Prosecution Insights
Last updated: April 19, 2026
Application No. 18/468,533

INTEGRATED DEVICES COUPLED TO INTERPOSER COMPRISING POROUS PORTION

Non-Final OA §102
Filed
Sep 15, 2023
Examiner
PAGE, STEVEN MITCHELL CHR
Art Unit
2812
Tech Center
2800 — Semiconductors & Electrical Systems
Assignee
Qualcomm Incorporated
OA Round
1 (Non-Final)
83%
Grant Probability
Favorable
1-2
OA Rounds
2y 4m
To Grant
92%
With Interview

Examiner Intelligence

Grants 83% — above average
83%
Career Allow Rate
359 granted / 433 resolved
+14.9% vs TC avg
Moderate +9% lift
Without
With
+8.6%
Interview Lift
resolved cases with interview
Typical timeline
2y 4m
Avg Prosecution
33 currently pending
Career history
466
Total Applications
across all art units

Statute-Specific Performance

§101
3.4%
-36.6% vs TC avg
§103
38.4%
-1.6% vs TC avg
§102
36.1%
-3.9% vs TC avg
§112
21.5%
-18.5% vs TC avg
Black line = Tech Center average estimate • Based on career data from 433 resolved cases

Office Action

§102
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Claim Rejections - 35 USC § 102 The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action: A person shall be entitled to a patent unless – (a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention. Claim(s) 1, 3, 7-8, 10, and 18-20 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Binder et al. (US 20070210417 A1, hereinafter Binder) With regards to claim 1, Binder discloses a package comprising: an interposer comprising: a silicon substrate (substrate 12) comprising a porous portion; (porous silicon, see at least paragraph [0026]) and a plurality of via interconnects (at least through holes 54) extending through the porous portion of the silicon substrate; and a first integrated device (electronic chip 60) coupled to the interposer through a first plurality of solder interconnects. (solder contacts 58) With regards to claim 3, Binder discloses the package of claim 1. It should be noted that, while Binder does not explicitly teach wherein the porous portion includes a coefficient of thermal expansion (CTE) in a range of about 5-8 parts per million per Celsius degree (ppm / C), porous silicon would inherently have a CTE in that range (See C. Faivre et al. “X-ray diffraction investigation of the low temperature thermal expansion of porous silicon,” Table 1, cited in IDS filed 12/02/2024) With regards to claim 7, Binder discloses the package of claim 1. It should be noted that, while Binder does not explicitly teach wherein the porous portion comprises a porosity in a range of about 30–70 percent, porous silicon would inherently have a porosity in that range (See C. Faivre et al. “X-ray diffraction investigation of the low temperature thermal expansion of porous silicon,” Table 1, cited in IDS filed 12/02/2024) With regards to claim 8, Binder discloses the package of claim 1, further comprising a second integrated device coupled to the interposer through a second plurality of solder interconnects. (Paragraph [0052]: “FIG. 1 shows a rear-side contact 56 which is configured, in particular, as a standard flip-chip interconnect…” Thus the solder contacts 56 connect to a different integrated circuit (not shown)) With regards to claim 10, Binder discloses the package of claim 1, wherein the porous portion includes the entire silicon substrate. (See Paragraph [0026], where the entire substrate is made from porous silicon) With regards to claim 18, Binder discloses the package of claim 1, further comprising a second integrated device coupled to the interposer through a second plurality of solder interconnects. (Paragraph [0052]: “FIG. 1 shows a rear-side contact 56 which is configured, in particular, as a standard flip-chip interconnect…” Thus the solder contacts 56 connect to a different integrated circuit (not shown)) With regards to claim 19, Binder discloses the package of claim 1, further comprising a substrate coupled to the interposer through a second plurality of solder interconnects. (Paragraph [0052]: “FIG. 1 shows a rear-side contact 56 which is configured, in particular, as a standard flip-chip interconnect…” Thus the solder contacts 56 connect to a different integrated circuit (not shown) having a substrate) With regards to claim 20, Binder discloses the package of claim 1, wherein the package is part of a device selected from a group consisting of a music player, a video player, an entertainment unit, a navigation device, a communications device, a mobile device, a mobile phone, (Mobile telephone, see paragraph [0002]) a smartphone, a personal digital assistant, a fixed location terminal, a tablet computer, a computer, a wearable device, a laptop computer, a server, an internet of things (IoT) device, and a device in an automotive vehicle. Allowable Subject Matter Claims 2, 4-6, 9, and 11-17 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. LAI et al (US 20230137691 A1) – porous organosilicate as a substrate in an integrated circuit device. Any inquiry concerning this communication or earlier communications from the examiner should be directed to STEVEN M Page whose telephone number is (571)272-3249. The examiner can normally be reached M-F: 10:00AM-6:00PM. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http://www.uspto.gov/interviewpractice. If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Christine S. Kim can be reached at 571-272-8548. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Information regarding the status of published or unpublished applications may be obtained from Patent Center. Unpublished application information in Patent Center is available to registered users. To file and manage patent submissions in Patent Center, visit: https://patentcenter.uspto.gov. Visit https://www.uspto.gov/patents/apply/patent-center for more information about Patent Center and https://www.uspto.gov/patents/docx for information about filing in DOCX format. For additional questions, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000. /STEVEN M PAGE/Primary Patent Examiner, Art Unit 2812
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Prosecution Timeline

Sep 15, 2023
Application Filed
Dec 03, 2025
Non-Final Rejection — §102 (current)

Precedent Cases

Applications granted by this same examiner with similar technology

Patent 12604513
SEMICONDUCTOR DEVICE
2y 5m to grant Granted Apr 14, 2026
Patent 12581643
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
2y 5m to grant Granted Mar 17, 2026
Patent 12575089
MEMORY DEVICE WITH TAPERED BIT LINE CONTACT
2y 5m to grant Granted Mar 10, 2026
Patent 12568611
MEMORY DEVICE WITH CELL PADS HAVING DIAGONAL SIDEWALLS
2y 5m to grant Granted Mar 03, 2026
Patent 12568845
CHIP SCALE SEMICONDUCTOR PACKAGE HAVING BACK SIDE METAL LAYER AND RAISED FRONT SIDE PAD AND METHOD OF MAKING THE SAME
2y 5m to grant Granted Mar 03, 2026
Study what changed to get past this examiner. Based on 5 most recent grants.

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Prosecution Projections

1-2
Expected OA Rounds
83%
Grant Probability
92%
With Interview (+8.6%)
2y 4m
Median Time to Grant
Low
PTA Risk
Based on 433 resolved cases by this examiner. Grant probability derived from career allow rate.

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