the high-frequency module 2 according to the first modification, and different points are mainly described.
The shield column electrode 41G is a second shield electrode layer formed on the side surface of the resin member 40B and connected to the ground electrode layer 30G on the side surface of the mounting substrate 30. As shown in FIG. 5C, the shield columnar electrode 41G is a semi-columnar columnar electrode in which a columnar via electrode penetrating the mounting substrate 30 and the resin member 40B in the Z-axis direction is cut in the Z-axis direction. Plural pieces are arranged on the side surface of 40B.
According to this, since the shield columnar electrode 41G is formed together with the shield electrode layer 40G, the entire high-frequency module 3 is shielded. Therefore, it can further suppress that the transmission signal of PA11 is radiated | emitted directly from the high frequency module 3, and can suppress that an external noise penetrate | invades into the circuit components on the main surfaces 30a and 30b. Furthermore, since the heat generated by the PA 11 can be radiated through the shield column electrode 41G, the heat dissipation is further improved.
The shield columnar electrode 41G may be a layered electrode formed so as to cover the side surface of the resin member 40B like the shield electrode layer 40G.
[5. Structure of high-frequency module 4A according to modification 3]
FIG. 6 is a first cross-sectional configuration diagram of a high-frequency module 4A according to Modification 3. As shown in the figure, the high frequency module 4A includes a mounting substrate 30, a PA 11, an LNA 21, a transmission filter 12, a reception filter 22, resin members 40A and 40B, through electrodes 51A, 52A, 53, and 54 and ground terminals 411A, 412A and 422. The high-frequency module 4A according to this modification is different from the high-frequency module 1 according to the embodiment in the shapes of the through electrodes 51A and 52A. Hereinafter, the high frequency module 4 </ b> A according to the present modification will be described with a focus on different points while omitting the same points as the high frequency module 1 according to the embodiment.
The through electrode 51A is an electrode that electrically connects the emitter terminal 111 and the ground terminal 411A and penetrates the mounting substrate 30 from the main surface 30a toward the main surface 30b. The through electrode 52A is an electrode that electrically connects the emitter terminal 112 and the ground terminal 412A and penetrates the mounting substrate 30 from the main surface 30a toward the main surface 30b.
Here, the through-electrode 51A is not composed of one cylindrical via electrode extending from the main surface 30a to the main surface 30b in the mounting substrate 30, and a plurality of cylindrical via electrodes are connected in series. It has a structure. A planar wiring pattern along each layer is formed between the plurality of cylindrical via electrodes connected in series. However, when the main surface 30b is viewed in plan from the main surface 30a, it is adjacent to the Z-axis direction. The matching cylindrical via electrodes are at least partially overlapped. In other words, the through electrode 51A does not have a path in the XY plane direction via only the plane wiring pattern, but always has a path in the Z-axis direction. The through electrode 52A also has the same structure as the through electrode 51A.
According to this configuration, the through electrode 51A is not limited to overlapping the emitter terminal 111 and the ground terminal 411A in the plan view, and the degree of freedom of arrangement of the ground terminal 411A can be increased. Further, the through electrode 52A is not limited to overlapping the emitter terminal 112 and the ground terminal 412A in the plan view, and the degree of freedom in arranging the ground terminal 412A can be increased. In addition, the size (diameter) of the plurality of cylindrical via electrodes can be changed, and a plurality of cylindrical via electrodes can be provided in the same layer, thereby further reducing the thermal resistance of the heat dissipation path. It becomes possible.
[6. Structure of high-frequency module 4B according to modification 4]
FIG. 7 is a first cross-sectional configuration diagram of a high-frequency module 4B according to Modification 4. As shown in the figure, the high frequency module 4B includes a mounting substrate 30, a PA 11, an LNA 21, a transmission filter 12, a reception filter 22, resin members 40A and 40B, through electrodes 51B, 52B, 53, and 54 and ground terminals 411B, 412B and 422. The high-frequency module 4B according to this modification is different from the high-frequency module 1 according to the embodiment in the shapes of the through electrodes 51B and 52B. Hereinafter, with respect to the high-frequency module 4B according to the present modification, the description of the same points as the high-frequency module 1 according to the embodiment will be omitted, and different points will be mainly described.
The through electrode 51B is an electrode that electrically connects the emitter terminal 111 and the ground terminal 411B and penetrates the mounting substrate 30 from the main surface 30a toward the main surface 30b. The through electrode 52B is an electrode that electrically connects the emitter terminal 112 and the ground terminal 412B and penetrates the mounting substrate 30 from the main surface 30a toward the main surface 30b.
Here, the through electrode 51B is not constituted by one cylindrical via electrode extending from the main surface 30a to the main surface 30b in the mounting substrate 30, and a plurality of cylindrical via electrodes are connected in series. It has a structure. The through electrode 51B has a structure in which a plurality of cylindrical via electrodes are connected in series in the resin member 40B. A planar wiring pattern along each layer is formed between the plurality of cylindrical via electrodes in the mounting substrate 30.
When the main surface 30a to the main surface 30b are viewed in plan, at least a part of the cylindrical via electrodes adjacent to each other in the Z-axis direction overlap in both the mounting substrate 30 and the resin member 40B. That is, the through electrode 51B does not have a path in the XY plane direction that passes only through the plane wiring pattern, but always has a path in the Z-axis direction. The through electrode 52B has the same structure as the through electrode 51B.
According to the above configuration, the through electrode 51B is not limited to overlapping the emitter terminal 111 and the ground terminal 411B in the plan view, and the degree of freedom of arrangement of the ground terminal 411B can be increased. Further, the through electrode 52B is not limited to overlapping the emitter terminal 112 and the ground terminal 412B in the plan view, and the degree of freedom in arranging the ground terminal 412B can be increased. In addition, the size (diameter) of the plurality of cylindrical via electrodes can be changed, and a plurality of cylindrical via electrodes can be provided in the same layer, thereby further reducing the thermal resistance of the heat dissipation path. It becomes possible.
(Other embodiments, etc.)
As described above, the high-frequency module and the communication device according to the embodiment of the present invention have been described with reference to the embodiment. However, the high-frequency module and the communication device according to the present invention are not limited to the above-described embodiment. Another embodiment realized by combining arbitrary constituent elements in the above-described embodiment, and modifications obtained by applying various modifications conceivable by those skilled in the art to the above-described embodiment without departing from the gist of the present invention. Examples and various devices incorporating the high-frequency module and the communication device are also included in the present invention.
For example, in the high-frequency module and the communication device according to the above-described embodiment, other circuit elements and wirings may be inserted between the circuit elements and signal paths disclosed in the drawings.
INDUSTRIAL-APPLICABILITY
The present invention can be widely used in communication equipment such as a mobile phone as a high-frequency module disposed in a multiband-compatible front end unit.
REFERENCE-SIGNS-LIST
1, 1A, 2, 3, 4A, 4B High-frequency module 5 Antenna element 6 RF signal processing circuit (RFIC)
7 Baseband signal processing circuit (BBIC)
8 Communication equipment 11 PA (Transmission power amplifier)
12, 12A, 12B Transmitting filter 13, 23 Matching circuit 14, 24 Amplifying transistor element 21 LNA (low noise receiving amplifier)
22, 22A, 22B Reception filter 30 Mounting board 30a, 30b, 40b Main surface 30G Ground electrode layer 32C Transmission / reception filter 40A, 40B Resin member 40G Shield electrode layer 41G Shield columnar electrode 51, 51A, 51B, 52, 52A, 52B , 53, 54 Through electrode 61, 62, 63, 64 Switch 90 External substrate 100 Common input / output terminal 110 Transmission input terminal 111, 112 Emitter terminal 120 Reception output terminal 121, 122, 211, 212, 221, 222 Connection terminal 140 Transistor 141, 142 Capacitor 143 Bias circuit 144 Collector terminal 145 Input terminal 146 Output terminal 411, 411A, 411B, 412, 412A, 412B, 422 Ground terminal 911, 912, 922 Ground electrode
DRAWING DESCRIPTION
FIG. 1A is a first cross-sectional configuration diagram of a high-frequency module according to an embodiment. FIG. 1B is a second cross-sectional configuration diagram of the high-frequency module according to the embodiment. FIG. 1C is a third cross-sectional configuration diagram of the high-frequency module according to the embodiment. FIG. 2A is a block configuration diagram of the high-frequency module and the communication device according to the embodiment. FIG. 2B is a circuit configuration diagram of an amplifying element included in the high-frequency module according to the embodiment. FIG. 3A is a first cross-sectional configuration diagram of the high-frequency module according to the embodiment. FIG. 3B is a second cross-sectional configuration diagram of the high-frequency module according to the embodiment. FIG. 3C is a third cross-sectional configuration diagram of the high-frequency module according to the embodiment. 4A is a first cross-sectional configuration diagram of a high-frequency module according to Modification 1. FIG. FIG. 4B is a second cross-sectional configuration diagram of the high-frequency module according to Modification 1. FIG. 4C is a third cross-sectional configuration diagram of the high-frequency module according to Modification 1. FIG. 5A is a first cross-sectional configuration diagram of a high-frequency module according to Modification 2. FIG. 5B is a second cross-sectional configuration diagram of the high-frequency module according to Modification 2. FIG. 5C is a third cross-sectional configuration diagram of the high-frequency module according to Modification 2. [6]FIG. 6 is a first cross-sectional configuration diagram of a high-frequency module according to Modification 3. [7]FIG. 7 is a first cross-sectional configuration diagram of a high-frequency module according to Modification 4.
Claims
A mounting substrate having a first main surface and a second main surface facing each other, and capable of mounting a high-frequency component on the first main surface and the second main surface;
A transmission power amplifier mounted on the first main surface and having a high frequency component and an emitter terminal;
A through electrode connected to an emitter terminal of the transmission power amplifier and penetrating between the first main surface and the second main surface of the mounting substrate;
A ground terminal connected to the through electrode,
High frequency module.
The high frequency module is connected to an external substrate,
The ground terminal is connected to the external substrate;
The high frequency module according to claim 1.
The high-frequency module further includes a first resin formed on the first main surface and covering at least a part of the transmission power amplifier.
The high frequency module according to claim 1 or 2.
The high frequency module further includes:
Circuit components mounted on the second main surface;
A second resin formed on the second main surface and covering at least a part of the circuit component;
The ground terminal is disposed on the second resin.
The high frequency module according to claim 3.
further,
A ground electrode layer formed by a planar wiring pattern of the mounting substrate;
A first shield electrode layer formed to cover the top and side surfaces of the first resin and connected to the ground electrode layer on the side surface of the mounting substrate;
The high frequency module according to claim 4.
further,
A second shield electrode layer formed on a side surface of the second resin and connected to the ground electrode layer on a side surface of the mounting substrate,
The high frequency module according to claim 5.
When the high-frequency module is viewed in a plan view from a direction perpendicular to the first main surface and the second main surface, at least a part of the through electrode and the ground terminal overlap each other.
The high-frequency module according to any one of claims 1 to 6.
The circuit component is a low noise receiving amplifier;
The high-frequency module according to any one of claims 4 to 6.
When the high-frequency module is viewed in plan from a direction perpendicular to the first main surface and the second main surface, the transmission power amplifier and the low-noise reception amplifier do not overlap.
The high frequency module according to claim 8.
further,
A transmission filter mounted on the first main surface;
A receiving filter mounted on the first main surface,
When the high-frequency module is viewed in a plan view from a direction perpendicular to the first main surface and the second main surface, at least a part of the low-noise reception amplifier and the reception filter overlap.
The high frequency module according to claim 8 or 9.
further,
A transmission filter mounted on the first main surface;
A receiving filter mounted on the first main surface,
When the high-frequency module is viewed in plan from a direction perpendicular to the first main surface, the transmission filter is disposed between the transmission power amplifier and the reception filter.
The high-frequency module according to any one of claims 1 to 9.
When the high-frequency module is seen in a plan view from a direction perpendicular to the first main surface and the second main surface, at least a part of the low-noise receiving amplifier and the reception filter mounted on the second main surface is overlapping,
The high-frequency module according to claim 11.
An external board;
A high-frequency module according to any one of claims 1 to 12,
The external substrate has an external ground electrode electrically connected to the ground terminal.
Communication device.
When the communication device is viewed in a plan view from a direction perpendicular to the first main surface and the second main surface, the external ground electrode and the through electrode are at least partially overlapped.
The communication apparatus according to claim 13.
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