DETAILED ACTION
Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Election/Restrictions
Applicant’s election of Species I (FIG. 3) and Species IA (FIG. 5), encompassing claims 1-6, in the reply filed on 1/5/2026 is acknowledged. Because applicant did not distinctly and specifically point out the supposed errors in the restriction requirement, the election has been treated as an election without traverse (MPEP § 818.01(a)).
Claims 7-18 are withdrawn from further consideration pursuant to 37 CFR 1.142(b) as being drawn to a nonelected species, there being no allowable generic or linking claim. Election was made without traverse in the reply filed on 1/5/2026.
Claim Rejections - 35 USC § 102
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –
(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale or otherwise available to the public before the effective filing date of the claimed invention.
(a)(2) the claimed invention was described in a patent issued under section 151, or in an application for patent published or deemed published under section 122(b), in which the patent or application, as the case may be, names another inventor and was effectively filed before the effective filing date of the claimed invention.
Claims 1-6 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Kageyama US 2022/0102587 A1.
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In re claim 1, Kageyama discloses (e.g. FIG. 1 & 7) a light-emitting device 30 (FIG. 7B) comprising:
a light-emitting element 10,44 (¶ 84, FIG. 1) comprising:
a semiconductor structure body 23 (¶ 45) comprising an n-side layer 21, a p-side layer 22, and an active layer 24 positioned between the n-side layer 21 and the p-side layer 22, the n-side layer 21 including an n-side exposed surface 21a exposed from the active layer 24 and the p-side layer 22 in a plan view, the semiconductor structure body 23 including a side surface (side surface of holes above 21a) connecting the n-side exposed surface 21a and an upper surface of the p-side layer 22,
an insulating film 14 covering at least the side surface of the semiconductor structure body 23, the insulating film 14 including:
a first opening 14a in which the n-side exposed surface 21a is exposed, and
a second opening 14b positioned above the upper surface of the p-side layer 22,
an n-side electrode 11 comprising:
a first part (part of 11 above 22 outside the holes) positioned above the upper surface of the p-side layer 22 with the insulating film 14 interposed therebetween,
a second part (part of 11 in holes above 21a) electrically connected with the n-side exposed surface 21a in the first opening and electrically connected with the first part (part of 11 above 22 outside the holes) located at the insulating film 14 covering the side surface of the semiconductor structure body 23, and
a third opening (opening defined by electrode 11 surrounding 12, see FIG. 1D) in which the insulating film 14 covering the side surface of the semiconductor structure body 23 is exposed (see FIG. 1B, a portion of the insulating film 14 along a right side surface of the hole above 21a is exposed by the opening of electrode 11), and
a p-side electrode 12 electrically connected with the p-side layer 22 in the second opening 14b; and
a light-reflective member 34 (¶ 91, covering all of the light-emitting element) contacting the insulating film 14 in the third opening (opening in electrode 11).
In re claim 2, Kageyama discloses (e.g. FIG. 1B) further comprising: a light-reflective electrode 28 (¶ 63) located between the p-side electrode 12 and the upper surface of the p-side layer 22 and electrically connected with the p-side layer 22 and the p-side electrode 12.
In re claim 3, Kageyama discloses (e.g. FIG. 1B, 1E & 1F) wherein: the light-reflective electrode 28 includes a fourth opening 28a in which the n-side exposed surface 21a is exposed, and
a portion of an outer edge of the third opening (opening in electrode 11 surrounding 12, see FIG. 1A) is positioned further outward than an outer edge of the fourth opening 28a in a plan view (top/bottom edge of electrode 11 opening is further outward than any of the openings 28a as shown in FIG. 1A).
In re claims 4-6, Kageyama discloses (e.g. FIGs. 1 & 5A-5D) wherein: the second part (part of electrode 11,511 in holes above 21a,521a) is positioned between the third opening (left side opening in electrode 511 surrounding left side electrode 512 shown in FIGs. 5A & 5C) and the p-side electrode (right side electrode 512 in FIGs. 5A & 5C) in a plan view.
Conclusion
Any inquiry concerning this communication or earlier communications from the examiner should be directed to YU CHEN whose telephone number is (571)270-7881. The examiner can normally be reached Monday-Friday: 9AM-5PM ET.
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/YU CHEN/Primary Examiner, Art Unit 2896
YU CHEN
Examiner
Art Unit 2896